JP5506258B2 - 整流素子 - Google Patents
整流素子 Download PDFInfo
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- JP5506258B2 JP5506258B2 JP2009154447A JP2009154447A JP5506258B2 JP 5506258 B2 JP5506258 B2 JP 5506258B2 JP 2009154447 A JP2009154447 A JP 2009154447A JP 2009154447 A JP2009154447 A JP 2009154447A JP 5506258 B2 JP5506258 B2 JP 5506258B2
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- 230000004888 barrier function Effects 0.000 claims description 193
- 238000001514 detection method Methods 0.000 claims description 135
- 239000004065 semiconductor Substances 0.000 claims description 104
- 239000000969 carrier Substances 0.000 claims description 47
- 230000005684 electric field Effects 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 21
- 238000009826 distribution Methods 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 230000001939 inductive effect Effects 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 35
- 238000000034 method Methods 0.000 description 19
- 230000001965 increasing effect Effects 0.000 description 18
- 230000000694 effects Effects 0.000 description 16
- 230000035945 sensitivity Effects 0.000 description 14
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- 238000013461 design Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
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- 230000007480 spreading Effects 0.000 description 6
- 238000003892 spreading Methods 0.000 description 6
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 5
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
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- 238000012545 processing Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910000673 Indium arsenide Inorganic materials 0.000 description 2
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
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- 230000006872 improvement Effects 0.000 description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 240000004050 Pentaglottis sempervirens Species 0.000 description 1
- 235000004522 Pentaglottis sempervirens Nutrition 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical group [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 235000009508 confectionery Nutrition 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- 150000002738 metalloids Chemical class 0.000 description 1
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- 238000001451 molecular beam epitaxy Methods 0.000 description 1
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Description
一つ目は、こうしたサブミクロン及びナノ構造の作製において、高い精度の微細加工技術が必要となる点である。つまり、特性の安定化、歩留まりの向上、コストの低減といった課題が発生するため、単純に微細加工のみに依存する方法は好ましくない。
二つ目は、構造の微細化に伴い、直列抵抗が増加してしまう点である。こうしたサブミクロン及びナノ構造における直列抵抗の原因の一つとして、広がり抵抗(spreading resistance)と呼ばれる抵抗成分が知られている。ショットキーバリアダイオード構造において、ショットキー電極の直径が小さくなると広がり抵抗は大きくなる傾向にある(Dickens, IEEE Trans. Microwave Theory and Techniques, Vol. MTT-15, 101 (1967) を参照)。従って、上述の様なショットキー電極の面積とカットオフ周波数の関係は甘い見積もりとなる。実際には、微細化に伴い直列抵抗が増加するためカットオフ周波数が低下して、更に微細化が求められ、構造の微細化によるカットオフ周波数向上には上限がある。
(実施形態1)
実施形態1による検出素子について、図1を参照して説明する。図1は、本実施形態による素子を示すもので、図1(a)は構造の断面図、図1(b)は構造におけるバンドプロファイルの一部を表している。本実施形態による素子は、ショットキー電極111を含むショットキー障壁部101と、整流性を有する整流性障壁部102とが接続されている。図1(b)のショットキー障壁110は、例えば、実質的に真性又は真性な半導体112と金属111とを接続すると生じるエネルギー障壁である。整流性を有する障壁120は、例えば、順に半導体121〜125を備える多層膜構造によって生じるエネルギー障壁である。半導体121は、同じ多数キャリアを与える様な導電型の半導体である。半導体122は、実質的に真性又は真性な半導体である。半導体123は、半導体121とは反対の導電型の半導体である。半導体124は、半導体122より厚く実質的に真性又は真性な半導体である。半導体125は、半導体121と同じ導電型の半導体である。尚、図1(a)において、11は基板である。
本発明の実施形態2による検出素子を説明する。本実施形態による検出素子の構成については、図2を参照して説明する。図2は、本実施形態による検出素子を示すもので、図2(a)は構造の断面図、図2(b)は構造におけるバンドプロファイルの一部を表している。本実施形態による検出素子では、順方向電圧が掛けられたとき、同じ多数キャリアが連続的に複数の整流性障壁230、220とショットキー障壁210を通過するバンドプロファイルが特徴となっている。故に、ショットキー電極211とオーミック電極204の間に順方向電圧が掛けられたとき、同じ多数キャリアが連続的に個別の整流性障壁部202、203とショットキー障壁部201を通過する様に、障壁部201、202、203が接続される。従って、本実施形態による検出素子の構成も、いわゆる整流素子に位置付けられ、整流を利用した方式の検出素子として利用できることになる。
本発明の実施形態3による検出素子を説明する。本実施形態による検出素子の構成については、図3(a)を参照して説明する。
本発明の実施形態4による検出素子を説明する。本実施形態による検出素子の構成については、図3(b)を参照して説明する。
本発明の実施形態5による検出素子を説明する。本実施形態による検出素子の構成については、図4を参照して説明する。
(実施例1)
図5は、実施例1による検出素子を示すもので、図5(a)は構造の断面図、図5(b)は構造におけるバンドプロファイルの一部の設計を表す図、図5(c)は構造における電子濃度分布の設計を表す図である。
responsibility)は(d2I/dV801 2)/(2×dI/dV801)で表される。同じく、整流性障壁部802に短絡負荷を接続した場合の電流検出感度(short-circuit current responsibility)は(d2I/dV802 2)/(2×dI/dV802)で表される。これらをSI801、SI802とおくと、素子全体の電圧検出感度SV(V)は、電圧Vにおける素子全体の微分抵抗dR(V)を利用してSV(V)=dR(V)(SI801(V801)+SI802(V802))と見積もられる。これを、dR(V)(SI801((1-α)V)+SI802(αV))とおく(0<α<1)。
図9は、実施例2による検出素子を示すもので、図9(a)は構造の断面図、図9(b)は構造におけるバンドプロファイルの一部の設計を表す図、図9(c)は構造における電子濃度分布の設計を表す図である。
図11は、実施例3による検出素子を示すもので、図11(a)は構造の断面図、図11(b)は構造におけるバンドプロファイルの一部の設計を表す図、図11(c)は構造における正孔濃度分布の設計を表す図である。本実施例による検出素子は、Pd/Auショットキー電極1611を含むショットキー障壁部1601と、正孔に対して整流性を有するSi系の半導体ヘテロ接合による整流性障壁部1602とが接続されている。本実施例において、整流性障壁部1602は、Siと歪みSiGe薄膜を用いたSi/SiGeを選択している。勿論、これに限られず、歪みSiと緩和SiGeを用いたSi/SiGeでもよい。こうしたショットキー障壁部1601と整流性障壁部1602の基板材料としては、Si基板161を用いて、SiGeの組成としてはSi0.90Ge0.10として、δEvは約0.07eVとなるように設計した。こうした半導体の各層の厚さ等は表3の通りである。
Claims (11)
- ショットキー電極を含むショットキー障壁部と、前記ショットキー障壁部における多数キャリアに対して整流性を有する少なくとも1つの障壁部と、前記整流性を有する障壁部に電気的に接したオーミック電極と、を備え、
被検出電磁波の電界成分が前記ショットキー電極と前記オーミック電極の間に誘起されたとき、同じ多数キャリアが前記整流性を有する障壁部と前記ショットキー障壁部とを通過するように、前記ショットキー障壁部と前記整流性を有する障壁部が接続されていることを特徴とした検出素子。 - 複数の前記整流性を有する障壁部を備え、
被検出電磁波の電界成分が前記ショットキー電極と前記オーミック電極の間に誘起されたとき、同じ多数キャリアが複数の前記整流性を有する障壁部と前記ショットキー障壁部とを通過するように、複数の前記整流性を有する障壁部が接続されていることを特徴とした請求項1に記載の検出素子。 - 前記ショットキー障壁部は、前記ショットキー電極をなす金属及び半金属の一方と前記多数キャリアがなくなる様な実質的に真性な半導体及び真性な半導体の一方とを含んで構成されること特徴とした請求項1又は2に記載の検出素子。
- 前記整流性を有する障壁部は、順に、前記多数キャリアを与える様な導電型の半導体、前記多数キャリアがなくなる様な実質的に真性な半導体及び真性な半導体の一方、前記導電型の半導体とは反対の導電型の半導体、前記実質的に真性又は真性な半導体よりも厚く前記多数キャリアがなくなる様な実質的に真性な半導体及び真性な半導体の一方、前記多数キャリアを与える様な導電型の半導体を備えた多層膜構造によって構成されること特徴とした請求項1から3のいずれか1項に記載の検出素子。
- 前記整流性を有する障壁部は、順に、前記多数キャリアを与える様な導電型の半導体、半金属、前記多数キャリアがなくなる様な実質的に真性な半導体及び真性な半導体の一方、前記多数キャリアを与える様な導電型の半導体を備えた多層膜構造によって構成されること特徴とした請求項1から3のいずれか1項に記載の検出素子。
- 前記整流性を有する障壁部は、順に、前記多数キャリアを与える様な導電型の半導体、前記導電型の半導体よりバンドギャップが大きく且つ前記多数キャリアがなくなる様な実質的に真性又は真性な半導体、前記多数キャリアを与える様な導電型の半導体を備えた多層膜構造によって構成されること特徴とした請求項1から3のいずれか1項に記載の検出素子。
- 前記多数キャリアは電子であることを特徴とした請求項1から6のいずれか1項に記載の検出素子。
- 検出信号を出力するためのトランジスタを備え、
前記検出素子と前記トランジスタが同一基板に配置されることを特徴とした請求項1から7のいずれか1項に記載の検出素子。 - 被検出電磁波の電界成分を前記ショットキー電極と前記オーミック電極の間に誘起するためのアンテナを備え、
前記ショットキー電極と前記オーミック電極を前記アンテナの出力ポートとすることを特徴とした請求項1から8のいずれか1項に記載の検出素子。 - 複数の請求項1から9のいずれか1項に記載の検出素子をアレイ状に配し、
前記複数の検出素子がそれぞれ検出する被検出電磁波の電界に基づいて電界分布の画像を形成することを特徴とする画像形成装置。 - ショットキー電極を含むショットキー障壁部と、前記ショットキー障壁部における多数キャリアに対して整流性を有する障壁部と、前記整流性を有する障壁部に電気的に接したオーミック電極と、を備え、
前記ショットキー障壁部と前記整流性を有する障壁部のそれぞれは、一方側が他方側よりも大きい勾配の非対称なバンドプロファイルを有するように構成され、且つ、
前記ショットキー障壁部と前記整流性を有する障壁部は、前記バンドプロファイルの大きい勾配の方の側が前記ショットキー電極の側に位置するように、前記多数キャリアを与える導電型の半導体を介して、接続されていることを特徴とする整流素子。
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