JP6087520B2 - ダイオード素子及び検出素子 - Google Patents
ダイオード素子及び検出素子 Download PDFInfo
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- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
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- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
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- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
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Description
実施形態2に係るダイオード素子について、図3を用いて説明する。本実施形態は、実施形態1の変形例である。本実施形態が実施形態1と異なるのは、次の点である。オーミック電極305が、不純物導入領域306、307を覆っている点と、ショットキー電極304が、不純物導入領域307と僅かにオーバーラップしている点(図3(a))、または、物理的に離間されている点(図3(b))である。その他は、実施形態1と同様で、301は基板、302は高濃度キャリア層(第二の層)、303は低濃度キャリア層(第一の層)である。第二の導電型の不純物導入領域307は、二電極304、305間の半導体表面を覆っていればどんな構造でもよい。本実施形態では、第一の導電型の不純物導入領域306が高濃度キャリア層302を突き抜けていないが、両者が接していればどんな構造でもよい。
実施形態3に係る検出素子について、図4を用いて説明する。本実施形態も実施形態1の変形例である。本実施形態が実施形態1と異なるのは、半絶縁性基板401を用いており、誘電体408によって導電層(高濃度キャリア層と低濃度キャリア層)402、403を島状に分離している点である。つまり、電極404、405と導電層402、403が、401の半導体基板上に島状に配されている。また、ショットキー電極404とオーミック電極405には、それぞれ、導電パターン4041、4051が接続されている。その他は、実施形態1と同様である。すなわち、第一の導電型の不純物導入領域が406、第二の導電型の不純物導入領域が407である。
(実施例1)
実施形態3に対応するより具体的な実施例1を説明する。本実施例に係る検出素子について、図6を用いて説明する。図6に示す本実施例は、電磁波を検出するための用途で使用することができる好適なダイオード素子の実施例である。
実施例2に係る検出素子について、図7を用いて説明する。図7に示す本実施例は、実施例1の変形例である。本実施例は、検出信号をアンプするための用途で使用することができる好適な検出素子の実施例を示すもので、同じSi基板601上に集積したMOSFETによって検出信号をアンプすることが可能である。
Claims (12)
- 第一の導電型の第一の層及び前記第一の層の下に形成された第一の導電型の第二の層を含む半導体と、前記半導体の表面上に形成されているショットキー電極及びオーミック電極と、を備えたダイオード素子であって、
前記ショットキー電極は、前記第一の層と接してショットキー障壁を形成しており、
前記第一の層の不純物密度は、前記第二の層の不純物密度より低く、
前記オーミック電極の直下に配置されている第一の導電型の不純物導入領域と、
前記ショットキー電極と前記オーミック電極との間の前記半導体の表面に形成されている、前記第一の導電型とは異なる第二の導電型の領域と、を有し、
前記ショットキー電極と前記第二の導電型の領域とは、10MΩ以上の電気抵抗によって電気的に絶縁され、
前記第二の導電型の領域は、前記不純物導入領域と接している
ことを特徴とするダイオード素子。 - 第一の導電型の第一の層及び前記第一の層の下に形成された第一の導電型の第二の層を含む半導体と、前記半導体の表面上に形成されているショットキー電極及びオーミック電極と、を備えたダイオード素子であって、
前記ショットキー電極は、前記第一の層と接してショットキー障壁を形成しており、
前記第一の層の不純物密度は、前記第二の層の不純物密度より低く、
前記オーミック電極の直下に配置されている第一の導電型の不純物導入領域と、前記ショットキー電極と前記オーミック電極との間の前記半導体の表面に前記ショットキー電極と隔てて形成されている、前記第一の導電型とは異なる第二の導電型の領域と、を有し、
前記第二の導電型の領域は、前記不純物導入領域と接している
ことを特徴とするダイオード素子。 - 第一の導電型の第一の層及び前記第一の層の下に形成された第一の導電型の第二の層を含む半導体と、前記半導体の表面上に形成されているショットキー電極及びオーミック電極と、を備えたダイオード素子であって、
前記ショットキー電極は、前記第一の層と接してショットキー障壁を形成しており、
前記第一の層の不純物密度は、前記第二の層の不純物密度より低く、
前記オーミック電極の直下に配置されている第一の導電型の不純物導入領域と、前記ショットキー電極と前記オーミック電極との間の前記半導体の表面に形成されている、前記第一の導電型とは異なる第二の導電型の領域と、を有し、
前記第二の導電型の領域の一部は、前記ショットキー電極と接しており、前記ショットキー電極と前記第二の導電型の領域との間の接触抵抗値が、前記ショットキー電極と前記第一の層との間の接触抵抗値より大きく、
前記第二の導電型の領域は、前記不純物導入領域と接している
ことを特徴とするダイオード素子。 - 前記不純物導入領域は、前記半導体の表面から前記第二の層と接する深さまで形成されている
ことを特徴とする請求項1乃至3の何れか1項に記載のダイオード素子。 - 前記第二の導電型の領域は、前記半導体の表面から前記第二の層と接する深さまで形成されている
ことを特徴とする請求項1乃至4の何れか1項に記載のダイオード素子。 - 前記第二の導電型の領域は、前記ショットキー電極の周囲に配置されている
ことを特徴とする請求項1乃至5の何れか1項に記載のダイオード素子。 - 前記オーミック電極は、前記第二の導電型の領域及び前記不純物導入領域のそれぞれと接しており、前記不純物導入領域とオーム性接続している
ことを特徴とする請求項1乃至6のいずれか一項に記載のダイオード素子。 - 前記ダイオード素子は、半導体基板上に島状に配されている
ことを特徴とする請求項1乃至7の何れか1項に記載のダイオード素子。 - 前記ショットキー電極と前記第二の導電型の領域とが重なっている領域を有し、前記ショットキー電極と前記第二の導電型の領域とが重なっている前記領域の面積をA、前記ショットキー電極と前記第二の導電型の領域との間の接触抵抗をρcとすると、ρc/Aは10MΩ以上である
ことを特徴とする請求項1又は3に記載のダイオード素子。 - 請求項1乃至9の何れか1項に記載のダイオード素子と、被検出電磁波の電界成分を前記ショットキー電極と前記オーミック電極との間に誘起するためのアンテナと、を備え、
前記ショットキー電極と前記オーミック電極を前記アンテナの出力ポートとする
ことを特徴とする検出素子。 - 請求項1乃至9の何れか1項に記載のダイオード素子と、検出信号を出力するためのトランジスタと、を備え、
前記ダイオード素子と前記トランジスタが同一基板に配置される
ことを特徴とする検出素子。 - 請求項10または11に記載の検出素子を複数個アレイ状に配し、
前記複数の検出素子がそれぞれ検出する被検出電磁波の電界に基づいて電界分布の画像を形成する
ことを特徴とする画像形成装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012122572A JP6087520B2 (ja) | 2011-07-13 | 2012-05-30 | ダイオード素子及び検出素子 |
EP12741393.8A EP2732476A1 (en) | 2011-07-13 | 2012-06-27 | Diode element and detecting device |
PCT/JP2012/067020 WO2013008687A1 (en) | 2011-07-13 | 2012-06-27 | Diode element and detecting device |
US14/125,561 US9349881B2 (en) | 2011-07-13 | 2012-06-27 | Diode element and detecting device |
CN201280033860.4A CN103650167A (zh) | 2011-07-13 | 2012-06-27 | 二极管元件和检测设备 |
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JP2012122572A JP6087520B2 (ja) | 2011-07-13 | 2012-05-30 | ダイオード素子及び検出素子 |
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JP2013038390A5 JP2013038390A5 (ja) | 2015-12-17 |
JP6087520B2 true JP6087520B2 (ja) | 2017-03-01 |
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EP (1) | EP2732476A1 (ja) |
JP (1) | JP6087520B2 (ja) |
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JP5506258B2 (ja) * | 2008-08-06 | 2014-05-28 | キヤノン株式会社 | 整流素子 |
JP6373010B2 (ja) | 2013-03-12 | 2018-08-15 | キヤノン株式会社 | 発振素子 |
JP2015144248A (ja) * | 2013-12-25 | 2015-08-06 | キヤノン株式会社 | 半導体装置、及びその製造方法 |
JP6483628B2 (ja) * | 2016-01-05 | 2019-03-13 | 日本電信電話株式会社 | 半導体光触媒 |
US10018507B2 (en) * | 2016-07-18 | 2018-07-10 | University Of Delaware | Electromagnetic detector |
CN113745815B (zh) * | 2021-08-27 | 2022-05-20 | 西安交通大学 | 一种工作在太赫兹波段的协同联合天线 |
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JPS6018959A (ja) | 1983-07-13 | 1985-01-31 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
DE3578271D1 (de) * | 1984-11-02 | 1990-07-19 | Toshiba Kawasaki Kk | Feldeffekttransistor mit einem schottky-gate und herstellungsverfahren dafuer. |
JPH02262372A (ja) * | 1989-04-03 | 1990-10-25 | Fujitsu Ltd | 半導体装置およびその製造方法 |
TW232079B (ja) * | 1992-03-17 | 1994-10-11 | Wisconsin Alumni Res Found | |
US5432374A (en) * | 1993-02-08 | 1995-07-11 | Santa Barbara Research Center | Integrated IR and mm-wave detector |
JPH07201885A (ja) * | 1993-12-28 | 1995-08-04 | Fujitsu Ltd | 半導体装置の製造方法 |
JP3298601B2 (ja) * | 1994-09-14 | 2002-07-02 | 住友電気工業株式会社 | 電界効果トランジスタおよびその製造方法 |
JPH09162424A (ja) | 1995-12-04 | 1997-06-20 | Yokogawa Electric Corp | アンテナ結合電界検出型光検出素子およびその製造方法 |
JPH10322147A (ja) * | 1996-10-04 | 1998-12-04 | Toshiba Corp | 高周波電力増幅器およびこれを用いた移動体通信装置 |
JPH10256271A (ja) * | 1997-03-11 | 1998-09-25 | Toshiba Corp | 電界効果トランジスタおよび高周波電力増幅器 |
US6107649A (en) * | 1998-06-10 | 2000-08-22 | Rutgers, The State University | Field-controlled high-power semiconductor devices |
US7355260B2 (en) * | 2004-06-30 | 2008-04-08 | Freescale Semiconductor, Inc. | Schottky device and method of forming |
JP4250603B2 (ja) | 2005-03-28 | 2009-04-08 | キヤノン株式会社 | テラヘルツ波の発生素子、及びその製造方法 |
US7282386B2 (en) | 2005-04-29 | 2007-10-16 | Freescale Semiconductor, Inc. | Schottky device and method of forming |
JP4481946B2 (ja) | 2006-03-17 | 2010-06-16 | キヤノン株式会社 | 検出素子及び画像形成装置 |
KR100763915B1 (ko) * | 2006-06-01 | 2007-10-05 | 삼성전자주식회사 | 낮은 항복 전압을 갖는 쇼트키 다이오드 및 그 제조 방법 |
JP5196750B2 (ja) | 2006-08-25 | 2013-05-15 | キヤノン株式会社 | 発振素子 |
US7869036B2 (en) | 2007-08-31 | 2011-01-11 | Canon Kabushiki Kaisha | Analysis apparatus for analyzing a specimen by obtaining electromagnetic spectrum information |
JP5085241B2 (ja) | 2007-09-06 | 2012-11-28 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
US7781859B2 (en) * | 2008-03-24 | 2010-08-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Schottky diode structures having deep wells for improving breakdown voltages |
JP5506258B2 (ja) * | 2008-08-06 | 2014-05-28 | キヤノン株式会社 | 整流素子 |
US7972913B2 (en) | 2009-05-28 | 2011-07-05 | Freescale Semiconductor, Inc. | Method for forming a Schottky diode |
JP4837113B2 (ja) | 2010-03-18 | 2011-12-14 | ファナック株式会社 | ロボットを用いた嵌合装置 |
JP5563356B2 (ja) | 2010-04-12 | 2014-07-30 | キヤノン株式会社 | 電磁波検出素子 |
JP6280310B2 (ja) | 2012-06-06 | 2018-02-14 | キヤノン株式会社 | 発振器 |
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- 2012-06-27 CN CN201280033860.4A patent/CN103650167A/zh active Pending
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US20140124885A1 (en) | 2014-05-08 |
JP2013038390A (ja) | 2013-02-21 |
WO2013008687A1 (en) | 2013-01-17 |
US9349881B2 (en) | 2016-05-24 |
EP2732476A1 (en) | 2014-05-21 |
CN103650167A (zh) | 2014-03-19 |
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