DE69028180D1 - Verfahren und Vorrichtung zum kontinuierlichen Ätzen - Google Patents

Verfahren und Vorrichtung zum kontinuierlichen Ätzen

Info

Publication number
DE69028180D1
DE69028180D1 DE69028180T DE69028180T DE69028180D1 DE 69028180 D1 DE69028180 D1 DE 69028180D1 DE 69028180 T DE69028180 T DE 69028180T DE 69028180 T DE69028180 T DE 69028180T DE 69028180 D1 DE69028180 D1 DE 69028180D1
Authority
DE
Germany
Prior art keywords
etching method
continuous etching
continuous
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69028180T
Other languages
English (en)
Other versions
DE69028180T2 (de
Inventor
Sadayuki Okudaira
Hideo Komatsu
Osamu Matsumoto
Motoichi Kanazawa
Kazuo Sasada
Tsuyoshi Naito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kokusai Electric Corp
Original Assignee
Kokusai Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Electric Corp filed Critical Kokusai Electric Corp
Application granted granted Critical
Publication of DE69028180D1 publication Critical patent/DE69028180D1/de
Publication of DE69028180T2 publication Critical patent/DE69028180T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/907—Continuous processing

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Chemical Vapour Deposition (AREA)
DE69028180T 1989-11-20 1990-11-19 Verfahren und Vorrichtung zum kontinuierlichen Ätzen Expired - Fee Related DE69028180T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1301618A JP2926798B2 (ja) 1989-11-20 1989-11-20 連続処理エッチング方法及びその装置

Publications (2)

Publication Number Publication Date
DE69028180D1 true DE69028180D1 (de) 1996-09-26
DE69028180T2 DE69028180T2 (de) 1997-03-06

Family

ID=17899114

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69028180T Expired - Fee Related DE69028180T2 (de) 1989-11-20 1990-11-19 Verfahren und Vorrichtung zum kontinuierlichen Ätzen

Country Status (5)

Country Link
US (1) US5127987A (de)
EP (1) EP0429270B1 (de)
JP (1) JP2926798B2 (de)
KR (1) KR930011905B1 (de)
DE (1) DE69028180T2 (de)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2674488B2 (ja) * 1993-12-01 1997-11-12 日本電気株式会社 ドライエッチング室のクリーニング方法
JP2655474B2 (ja) * 1993-12-17 1997-09-17 日本電気株式会社 電子線直接描画方法及びその装置
JPH07221075A (ja) * 1994-02-03 1995-08-18 Fujitsu Ltd アッシング処理方法
TW295677B (de) * 1994-08-19 1997-01-11 Tokyo Electron Co Ltd
US5950106A (en) * 1996-05-14 1999-09-07 Advanced Micro Devices, Inc. Method of patterning a metal substrate using spin-on glass as a hard mask
US5882413A (en) * 1997-07-11 1999-03-16 Brooks Automation, Inc. Substrate processing apparatus having a substrate transport with a front end extension and an internal substrate buffer
EP1082755A1 (de) * 1998-05-18 2001-03-14 Applied Materials, Inc. Halbleiterscheiben-bufferstation und verfahren zum einzeltransport von halbleiterplättchen zwischen arbeitsplätzen
TW379447B (en) * 1998-09-22 2000-01-11 United Silicon Inc Method of manufacturing DRAM cylindrical capacitor
US6440261B1 (en) 1999-05-25 2002-08-27 Applied Materials, Inc. Dual buffer chamber cluster tool for semiconductor wafer processing
US6246706B1 (en) 1999-05-27 2001-06-12 Spectra Physics Lasers, Inc. Laser writing method and apparatus
US6620723B1 (en) 2000-06-27 2003-09-16 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US6551929B1 (en) 2000-06-28 2003-04-22 Applied Materials, Inc. Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques
US7732327B2 (en) 2000-06-28 2010-06-08 Applied Materials, Inc. Vapor deposition of tungsten materials
US7964505B2 (en) 2005-01-19 2011-06-21 Applied Materials, Inc. Atomic layer deposition of tungsten materials
US7405158B2 (en) 2000-06-28 2008-07-29 Applied Materials, Inc. Methods for depositing tungsten layers employing atomic layer deposition techniques
US6765178B2 (en) 2000-12-29 2004-07-20 Applied Materials, Inc. Chamber for uniform substrate heating
US6825447B2 (en) 2000-12-29 2004-11-30 Applied Materials, Inc. Apparatus and method for uniform substrate heating and contaminate collection
US6951804B2 (en) 2001-02-02 2005-10-04 Applied Materials, Inc. Formation of a tantalum-nitride layer
US6660126B2 (en) 2001-03-02 2003-12-09 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US6878206B2 (en) 2001-07-16 2005-04-12 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US6734020B2 (en) 2001-03-07 2004-05-11 Applied Materials, Inc. Valve control system for atomic layer deposition chamber
US7211144B2 (en) 2001-07-13 2007-05-01 Applied Materials, Inc. Pulsed nucleation deposition of tungsten layers
US6916398B2 (en) 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
US7780785B2 (en) 2001-10-26 2010-08-24 Applied Materials, Inc. Gas delivery apparatus for atomic layer deposition
WO2003038153A1 (en) * 2001-10-31 2003-05-08 Nagraj Kulkarni Process for low temperature, dry etching, and dry planarization of copper
US6729824B2 (en) 2001-12-14 2004-05-04 Applied Materials, Inc. Dual robot processing system
US6620670B2 (en) 2002-01-18 2003-09-16 Applied Materials, Inc. Process conditions and precursors for atomic layer deposition (ALD) of AL2O3
US6998014B2 (en) 2002-01-26 2006-02-14 Applied Materials, Inc. Apparatus and method for plasma assisted deposition
US6911391B2 (en) 2002-01-26 2005-06-28 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US6827978B2 (en) 2002-02-11 2004-12-07 Applied Materials, Inc. Deposition of tungsten films
US6833161B2 (en) 2002-02-26 2004-12-21 Applied Materials, Inc. Cyclical deposition of tungsten nitride for metal oxide gate electrode
US6720027B2 (en) 2002-04-08 2004-04-13 Applied Materials, Inc. Cyclical deposition of a variable content titanium silicon nitride layer
US7279432B2 (en) 2002-04-16 2007-10-09 Applied Materials, Inc. System and method for forming an integrated barrier layer
CA3116787C (en) 2010-06-16 2023-07-11 Mueller International, Llc Infrastructure monitoring devices, systems, and methods
CN102569011A (zh) * 2010-12-13 2012-07-11 北京北方微电子基地设备工艺研究中心有限责任公司 晶片处理系统和晶片处理方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4390595A (en) * 1979-10-25 1983-06-28 Hughes Aircraft Company Environmentally protected IR windows
JPH0666298B2 (ja) * 1983-02-03 1994-08-24 日電アネルバ株式会社 ドライエッチング装置
JPS59186326A (ja) * 1983-04-06 1984-10-23 Hitachi Ltd プラズマ処理装置
US5013385A (en) * 1986-04-18 1991-05-07 General Signal Corporation Quad processor
JPS6362233A (ja) * 1986-09-03 1988-03-18 Mitsubishi Electric Corp 反応性イオンエツチング装置
JPS63157870A (ja) * 1986-12-19 1988-06-30 Anelva Corp 基板処理装置
DD267515A1 (de) * 1987-10-15 1989-05-03 Ardenne Forschungsinst Einrichtung zur bearbeitung von substraten im vakuum in mehreren prozessstationen
WO1989007285A1 (en) * 1988-01-29 1989-08-10 Massachusetts Institute Of Technology Integrated circuit micro-fabrication using dry lithographic processes
KR920004176B1 (ko) * 1988-03-16 1992-05-30 후지쓰 가부시끼가이샤 레지스트 패턴 형성 공정

Also Published As

Publication number Publication date
KR930011905B1 (ko) 1993-12-22
KR910010640A (ko) 1991-06-29
EP0429270A3 (en) 1991-12-27
DE69028180T2 (de) 1997-03-06
EP0429270B1 (de) 1996-08-21
EP0429270A2 (de) 1991-05-29
US5127987A (en) 1992-07-07
JP2926798B2 (ja) 1999-07-28
JPH03161929A (ja) 1991-07-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: GROSSE, BOCKHORNI, SCHUMACHER, 81476 MUENCHEN

8339 Ceased/non-payment of the annual fee