CN1016191B - 半导体器件的高氧含量硅单晶基片制法 - Google Patents

半导体器件的高氧含量硅单晶基片制法

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Publication number
CN1016191B
CN1016191B CN86106346A CN86106346A CN1016191B CN 1016191 B CN1016191 B CN 1016191B CN 86106346 A CN86106346 A CN 86106346A CN 86106346 A CN86106346 A CN 86106346A CN 1016191 B CN1016191 B CN 1016191B
Authority
CN
China
Prior art keywords
silicon
crystal
crucible
oxygen level
growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CN86106346A
Other languages
English (en)
Chinese (zh)
Other versions
CN86106346A (zh
Inventor
铃木利彦
加藤弥三郎
二神元信
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of CN86106346A publication Critical patent/CN86106346A/zh
Publication of CN1016191B publication Critical patent/CN1016191B/zh
Expired legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C30B15/305—Stirring of the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
CN86106346A 1985-10-31 1986-10-31 半导体器件的高氧含量硅单晶基片制法 Expired CN1016191B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP60244562A JPS62105998A (ja) 1985-10-31 1985-10-31 シリコン基板の製法
JP244562/85 1985-10-31

Publications (2)

Publication Number Publication Date
CN86106346A CN86106346A (zh) 1987-06-17
CN1016191B true CN1016191B (zh) 1992-04-08

Family

ID=17120560

Family Applications (1)

Application Number Title Priority Date Filing Date
CN86106346A Expired CN1016191B (zh) 1985-10-31 1986-10-31 半导体器件的高氧含量硅单晶基片制法

Country Status (14)

Country Link
JP (1) JPS62105998A (de)
KR (1) KR870004498A (de)
CN (1) CN1016191B (de)
AT (1) ATA289086A (de)
AU (1) AU597599B2 (de)
CA (1) CA1336061C (de)
DE (1) DE3637006A1 (de)
DK (1) DK518486A (de)
FR (1) FR2589489B1 (de)
GB (1) GB2182262B (de)
IT (1) IT1198454B (de)
MY (1) MY100449A (de)
NL (1) NL8602738A (de)
SE (1) SE8604627L (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5196085A (en) * 1990-12-28 1993-03-23 Massachusetts Institute Of Technology Active magnetic flow control in Czochralski systems
JP2613498B2 (ja) * 1991-03-15 1997-05-28 信越半導体株式会社 Ｓｉ単結晶ウエーハの熱処理方法
JPH07247197A (ja) * 1994-03-09 1995-09-26 Fujitsu Ltd 半導体装置とその製造方法
JP3443822B2 (ja) * 1996-03-27 2003-09-08 信越半導体株式会社 シリコン単結晶の製造方法
DE19711922A1 (de) * 1997-03-21 1998-09-24 Wacker Siltronic Halbleitermat Vorrichtung und Verfahren zum Ziehen eines Einkristalls
CN100547122C (zh) 1997-04-09 2009-10-07 Memc电子材料有限公司 缺陷密度低，空位占优势的硅
US6379642B1 (en) 1997-04-09 2002-04-30 Memc Electronic Materials, Inc. Vacancy dominated, defect-free silicon
US6190631B1 (en) 1997-04-09 2001-02-20 Memc Electronic Materials, Inc. Low defect density, ideal oxygen precipitating silicon
JPH11268987A (ja) * 1998-03-20 1999-10-05 Shin Etsu Handotai Co Ltd シリコン単結晶およびその製造方法
JP2003517412A (ja) 1998-06-26 2003-05-27 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド 任意に大きい直径を有する無欠陥シリコン結晶の成長方法
JP2002524845A (ja) 1998-09-02 2002-08-06 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド 欠陥密度が低い単結晶シリコンから得られるシリコン・オン・インシュレーター構造体
US6416836B1 (en) 1998-10-14 2002-07-09 Memc Electronic Materials, Inc. Thermally annealed, low defect density single crystal silicon
KR20010034789A (ko) 1998-10-14 2001-04-25 헨넬리 헬렌 에프 실질적으로 성장 결점이 없는 에피택시얼 실리콘 웨이퍼
US6312516B2 (en) 1998-10-14 2001-11-06 Memc Electronic Materials, Inc. Process for preparing defect free silicon crystals which allows for variability in process conditions
US6858307B2 (en) 2000-11-03 2005-02-22 Memc Electronic Materials, Inc. Method for the production of low defect density silicon
US7105050B2 (en) 2000-11-03 2006-09-12 Memc Electronic Materials, Inc. Method for the production of low defect density silicon
WO2002059400A2 (en) 2001-01-26 2002-08-01 Memc Electronic Materials, Inc. Low defect density silicon substantially free of oxidation induced stacking faults having a vacancy-dominated core
DE10103691A1 (de) * 2001-01-26 2002-08-08 Crystal Growing Systems Gmbh Elektrische Energieversorgung für eine elektrische Heizung
TWI404836B (zh) 2006-05-19 2013-08-11 Memc Electronic Materials 控制由單晶矽在卓式成長過程側向表面產生的聚集點缺陷及氧團簇的形成
JP5974978B2 (ja) 2013-05-29 2016-08-23 信越半導体株式会社 シリコン単結晶製造方法
CN105780113B (zh) * 2016-03-10 2017-11-28 江西赛维Ldk太阳能高科技有限公司 一种表征晶体硅生长界面和生长速度的方法
CN112095154B (zh) * 2019-06-18 2021-05-14 上海新昇半导体科技有限公司 一种半导体晶体生长装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5556098A (en) * 1978-10-17 1980-04-24 Chiyou Lsi Gijutsu Kenkyu Kumiai Method and apparatus for producing si single crystal rod
DE3069547D1 (en) * 1980-06-26 1984-12-06 Ibm Process for controlling the oxygen content of silicon ingots pulled by the czochralski method
GB2084046B (en) * 1980-08-27 1984-07-25 Secr Defence Method and apparatus for crystal growth
DE3170781D1 (en) * 1980-12-29 1985-07-04 Monsanto Co Method for regulating concentration and distribution of oxygen in czochralski grown silicon
NL8102102A (nl) * 1981-04-29 1982-11-16 Philips Nv Werkwijze voor het optrekken van een siliciumstaaf en halfgeleiderinrichting vervaardigd uit de siliciumstaaf.
JPH0244799B2 (ja) * 1981-10-26 1990-10-05 Sony Corp Ketsushoseichohoho
US4511428A (en) * 1982-07-09 1985-04-16 International Business Machines Corporation Method of controlling oxygen content and distribution in grown silicon crystals
JPS6027684A (ja) * 1983-07-26 1985-02-12 Fujitsu Ltd 単結晶製造装置
JPS6033289A (ja) * 1983-07-29 1985-02-20 Toshiba Corp シリコン単結晶の製造方法
JPS6094722A (ja) * 1983-08-16 1985-05-27 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション シリコン・ウエハ
JPS6153187A (ja) * 1984-08-24 1986-03-17 Sony Corp 単結晶成長装置
IT1207497B (it) * 1985-05-29 1989-05-25 Montedison Spa Monocristalli di arseniuro di gallio a bassa densita' di dislocazioni e di elevata purezza.

Also Published As

Publication number Publication date
AU597599B2 (en) 1990-06-07
GB2182262B (en) 1989-09-27
GB8626074D0 (en) 1986-12-03
IT1198454B (it) 1988-12-21
KR870004498A (ko) 1987-05-09
DE3637006A1 (de) 1987-05-07
MY100449A (en) 1990-10-15
FR2589489A1 (fr) 1987-05-07
AU6455086A (en) 1987-05-07
JPS62105998A (ja) 1987-05-16
DK518486A (da) 1987-05-01
SE8604627D0 (sv) 1986-10-30
CN86106346A (zh) 1987-06-17
FR2589489B1 (fr) 1994-06-10
IT8648592A0 (it) 1986-10-28
SE8604627L (sv) 1987-05-01
ATA289086A (de) 1996-01-15
NL8602738A (nl) 1987-05-18
DK518486D0 (da) 1986-10-30
CA1336061C (en) 1995-06-27
GB2182262A (en) 1987-05-13

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