JP2014509584A - 単結晶インゴットの製造方法およびこれによって製造された単結晶インゴットとウェハ - Google Patents
単結晶インゴットの製造方法およびこれによって製造された単結晶インゴットとウェハ Download PDFInfo
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- JP2014509584A JP2014509584A JP2014502450A JP2014502450A JP2014509584A JP 2014509584 A JP2014509584 A JP 2014509584A JP 2014502450 A JP2014502450 A JP 2014502450A JP 2014502450 A JP2014502450 A JP 2014502450A JP 2014509584 A JP2014509584 A JP 2014509584A
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- 239000013078 crystal Substances 0.000 title claims abstract description 91
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 31
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 34
- 239000010703 silicon Substances 0.000 claims abstract description 34
- 239000002019 doping agent Substances 0.000 claims description 10
- 235000012431 wafers Nutrition 0.000 description 49
- 230000000052 comparative effect Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 238000002844 melting Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 238000009413 insulation Methods 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 239000000523 sample Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
Abstract
【選択図】図4
Description
図1は、実施例に係る単結晶インゴットの製造方法が適用される単結晶の成長装置の例示図である。
Claims (16)
- チャンバ内のルツボでシリコン融液を形成するステップと、
前記シリコン融液上に種結晶を準備するステップと、
前記シリコン融液から単結晶インゴットを成長させるステップと、を含み、
前記チャンバの圧力を90Torr〜500Torrに制御することを特徴とする単結晶インゴットの製造方法。 - 前記インゴットを成長させるステップは、前記シリコン融液と前記単結晶インゴットのインターフェースを調節するステップを含む請求項1に記載の単結晶インゴットの製造方法。
- 前記インターフェースを調節するステップでは、前記種結晶の回転速度または前記ルツボの回転速度を調節する請求項2に記載の単結晶インゴットの製造方法。
- 前記インターフェースを調節するステップでは、前記インターフェースを3mm〜10mmに制御する請求項2に記載の単結晶インゴットの製造方法。
- 前記シリコン融液に、N型ドーパントを5E17atoms/cc以上の濃度でドーピングすることを特徴とする請求項1に記載の単結晶インゴットの製造方法。
- 前記単結晶インゴットの抵抗(RES)が0.001Ω-cm以下に制御される請求項1に記載の単結晶インゴットの製造方法。
- RRG(Radial Resistivity Gradient)が5%以内に制御されたシリコンウェハ。
- 前記ウェハのユニフォーミティ(Uniformity)が3%以内に制御された請求項7に記載のシリコンウェハ。
- 前記ウェハは、
センターと0.0001Ω-cm以内の抵抗(RES)値を有する第1領域と、
前記第1領域より0.0001Ω-cm高い抵抗(RES)値を有する第2領域と、
前記第2領域より0.0001Ω-cm高い抵抗(RES)値を有する第3領域と、を有する請求項7に記載のシリコンウェハ。 - 前記第1領域の面積は、前記ウェハの全体面積に対して31%以上である請求項9に記載のシリコンウェハ。
- 前記第1領域、前記第2領域および前記第3領域の合計領域が、前記ウェハの全体面積に対して76%以上である請求項9に記載のシリコンウェハ。
- RRG(radial resistivity gradient)が5%以内に制御された単結晶インゴット。
- 前記単結晶インゴットは、
前記単結晶インゴットの成長軸方向に対して垂直方向の断面に対して、
センターと0.0001Ω-cm以内の抵抗(RES)値を有する第1領域と、
前記第1領域より0.0001Ω-cm高い抵抗(RES)値を有する第2領域と、
前記第2領域より0.0001Ω-cm高い抵抗(RES)値を有する第3領域と、を有する請求項12に記載の単結晶インゴット。 - 前記第1領域が、前記断面の全体面積に対して31%以上である請求項13に記載の単結晶インゴット。
- 前記第1領域、前記第2領域および前記第3領域の合計領域が、前記断面の全体面積に対して76%以上である請求項13に記載の単結晶インゴット。
- 前記単結晶インゴットの断面内のユニフォーミティが3%以内に制御される請求項12に記載の単結晶インゴット。
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Application Number | Priority Date | Filing Date | Title |
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KR10-2011-0027632 | 2011-03-28 | ||
KR1020110027632A KR101303422B1 (ko) | 2011-03-28 | 2011-03-28 | 단결정 잉곳의 제조방법 및 이에 의해 제조된 단결정 잉곳과 웨이퍼 |
PCT/KR2012/001992 WO2012134092A2 (en) | 2011-03-28 | 2012-03-20 | Method of manufacturing single crystal ingot, and single crystal ingot and wafer manufactured thereby |
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JP2014509584A true JP2014509584A (ja) | 2014-04-21 |
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US (1) | US20140015108A1 (ja) |
JP (1) | JP2014509584A (ja) |
KR (1) | KR101303422B1 (ja) |
CN (1) | CN103459682A (ja) |
DE (1) | DE112012001486T5 (ja) |
WO (1) | WO2012134092A2 (ja) |
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DE112012001486T5 (de) | 2014-02-20 |
KR20120109865A (ko) | 2012-10-09 |
CN103459682A (zh) | 2013-12-18 |
WO2012134092A2 (en) | 2012-10-04 |
KR101303422B1 (ko) | 2013-09-05 |
WO2012134092A3 (en) | 2012-12-27 |
US20140015108A1 (en) | 2014-01-16 |
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