DE69014266D1 - Verfahren zur Ziehung eines Siliziumeinkristalles. - Google Patents

Verfahren zur Ziehung eines Siliziumeinkristalles.

Info

Publication number
DE69014266D1
DE69014266D1 DE69014266T DE69014266T DE69014266D1 DE 69014266 D1 DE69014266 D1 DE 69014266D1 DE 69014266 T DE69014266 T DE 69014266T DE 69014266 T DE69014266 T DE 69014266T DE 69014266 D1 DE69014266 D1 DE 69014266D1
Authority
DE
Germany
Prior art keywords
pulling
single crystal
silicon single
silicon
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69014266T
Other languages
English (en)
Other versions
DE69014266T2 (de
Inventor
Yoshihiro Kodama
Tetsuya Ishidaira
Koji Kanno
Shin-Ichi Furuse
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Application granted granted Critical
Publication of DE69014266D1 publication Critical patent/DE69014266D1/de
Publication of DE69014266T2 publication Critical patent/DE69014266T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C30B15/305—Stirring of the melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE1990614266 1989-09-19 1990-08-29 Verfahren zur Ziehung eines Siliziumeinkristalles. Expired - Fee Related DE69014266T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24314989A JPH0699223B2 (ja) 1989-09-19 1989-09-19 シリコン単結晶引上げ方法

Publications (2)

Publication Number Publication Date
DE69014266D1 true DE69014266D1 (de) 1995-01-05
DE69014266T2 DE69014266T2 (de) 1995-06-14

Family

ID=17099524

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1990614266 Expired - Fee Related DE69014266T2 (de) 1989-09-19 1990-08-29 Verfahren zur Ziehung eines Siliziumeinkristalles.

Country Status (3)

Country Link
EP (1) EP0419061B1 (de)
JP (1) JPH0699223B2 (de)
DE (1) DE69014266T2 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1324166C (zh) * 2002-11-12 2007-07-04 Memc电子材料有限公司 利用坩锅旋转以控制温度梯度的制备单晶硅的方法
JP5907045B2 (ja) * 2012-11-13 2016-04-20 信越半導体株式会社 シリコン単結晶の引き上げ方法
CN109576785A (zh) * 2018-12-29 2019-04-05 徐州鑫晶半导体科技有限公司 调节单晶硅生长过程中氧含量的方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4040895A (en) * 1975-10-22 1977-08-09 International Business Machines Corporation Control of oxygen in silicon crystals
US4511428A (en) * 1982-07-09 1985-04-16 International Business Machines Corporation Method of controlling oxygen content and distribution in grown silicon crystals

Also Published As

Publication number Publication date
EP0419061A3 (en) 1991-07-10
EP0419061A2 (de) 1991-03-27
EP0419061B1 (de) 1994-11-23
DE69014266T2 (de) 1995-06-14
JPH03109287A (ja) 1991-05-09
JPH0699223B2 (ja) 1994-12-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee