DE3853387T2 - Verfahren zum Züchten eines Kristalls. - Google Patents

Verfahren zum Züchten eines Kristalls.

Info

Publication number
DE3853387T2
DE3853387T2 DE3853387T DE3853387T DE3853387T2 DE 3853387 T2 DE3853387 T2 DE 3853387T2 DE 3853387 T DE3853387 T DE 3853387T DE 3853387 T DE3853387 T DE 3853387T DE 3853387 T2 DE3853387 T2 DE 3853387T2
Authority
DE
Germany
Prior art keywords
growing
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3853387T
Other languages
English (en)
Other versions
DE3853387D1 (de
Inventor
Takao Yonehara
Kenji Yamagata
Yuji Nishigaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE3853387D1 publication Critical patent/DE3853387D1/de
Publication of DE3853387T2 publication Critical patent/DE3853387T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02647—Lateral overgrowth
DE3853387T 1987-08-08 1988-08-05 Verfahren zum Züchten eines Kristalls. Expired - Fee Related DE3853387T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19869087 1987-08-08

Publications (2)

Publication Number Publication Date
DE3853387D1 DE3853387D1 (de) 1995-04-27
DE3853387T2 true DE3853387T2 (de) 1995-08-24

Family

ID=16395419

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3853387T Expired - Fee Related DE3853387T2 (de) 1987-08-08 1988-08-05 Verfahren zum Züchten eines Kristalls.

Country Status (3)

Country Link
EP (1) EP0306153B1 (de)
AU (1) AU623601B2 (de)
DE (1) DE3853387T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU623861B2 (en) * 1987-08-08 1992-05-28 Canon Kabushiki Kaisha Crystal article, method for producing the same and semiconductor device utilizing the same
JP2756320B2 (ja) * 1988-10-02 1998-05-25 キヤノン株式会社 結晶の形成方法
US5190613A (en) * 1988-10-02 1993-03-02 Canon Kabushiki Kaisha Method for forming crystals
JPH0395922A (ja) * 1989-09-07 1991-04-22 Canon Inc 半導体薄膜の形成方法
FR2912552B1 (fr) 2007-02-14 2009-05-22 Soitec Silicon On Insulator Structure multicouche et son procede de fabrication.
CN114045557A (zh) * 2021-10-25 2022-02-15 安徽光智科技有限公司 超高纯锗单晶的制备方法及设备

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4052782A (en) * 1974-09-03 1977-10-11 Sensor Technology, Inc. Tubular solar cell and method of making same
US4216037A (en) * 1978-01-06 1980-08-05 Takashi Katoda Method for manufacturing a heterojunction semiconductor device by disappearing intermediate layer
JPS6046074B2 (ja) * 1981-06-30 1985-10-14 日本電信電話株式会社 半導体結晶成長方法
US4657603A (en) * 1984-10-10 1987-04-14 Siemens Aktiengesellschaft Method for the manufacture of gallium arsenide thin film solar cells

Also Published As

Publication number Publication date
EP0306153A1 (de) 1989-03-08
AU623601B2 (en) 1992-05-21
EP0306153B1 (de) 1995-03-22
AU2045088A (en) 1989-02-09
DE3853387D1 (de) 1995-04-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee