DE69125118D1 - Verfahren zur Herstellung eines Diamant-Überzuges - Google Patents

Verfahren zur Herstellung eines Diamant-Überzuges

Info

Publication number
DE69125118D1
DE69125118D1 DE69125118T DE69125118T DE69125118D1 DE 69125118 D1 DE69125118 D1 DE 69125118D1 DE 69125118 T DE69125118 T DE 69125118T DE 69125118 T DE69125118 T DE 69125118T DE 69125118 D1 DE69125118 D1 DE 69125118D1
Authority
DE
Germany
Prior art keywords
production
diamond coating
diamond
coating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69125118T
Other languages
English (en)
Other versions
DE69125118T2 (de
Inventor
Kazuaki Kurihara
Kenichi Sasaki
Motonobu Kawarada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2402541A external-priority patent/JP2545498B2/ja
Priority claimed from JP3052467A external-priority patent/JP2579071B2/ja
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE69125118D1 publication Critical patent/DE69125118D1/de
Publication of DE69125118T2 publication Critical patent/DE69125118T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/453—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating passing the reaction gases through burners or torches, e.g. atmospheric pressure CVD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
DE69125118T 1990-12-15 1991-12-12 Verfahren zur Herstellung eines Diamant-Überzuges Expired - Fee Related DE69125118T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2402541A JP2545498B2 (ja) 1990-12-15 1990-12-15 ダイヤモンドの合成方法および装置
JP3052467A JP2579071B2 (ja) 1991-03-18 1991-03-18 ダイヤモンド膜形成方法及びその形成装置

Publications (2)

Publication Number Publication Date
DE69125118D1 true DE69125118D1 (de) 1997-04-17
DE69125118T2 DE69125118T2 (de) 1997-06-19

Family

ID=26393073

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69125118T Expired - Fee Related DE69125118T2 (de) 1990-12-15 1991-12-12 Verfahren zur Herstellung eines Diamant-Überzuges

Country Status (3)

Country Link
US (2) US5217700A (de)
EP (1) EP0491521B1 (de)
DE (1) DE69125118T2 (de)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4115930C1 (de) * 1991-05-16 1992-08-27 Utp Schweissmaterial Gmbh & Co Kg, 7812 Bad Krozingen, De
CA2077773A1 (en) * 1991-10-25 1993-04-26 Thomas R. Anthony Microwave, rf, or ac/dc discharge assisted flame deposition of cvd diamond
US5480686A (en) * 1991-11-05 1996-01-02 Research Triangle Institute Process and apparatus for chemical vapor deposition of diamond films using water-based plasma discharges
US5565249A (en) * 1992-05-07 1996-10-15 Fujitsu Limited Method for producing diamond by a DC plasma jet
JP3166919B2 (ja) * 1993-10-29 2001-05-14 ウンアクシス バルツェルス アクチェンゲゼルシャフト 被覆体とこの被覆体を製造する方法およびその使用
US5508368A (en) * 1994-03-03 1996-04-16 Diamonex, Incorporated Ion beam process for deposition of highly abrasion-resistant coatings
US5628824A (en) * 1995-03-16 1997-05-13 The University Of Alabama At Birmingham Research Foundation High growth rate homoepitaxial diamond film deposition at high temperatures by microwave plasma-assisted chemical vapor deposition
US5759623A (en) * 1995-09-14 1998-06-02 Universite De Montreal Method for producing a high adhesion thin film of diamond on a Fe-based substrate
US5932293A (en) * 1996-03-29 1999-08-03 Metalspray U.S.A., Inc. Thermal spray systems
US6120640A (en) * 1996-12-19 2000-09-19 Applied Materials, Inc. Boron carbide parts and coatings in a plasma reactor
DE19825983C2 (de) * 1997-06-11 2002-12-12 Fraunhofer Ges Forschung Verfahren zum Aufbringen von Diamant- und karbidische Phasen enthaltenden Komposit-Gradienten-Schichten
TWI232595B (en) 1999-06-04 2005-05-11 Semiconductor Energy Lab Electroluminescence display device and electronic device
US7288420B1 (en) 1999-06-04 2007-10-30 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing an electro-optical device
US8853696B1 (en) * 1999-06-04 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and electronic device
AU5783600A (en) * 1999-07-02 2001-01-22 Microcoating Technologies, Inc. Method of coating ceramics using ccvd
TW480722B (en) 1999-10-12 2002-03-21 Semiconductor Energy Lab Manufacturing method of electro-optical device
US6605352B1 (en) * 2000-01-06 2003-08-12 Saint-Gobain Ceramics & Plastics, Inc. Corrosion and erosion resistant thin film diamond coating and applications therefor
US6641673B2 (en) * 2000-12-20 2003-11-04 General Electric Company Fluid injector for and method of prolonged delivery and distribution of reagents into plasma
TW588570B (en) * 2001-06-18 2004-05-21 Semiconductor Energy Lab Light emitting device and method of fabricating the same
US7049226B2 (en) 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
US6916398B2 (en) * 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
US7780785B2 (en) * 2001-10-26 2010-08-24 Applied Materials, Inc. Gas delivery apparatus for atomic layer deposition
US20060127599A1 (en) * 2002-02-12 2006-06-15 Wojak Gregory J Process and apparatus for preparing a diamond substance
US20100151130A1 (en) * 2004-12-10 2010-06-17 Koninklijke Philips Electronics, N.V. Combustion chemical vapor deposition on temperature-sensitive substrates
EP1888810A2 (de) * 2004-12-10 2008-02-20 Koninklijke Philips Electronics N.V. Substrattemperatursteuerung für verbrennungs-cvd
DE102006023690A1 (de) * 2006-05-19 2007-11-22 Schaeffler Kg Verfahren zur Herstellung eines Wälzlagerbauteils sowie Wälzlagerbauteil
US7482672B2 (en) * 2006-06-30 2009-01-27 International Business Machines Corporation Semiconductor device structures for bipolar junction transistors
US9783885B2 (en) 2010-08-11 2017-10-10 Unit Cell Diamond Llc Methods for producing diamond mass and apparatus therefor
US9061917B2 (en) 2010-08-11 2015-06-23 Unit Cell Diamond Llc Combinatorial synthesis of the diamond unit cell
US8778295B2 (en) 2010-08-11 2014-07-15 Daniel Hodes Combinatorial synthesis of diamond
US10258959B2 (en) 2010-08-11 2019-04-16 Unit Cell Diamond Llc Methods of producing heterodiamond and apparatus therefor
EP2846909B1 (de) * 2012-05-10 2018-09-12 University of Connecticut Verfahren und vorrichtung zur herstellung von katalysatorschichten
CN104458486B (zh) * 2014-12-12 2016-09-21 鄂州市金刚石技术研发中心 一种金刚石粉末柱中金属含量的测试方法
US10488397B2 (en) 2016-04-05 2019-11-26 University Of Connecticut Metal oxide based sensors for sensing low concentration of specific gases prepared by a flame based process

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6029309B2 (ja) * 1980-10-09 1985-07-10 ブロウニング・エンジニアリング・コ−ポレ−シヨン 火炎噴流方法及び装置
US4416421A (en) * 1980-10-09 1983-11-22 Browning Engineering Corporation Highly concentrated supersonic liquified material flame spray method and apparatus
SE442305B (sv) * 1984-06-27 1985-12-16 Santrade Ltd Forfarande for kemisk gasutfellning (cvd) for framstellning av en diamantbelagd sammansatt kropp samt anvendning av kroppen
US4645977A (en) * 1984-08-31 1987-02-24 Matsushita Electric Industrial Co., Ltd. Plasma CVD apparatus and method for forming a diamond like carbon film
DE3884653T2 (de) * 1987-04-03 1994-02-03 Fujitsu Ltd Verfahren und Vorrichtung zur Gasphasenabscheidung von Diamant.
JPS6433096A (en) * 1987-04-03 1989-02-02 Fujitsu Ltd Gaseous phase synthesis for diamond
JP2597497B2 (ja) * 1988-01-14 1997-04-09 洋一 広瀬 気相法ダイヤモンドの合成法
US4981671A (en) * 1988-02-09 1991-01-01 National Institute For Research In Inorganic Materials Method for preparing diamond or diamond-like carbon by combustion flame
JPH0222741A (ja) * 1988-07-11 1990-01-25 Nec Field Service Ltd 障害予知自動通報方式
ES2045458T3 (es) * 1988-09-20 1994-01-16 Plasma Technik Ag Revestimiento abrasible mejorado y produccion del mismo.
CA2002497A1 (en) * 1988-12-28 1990-06-28 Anthony J. Rotolico High velocity powder thermal spray method for spraying non-meltable materials
JPH0794360B2 (ja) * 1989-01-24 1995-10-11 住友電気工業株式会社 ダイヤモンドの気相合成法
JP2680676B2 (ja) * 1989-04-18 1997-11-19 昭和電工株式会社 気相法ダイヤモンドの合成法
US5104634A (en) * 1989-04-20 1992-04-14 Hercules Incorporated Process for forming diamond coating using a silent discharge plasma jet process
JPH03208892A (ja) * 1990-01-08 1991-09-12 Fujitsu Ltd ダイヤモンド膜の合成方法および装置

Also Published As

Publication number Publication date
EP0491521B1 (de) 1997-03-12
US5217700A (en) 1993-06-08
DE69125118T2 (de) 1997-06-19
EP0491521A3 (en) 1993-03-10
US5338364A (en) 1994-08-16
EP0491521A2 (de) 1992-06-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee