DE69130351T2 - Verfahren zur Herstellung eines GMR Gegenstandes - Google Patents
Verfahren zur Herstellung eines GMR GegenstandesInfo
- Publication number
- DE69130351T2 DE69130351T2 DE69130351T DE69130351T DE69130351T2 DE 69130351 T2 DE69130351 T2 DE 69130351T2 DE 69130351 T DE69130351 T DE 69130351T DE 69130351 T DE69130351 T DE 69130351T DE 69130351 T2 DE69130351 T2 DE 69130351T2
- Authority
- DE
- Germany
- Prior art keywords
- gmr
- article
- production
- gmr article
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
- H01F10/3281—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn only by use of asymmetry of the magnetic film pair itself, i.e. so-called pseudospin valve [PSV] structure, e.g. NiFe/Cu/Co
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
- H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Magnetic active materials
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/90—Magnetic feature
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/922—Static electricity metal bleed-off metallic stock
- Y10S428/9265—Special properties
- Y10S428/928—Magnetic property
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/11—Magnetic recording head
- Y10T428/1107—Magnetoresistive
- Y10T428/1121—Multilayer
- Y10T428/1129—Super lattice [e.g., giant magneto resistance [GMR] or colossal magneto resistance [CMR], etc.]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12632—Four or more distinct components with alternate recurrence of each type component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12806—Refractory [Group IVB, VB, or VIB] metal-base component
- Y10T428/12819—Group VB metal-base component
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12806—Refractory [Group IVB, VB, or VIB] metal-base component
- Y10T428/12826—Group VIB metal-base component
- Y10T428/12847—Cr-base component
- Y10T428/12854—Next to Co-, Fe-, or Ni-base component
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12861—Group VIII or IB metal-base component
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12861—Group VIII or IB metal-base component
- Y10T428/12889—Au-base component
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12861—Group VIII or IB metal-base component
- Y10T428/12903—Cu-base component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12861—Group VIII or IB metal-base component
- Y10T428/12944—Ni-base component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12861—Group VIII or IB metal-base component
- Y10T428/12951—Fe-base component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
- Y10T428/264—Up to 3 mils
- Y10T428/265—1 mil or less
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP293566/90 | 1990-11-01 | ||
JP29356690 | 1990-11-01 | ||
JP63527/91 | 1991-03-27 | ||
JP06352791A JP3483895B2 (ja) | 1990-11-01 | 1991-03-27 | 磁気抵抗効果膜 |
Publications (3)
Publication Number | Publication Date |
---|---|
DE69130351D1 DE69130351D1 (de) | 1998-11-19 |
DE69130351T2 true DE69130351T2 (de) | 1999-04-01 |
DE69130351T3 DE69130351T3 (de) | 2005-05-04 |
Family
ID=26404668
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69130351T Expired - Lifetime DE69130351T3 (de) | 1990-11-01 | 1991-11-01 | Verfahren zur Herstellung eines GMR Gegenstandes |
Country Status (4)
Country | Link |
---|---|
US (2) | US5534355A (de) |
EP (1) | EP0485129B2 (de) |
JP (1) | JP3483895B2 (de) |
DE (1) | DE69130351T3 (de) |
Families Citing this family (53)
Publication number | Priority date | Publication date | Assignee | Title |
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FR2685489B1 (fr) * | 1991-12-23 | 1994-08-05 | Thomson Csf | Capteur de champ magnetique faible a effet magnetoresistif. |
JP3381957B2 (ja) * | 1992-08-03 | 2003-03-04 | 株式会社東芝 | 磁気抵抗効果素子、磁気ヘッドおよび磁気センサ |
JP2725977B2 (ja) * | 1992-08-28 | 1998-03-11 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 磁気抵抗センサ及びその製造方法、磁気記憶システム |
US5287238A (en) * | 1992-11-06 | 1994-02-15 | International Business Machines Corporation | Dual spin valve magnetoresistive sensor |
DE4301704A1 (de) * | 1993-01-22 | 1994-07-28 | Siemens Ag | Vorrichtung zum Erfassen einer Winkelposition eines Objektes |
US5630916A (en) | 1993-03-02 | 1997-05-20 | Cvc Products, Inc. | Magnetic orienting device for thin film deposition and method of use |
JP2629583B2 (ja) * | 1993-05-13 | 1997-07-09 | 日本電気株式会社 | 磁気抵抗効果膜およびその製造方法 |
US5405702A (en) * | 1993-12-30 | 1995-04-11 | Minnesota Mining And Manufacturing Company | Method for manufacturing a thin-film EAS and marker |
US6256222B1 (en) | 1994-05-02 | 2001-07-03 | Matsushita Electric Industrial Co., Ltd. | Magnetoresistance effect device, and magnetoresistaance effect type head, memory device, and amplifying device using the same |
US5841611A (en) * | 1994-05-02 | 1998-11-24 | Matsushita Electric Industrial Co., Ltd. | Magnetoresistance effect device and magnetoresistance effect type head, memory device, and amplifying device using the same |
JPH0845034A (ja) * | 1994-07-29 | 1996-02-16 | Sony Corp | 磁気抵抗型磁気ヘッド及び記録・再生用複合型磁気ヘッド、並びにこれらの製造方法 |
US5891586A (en) * | 1995-01-27 | 1999-04-06 | Alps Electric Co., Ltd. | Multilayer thin-film for magnetoresistive device |
JPH08287420A (ja) * | 1995-04-11 | 1996-11-01 | Hitachi Metals Ltd | 磁気抵抗効果膜 |
US5850318A (en) * | 1995-06-06 | 1998-12-15 | Seagate Technology, Inc. | Slotless spindle motor for disc drive |
DE19608730C2 (de) * | 1996-03-06 | 1998-05-28 | Siemens Ag | Magnetfeldempfindlicher Sensor mit einem Dünnschichtaufbau und Verwendung des Sensors |
JP3327375B2 (ja) * | 1996-04-26 | 2002-09-24 | 富士通株式会社 | 磁気抵抗効果型トランスデューサ、その製造方法及び磁気記録装置 |
US5945904A (en) * | 1996-09-06 | 1999-08-31 | Ford Motor Company | Giant magnetoresistors with high sensitivity and reduced hysteresis and thin layers |
US6150015A (en) | 1997-12-04 | 2000-11-21 | Komag, Incorporated | Ultra-thin nucleation layer for magnetic thin film media and the method for manufacturing the same |
JP2001522537A (ja) * | 1998-01-28 | 2001-11-13 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 透磁性フィルム作成方法 |
US6134090A (en) * | 1998-03-20 | 2000-10-17 | Seagate Technology Llc | Enhanced spin-valve/GMR magnetic sensor with an insulating boundary layer |
US6738236B1 (en) | 1998-05-07 | 2004-05-18 | Seagate Technology Llc | Spin valve/GMR sensor using synthetic antiferromagnetic layer pinned by Mn-alloy having a high blocking temperature |
US6191926B1 (en) | 1998-05-07 | 2001-02-20 | Seagate Technology Llc | Spin valve magnetoresistive sensor using permanent magnet biased artificial antiferromagnet layer |
US6356420B1 (en) | 1998-05-07 | 2002-03-12 | Seagate Technology Llc | Storage system having read head utilizing GMR and AMr effects |
US6042707A (en) * | 1998-05-22 | 2000-03-28 | Cvc Products, Inc. | Multiple-coil electromagnet for magnetically orienting thin films |
US6106682A (en) * | 1998-05-22 | 2000-08-22 | Cvc Products, Inc. | Thin-film processing electromagnet for low-skew magnetic orientation |
US6169647B1 (en) | 1998-06-11 | 2001-01-02 | Seagate Technology Llc | Giant magnetoresistive sensor having weakly pinned ferromagnetic layer |
US6469878B1 (en) | 1999-02-11 | 2002-10-22 | Seagate Technology Llc | Data head and method using a single antiferromagnetic material to pin multiple magnetic layers with differing orientation |
US6331773B1 (en) | 1999-04-16 | 2001-12-18 | Storage Technology Corporation | Pinned synthetic anti-ferromagnet with oxidation protection layer |
DE19924756A1 (de) * | 1999-05-29 | 2000-11-30 | Bosch Gmbh Robert | Magnetoresistives Element |
EP1141737B1 (de) * | 1999-06-18 | 2008-01-16 | Koninklijke Philips Electronics N.V. | Magnetisches messystem mit irreversibler charakteristik, sowie methode zur erzeugung, reparatur und verwendung eines solchen systems |
US6611405B1 (en) * | 1999-09-16 | 2003-08-26 | Kabushiki Kaisha Toshiba | Magnetoresistive element and magnetic memory device |
US6783635B2 (en) * | 1999-12-09 | 2004-08-31 | International Business Machines Corporation | Spin valve sensor free layer structure with a cobalt based layer that promotes magnetic stability and high magnetoresistance |
US6473336B2 (en) | 1999-12-16 | 2002-10-29 | Kabushiki Kaisha Toshiba | Magnetic memory device |
US6639763B1 (en) * | 2000-03-15 | 2003-10-28 | Tdk Corporation | Magnetic transducer and thin film magnetic head |
US6914759B2 (en) * | 2000-09-19 | 2005-07-05 | Seagate Technology Llc | Giant magnetoresistive sensor having selfconsistent demagnetization fields |
US6730420B1 (en) | 2000-10-31 | 2004-05-04 | Komag, Inc. | Magnetic thin film recording media having extremely low noise and high thermal stability |
DE10118650A1 (de) * | 2001-04-14 | 2002-10-17 | Philips Corp Intellectual Pty | Winkelsensor sowie Verfahren zum Erhöhen der Anisotropiefeldstärke einer Sensoreinheit eines Winkelsensors |
US20030002231A1 (en) * | 2001-06-29 | 2003-01-02 | Dee Richard Henry | Reduced sensitivity spin valve head for magnetic tape applications |
US20030002232A1 (en) * | 2001-06-29 | 2003-01-02 | Storage Technology Corporation | Apparatus and method of making a reduced sensitivity spin valve sensor apparatus in which a flux carrying capacity is increased |
DE10149737A1 (de) * | 2001-10-09 | 2003-04-24 | Infineon Technologies Ag | Halbleiterspeicher mit sich kreuzenden Wort- und Bitleitungen, an denen magnetoresistive Speicherzellen angeordnet sind |
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JP4343006B2 (ja) * | 2003-06-27 | 2009-10-14 | 株式会社東芝 | 磁気素子、磁気情報再生用ヘッド及び磁気情報再生装置 |
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US6967366B2 (en) | 2003-08-25 | 2005-11-22 | Freescale Semiconductor, Inc. | Magnetoresistive random access memory with reduced switching field variation |
US7129098B2 (en) | 2004-11-24 | 2006-10-31 | Freescale Semiconductor, Inc. | Reduced power magnetoresistive random access memory elements |
US7488545B2 (en) * | 2006-04-12 | 2009-02-10 | Hitachi Global Storage Technologies Netherlands B.V. | Perpendicular magnetic recording medium with laminated recording layers formed of exchange-coupled ferromagnetic layers |
JP6060484B2 (ja) * | 2012-01-19 | 2017-01-18 | 富士電機株式会社 | 磁気記録媒体の製造方法 |
KR102222262B1 (ko) | 2013-11-13 | 2021-03-04 | 삼성전자주식회사 | 자기저항 구조체 및 그 제조 방법, 이를 구비하는 전자소자 |
JP7107285B2 (ja) * | 2019-07-12 | 2022-07-27 | 株式会社村田製作所 | 磁性構造体および磁性構造体の製造方法 |
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DE1252739B (de) * | 1964-03-17 | 1967-10-26 | Siemens Aktiengesellschaft, Berlin und München, München | Speicherelement mit gestapelten magnetischen Schichten |
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DE2912659A1 (de) * | 1979-03-22 | 1980-09-25 | Landis & Gyr Ag | Magnetische duennschicht, verfahren zu deren herstellung und deren verwendung |
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JPS6063710A (ja) * | 1983-09-19 | 1985-04-12 | Hitachi Ltd | 磁気ディスク媒体 |
US4687712A (en) * | 1983-12-12 | 1987-08-18 | Matsushita Electric Industrial Co., Ltd. | Vertical magnetic recording medium |
JPS60251682A (ja) * | 1984-05-29 | 1985-12-12 | Hitachi Ltd | 磁気抵抗効果型素子 |
US4587176A (en) * | 1985-01-14 | 1986-05-06 | E. I. Du Pont De Nemours And Company | Layered coherent structures for magnetic recording |
US4677032A (en) * | 1985-09-23 | 1987-06-30 | International Business Machines Corporation | Vertical magnetic recording media with multilayered magnetic film structure |
JPS62142380A (ja) † | 1985-12-17 | 1987-06-25 | Sharp Corp | 磁気抵抗効果素子 |
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US4857418A (en) † | 1986-12-08 | 1989-08-15 | Honeywell Inc. | Resistive overlayer for magnetic films |
US4847161A (en) * | 1986-12-19 | 1989-07-11 | Siemens Aktiengesellschaft | Magnetically anisotropic recording medium |
US4935311A (en) † | 1987-04-13 | 1990-06-19 | Hitachi, Ltd. | Magnetic multilayered film and magnetic head using the same |
EP0304280B1 (de) * | 1987-08-21 | 1996-05-29 | Nippondenso Co., Ltd. | Anordnung zur Detektion von Magnetismus |
DE3820475C1 (de) * | 1988-06-16 | 1989-12-21 | Kernforschungsanlage Juelich Gmbh, 5170 Juelich, De | |
JPH0223681A (ja) * | 1988-07-12 | 1990-01-25 | Nec Corp | 磁気抵抗効果素子 |
US5051288A (en) * | 1989-03-16 | 1991-09-24 | International Business Machines Corporation | Thin film magnetic recording disk comprising alternating layers of a CoNi or CoPt alloy and a non-magnetic spacer layer |
FR2648942B1 (fr) * | 1989-06-27 | 1995-08-11 | Thomson Csf | Capteur a effet magnetoresistif |
US5132859A (en) * | 1990-08-23 | 1992-07-21 | International Business Machines Corporation | Thin film structures for magnetic recording heads |
US5206590A (en) * | 1990-12-11 | 1993-04-27 | International Business Machines Corporation | Magnetoresistive sensor based on the spin valve effect |
US5159513A (en) * | 1991-02-08 | 1992-10-27 | International Business Machines Corporation | Magnetoresistive sensor based on the spin valve effect |
-
1991
- 1991-03-27 JP JP06352791A patent/JP3483895B2/ja not_active Expired - Lifetime
- 1991-11-01 EP EP91310132A patent/EP0485129B2/de not_active Expired - Lifetime
- 1991-11-01 DE DE69130351T patent/DE69130351T3/de not_active Expired - Lifetime
-
1995
- 1995-04-19 US US08/424,082 patent/US5534355A/en not_active Expired - Lifetime
-
1996
- 1996-04-23 US US08/636,460 patent/US5616370A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0485129B1 (de) | 1998-10-14 |
US5534355A (en) | 1996-07-09 |
EP0485129A1 (de) | 1992-05-13 |
JPH04212402A (ja) | 1992-08-04 |
DE69130351T3 (de) | 2005-05-04 |
EP0485129B2 (de) | 2004-08-25 |
DE69130351D1 (de) | 1998-11-19 |
JP3483895B2 (ja) | 2004-01-06 |
US5616370A (en) | 1997-04-01 |
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