DE60005985D1 - Verfahren zur herstellung eines silizium-einkristalles mit einem gleichmässigen zeittemperaturverlauf - Google Patents

Verfahren zur herstellung eines silizium-einkristalles mit einem gleichmässigen zeittemperaturverlauf

Info

Publication number
DE60005985D1
DE60005985D1 DE60005985T DE60005985T DE60005985D1 DE 60005985 D1 DE60005985 D1 DE 60005985D1 DE 60005985 T DE60005985 T DE 60005985T DE 60005985 T DE60005985 T DE 60005985T DE 60005985 D1 DE60005985 D1 DE 60005985D1
Authority
DE
Germany
Prior art keywords
time
producing
single crystal
silicon single
time temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60005985T
Other languages
English (en)
Other versions
DE60005985T2 (de
Inventor
Makoto Kojima
Yasuhiro Ishii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SunEdison Inc
Original Assignee
SunEdison Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SunEdison Inc filed Critical SunEdison Inc
Application granted granted Critical
Publication of DE60005985D1 publication Critical patent/DE60005985D1/de
Publication of DE60005985T2 publication Critical patent/DE60005985T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1028—Crucibleless apparatus having means providing movement of discrete droplets or solid particles to thin-film precursor [e.g., Verneuil method]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE60005985T 1999-09-02 2000-08-11 Verfahren zur herstellung eines silizium-einkristalles mit einem gleichmässigen zeittemperaturverlauf Expired - Lifetime DE60005985T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US15206699P 1999-09-02 1999-09-02
US152066P 1999-09-02
US09/596,493 US6458202B1 (en) 1999-09-02 2000-06-19 Process for preparing single crystal silicon having uniform thermal history
US596493 2000-06-19
PCT/US2000/022090 WO2001016406A1 (en) 1999-09-02 2000-08-11 Process for preparing single crystal silicon having uniform thermal history

Publications (2)

Publication Number Publication Date
DE60005985D1 true DE60005985D1 (de) 2003-11-20
DE60005985T2 DE60005985T2 (de) 2004-07-29

Family

ID=26849219

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60005985T Expired - Lifetime DE60005985T2 (de) 1999-09-02 2000-08-11 Verfahren zur herstellung eines silizium-einkristalles mit einem gleichmässigen zeittemperaturverlauf

Country Status (8)

Country Link
US (1) US6458202B1 (de)
EP (1) EP1218571B1 (de)
JP (1) JP4700874B2 (de)
KR (1) KR100717237B1 (de)
CN (1) CN1372604A (de)
DE (1) DE60005985T2 (de)
TW (1) TW562881B (de)
WO (1) WO2001016406A1 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1199387B1 (de) * 2000-02-22 2011-09-21 Shin-Etsu Handotai Co., Ltd. Verfahren zur herstellung von einkristallen für halbleiter
US20040055527A1 (en) * 2000-11-30 2004-03-25 Makoto Kojima Process for controlling thermal history of vacancy-dominated, single crystal silicon
US6743495B2 (en) * 2001-03-30 2004-06-01 Memc Electronic Materials, Inc. Thermal annealing process for producing silicon wafers with improved surface characteristics
WO2003029533A1 (fr) * 2001-09-28 2003-04-10 Komatsu Denshi Kinzoku Kabushiki Kaisha Appareil et procede de fabrication d'un semi-conducteur monocristallin et lingot monocristallin
KR100588425B1 (ko) * 2003-03-27 2006-06-12 실트로닉 아게 실리콘 단결정, 결정된 결함분포를 가진 실리콘 단결정 및 실리콘 반도체 웨이퍼의 제조방법
JP2005162599A (ja) 2003-12-03 2005-06-23 Siltron Inc 均一なベイカンシ欠陥を有するシリコン単結晶インゴット、シリコンウエハ、シリコン単結晶インゴットの製造装置、及びシリコン単結晶インゴットの製造方法
JP5023900B2 (ja) * 2006-09-05 2012-09-12 株式会社Ｓｕｍｃｏ エピタキシャルシリコンウェーハ
DE102007005346B4 (de) * 2007-02-02 2015-09-17 Siltronic Ag Halbleiterscheiben aus Silicium und Verfahren zu deren Herstellung
DE102010023101B4 (de) * 2010-06-09 2016-07-07 Siltronic Ag Verfahren zur Herstellung von Halbleiterscheiben aus Silizium
KR101340109B1 (ko) * 2011-12-06 2013-12-10 주식회사 엘지실트론 인상방법
US10184193B2 (en) 2015-05-18 2019-01-22 Globalwafers Co., Ltd. Epitaxy reactor and susceptor system for improved epitaxial wafer flatness
CN109750350A (zh) * 2019-03-20 2019-05-14 丽江隆基硅材料有限公司 一种调整单晶炉加热器功率的方法及单晶炉
JP2022526817A (ja) * 2019-04-11 2022-05-26 グローバルウェーハズ カンパニー リミテッド 本体長さ後半の歪みが低減されたインゴットの製造方法
CN110923806B (zh) * 2019-12-24 2021-07-23 西安奕斯伟硅片技术有限公司 一种单晶炉及单晶硅棒的制备方法
US11987900B2 (en) * 2020-11-11 2024-05-21 Globalwafers Co., Ltd. Methods for forming a silicon substrate with reduced grown-in nuclei for epitaxial defects and methods for forming an epitaxial wafer

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02221184A (ja) * 1989-02-20 1990-09-04 Osaka Titanium Co Ltd 単結晶製造方法及びその装置
JP2686460B2 (ja) 1990-03-12 1997-12-08 住友シチックス株式会社 単結晶製造方法
JP2613498B2 (ja) 1991-03-15 1997-05-28 信越半導体株式会社 Ｓｉ単結晶ウエーハの熱処理方法
JP3085146B2 (ja) * 1995-05-31 2000-09-04 住友金属工業株式会社 シリコン単結晶ウェーハおよびその製造方法
US5779791A (en) 1996-08-08 1998-07-14 Memc Electronic Materials, Inc. Process for controlling thermal history of Czochralski-grown silicon
DE19652543A1 (de) 1996-12-17 1998-06-18 Wacker Siltronic Halbleitermat Verfahren zur Herstellung eines Silicium-Einkristalls und Heizvorrichtung zur Durchführung des Verfahrens
US5994761A (en) 1997-02-26 1999-11-30 Memc Electronic Materials Spa Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor
WO1998045508A1 (en) * 1997-04-09 1998-10-15 Memc Electronic Materials, Inc. Low defect density, vacancy dominated silicon
DE69913731T2 (de) * 1998-10-14 2004-10-14 Memc Electronic Materials, Inc. Im wesentlichen defektfreie epitaktische siliziumscheiben

Also Published As

Publication number Publication date
KR100717237B1 (ko) 2007-05-11
JP2003508332A (ja) 2003-03-04
EP1218571A1 (de) 2002-07-03
JP4700874B2 (ja) 2011-06-15
EP1218571B1 (de) 2003-10-15
WO2001016406A1 (en) 2001-03-08
KR20020026379A (ko) 2002-04-09
CN1372604A (zh) 2002-10-02
TW562881B (en) 2003-11-21
DE60005985T2 (de) 2004-07-29
US6458202B1 (en) 2002-10-01

Similar Documents

Publication Publication Date Title
DE69916177D1 (de) Verfahren zur Herstellung eines Siliziumkarbid-Einkristalls
DE60038095D1 (de) Verfahren zur Herstellung einer trägerfreien Kristallschicht
DE59900525D1 (de) Verfahren zur Herstellung eines Einkristalls
DE69508358D1 (de) Verfahren zur Herstellung eines Silizium-Einkristalles mit verringerten Kristalldefekten
DE69941652D1 (de) Verfahren zur Herstellung eines Silizium-auf-Isolator-Substrats
DE60039268D1 (de) Verfahren zur Herstellung eines TFT
DE60034406D1 (de) Verfahren zur herstellung von einem dünnschichtfeldeffekttransistor
DE60131649D1 (de) Verfahren zur herstellung eines kristalls
DE60023415D1 (de) Verfahren zur Herstellung eines Polarisationsbeugungsfilms
DE60038423D1 (de) Verfahren zur Herstellung eines Halbleiterbauelements
DE69912376D1 (de) Verfahren zur herstellung eines halbleiterbauelements
DE69604235D1 (de) Verfahren zur herstellung eines siliziumeinkristalles mit niediger fehlerdichte
DE69919742D1 (de) Verfahren zur herstellung eines bauteiles
DE60005985D1 (de) Verfahren zur herstellung eines silizium-einkristalles mit einem gleichmässigen zeittemperaturverlauf
DE69621385D1 (de) Verfahren zur herstellung einer halbleiteranordnung mit kristalldefekten
DE69707118D1 (de) Verfahren zur herstellung eines glasartikels
DE69902242D1 (de) Verfahren zur herstellung eines brotaufstrichs
DE69923567D1 (de) Verfahren zur herstellung eines siliciumcarbidsinterkörpers
DE69934643D1 (de) Verfahren zur herstellung eines einkristalls mit halbleitender zusammensetzung
DE69904675D1 (de) Verfahren zur Herstellung eines Stickstoff- dotierten Siliciumeinkristalles mit geringer Defektdichte
DE69938510D1 (de) Verfahren zur herstellung eines einkristallsiliziumkarbids
DE60027096D1 (de) Verfahren zur Herstellung eines Treibriemens
DE50001155D1 (de) Verfahren zur Herstellung eines Stutzens
DE69803377D1 (de) Verfahren zur herstellung eines mikrosensors mit mikrogefertigtem silizium
DE69922617D1 (de) Verfahren zur Herstellung eines Halbleiterbauelementes

Legal Events

Date Code Title Description
8364 No opposition during term of opposition