DE69934643D1 - Verfahren zur herstellung eines einkristalls mit halbleitender zusammensetzung - Google Patents

Verfahren zur herstellung eines einkristalls mit halbleitender zusammensetzung

Info

Publication number
DE69934643D1
DE69934643D1 DE69934643T DE69934643T DE69934643D1 DE 69934643 D1 DE69934643 D1 DE 69934643D1 DE 69934643 T DE69934643 T DE 69934643T DE 69934643 T DE69934643 T DE 69934643T DE 69934643 D1 DE69934643 D1 DE 69934643D1
Authority
DE
Germany
Prior art keywords
preparing
composition
single crystal
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69934643T
Other languages
English (en)
Other versions
DE69934643T2 (de
Inventor
Toshiaki Asahi
Keiji Kainosho
Tatsuya Nozaki
Kenji Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Mining Holdings Inc
Eneos Corp
Original Assignee
Nippon Mining and Metals Co Ltd
Nippon Mining Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP11443298A external-priority patent/JP4344021B2/ja
Priority claimed from JP15541698A external-priority patent/JP4117813B2/ja
Application filed by Nippon Mining and Metals Co Ltd, Nippon Mining Co Ltd filed Critical Nippon Mining and Metals Co Ltd
Publication of DE69934643D1 publication Critical patent/DE69934643D1/de
Application granted granted Critical
Publication of DE69934643T2 publication Critical patent/DE69934643T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69934643T 1998-03-31 1999-03-29 Verfahren zur herstellung eines einkristalls mit halbleitender zusammensetzung Expired - Lifetime DE69934643T2 (de)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP10185998 1998-03-31
JP10185998 1998-03-31
JP11443298A JP4344021B2 (ja) 1998-04-24 1998-04-24 ＩｎＰ単結晶の製造方法
JP11443298 1998-04-24
JP15541698 1998-05-21
JP15541698A JP4117813B2 (ja) 1998-03-31 1998-05-21 化合物半導体単結晶の製造方法
PCT/JP1999/001581 WO1999050481A1 (fr) 1998-03-31 1999-03-29 Procede de fabrication d'un monocristal de compose semiconducteur

Publications (2)

Publication Number Publication Date
DE69934643D1 true DE69934643D1 (de) 2007-02-15
DE69934643T2 DE69934643T2 (de) 2007-10-25

Family

ID=27309562

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69942919T Expired - Lifetime DE69942919D1 (de) 1998-03-31 1999-03-29 Verfahren zur Herstellung eines Verbindungshalbleiter-Einkristalls
DE69934643T Expired - Lifetime DE69934643T2 (de) 1998-03-31 1999-03-29 Verfahren zur herstellung eines einkristalls mit halbleitender zusammensetzung

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE69942919T Expired - Lifetime DE69942919D1 (de) 1998-03-31 1999-03-29 Verfahren zur Herstellung eines Verbindungshalbleiter-Einkristalls

Country Status (4)

Country Link
US (1) US6334897B1 (de)
EP (2) EP1571240B1 (de)
DE (2) DE69942919D1 (de)
WO (1) WO1999050481A1 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2806100B1 (fr) * 2000-03-10 2002-09-20 Commissariat Energie Atomique Dispositif et procede de cristallogenese
US20070034141A1 (en) * 2001-11-02 2007-02-15 Pengdi Han Hybrid stockbarger zone-leveling melting method for directed crystallization and growth of single crystals of lead magnesium niobate-lead titanate (PMN-PT) solid solutions and related piezocrystals
DE10246567C1 (de) * 2002-10-05 2003-12-18 Crystal Growing Systems Gmbh Verfahren zum Kalibrieren der Temperatur-Regeleinrichtung eines Vertical-Gradient-Freeze-Kristallzüchtungsofens und Vertical-Gradient-Freeze-Kristallzüchtungsofen zur Durchführung dieses Verfahrens
JP2005015264A (ja) * 2003-06-25 2005-01-20 Canon Inc 結晶製造装置及び方法
US7399360B2 (en) * 2003-07-03 2008-07-15 Hitachi Chemical Company, Ltd. Crucible and method of growing single crystal by using crucible
GB2418158B (en) * 2003-07-17 2007-05-30 Showa Denko Kk InP single crystal, GaAs single crystal, and method for production thereof
JP2005298254A (ja) * 2004-04-09 2005-10-27 Hitachi Cable Ltd 化合物半導体単結晶成長用容器及びそれを用いた化合物半導体単結晶の製造方法
US20090025628A1 (en) * 2005-08-17 2009-01-29 Pengdi Han Hybrid stockbarger zone-leveling melting method for directed crystallization and growth of single crystals of lead magnesium niobate-lead titanate (pmn-pt) solid solutions and related piezocrystals
BRPI0706659A2 (pt) * 2006-01-20 2011-04-05 Bp Corp North America Inc métodos de fabricação de silìcio moldado e de célula solar, células solares, corpos e wafers de silìcio multicristalinos ordenados geometricamente continuos
CN101555620A (zh) * 2008-04-07 2009-10-14 Axt公司 晶体生长装置及方法
EP2501844A4 (de) * 2009-10-08 2013-08-07 Axt Inc Kristallzüchtungsvorrichtung und -verfahren
TWM423906U (en) * 2011-04-12 2012-03-01 Dingten Ind Inc Vertical type high temperature and high pressure furnace structure
CN103088409B (zh) * 2013-01-31 2015-03-25 中国科学院上海技术物理研究所 一种垂直提拉生长碲锌镉单晶的装置和方法
CN107059132B (zh) * 2017-03-29 2024-02-27 磐石创新(江苏)电子装备有限公司 一种碲锌镉单晶的生长方法
DE102017217022A1 (de) 2017-09-26 2019-03-28 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung von Kristallmaterialien
US11608569B2 (en) 2020-02-28 2023-03-21 Axt, Inc. Low etch pit density, low slip line density, and low strain indium phosphide
CN114525590B (zh) * 2022-01-26 2023-03-24 深圳先进电子材料国际创新研究院 一种多功能晶体生长装置
CN114808107B (zh) * 2022-03-31 2024-01-12 威科赛乐微电子股份有限公司 一种晶体生长单晶炉、坩埚及晶体生长方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4946544A (en) * 1989-02-27 1990-08-07 At&T Bell Laboratories Crystal growth method
US5123996A (en) * 1991-01-28 1992-06-23 At&T Bell Laboratories Crystal growth method and apparatus
US5342475A (en) 1991-06-07 1994-08-30 The Furukawa Electric Co., Ltd. Method of growing single crystal of compound semiconductor
JP2814796B2 (ja) 1991-11-06 1998-10-27 日立電線株式会社 単結晶の製造方法及びその装置
JPH06345581A (ja) 1993-06-04 1994-12-20 Japan Energy Corp 多元系化合物混晶単結晶の製造方法
JP2985040B2 (ja) 1994-04-15 1999-11-29 昭和電工株式会社 単結晶製造装置及び製造方法
US5698029A (en) * 1995-06-06 1997-12-16 Kabushiki Kaisha Kobe Sekio Sho Vertical furnace for the growth of single crystals
JP3806791B2 (ja) 1996-07-18 2006-08-09 日鉱金属株式会社 化合物半導体単結晶の製造方法

Also Published As

Publication number Publication date
EP0992618A4 (de) 2005-09-07
DE69942919D1 (de) 2010-12-16
EP0992618A1 (de) 2000-04-12
EP0992618B1 (de) 2007-01-03
US6334897B1 (en) 2002-01-01
EP1571240A3 (de) 2008-03-26
EP1571240A2 (de) 2005-09-07
EP1571240B1 (de) 2010-11-03
DE69934643T2 (de) 2007-10-25
WO1999050481A1 (fr) 1999-10-07

Similar Documents

Publication Publication Date Title
DE60131649D1 (de) Verfahren zur herstellung eines kristalls
DE60039268D1 (de) Verfahren zur Herstellung eines TFT
DE60023415D1 (de) Verfahren zur Herstellung eines Polarisationsbeugungsfilms
DE59900525D1 (de) Verfahren zur Herstellung eines Einkristalls
DE69934643D1 (de) Verfahren zur herstellung eines einkristalls mit halbleitender zusammensetzung
DE69916177D1 (de) Verfahren zur Herstellung eines Siliziumkarbid-Einkristalls
DE69841475D1 (de) Verfahren zur Herstellung eines MOSFET
DE19782019T1 (de) Verfahren zur Herstellung eines Lithiumsalzes
DE60019935D1 (de) Verfahren zur herstellung eines grundschmieröls
DE69919742D1 (de) Verfahren zur herstellung eines bauteiles
DE69807892T2 (de) Verfahren zur herstellung eines durchbrochenen artikels zur wiederbeschichtung
DE69935784D1 (de) Verfahren zur herstellung eines geformten faserprodukts
DE69902242D1 (de) Verfahren zur herstellung eines brotaufstrichs
DE69938510D1 (de) Verfahren zur herstellung eines einkristallsiliziumkarbids
DE69925721D1 (de) Verfahren zur herstellung eines geschützten 4-aminomethyl-pyrrolidin-3-ons
DE50001155D1 (de) Verfahren zur Herstellung eines Stutzens
DE69514465D1 (de) Verfahren zur Herstellung eines farbigen Bildes
DE69921914D1 (de) Verfahren zur herstellung eines uhrengehäuses
DE60005985D1 (de) Verfahren zur herstellung eines silizium-einkristalles mit einem gleichmässigen zeittemperaturverlauf
DE69810815T2 (de) Verfahren zur herstellung eines ketimins
DE69603335T2 (de) Verfahren zur Herstellung eines Kautschukzusammensetzung
DE60000033T2 (de) Verfahren zur Herstellung eines Sol-Gel-Artikels
DE60042613D1 (de) Verfahren zur herstellung eines polyacetalcopolymers
DE69907854D1 (de) Verfahren zur Herstellung eines Entfeuchtungselements
DE69812875T2 (de) Verfahren zur Herstellung eines Glasbehälters und gemäß diesem Verfahren erhaltener Behälter

Legal Events

Date Code Title Description
8381 Inventor (new situation)

Inventor name: ASAHI, TOSHIAKI, TODA, SAITAMA, JP

Inventor name: KAINOSHO, KEIJI, TODA, SAITAMA, JP

Inventor name: NOZAKI, TATSUYA, TODA, SAITAMA, JP

Inventor name: SATO, KENJI, TODA, SAITAMA, JP

8364 No opposition during term of opposition
R082 Change of representative

Ref document number: 992618

Country of ref document: EP

Representative=s name: GRUENECKER, KINKELDEY, STOCKMAIR & SCHWANHAEUSSER,