DE69312582D1 - Verfahren zur Herstellung eines Metalloxid-Kristalls - Google Patents

Verfahren zur Herstellung eines Metalloxid-Kristalls

Info

Publication number
DE69312582D1
DE69312582D1 DE69312582T DE69312582T DE69312582D1 DE 69312582 D1 DE69312582 D1 DE 69312582D1 DE 69312582 T DE69312582 T DE 69312582T DE 69312582 T DE69312582 T DE 69312582T DE 69312582 D1 DE69312582 D1 DE 69312582D1
Authority
DE
Germany
Prior art keywords
producing
metal oxide
oxide crystal
crystal
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69312582T
Other languages
English (en)
Other versions
DE69312582T2 (de
Inventor
Yasuji Yamada
Teruo Izumi
Kanshi Ohtsu
Yuichi Nakamura
Kengo Ishige
Yuh Shiohara
Minoru Tagami
Shoji Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Superconductivity Technology Cen Jp
Original Assignee
Asahi Glass Co Ltd
Kyushu Electric Power Co Inc
Railway Technical Research Institute
International Superconductivity Technology Center
IHI Corp
Sumitomo Metal Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd, Kyushu Electric Power Co Inc, Railway Technical Research Institute, International Superconductivity Technology Center, IHI Corp, Sumitomo Metal Industries Ltd filed Critical Asahi Glass Co Ltd
Application granted granted Critical
Publication of DE69312582D1 publication Critical patent/DE69312582D1/de
Publication of DE69312582T2 publication Critical patent/DE69312582T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/225—Complex oxides based on rare earth copper oxides, e.g. high T-superconductors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/729—Growing single crystal, e.g. epitaxy, bulk
DE69312582T 1992-05-25 1993-05-24 Verfahren zur Herstellung eines Metalloxid-Kristalls Expired - Lifetime DE69312582T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP13256392 1992-05-25
JP4235616A JP2740427B2 (ja) 1992-05-25 1992-09-03 酸化物結晶の作製方法

Publications (2)

Publication Number Publication Date
DE69312582D1 true DE69312582D1 (de) 1997-09-04
DE69312582T2 DE69312582T2 (de) 1998-01-08

Family

ID=26467107

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69312582T Expired - Lifetime DE69312582T2 (de) 1992-05-25 1993-05-24 Verfahren zur Herstellung eines Metalloxid-Kristalls

Country Status (4)

Country Link
US (1) US5407907A (de)
EP (1) EP0573193B1 (de)
JP (1) JP2740427B2 (de)
DE (1) DE69312582T2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3008970B2 (ja) * 1993-07-27 2000-02-14 財団法人国際超電導産業技術研究センター Ｙ１２３型結晶構造を有する酸化物結晶膜
US5602081A (en) * 1993-05-10 1997-02-11 International Superconductivity Technology Center Method of preparing metal oxide crystal
JPH06321695A (ja) * 1993-05-10 1994-11-22 Kokusai Chodendo Sangyo Gijutsu Kenkyu Center Ｙ１２３型結晶構造を有する酸化物結晶膜及び膜積層体
JP2963604B2 (ja) * 1993-07-27 1999-10-18 財団法人国際超電導産業技術研究センター ＲｅＢａ２Ｃｕ３Ｏｙ結晶を融液から作製する方法
JP3234711B2 (ja) * 1994-04-14 2001-12-04 住友電気工業株式会社 酸化物の融液保持方法および酸化物結晶の作製方法
EP0793850A4 (de) * 1995-01-12 1998-08-19 Univ Chicago Material des typs 123 mit grosser einzeldomaine hergestellt durch impfen von seltenerdbariumkupferoxideinkristallen mit einkristallen
US5932002A (en) * 1997-08-28 1999-08-03 Sumitomo Sitix Corporation Seed crystals for pulling a single crystal and methods using the same
US6740620B2 (en) 2001-04-25 2004-05-25 Rohn And Haas Company Single crystalline phase catalyst
FR2876919B1 (fr) 2004-10-26 2007-07-27 Millipore Corp Aiguille de maintien comportant des joues de prehension.
DE102005003407B4 (de) * 2005-01-25 2010-05-06 Karlsruher Institut für Technologie Verfahren zur Herstellung von Kolloid-Kristallen oder Kolloid-Partikelsystemen

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1587249A (en) * 1976-08-05 1981-04-01 Alusuisse Growing of crystals
US4545849A (en) * 1983-03-03 1985-10-08 Motorola Inc. Method for control of oxygen in silicon crystals
JPS61106496A (ja) * 1984-10-31 1986-05-24 Hoya Corp 分解溶融化合物単結晶の製造方法
JPS6389487A (ja) * 1986-10-01 1988-04-20 Hitachi Metals Ltd 酸化物単結晶の製造方法
JPS63242997A (ja) * 1987-03-31 1988-10-07 Sumitomo Electric Ind Ltd セラミツクス超電導材料の製造方法
US4956334A (en) * 1987-05-01 1990-09-11 Agency Of Industrial Science And Technology Method for preparing a single crystal of lanthanum cuprate
JPS63310799A (ja) * 1987-06-11 1988-12-19 Toshiba Corp 酸化物超電導結晶の製造方法
JP2707499B2 (ja) * 1987-11-26 1998-01-28 住友電気工業株式会社 酸化物超電導体の製造方法
JP2684432B2 (ja) * 1988-12-29 1997-12-03 弘直 兒嶋 超電導酸化物の単結晶及びその製造方法
JPH03193693A (ja) * 1989-12-21 1991-08-23 Sumitomo Electric Ind Ltd 化合物半導体混晶の成長方法

Also Published As

Publication number Publication date
EP0573193A1 (de) 1993-12-08
US5407907A (en) 1995-04-18
JP2740427B2 (ja) 1998-04-15
DE69312582T2 (de) 1998-01-08
JPH06122588A (ja) 1994-05-06
EP0573193B1 (de) 1997-07-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NEW ENERGY AND INDUSTRIAL DEVELOPMENT ORGANIZATION

Owner name: INTERNATIONAL SUPERCONDUCTIVITY TECHNOLOGY CENTER,

Owner name: ASAHI GLASS CO., LTD., TOKIO/TOKYO, JP

Owner name: ISHIKAWAJIMA-HARIMA HEAVY INDUSTRIES CO., LTD., TO

Owner name: SUMITOMO METAL INDUSTRIES, LTD., OSAKA, JP

Owner name: RAILWAY TECHNICAL RESEARCH INSTITUTE, KOKUBUNJI, T

Owner name: KYUSHU ELECTRIC POWER CO., INC., FUKUOKA, JP

8327 Change in the person/name/address of the patent owner

Owner name: INTERNATIONAL SUPERCONDUCTIVITY TECHNOLOGY CEN, JP