DE69506600T2 - Verfahren und Tiegel zur Herstellung eines Verbundhalbleiter-Kristalles - Google Patents

Verfahren und Tiegel zur Herstellung eines Verbundhalbleiter-Kristalles

Info

Publication number
DE69506600T2
DE69506600T2 DE69506600T DE69506600T DE69506600T2 DE 69506600 T2 DE69506600 T2 DE 69506600T2 DE 69506600 T DE69506600 T DE 69506600T DE 69506600 T DE69506600 T DE 69506600T DE 69506600 T2 DE69506600 T2 DE 69506600T2
Authority
DE
Germany
Prior art keywords
crucible
producing
compound semiconductor
semiconductor crystal
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69506600T
Other languages
English (en)
Other versions
DE69506600D1 (de
Inventor
Tomohiro Kawase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Application granted granted Critical
Publication of DE69506600D1 publication Critical patent/DE69506600D1/de
Publication of DE69506600T2 publication Critical patent/DE69506600T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/42—Gallium arsenide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE69506600T 1994-03-11 1995-03-09 Verfahren und Tiegel zur Herstellung eines Verbundhalbleiter-Kristalles Expired - Lifetime DE69506600T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4072494 1994-03-11

Publications (2)

Publication Number Publication Date
DE69506600D1 DE69506600D1 (de) 1999-01-28
DE69506600T2 true DE69506600T2 (de) 1999-05-06

Family

ID=12588564

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69506600T Expired - Lifetime DE69506600T2 (de) 1994-03-11 1995-03-09 Verfahren und Tiegel zur Herstellung eines Verbundhalbleiter-Kristalles

Country Status (3)

Country Link
US (2) US5584929A (de)
EP (1) EP0671490B1 (de)
DE (1) DE69506600T2 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69609568T2 (de) * 1995-05-26 2001-02-01 Sumitomo Electric Industries Verfahren zur Herstellung von einem II-VI oder III-V Halbleitereinkristall
US5911824A (en) * 1997-12-16 1999-06-15 Saint-Gobain Industrial Ceramics, Inc. Method for growing crystal
DE19912486A1 (de) * 1999-03-19 2000-09-28 Freiberger Compound Mat Gmbh Verfahren und Vorrichtung zur Herstellung von Einkristallen sowie Kristallkeim
US6592663B1 (en) * 1999-06-09 2003-07-15 Ricoh Company Ltd. Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate
FR2822853B1 (fr) * 2001-03-29 2003-06-27 Corning Inc Preaparation de (mono) cristaux
US20040077563A1 (en) * 2001-08-21 2004-04-22 Johnson Lau Methods of drug delivery to hepatocytes and treatment of flaviviridae infections
KR100889758B1 (ko) * 2002-09-03 2009-03-20 삼성모바일디스플레이주식회사 유기박막 형성장치의 가열용기
WO2005003413A1 (ja) * 2003-07-03 2005-01-13 Hitachi Chemical Co., Ltd. ルツボ及びルツボを用いた単結晶の育成方法
WO2005103341A1 (ja) * 2004-04-27 2005-11-03 Matsushita Electric Industrial Co., Ltd. Iii族元素窒化物結晶製造装置およびiii族元素窒化物結晶製造方法
US8361225B2 (en) 2007-05-09 2013-01-29 Axt, Inc. Low etch pit density (EPD) semi-insulating III-V wafers
US7566641B2 (en) * 2007-05-09 2009-07-28 Axt, Inc. Low etch pit density (EPD) semi-insulating GaAs wafers
US9797068B2 (en) * 2010-03-29 2017-10-24 Sumitomo Electric Industries, Ltd. Method of producing semiconductor single crystal
US10724148B2 (en) * 2014-01-21 2020-07-28 Infineon Technologies Ag Silicon ingot and method of manufacturing a silicon ingot
US10337117B2 (en) 2014-11-07 2019-07-02 Infineon Technologies Ag Method of manufacturing a silicon ingot and silicon ingot
CN109628910B (zh) * 2017-10-07 2023-06-30 株式会社Flosfia 形成膜的方法
CN108396388B (zh) * 2018-04-28 2023-10-03 广东长信精密设备有限公司 立式烘烤氧化系统
CN108517565B (zh) * 2018-04-28 2023-12-01 广东长信精密设备有限公司 坩埚处理系统
CN111763988B (zh) * 2020-07-09 2021-12-14 进化半导体(深圳)有限公司 一种铟砷锑多晶原料的合成方法
CN113213970A (zh) * 2021-04-20 2021-08-06 广东先导微电子科技有限公司 一种pbn坩埚氧化硼润湿装置、方法及其应用

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE759405A (fr) * 1969-11-26 1971-05-25 Wacker Chemitronic Utilisation de recipients en quartz proteges par des substancesinertes pour la preparation de semi-conducteurs
JPS5512380B2 (de) * 1972-08-25 1980-04-01
US3928096A (en) * 1974-01-07 1975-12-23 Owens Illinois Inc Boron doping of semiconductors
CA1222436A (en) * 1982-08-23 1987-06-02 Franz T. Geyling Process for growing crystalline material
JPS60191094A (ja) * 1984-03-08 1985-09-28 Hitachi Cable Ltd Ｂνルツボの前処理方法
JPH0723471B2 (ja) * 1985-08-13 1995-03-15 ダイセル化学工業株式会社 コレステリツク液晶組成物
GB2183501A (en) * 1985-11-15 1987-06-10 Kollmorgen Tech Corp Horizontal bridgman crystal growth
JPH01290589A (ja) * 1988-05-19 1989-11-22 Sumitomo Electric Ind Ltd 化合物半導体単結晶育成用二重るつぼ
JPH0244798A (ja) * 1988-08-05 1990-02-14 Matsushita Electric Works Ltd 多層配線基板の製造方法
US4923561A (en) * 1988-09-23 1990-05-08 American Telephone And Telegraph Company Crystal growth method
US4999082A (en) * 1989-09-14 1991-03-12 Akzo America Inc. Process for producing monocrystalline group II-IV or group III-V compounds and products thereof
JP2917437B2 (ja) * 1990-06-29 1999-07-12 大同特殊鋼株式会社 バナジウムおよびその化合物の溶解用るつぼ
US5131975A (en) * 1990-07-10 1992-07-21 The Regents Of The University Of California Controlled growth of semiconductor crystals
JP3216298B2 (ja) * 1993-02-17 2001-10-09 住友電気工業株式会社 化合物半導体結晶成長用縦型容器

Also Published As

Publication number Publication date
EP0671490B1 (de) 1998-12-16
US5584929A (en) 1996-12-17
EP0671490A1 (de) 1995-09-13
US5656077A (en) 1997-08-12
DE69506600D1 (de) 1999-01-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: GROSSE, BOCKHORNI, SCHUMACHER, 81476 MUENCHEN

8328 Change in the person/name/address of the agent

Representative=s name: BOCKHORNI & KOLLEGEN, 80687 MUENCHEN