FR2388413A1 - Procede de commande de la migration d'une espece chimique dans un substrat solide - Google Patents
Procede de commande de la migration d'une espece chimique dans un substrat solideInfo
- Publication number
- FR2388413A1 FR2388413A1 FR7711569A FR7711569A FR2388413A1 FR 2388413 A1 FR2388413 A1 FR 2388413A1 FR 7711569 A FR7711569 A FR 7711569A FR 7711569 A FR7711569 A FR 7711569A FR 2388413 A1 FR2388413 A1 FR 2388413A1
- Authority
- FR
- France
- Prior art keywords
- migration
- substrate
- chemical species
- solid substrate
- control
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/326—Application of electric currents or fields, e.g. for electroforming
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- High Energy & Nuclear Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
L'invention a pour objet un procédé de commande de la migration d'une espèce chimique dans un substrat solide. Selon l'invention, on irradie le substrat avec des particules dont l'énergie est suffisante pour qu'elles pénètrent dans le substrat et y engendrent des ions négatifs excités métastables et en ce qu'on applique audit substrat un champ électrique de sens opposé au sens de migration souhaité. Application en technologie des semi-conducteurs, notamment à leur purification.
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7711569A FR2388413A1 (fr) | 1977-04-18 | 1977-04-18 | Procede de commande de la migration d'une espece chimique dans un substrat solide |
GB13925/78A GB1580879A (en) | 1977-04-18 | 1978-04-10 | Method for controlling the migration of an electronegative chemical species within a solid substrate |
US05/895,382 US4193003A (en) | 1977-04-18 | 1978-04-11 | Method for controlling the migration of a chemical species within a solid substrate |
DE2816517A DE2816517C3 (de) | 1977-04-18 | 1978-04-17 | Verfahren zur Änderung der Konzentration eines Fremdstoffes in einem Festkörper |
NL7804102A NL7804102A (nl) | 1977-04-18 | 1978-04-18 | Werkwijze voor het besturen van de migratie van een chemische stof in een vast substraat. |
JP4583378A JPS5416176A (en) | 1977-04-18 | 1978-04-18 | Method of controlling movement of chemical particles in solid base layer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7711569A FR2388413A1 (fr) | 1977-04-18 | 1977-04-18 | Procede de commande de la migration d'une espece chimique dans un substrat solide |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2388413A1 true FR2388413A1 (fr) | 1978-11-17 |
FR2388413B1 FR2388413B1 (fr) | 1981-12-31 |
Family
ID=9189528
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7711569A Granted FR2388413A1 (fr) | 1977-04-18 | 1977-04-18 | Procede de commande de la migration d'une espece chimique dans un substrat solide |
Country Status (6)
Country | Link |
---|---|
US (1) | US4193003A (fr) |
JP (1) | JPS5416176A (fr) |
DE (1) | DE2816517C3 (fr) |
FR (1) | FR2388413A1 (fr) |
GB (1) | GB1580879A (fr) |
NL (1) | NL7804102A (fr) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0190605A2 (fr) * | 1985-01-31 | 1986-08-13 | Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. | Procédé de changement local de la composition atomique de corps solides, en particulier de semi-conducteurs |
EP0398216A2 (fr) * | 1989-05-16 | 1990-11-22 | Fujitsu Limited | Piégeage d'impuretés constituées de métaux lourds |
EP0405832A1 (fr) * | 1989-06-30 | 1991-01-02 | AT&T Corp. | Procédés de dopage pour composants semi-conducteurs |
WO1996026536A1 (fr) * | 1995-02-20 | 1996-08-29 | Rohm Co., Ltd. | Dispositif a semiconducteur dote d'un cristal a defauts, et son procede de fabrication |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2461359A1 (fr) * | 1979-07-06 | 1981-01-30 | Commissariat Energie Atomique | Procede et appareil d'hydrogenation de dispositifs a semi-conducteurs |
US4861991A (en) * | 1988-09-30 | 1989-08-29 | Siemens Corporate Research & Support, Inc. | Electron storage source for electron beam testers |
US5103102A (en) * | 1989-02-24 | 1992-04-07 | Micrion Corporation | Localized vacuum apparatus and method |
US5454885A (en) * | 1993-12-21 | 1995-10-03 | Martin Marietta Corporation | Method of purifying substrate from unwanted heavy metals |
US6136669A (en) * | 1998-07-21 | 2000-10-24 | International Business Machines Corporation | Mobile charge immune process |
US9689068B2 (en) * | 2014-05-16 | 2017-06-27 | Nanoedit, Llc | Deposition and patterning using emitted electrons |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3539401A (en) * | 1966-05-25 | 1970-11-10 | Matsushita Electric Ind Co Ltd | Method of manufacturing mechano-electrical transducer |
US3498852A (en) * | 1969-03-10 | 1970-03-03 | Atomic Energy Commission | Accelerating lithium drifting in germanium |
US3725148A (en) * | 1970-08-31 | 1973-04-03 | D Kendall | Individual device tuning using localized solid-state reactions |
-
1977
- 1977-04-18 FR FR7711569A patent/FR2388413A1/fr active Granted
-
1978
- 1978-04-10 GB GB13925/78A patent/GB1580879A/en not_active Expired
- 1978-04-11 US US05/895,382 patent/US4193003A/en not_active Expired - Lifetime
- 1978-04-17 DE DE2816517A patent/DE2816517C3/de not_active Expired
- 1978-04-18 JP JP4583378A patent/JPS5416176A/ja active Pending
- 1978-04-18 NL NL7804102A patent/NL7804102A/xx not_active Application Discontinuation
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0190605A2 (fr) * | 1985-01-31 | 1986-08-13 | Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. | Procédé de changement local de la composition atomique de corps solides, en particulier de semi-conducteurs |
EP0190605A3 (fr) * | 1985-01-31 | 1989-07-12 | Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. | Procédé de changement local de la composition atomique de corps solides, en particulier de semi-conducteurs |
EP0398216A2 (fr) * | 1989-05-16 | 1990-11-22 | Fujitsu Limited | Piégeage d'impuretés constituées de métaux lourds |
EP0398216A3 (fr) * | 1989-05-16 | 1991-01-02 | Fujitsu Limited | Piégeage d'impuretés constituées de métaux lourds |
EP0405832A1 (fr) * | 1989-06-30 | 1991-01-02 | AT&T Corp. | Procédés de dopage pour composants semi-conducteurs |
US5024967A (en) * | 1989-06-30 | 1991-06-18 | At&T Bell Laboratories | Doping procedures for semiconductor devices |
WO1996026536A1 (fr) * | 1995-02-20 | 1996-08-29 | Rohm Co., Ltd. | Dispositif a semiconducteur dote d'un cristal a defauts, et son procede de fabrication |
Also Published As
Publication number | Publication date |
---|---|
GB1580879A (en) | 1980-12-10 |
DE2816517B2 (de) | 1980-05-14 |
NL7804102A (nl) | 1978-10-20 |
US4193003A (en) | 1980-03-11 |
FR2388413B1 (fr) | 1981-12-31 |
DE2816517A1 (de) | 1978-10-26 |
JPS5416176A (en) | 1979-02-06 |
DE2816517C3 (de) | 1981-01-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |