JPS5374386A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5374386A
JPS5374386A JP14971876A JP14971876A JPS5374386A JP S5374386 A JPS5374386 A JP S5374386A JP 14971876 A JP14971876 A JP 14971876A JP 14971876 A JP14971876 A JP 14971876A JP S5374386 A JPS5374386 A JP S5374386A
Authority
JP
Japan
Prior art keywords
substrate
semiconductor device
contact
fet
comb
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14971876A
Other languages
Japanese (ja)
Other versions
JPS6029231B2 (en
Inventor
Takeaki Okabe
Isao Yoshida
Mineo Katsueda
Shikayuki Ochi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP14971876A priority Critical patent/JPS6029231B2/en
Publication of JPS5374386A publication Critical patent/JPS5374386A/en
Publication of JPS6029231B2 publication Critical patent/JPS6029231B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To reduce the variation of the substrate potential caused by the fluctuation of the substrate current and thus to obtain a stabilized FET, by forming the source region into a comb-tooth shape and by arranging the source contact and the substrate contact alternately and repeatedly.
COPYRIGHT: (C)1978,JPO&Japio
JP14971876A 1976-12-15 1976-12-15 semiconductor equipment Expired JPS6029231B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14971876A JPS6029231B2 (en) 1976-12-15 1976-12-15 semiconductor equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14971876A JPS6029231B2 (en) 1976-12-15 1976-12-15 semiconductor equipment

Publications (2)

Publication Number Publication Date
JPS5374386A true JPS5374386A (en) 1978-07-01
JPS6029231B2 JPS6029231B2 (en) 1985-07-09

Family

ID=15481295

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14971876A Expired JPS6029231B2 (en) 1976-12-15 1976-12-15 semiconductor equipment

Country Status (1)

Country Link
JP (1) JPS6029231B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4376286A (en) * 1978-10-13 1983-03-08 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US4959699A (en) * 1978-10-13 1990-09-25 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US6046473A (en) * 1995-06-07 2000-04-04 Stmicroelectronics, Inc. Structure and process for reducing the on-resistance of MOS-gated power devices

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0550320U (en) * 1991-12-09 1993-07-02 横河電機株式会社 Flow rate measuring device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4376286A (en) * 1978-10-13 1983-03-08 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US4959699A (en) * 1978-10-13 1990-09-25 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US5191396A (en) * 1978-10-13 1993-03-02 International Rectifier Corp. High power mosfet with low on-resistance and high breakdown voltage
US5338961A (en) * 1978-10-13 1994-08-16 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US5598018A (en) * 1978-10-13 1997-01-28 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US5742087A (en) * 1978-10-13 1998-04-21 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US6046473A (en) * 1995-06-07 2000-04-04 Stmicroelectronics, Inc. Structure and process for reducing the on-resistance of MOS-gated power devices

Also Published As

Publication number Publication date
JPS6029231B2 (en) 1985-07-09

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