JPS5374386A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5374386A JPS5374386A JP14971876A JP14971876A JPS5374386A JP S5374386 A JPS5374386 A JP S5374386A JP 14971876 A JP14971876 A JP 14971876A JP 14971876 A JP14971876 A JP 14971876A JP S5374386 A JPS5374386 A JP S5374386A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- semiconductor device
- contact
- fet
- comb
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To reduce the variation of the substrate potential caused by the fluctuation of the substrate current and thus to obtain a stabilized FET, by forming the source region into a comb-tooth shape and by arranging the source contact and the substrate contact alternately and repeatedly.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14971876A JPS6029231B2 (en) | 1976-12-15 | 1976-12-15 | semiconductor equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14971876A JPS6029231B2 (en) | 1976-12-15 | 1976-12-15 | semiconductor equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5374386A true JPS5374386A (en) | 1978-07-01 |
JPS6029231B2 JPS6029231B2 (en) | 1985-07-09 |
Family
ID=15481295
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14971876A Expired JPS6029231B2 (en) | 1976-12-15 | 1976-12-15 | semiconductor equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6029231B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4376286A (en) * | 1978-10-13 | 1983-03-08 | International Rectifier Corporation | High power MOSFET with low on-resistance and high breakdown voltage |
US4959699A (en) * | 1978-10-13 | 1990-09-25 | International Rectifier Corporation | High power MOSFET with low on-resistance and high breakdown voltage |
US6046473A (en) * | 1995-06-07 | 2000-04-04 | Stmicroelectronics, Inc. | Structure and process for reducing the on-resistance of MOS-gated power devices |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0550320U (en) * | 1991-12-09 | 1993-07-02 | 横河電機株式会社 | Flow rate measuring device |
-
1976
- 1976-12-15 JP JP14971876A patent/JPS6029231B2/en not_active Expired
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4376286A (en) * | 1978-10-13 | 1983-03-08 | International Rectifier Corporation | High power MOSFET with low on-resistance and high breakdown voltage |
US4959699A (en) * | 1978-10-13 | 1990-09-25 | International Rectifier Corporation | High power MOSFET with low on-resistance and high breakdown voltage |
US5191396A (en) * | 1978-10-13 | 1993-03-02 | International Rectifier Corp. | High power mosfet with low on-resistance and high breakdown voltage |
US5338961A (en) * | 1978-10-13 | 1994-08-16 | International Rectifier Corporation | High power MOSFET with low on-resistance and high breakdown voltage |
US5598018A (en) * | 1978-10-13 | 1997-01-28 | International Rectifier Corporation | High power MOSFET with low on-resistance and high breakdown voltage |
US5742087A (en) * | 1978-10-13 | 1998-04-21 | International Rectifier Corporation | High power MOSFET with low on-resistance and high breakdown voltage |
US6046473A (en) * | 1995-06-07 | 2000-04-04 | Stmicroelectronics, Inc. | Structure and process for reducing the on-resistance of MOS-gated power devices |
Also Published As
Publication number | Publication date |
---|---|
JPS6029231B2 (en) | 1985-07-09 |
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