DE69636404D1 - Verfahren zur Herstellung einer photoelektrischen Umwandlungsvorrichtung - Google Patents

Verfahren zur Herstellung einer photoelektrischen Umwandlungsvorrichtung

Info

Publication number
DE69636404D1
DE69636404D1 DE69636404T DE69636404T DE69636404D1 DE 69636404 D1 DE69636404 D1 DE 69636404D1 DE 69636404 T DE69636404 T DE 69636404T DE 69636404 T DE69636404 T DE 69636404T DE 69636404 D1 DE69636404 D1 DE 69636404D1
Authority
DE
Germany
Prior art keywords
manufacturing
photoelectric conversion
conversion device
photoelectric
conversion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69636404T
Other languages
English (en)
Other versions
DE69636404T2 (de
Inventor
Shinichi Hayashi
Akira Funakoshi
Akira Tago
Satoshi Okada
Shinichi Takeda
Eiichi Takami
Masakazu Morishita
Chiori Mochizuki
Tadao Endo
Toshikazu Tamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69636404D1 publication Critical patent/DE69636404D1/de
Publication of DE69636404T2 publication Critical patent/DE69636404T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14618—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14634—Assemblies, i.e. Hybrid structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02322—Optical elements or arrangements associated with the device comprising luminescent members, e.g. fluorescent sheets upon the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14665—Imagers using a photoconductor layer
    • H01L27/14676—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10—Methods of surface bonding and/or assembly therefor
    • Y10T156/1052—Methods of surface bonding and/or assembly therefor with cutting, punching, tearing or severing
    • Y10T156/1062—Prior to assembly
    • Y10T156/1075—Prior to assembly of plural laminae from single stock and assembling to each other or to additional lamina
    • Y10T156/1077—Applying plural cut laminae to single face of additional lamina
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10—Methods of surface bonding and/or assembly therefor
    • Y10T156/1089—Methods of surface bonding and/or assembly therefor of discrete laminae to single face of additional lamina
    • Y10T156/1092—All laminae planar and face to face

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Facsimile Heads (AREA)
  • Facsimile Scanning Arrangements (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
DE69636404T 1995-10-20 1996-10-18 Verfahren zur Herstellung einer photoelektrischen Umwandlungsvorrichtung Expired - Lifetime DE69636404T2 (de)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP27299795 1995-10-20
JP27299795 1995-10-20
JP732496 1996-01-19
JP732496 1996-01-19
JP26713896 1996-10-08
JP26713896A JP3805031B2 (ja) 1995-10-20 1996-10-08 光電変換装置

Publications (2)

Publication Number Publication Date
DE69636404D1 true DE69636404D1 (de) 2006-09-14
DE69636404T2 DE69636404T2 (de) 2007-02-01

Family

ID=27277562

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69637881T Expired - Lifetime DE69637881D1 (de) 1995-10-20 1996-10-18 Photoelektrische Umwandlungsvorrichtung und Herstellungsverfahren dazu
DE69636404T Expired - Lifetime DE69636404T2 (de) 1995-10-20 1996-10-18 Verfahren zur Herstellung einer photoelektrischen Umwandlungsvorrichtung

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE69637881T Expired - Lifetime DE69637881D1 (de) 1995-10-20 1996-10-18 Photoelektrische Umwandlungsvorrichtung und Herstellungsverfahren dazu

Country Status (5)

Country Link
US (2) US5856699A (de)
EP (2) EP0769817B1 (de)
JP (1) JP3805031B2 (de)
DE (2) DE69637881D1 (de)
TW (1) TW402817B (de)

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GB9925227D0 (en) 1999-10-25 1999-12-22 Internet Limited Data storage retrieval and access system
JP4293584B2 (ja) 2000-02-25 2009-07-08 浜松ホトニクス株式会社 Ｘ線像撮像装置及びその製造方法
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JP2001264442A (ja) * 2000-03-22 2001-09-26 Fuji Photo Film Co Ltd 画像記録媒体
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US6855935B2 (en) 2000-03-31 2005-02-15 Canon Kabushiki Kaisha Electromagnetic wave detector
JP2003168794A (ja) * 2001-11-30 2003-06-13 Canon Inc 放射線検出素子、放射線撮像装置、放射線検出方法、及び放射線撮像方法
US6953934B2 (en) * 2002-03-06 2005-10-11 Canon Kabushiki Kaisha Radiation detection apparatus and system
JP3722367B2 (ja) 2002-03-19 2005-11-30 ソニー株式会社 固体撮像素子の製造方法
US7127793B2 (en) * 2002-04-24 2006-10-31 Fuji Photo Film Co., Ltd. Method of producing solid state pickup device
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JPWO2006112320A1 (ja) * 2005-04-15 2008-12-11 株式会社日立メディコ Ｘ線平面検出器及びｘ線画像診断装置
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JP4871629B2 (ja) * 2006-04-12 2012-02-08 キヤノン株式会社 放射線撮像装置の製造方法及び放射線撮像システム
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DE102006038969B4 (de) * 2006-08-21 2013-02-28 Siemens Aktiengesellschaft Röntgenkonverterelement und Verfahren zu dessen Herstellung
DE102007027207A1 (de) * 2006-10-21 2008-04-24 Sunzenit Gmbh Photovoltaikmodul mit Kühleinrichtung
CN101389979A (zh) 2006-12-27 2009-03-18 株式会社东芝 射线检测器
JP5004848B2 (ja) * 2007-04-18 2012-08-22 キヤノン株式会社 放射線検出装置及び放射線検出システム
JP5350604B2 (ja) * 2007-05-16 2013-11-27 スパンション エルエルシー 半導体装置及びその製造方法
JP5124227B2 (ja) * 2007-10-01 2013-01-23 浜松ホトニクス株式会社 放射線検出器
WO2009133502A2 (en) * 2008-04-29 2009-11-05 Philips Intellectual Property & Standards Gmbh Photo-detector
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JP2012154696A (ja) 2011-01-24 2012-08-16 Canon Inc シンチレータパネル、放射線検出装置およびそれらの製造方法
JP5709572B2 (ja) 2011-02-18 2015-04-30 キヤノン株式会社 撮像装置および撮像システム
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Also Published As

Publication number Publication date
TW402817B (en) 2000-08-21
DE69636404T2 (de) 2007-02-01
EP1513201A2 (de) 2005-03-09
EP0769817A3 (de) 1998-04-01
EP0769817A2 (de) 1997-04-23
JPH09260626A (ja) 1997-10-03
EP1513201B1 (de) 2009-03-18
US6352875B1 (en) 2002-03-05
DE69637881D1 (de) 2009-04-30
EP0769817B1 (de) 2006-08-02
EP1513201A3 (de) 2007-03-14
JP3805031B2 (ja) 2006-08-02
US5856699A (en) 1999-01-05

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