JP2012504350A - 一体的に統合されたソーラーモジュール - Google Patents
一体的に統合されたソーラーモジュール Download PDFInfo
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- JP2012504350A JP2012504350A JP2011529358A JP2011529358A JP2012504350A JP 2012504350 A JP2012504350 A JP 2012504350A JP 2011529358 A JP2011529358 A JP 2011529358A JP 2011529358 A JP2011529358 A JP 2011529358A JP 2012504350 A JP2012504350 A JP 2012504350A
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Abstract
【選択図】なし
Description
この出願は、「一体的に統合されたソーラーモジュール」と題された2008年9月29日に提出された米国仮出願第61/101,022号(「’022出願」)に対する優先権の利益を主張する。’022出願の全開示はここで言及することによってそのまま組み込まれている。
一実施形態において、ソーラーモジュールは、基板と、電気的に相互に接続された複数の太陽電池と、上部分離ギャップとを含む。太陽電池は基板の上に提供される。少なくとも1つの太陽電池は、反射電極と、シリコン層スタックと、光透過電極とを含む。反射電極は基板の上に提供される。シリコン層スタックは、反射電極の上に提供されたnドープ層と、nドープ層の上に提供された真性層と、真性層の上に提供されたpドープ層とを含む。光透過電極はシリコン層スタックの上に提供される。上部分離ギャップは電池の間に提供される。1つの太陽電池の光透過電極が他の1つの太陽電池の反射電極に電気的に接続されるように、上部分離ギャップは、太陽電池の光透過電極を互いから電気的に分離する。
前記概要及び本発明の特定の実施形態の以下の詳細な説明は、添付図面と同時に参照することによってさらによく理解されるであろう。ここで用いられているように、単数形で列挙された、「1つの(a)」又は「1つの(an)」という単語に続く要素又はステップは、排除することが明示的に述べられていない限り、前記の要素又はステップの複数形を排除しないように理解しなければならない。更に、本発明の「一実施形態」への言及は、列挙されている特徴をさらに包含するさらなる実施形態の存在を排除するものとして解釈されるように意図されていない。さらに、そうでないことが明示的に記載されていない限り、特定の特性を有する要素又は要素の複数形を「含む(comprising)」又は「有する(having)」実施形態は、その特性を有しないそのようなさらなる要素を含んでいてもよい。レーザーを使用してシリコン太陽電池を一体的に統合するためのシステムに関して1つ以上の実施形態が記載されていても、ここに記載されている実施形態がシリコンをベースとする太陽電池又はレーザーに限定されないことに留意すべきである。特に、1つ以上の実施形態は、シリコン以外の材料を含んでいてもよく及び/又はレーザースクライブ以外のパターニング技術を使用してもよい。
Claims (26)
- 非伝導性基板と、
前記基板の上に提供された相互に電気的に接続された複数の太陽電池であって、前記太陽電池の少なくとも1つが、前記基板の上に提供された反射電極と、前記反射電極の上に提供されたnドープ層と、前記nドープ層の上に提供された真性層と、前記真性層の上に提供されたpドープ層とを含むシリコン層スタックと、前記シリコン層スタックの上に提供された光透過電極とを含む太陽電池と、
前記太陽電池の間に提供された上部分離ギャップであって、前記太陽電池の光透過電極を互いから電気的に分離する上部分離ギャップと、
を含むソーラーモジュールであって、
1つの太陽電池の光透過電極が他の1つの太陽電池の反射電極に電気的に接続されていることを特徴とするソーラーモジュール。 - 請求項1に記載のソーラーモジュールであって、前記複数の太陽電池が、電気的に直列で接続された少なくとも25個の太陽電池を含むことを特徴とするソーラーモジュール。
- 請求項1に記載のソーラーモジュールであって、前記上部分離ギャップが、前記太陽電池の光透過電極間のシリコン層スタックを暴露させることを特徴とするソーラーモジュール。
- 請求項1に記載のソーラーモジュールであって、隣接する太陽電池における反射電極と光透過電極との間の電圧差が−0.1〜0.1ボルトであるときに、分離ギャップの中において光透過電極の間に延在するシリコン層スタックの領域が、少なくとも約1000オーム*cm2の領域特異的な電気分路抵抗を有することを特徴とするソーラーモジュール。
- 請求項1に記載のソーラーモジュールであって、隣接する太陽電池における反射電極と光透過電極との間の電圧差が−0.1〜0.1ボルトであるときに、分離ギャップの中において光透過電極の間に延在するシリコン層スタックの領域が、少なくとも約500オーム*cm2の領域特異的な電気分路抵抗を有することを特徴とするソーラーモジュール。
- 請求項1に記載のソーラーモジュールであって、前記反射電極と前記シリコン層スタックとの間に提供された緩衝層をさらに含むことを特徴とするソーラーモジュール。
- 請求項1に記載のソーラーモジュールであって、前記電池の間に提供された下部分離ギャップをさらに含み、前記下部分離ギャップが太陽電池の反射電極を互いから電気的に分離することを特徴とするソーラーモジュール。
- 請求項1に記載のソーラーモジュールであって、前記シリコン層スタックが微晶質のシリコン層スタックとして提供されることを特徴とするソーラーモジュール。
- 請求項1に記載のソーラーモジュールであって、前記シリコン層スタックが、nドープ層と、真性層と、pドープ層との底部層スタックを含み、前記シリコン層スタックが、前記底部層スタックの上に提供された頂部層スタックをさらに含み、前記頂部層スタックが、頂部スタックnドープ層と、前記頂部スタックnドープ層の上に提供された頂部スタック真性層と、前記頂部スタック真性層の上に提供された頂部スタックpドープ層とを含むことを特徴とするソーラーモジュール。
- 請求項9に記載のソーラーモジュールであって、前記底部層スタックと前記頂部層スタックとの間に配置された中間層をさらに含み、前記中間層が、入射光を少なくとも部分的に前記頂部層スタックの方へ反射することを特徴とするソーラーモジュール。
- 請求項9に記載のソーラーモジュールであって、前記底部層スタックの真性層が約2.5原子パーセント以下の含有量のSiH2を有する非晶質の真性層であることを特徴とするソーラーモジュール。
- 請求項1に記載のソーラーモジュールであって、前記真性層が約2.5原子パーセント以下の含有量のSiH2を有することを特徴とするソーラーモジュール。
- 請求項1に記載のソーラーモジュールであって、前記太陽電池の間に提供されたシリコン層間ギャップをさらに含み、前記シリコン層間ギャップが、隣接する太陽電池の光透過電極を分離し、前記シリコン層間ギャップが、円形の除去マークの実質的な一次直線を有するレーザースクライブラインを含むことを特徴とするソーラーモジュール。
- 相互に電気的に接続された複数の太陽電池を有するソーラーモジュールを製造する方法であって、
基板と、反射電極と、シリコン層スタックと、光透過電極とを提供するステップであって、前記シリコン層スタックが、前記反射電極の上に提供されたnドープ層と、前記nドープ層の上に提供された真性層と、前記真性層の上に提供されたpドープ層とを含むステップと、
太陽電池の光透過電極を互いから電気的に分離するために光透過電極の一部分を除去するステップであって、前記一部分が、ソーラーモジュールの前記基板の反対側から前記光透過電極をパターニング技術に暴露させることによって除去されるステップと、
を含むことを特徴とする方法。 - 請求項14に記載の方法であって、前記パターニング技術がレーザー光を含むことを特徴とする方法。
- 請求項14に記載の方法であって、前記パターニング技術が、約1000ピコ秒以下の持続時間でパルス化されたレーザー光を含むことを特徴とする方法。
- 請求項14に記載の方法であって、前記パターニング技術が、約30ナノ秒以下の持続時間でパルス化されたレーザー光を含むことを特徴とする方法。
- 請求項14に記載の方法であって、前記光透過電極の一部分を除去するステップによって太陽電池間のシリコン層スタックの領域を暴露させ、前記暴露された領域は、隣接する太陽電池における反射電極と光透過電極との間の電圧差が−0.1〜0.1ボルトであるときに、少なくとも約1000オーム*cm2の領域特異的電気抵抗を有することを特徴とする方法。
- 請求項14に記載の方法であって、前記光透過電極の一部分を除去するステップによって太陽電池間のシリコン層スタックの領域を暴露させ、前記暴露された領域は、隣接する太陽電池における反射電極と光透過電極との間の電圧差が−0.1〜0.1ボルトであるときに、少なくとも約500オーム*cm2の領域特異的電気抵抗を有することを特徴とする方法。
- 請求項14に記載の方法であって、前記提供するステップが、前記基板の上に前記反射電極を提供するステップと、前記反射電極の上に前記シリコン層スタックを提供するステップと、前記シリコン層スタックの上に前記光透過電極を提供するステップとを含むことを特徴とする方法。
- 請求項14に記載の方法であって、前記提供するステップが、前記シリコン層スタックのpドープ層よりも高い温度で前記シリコン層スタックの真性層を積層させるステップを含むことを特徴とする方法。
- 非伝導性基板と、
前記基板の上に提供された相互に電気的に接続された複数の太陽電池であって、前記太陽電池の少なくとも1つが、前記基板の上に提供された反射電極と、前記反射電極の上に積層させたN−I−P層スタックを含む底部シリコン層スタックと、前記底部シリコン層スタックの上に積層させたN−I−P層スタックを含む頂部シリコン層スタックと、前記頂部シリコン層スタックの上に提供された光透過電極とを含む太陽電池と、
前記電池の間に提供された上部分離ギャップであって、前記太陽電池の光透過電極を互いから電気的に分離する上部分離ギャップと、
を含むソーラーモジュールであって、
1つの太陽電池の光透過電極が他の1つの太陽電池の反射電極に電気的に接続されていることを特徴とするソーラーモジュール。 - 請求項22に記載のソーラーモジュールであって、前記底部シリコン層スタック及び前記頂部シリコン層スタックの両方が非晶質のN−I−P層スタックを含むことを特徴とするソーラーモジュール。
- 請求項22に記載のソーラーモジュールであって、前記底部シリコン層スタックが微晶質のN−I−P層スタックであり、頂部シリコン層スタックが非晶質のN−I−P層スタックであることを特徴とするソーラーモジュール。
- 請求項22に記載のソーラーモジュールであって、上部分離ギャップの中において光透過電極の間に延在する頂部シリコン層スタックの領域は、隣接する太陽電池における反射電極と光透過電極との間の電圧差が−0.1〜0.1ボルトであるときに、少なくとも約1000オーム*cm2の領域特異的な電気分路抵抗を有することを特徴とするソーラーモジュール。
- 請求項22に記載のソーラーモジュールであって、前記太陽電池の間に提供された半導体層間ギャップをさらに含み、前記半導体層間ギャップが太陽電池の光透過電極を互いから分離し、前記半導体層間ギャップがレーザースクライブラインを含むことを特徴とするソーラーモジュール。
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EP2332177A4 (en) | 2012-12-26 |
KR20110079692A (ko) | 2011-07-07 |
CN102165604A (zh) | 2011-08-24 |
US20100078064A1 (en) | 2010-04-01 |
WO2010037102A2 (en) | 2010-04-01 |
WO2010037102A3 (en) | 2010-07-01 |
KR101308324B1 (ko) | 2013-09-17 |
EP2332177A2 (en) | 2011-06-15 |
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