JP4355321B2 - 気相成長装置 - Google Patents
気相成長装置 Download PDFInfo
- Publication number
- JP4355321B2 JP4355321B2 JP2006041885A JP2006041885A JP4355321B2 JP 4355321 B2 JP4355321 B2 JP 4355321B2 JP 2006041885 A JP2006041885 A JP 2006041885A JP 2006041885 A JP2006041885 A JP 2006041885A JP 4355321 B2 JP4355321 B2 JP 4355321B2
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- JP
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- Prior art keywords
- gas
- flow path
- valve
- sih
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000007789 gas Substances 0.000 claims description 225
- 238000004140 cleaning Methods 0.000 claims description 46
- 238000001947 vapour-phase growth Methods 0.000 claims description 31
- 230000015572 biosynthetic process Effects 0.000 claims description 20
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 8
- 150000004678 hydrides Chemical class 0.000 claims description 7
- 239000012159 carrier gas Substances 0.000 claims description 5
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 claims description 5
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 claims description 5
- 229910000077 silane Inorganic materials 0.000 claims description 5
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 claims description 5
- 239000005052 trichlorosilane Substances 0.000 claims description 5
- 238000007740 vapor deposition Methods 0.000 claims 1
- 239000013078 crystal Substances 0.000 description 20
- 238000000034 method Methods 0.000 description 9
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910020323 ClF3 Inorganic materials 0.000 description 1
- 101100441092 Danio rerio crlf3 gene Proteins 0.000 description 1
- 101100328843 Dictyostelium discoideum cofB gene Proteins 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- IYRWEQXVUNLMAY-UHFFFAOYSA-N carbonyl fluoride Chemical compound FC(F)=O IYRWEQXVUNLMAY-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000007562 laser obscuration time method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- JOHWNGGYGAVMGU-UHFFFAOYSA-N trifluorochlorine Chemical compound FCl(F)F JOHWNGGYGAVMGU-UHFFFAOYSA-N 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/005—Transport systems
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/7722—Line condition change responsive valves
- Y10T137/7758—Pilot or servo controlled
- Y10T137/7759—Responsive to change in rate of fluid flow
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Vapour Deposition (AREA)
Description
i膜が成膜される。
本発明は、上記した点に対処して鑑みなされ、安全性を大幅に改善した新規な気相成長装置、及びこの気相成長装置におけるガス混合回避方法を提供するものである。
第1の実施形態では、上述した従来例と同様で、図1に示す如く、支持台101上に載置されたSi単結晶ウェハ102がチャンバー103内に収納される。収納されたSi単結晶ウェハ102は、ヒータ104により、成膜に必要な温度に加熱される。
第2の実施形態では、上述した実施形態1と類似し、基本構成は略同じである。即ち、図2(a)に示す如く、支持台201上に載置されたSi単結晶ウェハ202がチャンバー203内に収納される。収納されたSi単結晶ウェハ202は、ヒータ204により、成膜に必要な温度に加熱される。
102・・・・・・・・・・Si単結晶ウェハ
103・・・・・・・・・・チャンバー
104・・・・・・・・・・ヒータ
105a・・・・・・・・・SiH4ガス流路
105b・・・・・・・・・H2ガス流路
106a・・・・・・・・・SiH4ガスシリンダ
106b・・・・・・・・・H2シリンダ
107、109、111・・バルブ
108・・・・・・・・・・ClF3ガス流路(第2のガス流路)
110・・・・・・・・・・ClF3ガスシリンダ
112・・・・・・・・・・排気用ガス流路(第3のガス流路)
113・・・・・・・・・・真空ポンプ
114・・・・・・・・・・圧力スイッチ
Claims (5)
- チャンバーに収容されたウェハ上に、気相成長法により成膜するために、成膜に必要な水素化物ガスを供給する第1の流路と、
この第1のガス流路の水素化物ガスを制御する第1のバルブと、
前記チャンバー内をクリーニングするために、クリーニング用のClF3ガスを前記チャンバー内に供給する第2の流路と、
前記チャンバー内のガスを排気する第3の流路と
を備えてなる気相成長装置であって、
前記第1のバルブを直列の2段構成とし、
前記気相成長装置は、さらに、
前記2段構成のバルブの間に設けられた圧力スイッチと、
第2のガス流路のClF3ガスを制御する第2のバルブと、
前記圧力スイッチが圧力変動を検知した場合に、前記第2のバルブを閉じるように制御する制御装置と、
を備えたことを特徴とする気相成長装置。 - 前記第1の流路は、水素化物ガスを供給する流路と、キャリアガスを供給する流路との並列に構成され、その2つの流路それぞれが2段のバルブからなり、その中間に圧力スイッチが設けられていることを特徴とする前記請求項1記載の気相成長装置。
- 前記水素化物ガスは、シラン(SiH4)ガス、トリクロルシラン(SiHCl3)ガスまたはジクロロシラン(SiH2Cl2)ガスであることを特徴とする請求項2記載の気相成長装置。
- 前記第1の流路には、水素化物ガスを供給する流路と、キャリアガスを供給する流路とが個々に構成されると共に、N2を供給するための補助流路が設けられていることを特徴とする前記請求項1記載の気相成長装置。
- 前記第1の流路は並列構成で、その一方には、シラン(SiH4)ガス、トリクロルシラン(SiHCl3)ガスまたはジクロロシラン(SiH2Cl2)ガス、他方にはH2ガスが供給されることを特徴とする前記請求項1記載の気相成長装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006041885A JP4355321B2 (ja) | 2005-03-04 | 2006-02-20 | 気相成長装置 |
US11/276,493 US8087427B2 (en) | 2005-03-04 | 2006-03-02 | Vapor phase epitaxy apparatus and irregular gas mixture avoidance method for use therewith |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005061122 | 2005-03-04 | ||
JP2006041885A JP4355321B2 (ja) | 2005-03-04 | 2006-02-20 | 気相成長装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009117161A Division JP5047223B2 (ja) | 2005-03-04 | 2009-05-14 | 気相成長装置におけるガス混合回避方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006279024A JP2006279024A (ja) | 2006-10-12 |
JP4355321B2 true JP4355321B2 (ja) | 2009-10-28 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006041885A Active JP4355321B2 (ja) | 2005-03-04 | 2006-02-20 | 気相成長装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US8087427B2 (ja) |
JP (1) | JP4355321B2 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102165604A (zh) * | 2008-09-29 | 2011-08-24 | 薄膜硅公司 | 单片集成太阳能电池组件 |
WO2010068798A2 (en) * | 2008-12-10 | 2010-06-17 | Thinsilicon Corporation | System and method for recycling a gas used to deposit a semiconductor layer |
JP6068462B2 (ja) * | 2011-06-30 | 2017-01-25 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 高速ガス交換、高速ガス切換、及びプログラミング可能なガス送出のための方法及び装置 |
JP5803552B2 (ja) * | 2011-10-14 | 2015-11-04 | 東京エレクトロン株式会社 | 処理装置 |
JP5960614B2 (ja) * | 2012-03-29 | 2016-08-02 | Ckd株式会社 | 流体制御システム、流体制御方法 |
EP3077568B1 (en) * | 2013-12-02 | 2019-02-20 | Applied Materials, Inc. | Methods and apparatus for in-situ cleaning of a process chamber |
CN111101115B (zh) * | 2018-10-25 | 2022-03-22 | 北京北方华创微电子装备有限公司 | 气路切换装置及其控制方法、半导体加工设备 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5441076A (en) * | 1992-12-11 | 1995-08-15 | Tokyo Electron Limited | Processing apparatus using gas |
JP3247581B2 (ja) | 1995-06-28 | 2002-01-15 | 株式会社東芝 | 半導体製造装置のガス供給装置およびその供給方法 |
JP4119003B2 (ja) * | 1998-04-09 | 2008-07-16 | 大陽日酸株式会社 | ガス分析装置及び方法 |
US5948958A (en) * | 1998-09-01 | 1999-09-07 | Applied Materials, Inc. | Method and apparatus for verifying the calibration of semiconductor processing equipment |
JP2000282241A (ja) | 1999-04-01 | 2000-10-10 | Matsushita Electric Ind Co Ltd | 多層薄膜の製造方法 |
US6164116A (en) * | 1999-05-06 | 2000-12-26 | Cymer, Inc. | Gas module valve automated test fixture |
JP2001135576A (ja) | 1999-10-29 | 2001-05-18 | Applied Materials Inc | 薄膜形成装置及び薄膜形成方法 |
US6863019B2 (en) * | 2000-06-13 | 2005-03-08 | Applied Materials, Inc. | Semiconductor device fabrication chamber cleaning method and apparatus with recirculation of cleaning gas |
US6515290B1 (en) * | 2000-09-05 | 2003-02-04 | Axcelis Technologies, Inc. | Bulk gas delivery system for ion implanters |
US20040050326A1 (en) * | 2002-09-12 | 2004-03-18 | Thilderkvist Karin Anna Lena | Apparatus and method for automatically controlling gas flow in a substrate processing system |
JP4385086B2 (ja) | 2003-03-14 | 2009-12-16 | パナソニック株式会社 | Cvd装置のクリーニング装置およびcvd装置のクリーニング方法 |
-
2006
- 2006-02-20 JP JP2006041885A patent/JP4355321B2/ja active Active
- 2006-03-02 US US11/276,493 patent/US8087427B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US8087427B2 (en) | 2012-01-03 |
JP2006279024A (ja) | 2006-10-12 |
US20060196411A1 (en) | 2006-09-07 |
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