DE19581590T1 - Erhöhung eines Stabilitätsverhaltens von Vorrichtungen auf der Grundlage von amorphem Silizium, die durch Plasmaablagerung unter hochgradiger Wasserstoffverdünnung bei niedrigerer Temperatur hergestellt werden - Google Patents
Erhöhung eines Stabilitätsverhaltens von Vorrichtungen auf der Grundlage von amorphem Silizium, die durch Plasmaablagerung unter hochgradiger Wasserstoffverdünnung bei niedrigerer Temperatur hergestellt werdenInfo
- Publication number
- DE19581590T1 DE19581590T1 DE19581590T DE19581590T DE19581590T1 DE 19581590 T1 DE19581590 T1 DE 19581590T1 DE 19581590 T DE19581590 T DE 19581590T DE 19581590 T DE19581590 T DE 19581590T DE 19581590 T1 DE19581590 T1 DE 19581590T1
- Authority
- DE
- Germany
- Prior art keywords
- increasing
- produced
- amorphous silicon
- lower temperature
- devices based
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 title 1
- 230000008021 deposition Effects 0.000 title 1
- 238000010790 dilution Methods 0.000 title 1
- 239000012895 dilution Substances 0.000 title 1
- 229910052739 hydrogen Inorganic materials 0.000 title 1
- 239000001257 hydrogen Substances 0.000 title 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
- H01L31/076—Multiple junction or tandem solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
- H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic System
- H01L31/03767—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic System presenting light-induced characteristic variations, e.g. Staebler-Wronski effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
- H01L31/204—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System including AIVBIV alloys, e.g. SiGe, SiC
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B10/00—Integration of renewable energy sources in buildings
- Y02B10/10—Photovoltaic [PV]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US21779994A | 1994-03-25 | 1994-03-25 | |
PCT/US1995/003119 WO1995026571A1 (en) | 1994-03-25 | 1995-03-09 | Stabilized amorphous silicon and devices containing same |
Publications (1)
Publication Number | Publication Date |
---|---|
DE19581590T1 true DE19581590T1 (de) | 1997-04-17 |
Family
ID=22812580
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19581590T Withdrawn DE19581590T1 (de) | 1994-03-25 | 1995-03-09 | Erhöhung eines Stabilitätsverhaltens von Vorrichtungen auf der Grundlage von amorphem Silizium, die durch Plasmaablagerung unter hochgradiger Wasserstoffverdünnung bei niedrigerer Temperatur hergestellt werden |
Country Status (8)
Country | Link |
---|---|
US (2) | US5646050A (de) |
JP (3) | JPH09512665A (de) |
CN (1) | CN1135635C (de) |
DE (1) | DE19581590T1 (de) |
FR (1) | FR2721754B1 (de) |
GB (1) | GB2301939B (de) |
IT (1) | IT1278061B1 (de) |
WO (1) | WO1995026571A1 (de) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE112013001688B4 (de) | 2012-05-24 | 2019-05-16 | Egypt Nanotechnology Center (Egnc) | Photovoltaikeinheit mit Bandstoppfilter |
DE112012001058B4 (de) * | 2011-03-01 | 2019-08-29 | International Business Machines Corporation | Verfahren zur herstellung einer tandem-photovoltaikeinheit |
Families Citing this family (74)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1135635C (zh) * | 1994-03-25 | 2004-01-21 | 阿莫科/恩龙太阳公司 | 增强光电器件和电子器件的光和电特性的等离子淀积工艺 |
FR2738334A1 (fr) * | 1995-09-05 | 1997-03-07 | Motorola Semiconducteurs | Dispositif allumeur a semiconducteur, pour declenchement pyrotechnique, et procede de formation d'un tel dispositif |
US6087580A (en) * | 1996-12-12 | 2000-07-11 | Energy Conversion Devices, Inc. | Semiconductor having large volume fraction of intermediate range order material |
US6224787B1 (en) * | 1997-03-10 | 2001-05-01 | Dai Nippon Printing Co., Ltd. | Liquid crystalline charge transport material |
US6252270B1 (en) | 1997-04-28 | 2001-06-26 | Agere Systems Guardian Corp. | Increased cycle specification for floating-gate and method of manufacture thereof |
US5982020A (en) | 1997-04-28 | 1999-11-09 | Lucent Technologies Inc. | Deuterated bipolar transistor and method of manufacture thereof |
US6531193B2 (en) | 1997-07-07 | 2003-03-11 | The Penn State Research Foundation | Low temperature, high quality silicon dioxide thin films deposited using tetramethylsilane (TMS) for stress control and coverage applications |
US5972765A (en) * | 1997-07-16 | 1999-10-26 | International Business Machines Corporation | Use of deuterated materials in semiconductor processing |
US6121541A (en) * | 1997-07-28 | 2000-09-19 | Bp Solarex | Monolithic multi-junction solar cells with amorphous silicon and CIS and their alloys |
US6077722A (en) * | 1998-07-14 | 2000-06-20 | Bp Solarex | Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts |
JP3792903B2 (ja) * | 1998-07-22 | 2006-07-05 | 株式会社カネカ | 半導体薄膜および薄膜デバイス |
US6111189A (en) * | 1998-07-28 | 2000-08-29 | Bp Solarex | Photovoltaic module framing system with integral electrical raceways |
US6274461B1 (en) * | 1998-08-20 | 2001-08-14 | United Solar Systems Corporation | Method for depositing layers of high quality semiconductor material |
JP3046965B1 (ja) | 1999-02-26 | 2000-05-29 | 鐘淵化学工業株式会社 | 非晶質シリコン系薄膜光電変換装置の製造方法 |
US6365511B1 (en) | 1999-06-03 | 2002-04-02 | Agere Systems Guardian Corp. | Tungsten silicide nitride as a barrier for high temperature anneals to improve hot carrier reliability |
WO2001062060A1 (en) | 2000-02-18 | 2001-08-23 | Rtkl Associates Inc. | Computer rack heat extraction device |
US6557357B2 (en) | 2000-02-18 | 2003-05-06 | Toc Technology, Llc | Computer rack heat extraction device |
US6574970B2 (en) | 2000-02-18 | 2003-06-10 | Toc Technology, Llc | Computer room air flow method and apparatus |
US6412292B2 (en) | 2000-05-09 | 2002-07-02 | Toc Technology, Llc | Computer rack heat extraction device |
JP4510242B2 (ja) * | 2000-07-11 | 2010-07-21 | キヤノン株式会社 | 薄膜形成方法 |
US7223676B2 (en) * | 2002-06-05 | 2007-05-29 | Applied Materials, Inc. | Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer |
US20070042580A1 (en) * | 2000-08-10 | 2007-02-22 | Amir Al-Bayati | Ion implanted insulator material with reduced dielectric constant |
WO2002071497A1 (de) * | 2001-03-01 | 2002-09-12 | Stmicroelectronics Nv | Optoelektronisches bauelement |
US6605529B2 (en) | 2001-05-11 | 2003-08-12 | Agere Systems Inc. | Method of creating hydrogen isotope reservoirs in a semiconductor device |
US20040253777A1 (en) * | 2001-08-30 | 2004-12-16 | Hidenori Miyoshi | Method and apparatus for forming film |
US8209185B2 (en) * | 2003-09-05 | 2012-06-26 | Emc Corporation | Interface for management of auditory communications |
DE102004003761A1 (de) * | 2004-01-23 | 2005-08-25 | Forschungszentrum Jülich GmbH | Herstellungsverfahren für Siliziumsolarzellen umfassend µc-Siliziumschichten |
JPWO2006006368A1 (ja) * | 2004-07-12 | 2008-04-24 | 株式会社カネカ | 薄膜光電変換装置の製造方法 |
DE102004061360A1 (de) * | 2004-12-21 | 2006-07-13 | Forschungszentrum Jülich GmbH | Verfahren zur Herstellung einer Dünnschichtsolarzelle mit mikrokristallinem Silizium sowie Schichtfolge |
US20060260545A1 (en) * | 2005-05-17 | 2006-11-23 | Kartik Ramaswamy | Low temperature absorption layer deposition and high speed optical annealing system |
US7312162B2 (en) * | 2005-05-17 | 2007-12-25 | Applied Materials, Inc. | Low temperature plasma deposition process for carbon layer deposition |
US7109098B1 (en) * | 2005-05-17 | 2006-09-19 | Applied Materials, Inc. | Semiconductor junction formation process including low temperature plasma deposition of an optical absorption layer and high speed optical annealing |
US7422775B2 (en) * | 2005-05-17 | 2008-09-09 | Applied Materials, Inc. | Process for low temperature plasma deposition of an optical absorption layer and high speed optical annealing |
US7312148B2 (en) * | 2005-08-08 | 2007-12-25 | Applied Materials, Inc. | Copper barrier reflow process employing high speed optical annealing |
US7429532B2 (en) * | 2005-08-08 | 2008-09-30 | Applied Materials, Inc. | Semiconductor substrate process using an optically writable carbon-containing mask |
US7335611B2 (en) * | 2005-08-08 | 2008-02-26 | Applied Materials, Inc. | Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer |
US7323401B2 (en) * | 2005-08-08 | 2008-01-29 | Applied Materials, Inc. | Semiconductor substrate process using a low temperature deposited carbon-containing hard mask |
JP2009521801A (ja) * | 2005-12-22 | 2009-06-04 | エーエスエム アメリカ インコーポレイテッド | ドープされた半導体物質のエピタキシャル堆積 |
CA2649520A1 (en) | 2006-04-14 | 2007-10-25 | Silica Tech, Llc | Plasma deposition apparatus and method for making solar cells |
US20070256734A1 (en) * | 2006-05-08 | 2007-11-08 | United Solar Ovonic Llc | Stabilized photovoltaic device and methods for its manufacture |
US20090183771A1 (en) * | 2006-06-23 | 2009-07-23 | Hitoshi Sannomiya | Plasma processing apparatus, plasma processing method and photoelectric conversion element |
US20080072953A1 (en) * | 2006-09-27 | 2008-03-27 | Thinsilicon Corp. | Back contact device for photovoltaic cells and method of manufacturing a back contact device |
US8203071B2 (en) * | 2007-01-18 | 2012-06-19 | Applied Materials, Inc. | Multi-junction solar cells and methods and apparatuses for forming the same |
JP4484886B2 (ja) * | 2007-01-23 | 2010-06-16 | シャープ株式会社 | 積層型光電変換装置の製造方法 |
US7993700B2 (en) * | 2007-03-01 | 2011-08-09 | Applied Materials, Inc. | Silicon nitride passivation for a solar cell |
WO2008150769A2 (en) * | 2007-05-31 | 2008-12-11 | Thinsilicon Corporation | Photovoltaic device and method of manufacturing photovoltaic devices |
EP2215652A4 (de) * | 2007-11-02 | 2011-10-05 | Applied Materials Inc | Plasmabehandlung zwischen abscheidungsprozessen |
WO2009059240A1 (en) * | 2007-11-02 | 2009-05-07 | Applied Materials, Inc. | Intrinsic amorphous silicon layer |
US8198528B2 (en) | 2007-12-14 | 2012-06-12 | Sunpower Corporation | Anti-reflective coating with high optical absorption layer for backside contact solar cells |
US7955890B2 (en) * | 2008-06-24 | 2011-06-07 | Applied Materials, Inc. | Methods for forming an amorphous silicon film in display devices |
US8652871B2 (en) * | 2008-08-29 | 2014-02-18 | Tel Solar Ag | Method for depositing an amorphous silicon film for photovoltaic devices with reduced light-induced degradation for improved stabilized performance |
KR101308324B1 (ko) * | 2008-09-29 | 2013-09-17 | 씬실리콘 코포레이션 | 단일체로 통합된 태양광 모듈 |
KR101531700B1 (ko) * | 2008-12-01 | 2015-06-25 | 주성엔지니어링(주) | 박막형 태양전지의 제조방법 |
DE102008064134B4 (de) * | 2008-12-19 | 2016-07-21 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Beschichtung von Gegenständen mittels eines Niederdruckplasmas |
BRPI1009416A2 (pt) * | 2009-03-30 | 2016-03-01 | Sanyo Electric Co | célula solar. |
US20100282314A1 (en) * | 2009-05-06 | 2010-11-11 | Thinsilicion Corporation | Photovoltaic cells and methods to enhance light trapping in semiconductor layer stacks |
EP2441095A4 (de) * | 2009-06-10 | 2013-07-03 | Thinsilicon Corp | Pv-module und verfahren zur herstellung von pv-modulen mit tandem-halbleiterschichtstapeln |
US20110114156A1 (en) * | 2009-06-10 | 2011-05-19 | Thinsilicon Corporation | Photovoltaic modules having a built-in bypass diode and methods for manufacturing photovoltaic modules having a built-in bypass diode |
US8535760B2 (en) | 2009-09-11 | 2013-09-17 | Air Products And Chemicals, Inc. | Additives to silane for thin film silicon photovoltaic devices |
KR101262871B1 (ko) * | 2010-03-26 | 2013-05-09 | 한국철강 주식회사 | 플렉서블 기판 또는 인플렉서블 기판을 포함하는 광기전력 장치 및 그의 제조 방법 |
CN102034897B (zh) * | 2010-10-15 | 2012-08-08 | 苏州阿特斯阳光电力科技有限公司 | 晶体硅太阳能电池片电致衰减老化装置及老化方法 |
US20130019929A1 (en) * | 2011-07-19 | 2013-01-24 | International Business Machines | Reduction of light induced degradation by minimizing band offset |
US8778448B2 (en) * | 2011-07-21 | 2014-07-15 | International Business Machines Corporation | Method of stabilizing hydrogenated amorphous silicon and amorphous hydrogenated silicon alloys |
US9040340B2 (en) * | 2011-11-14 | 2015-05-26 | International Business Machines Corporation | Temperature grading for band gap engineering of photovoltaic devices |
US9234857B2 (en) | 2011-11-14 | 2016-01-12 | First Solar, Inc. | Method and apparatus providing temperature uniformity |
CN102496663A (zh) * | 2011-12-29 | 2012-06-13 | 普乐新能源(蚌埠)有限公司 | 降低非晶硅太阳能电池衰减率的方法 |
JP6306411B2 (ja) * | 2014-04-17 | 2018-04-04 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置およびプログラム |
CN104152864B (zh) * | 2014-08-22 | 2016-11-16 | 中国科学院宁波材料技术与工程研究所 | 硅薄膜的制备方法 |
DE102015114298A1 (de) * | 2015-08-27 | 2017-03-02 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren und Vorrichtung zum Stabilisieren einer photovoltaischen Silizium-Solarzelle |
CN106571287A (zh) * | 2015-10-12 | 2017-04-19 | 上海新昇半导体科技有限公司 | 外延层的形成方法 |
KR20190045154A (ko) * | 2016-06-30 | 2019-05-02 | 예히 오아 라이트 크리에이션 리미티드 | 고효율 조명 시스템 |
US11189432B2 (en) | 2016-10-24 | 2021-11-30 | Indian Institute Of Technology, Guwahati | Microfluidic electrical energy harvester |
CN111477721B (zh) * | 2020-03-04 | 2021-06-01 | 杭州电子科技大学 | 一种利用变化的电场来控制氢钝化的方法 |
US11502217B1 (en) | 2021-05-24 | 2022-11-15 | Gautam Ganguly | Methods and apparatus for reducing as-deposited and metastable defects in Amorphousilicon |
Family Cites Families (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4064521A (en) * | 1975-07-28 | 1977-12-20 | Rca Corporation | Semiconductor device having a body of amorphous silicon |
US4317844A (en) * | 1975-07-28 | 1982-03-02 | Rca Corporation | Semiconductor device having a body of amorphous silicon and method of making the same |
US4142195A (en) * | 1976-03-22 | 1979-02-27 | Rca Corporation | Schottky barrier semiconductor device and method of making same |
US4109271A (en) * | 1977-05-27 | 1978-08-22 | Rca Corporation | Amorphous silicon-amorphous silicon carbide photovoltaic device |
US4217148A (en) * | 1979-06-18 | 1980-08-12 | Rca Corporation | Compensated amorphous silicon solar cell |
US4339470A (en) * | 1981-02-13 | 1982-07-13 | Rca Corporation | Fabricating amorphous silicon solar cells by varying the temperature _of the substrate during deposition of the amorphous silicon layer |
JPS5853865A (ja) * | 1981-09-28 | 1983-03-30 | Komatsu Denshi Kinzoku Kk | アモルフアスシリコン太陽電池の製造方法 |
US4450787A (en) * | 1982-06-03 | 1984-05-29 | Rca Corporation | Glow discharge plasma deposition of thin films |
US4451538A (en) * | 1983-05-13 | 1984-05-29 | Atlantic Richfield Company | High hydrogen amorphous silicon |
US4481230A (en) * | 1983-10-27 | 1984-11-06 | Rca Corporation | Method of depositing a semiconductor layer from a glow discharge |
US4609771A (en) * | 1984-11-02 | 1986-09-02 | Sovonics Solar Systems | Tandem junction solar cell devices incorporating improved microcrystalline p-doped semiconductor alloy material |
KR910003169B1 (ko) * | 1985-11-12 | 1991-05-20 | 가부시끼가이샤 한도다이 에네르기 겐뀨소 | 반도체 장치 제조 방법 및 장치 |
US4776894A (en) * | 1986-08-18 | 1988-10-11 | Sanyo Electric Co., Ltd. | Photovoltaic device |
JPS6384075A (ja) * | 1986-09-26 | 1988-04-14 | Sanyo Electric Co Ltd | 光起電力装置 |
US4816082A (en) * | 1987-08-19 | 1989-03-28 | Energy Conversion Devices, Inc. | Thin film solar cell including a spatially modulated intrinsic layer |
JPH0650734B2 (ja) * | 1988-03-14 | 1994-06-29 | 富士電機株式会社 | 非晶質シリコン太陽電池の薄膜製造装置 |
JPH0249474A (ja) * | 1988-05-25 | 1990-02-19 | Tonen Corp | 太陽電池及びその製造方法 |
US5264710A (en) * | 1989-03-21 | 1993-11-23 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | Amorphous semiconductor, amorphous semiconductor device using hydrogen radicals |
US5152833A (en) * | 1989-08-31 | 1992-10-06 | Sanyo Electric Co., Ltd. | Amorphous silicon film, its production and photo semiconductor device utilizing such a film |
JPH05504235A (ja) * | 1990-02-07 | 1993-07-01 | シーメンス アクチエンゲゼルシヤフト | アモルフアス・ゲルマニウムをベースとする光劣化安定性半導体材料とその製造方法 |
JP2719036B2 (ja) * | 1990-08-10 | 1998-02-25 | 株式会社富士電機総合研究所 | 非晶質光電変換装置およびその製造方法 |
AU632241B2 (en) * | 1990-09-06 | 1992-12-17 | Mitsui Toatsu Chemicals Inc. | Amorphous silicon solar cell and method for manufacturing the same |
US5133986A (en) * | 1990-10-05 | 1992-07-28 | International Business Machines Corporation | Plasma enhanced chemical vapor processing system using hollow cathode effect |
JP3068276B2 (ja) * | 1991-09-04 | 2000-07-24 | 鐘淵化学工業株式会社 | 非単結晶タンデム型太陽電池の製法及びそれに用いる製造装置 |
US5242505A (en) * | 1991-12-03 | 1993-09-07 | Electric Power Research Institute | Amorphous silicon-based photovoltaic semiconductor materials free from Staebler-Wronski effects |
US5230753A (en) * | 1991-12-03 | 1993-07-27 | Princeton University | Photostable amorphous silicon-germanium alloys |
US5231048A (en) * | 1991-12-23 | 1993-07-27 | United Solar Systems Corporation | Microwave energized deposition process wherein the deposition is carried out at a pressure less than the pressure of the minimum point on the deposition system's paschen curve |
JP3162781B2 (ja) * | 1992-03-04 | 2001-05-08 | 三洋電機株式会社 | 半導体薄膜の形成方法及びこの膜の形成装置 |
JP3209789B2 (ja) * | 1992-03-28 | 2001-09-17 | 鐘淵化学工業株式会社 | ポリシリコン薄膜堆積物およびその製法 |
JP2951146B2 (ja) * | 1992-04-15 | 1999-09-20 | キヤノン株式会社 | 光起電力デバイス |
US5358755A (en) * | 1993-08-13 | 1994-10-25 | Amoco Corporation | Amorphous hydrogenated silicon-carbon alloys and solar cells and other semiconductor devices produced therefrom |
CN1135635C (zh) * | 1994-03-25 | 2004-01-21 | 阿莫科/恩龙太阳公司 | 增强光电器件和电子器件的光和电特性的等离子淀积工艺 |
-
1995
- 1995-03-09 CN CNB951922882A patent/CN1135635C/zh not_active Expired - Fee Related
- 1995-03-09 GB GB9619784A patent/GB2301939B/en not_active Expired - Fee Related
- 1995-03-09 WO PCT/US1995/003119 patent/WO1995026571A1/en active Application Filing
- 1995-03-09 JP JP7525183A patent/JPH09512665A/ja active Pending
- 1995-03-09 DE DE19581590T patent/DE19581590T1/de not_active Withdrawn
- 1995-03-24 IT IT95RM000184A patent/IT1278061B1/it active IP Right Grant
- 1995-03-24 FR FR9503516A patent/FR2721754B1/fr not_active Expired - Fee Related
-
1996
- 1996-02-09 US US08/600,154 patent/US5646050A/en not_active Expired - Lifetime
-
1997
- 1997-03-12 US US08/820,431 patent/US5942049A/en not_active Expired - Lifetime
-
2005
- 2005-10-26 JP JP2005311931A patent/JP2006080557A/ja active Pending
-
2007
- 2007-11-27 JP JP2007306162A patent/JP2008153646A/ja active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE112012001058B4 (de) * | 2011-03-01 | 2019-08-29 | International Business Machines Corporation | Verfahren zur herstellung einer tandem-photovoltaikeinheit |
DE112013001688B4 (de) | 2012-05-24 | 2019-05-16 | Egypt Nanotechnology Center (Egnc) | Photovoltaikeinheit mit Bandstoppfilter |
Also Published As
Publication number | Publication date |
---|---|
CN1144573A (zh) | 1997-03-05 |
GB2301939A (en) | 1996-12-18 |
IT1278061B1 (it) | 1997-11-17 |
CN1135635C (zh) | 2004-01-21 |
WO1995026571A1 (en) | 1995-10-05 |
ITRM950184A0 (it) | 1995-03-24 |
GB2301939B (en) | 1998-10-21 |
ITRM950184A1 (it) | 1996-09-24 |
US5942049A (en) | 1999-08-24 |
JPH09512665A (ja) | 1997-12-16 |
FR2721754A1 (fr) | 1995-12-29 |
GB9619784D0 (en) | 1996-11-06 |
JP2008153646A (ja) | 2008-07-03 |
US5646050A (en) | 1997-07-08 |
JP2006080557A (ja) | 2006-03-23 |
FR2721754B1 (fr) | 1997-12-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE19581590T1 (de) | Erhöhung eines Stabilitätsverhaltens von Vorrichtungen auf der Grundlage von amorphem Silizium, die durch Plasmaablagerung unter hochgradiger Wasserstoffverdünnung bei niedrigerer Temperatur hergestellt werden | |
DE69822142D1 (de) | Transformation von schimmeln durch agrobacterium, insbesondere von der gattung aspergillus | |
DE69503824D1 (de) | Verfahren von Ternär-C4 Typ bei niedriger Temperatur | |
DE69102021D1 (de) | Amin-Katalysatoren für die Umwandlung von Kieselsäure-Vorprodukten zu Kieselsäure bei niedriger Temperatur. | |
DE69203467D1 (de) | Wasserstoffabtrennungsvorrichtung von einer Vakuumkammer bei Kryogentemperatur, insbesondere für Hochenergieteilchenbeschleuniger. | |
DE69429951D1 (de) | Herstellungsverfahren für Halbleiteranordnung unter Verwendung der selektiven CVD-Methode | |
TR199600930A2 (tr) | Kristal yapida (R)-(-)-2-{N-£4-(1,1-dioksido-3-okzo-2, 3-dihidrobenzizotiazol-2-il)-butil|- aminometil}-kroman hidroklorür. | |
DE69603132D1 (de) | Verfahren zur Herstellung von Kernbrennstofftabletten auf Basis von (U,PU)02 unter Zugabe von organischen Zwitterion-Schwefelverbindungen | |
DE60224438D1 (de) | Aggregation von hardwareereignissen in mehrfach knotensystemen | |
IT8522315A0 (it) | Combustore per turbina a gasraffreddato mediante separazione ad urto con raffreddamento a velo fluido interno. | |
AR240808A2 (es) | Compuesto de 5-ciano-1h-pirazol-4-carboxamida y procedimiento e intermediario para prepararlo. | |
DE69023925T2 (de) | Herstellungsverfahren einer halbleiter-kühlanordnung vom wärmerohr-typ. | |
DK1299584T3 (da) | Polypropylenfibre | |
DK0726884T3 (da) | Glassammensætninger til fremstilling af dobbeltglasfibre | |
FR2666266B1 (fr) | Outil de depose de masses d'equilibrage sur turbine. | |
DE50111385D1 (de) | Substituierte 4-phenyl-1-(1-phenyl-cyclohexyl)-1,2,3,6-tetrahydropyridine | |
DE69613033T2 (de) | Züchtung von Silizium-Einkristall aus einer Schmelze mit aussergewöhnlichen Wirbelströmen auf der Oberfläche | |
NO980337L (no) | Penicillaminamidderivater | |
DE502006003085D1 (de) | Mikrosystemtechnisches bauelement mit einer unter dem einfluss von temperaturänderungen verformbaren einrichtung | |
NO964522L (no) | Fremgangmåte ved fremstilling av 5,6-dihydroksy-2-amino-1,2,3,4-tetrahydronaftalenderivater | |
ATE169846T1 (de) | Brausekopf mit einer reinigungseinrichtung | |
JPS57174453A (en) | Coated superhard alloy tool | |
NO980309D0 (no) | Nye, anti-konvulsive imidazolin-2,4-dioner med en ortosubstituert ar(alk)yl-rest i 1-stilling, og deres fremstilling | |
Cao | Semi-Markov decision problems and performance sensitivity analysis | |
JP2000100236A5 (de) |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8141 | Disposal/no request for examination | ||
8170 | Reinstatement of the former position | ||
8141 | Disposal/no request for examination | ||
8170 | Reinstatement of the former position | ||
8110 | Request for examination paragraph 44 | ||
8127 | New person/name/address of the applicant |
Owner name: BP CORPORATION NORTH AMERICA INC., WARRENVILLE, US |
|
R119 | Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee |
Effective date: 20111001 |