FR2721754B1 - Procédé de dépôt par plasma pour améliorer les propriétés électriques et optiques de dispositifs photovoltaïques et électroniques et dispositifs obtenus. - Google Patents

Procédé de dépôt par plasma pour améliorer les propriétés électriques et optiques de dispositifs photovoltaïques et électroniques et dispositifs obtenus.

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Publication number
FR2721754B1
FR2721754B1 FR9503516A FR9503516A FR2721754B1 FR 2721754 B1 FR2721754 B1 FR 2721754B1 FR 9503516 A FR9503516 A FR 9503516A FR 9503516 A FR9503516 A FR 9503516A FR 2721754 B1 FR2721754 B1 FR 2721754B1
Authority
FR
France
Prior art keywords
photovoltaic
improving
electrical
deposition method
optical properties
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9503516A
Other languages
English (en)
Other versions
FR2721754A1 (fr
Inventor
Li Yaun-Min
S Bennett Murray
Yang Liyou
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BP Solar International LLC
Original Assignee
Amoco Enron Solar Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Amoco Enron Solar Inc filed Critical Amoco Enron Solar Inc
Publication of FR2721754A1 publication Critical patent/FR2721754A1/fr
Application granted granted Critical
Publication of FR2721754B1 publication Critical patent/FR2721754B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
    • H01L31/076—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
    • H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic System
    • H01L31/03767—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic System presenting light-induced characteristic variations, e.g. Staebler-Wronski effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
    • H01L31/204—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System including AIVBIV alloys, e.g. SiGe, SiC
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B10/00—Integration of renewable energy sources in buildings
    • Y02B10/10—Photovoltaic [PV]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
FR9503516A 1994-03-25 1995-03-24 Procédé de dépôt par plasma pour améliorer les propriétés électriques et optiques de dispositifs photovoltaïques et électroniques et dispositifs obtenus. Expired - Fee Related FR2721754B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US21779994A 1994-03-25 1994-03-25

Publications (2)

Publication Number Publication Date
FR2721754A1 FR2721754A1 (fr) 1995-12-29
FR2721754B1 true FR2721754B1 (fr) 1997-12-05

Family

ID=22812580

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9503516A Expired - Fee Related FR2721754B1 (fr) 1994-03-25 1995-03-24 Procédé de dépôt par plasma pour améliorer les propriétés électriques et optiques de dispositifs photovoltaïques et électroniques et dispositifs obtenus.

Country Status (8)

Country Link
US (2) US5646050A (fr)
JP (3) JPH09512665A (fr)
CN (1) CN1135635C (fr)
DE (1) DE19581590T1 (fr)
FR (1) FR2721754B1 (fr)
GB (1) GB2301939B (fr)
IT (1) IT1278061B1 (fr)
WO (1) WO1995026571A1 (fr)

Families Citing this family (76)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1135635C (zh) * 1994-03-25 2004-01-21 阿莫科/恩龙太阳公司 增强光电器件和电子器件的光和电特性的等离子淀积工艺
FR2738334A1 (fr) * 1995-09-05 1997-03-07 Motorola Semiconducteurs Dispositif allumeur a semiconducteur, pour declenchement pyrotechnique, et procede de formation d'un tel dispositif
US6087580A (en) * 1996-12-12 2000-07-11 Energy Conversion Devices, Inc. Semiconductor having large volume fraction of intermediate range order material
US6224787B1 (en) * 1997-03-10 2001-05-01 Dai Nippon Printing Co., Ltd. Liquid crystalline charge transport material
US6252270B1 (en) 1997-04-28 2001-06-26 Agere Systems Guardian Corp. Increased cycle specification for floating-gate and method of manufacture thereof
US5982020A (en) 1997-04-28 1999-11-09 Lucent Technologies Inc. Deuterated bipolar transistor and method of manufacture thereof
US6531193B2 (en) 1997-07-07 2003-03-11 The Penn State Research Foundation Low temperature, high quality silicon dioxide thin films deposited using tetramethylsilane (TMS) for stress control and coverage applications
US5972765A (en) * 1997-07-16 1999-10-26 International Business Machines Corporation Use of deuterated materials in semiconductor processing
US6121541A (en) * 1997-07-28 2000-09-19 Bp Solarex Monolithic multi-junction solar cells with amorphous silicon and CIS and their alloys
US6077722A (en) * 1998-07-14 2000-06-20 Bp Solarex Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts
JP3792903B2 (ja) * 1998-07-22 2006-07-05 株式会社カネカ 半導体薄膜および薄膜デバイス
US6111189A (en) * 1998-07-28 2000-08-29 Bp Solarex Photovoltaic module framing system with integral electrical raceways
US6274461B1 (en) * 1998-08-20 2001-08-14 United Solar Systems Corporation Method for depositing layers of high quality semiconductor material
JP3046965B1 (ja) 1999-02-26 2000-05-29 鐘淵化学工業株式会社 非晶質シリコン系薄膜光電変換装置の製造方法
US6365511B1 (en) 1999-06-03 2002-04-02 Agere Systems Guardian Corp. Tungsten silicide nitride as a barrier for high temperature anneals to improve hot carrier reliability
WO2001062060A1 (fr) 2000-02-18 2001-08-23 Rtkl Associates Inc. Dispositif d'extraction de chaleur pour un bati d'ordinateur
US6557357B2 (en) 2000-02-18 2003-05-06 Toc Technology, Llc Computer rack heat extraction device
US6574970B2 (en) 2000-02-18 2003-06-10 Toc Technology, Llc Computer room air flow method and apparatus
US6412292B2 (en) 2000-05-09 2002-07-02 Toc Technology, Llc Computer rack heat extraction device
JP4510242B2 (ja) * 2000-07-11 2010-07-21 キヤノン株式会社 薄膜形成方法
US7223676B2 (en) * 2002-06-05 2007-05-29 Applied Materials, Inc. Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer
US20070042580A1 (en) * 2000-08-10 2007-02-22 Amir Al-Bayati Ion implanted insulator material with reduced dielectric constant
WO2002071497A1 (fr) * 2001-03-01 2002-09-12 Stmicroelectronics Nv Composant optoelectronique
US6605529B2 (en) 2001-05-11 2003-08-12 Agere Systems Inc. Method of creating hydrogen isotope reservoirs in a semiconductor device
US20040253777A1 (en) * 2001-08-30 2004-12-16 Hidenori Miyoshi Method and apparatus for forming film
US8209185B2 (en) * 2003-09-05 2012-06-26 Emc Corporation Interface for management of auditory communications
DE102004003761A1 (de) * 2004-01-23 2005-08-25 Forschungszentrum Jülich GmbH Herstellungsverfahren für Siliziumsolarzellen umfassend µc-Siliziumschichten
JPWO2006006368A1 (ja) * 2004-07-12 2008-04-24 株式会社カネカ 薄膜光電変換装置の製造方法
DE102004061360A1 (de) * 2004-12-21 2006-07-13 Forschungszentrum Jülich GmbH Verfahren zur Herstellung einer Dünnschichtsolarzelle mit mikrokristallinem Silizium sowie Schichtfolge
US20060260545A1 (en) * 2005-05-17 2006-11-23 Kartik Ramaswamy Low temperature absorption layer deposition and high speed optical annealing system
US7312162B2 (en) * 2005-05-17 2007-12-25 Applied Materials, Inc. Low temperature plasma deposition process for carbon layer deposition
US7109098B1 (en) * 2005-05-17 2006-09-19 Applied Materials, Inc. Semiconductor junction formation process including low temperature plasma deposition of an optical absorption layer and high speed optical annealing
US7422775B2 (en) * 2005-05-17 2008-09-09 Applied Materials, Inc. Process for low temperature plasma deposition of an optical absorption layer and high speed optical annealing
US7312148B2 (en) * 2005-08-08 2007-12-25 Applied Materials, Inc. Copper barrier reflow process employing high speed optical annealing
US7429532B2 (en) * 2005-08-08 2008-09-30 Applied Materials, Inc. Semiconductor substrate process using an optically writable carbon-containing mask
US7335611B2 (en) * 2005-08-08 2008-02-26 Applied Materials, Inc. Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer
US7323401B2 (en) * 2005-08-08 2008-01-29 Applied Materials, Inc. Semiconductor substrate process using a low temperature deposited carbon-containing hard mask
JP2009521801A (ja) * 2005-12-22 2009-06-04 エーエスエム アメリカ インコーポレイテッド ドープされた半導体物質のエピタキシャル堆積
CA2649520A1 (fr) 2006-04-14 2007-10-25 Silica Tech, Llc Appareil de depot par plasma et procede de fabrication de cellules solaires
US20070256734A1 (en) * 2006-05-08 2007-11-08 United Solar Ovonic Llc Stabilized photovoltaic device and methods for its manufacture
US20090183771A1 (en) * 2006-06-23 2009-07-23 Hitoshi Sannomiya Plasma processing apparatus, plasma processing method and photoelectric conversion element
US20080072953A1 (en) * 2006-09-27 2008-03-27 Thinsilicon Corp. Back contact device for photovoltaic cells and method of manufacturing a back contact device
US8203071B2 (en) * 2007-01-18 2012-06-19 Applied Materials, Inc. Multi-junction solar cells and methods and apparatuses for forming the same
JP4484886B2 (ja) * 2007-01-23 2010-06-16 シャープ株式会社 積層型光電変換装置の製造方法
US7993700B2 (en) * 2007-03-01 2011-08-09 Applied Materials, Inc. Silicon nitride passivation for a solar cell
WO2008150769A2 (fr) * 2007-05-31 2008-12-11 Thinsilicon Corporation Dispositif photovoltaïque et procédé de fabrication de dispositifs photovoltaïques
EP2215652A4 (fr) * 2007-11-02 2011-10-05 Applied Materials Inc Traitement au plasma entre des procédés de dépôt
WO2009059240A1 (fr) * 2007-11-02 2009-05-07 Applied Materials, Inc. Couche de silicium amorphe intrinsèque
US8198528B2 (en) 2007-12-14 2012-06-12 Sunpower Corporation Anti-reflective coating with high optical absorption layer for backside contact solar cells
US7955890B2 (en) * 2008-06-24 2011-06-07 Applied Materials, Inc. Methods for forming an amorphous silicon film in display devices
US8652871B2 (en) * 2008-08-29 2014-02-18 Tel Solar Ag Method for depositing an amorphous silicon film for photovoltaic devices with reduced light-induced degradation for improved stabilized performance
KR101308324B1 (ko) * 2008-09-29 2013-09-17 씬실리콘 코포레이션 단일체로 통합된 태양광 모듈
KR101531700B1 (ko) * 2008-12-01 2015-06-25 주성엔지니어링(주) 박막형 태양전지의 제조방법
DE102008064134B4 (de) * 2008-12-19 2016-07-21 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Beschichtung von Gegenständen mittels eines Niederdruckplasmas
BRPI1009416A2 (pt) * 2009-03-30 2016-03-01 Sanyo Electric Co célula solar.
US20100282314A1 (en) * 2009-05-06 2010-11-11 Thinsilicion Corporation Photovoltaic cells and methods to enhance light trapping in semiconductor layer stacks
EP2441095A4 (fr) * 2009-06-10 2013-07-03 Thinsilicon Corp Modules photovoltaïques et procédés de production de modules photovoltaïques comprenant des empilements tandem de couches semi-conductrices
US20110114156A1 (en) * 2009-06-10 2011-05-19 Thinsilicon Corporation Photovoltaic modules having a built-in bypass diode and methods for manufacturing photovoltaic modules having a built-in bypass diode
US8535760B2 (en) 2009-09-11 2013-09-17 Air Products And Chemicals, Inc. Additives to silane for thin film silicon photovoltaic devices
KR101262871B1 (ko) * 2010-03-26 2013-05-09 한국철강 주식회사 플렉서블 기판 또는 인플렉서블 기판을 포함하는 광기전력 장치 및 그의 제조 방법
CN102034897B (zh) * 2010-10-15 2012-08-08 苏州阿特斯阳光电力科技有限公司 晶体硅太阳能电池片电致衰减老化装置及老化方法
US20120222730A1 (en) * 2011-03-01 2012-09-06 International Business Machines Corporation Tandem solar cell with improved absorption material
US20130019929A1 (en) * 2011-07-19 2013-01-24 International Business Machines Reduction of light induced degradation by minimizing band offset
US8778448B2 (en) * 2011-07-21 2014-07-15 International Business Machines Corporation Method of stabilizing hydrogenated amorphous silicon and amorphous hydrogenated silicon alloys
US9040340B2 (en) * 2011-11-14 2015-05-26 International Business Machines Corporation Temperature grading for band gap engineering of photovoltaic devices
US9234857B2 (en) 2011-11-14 2016-01-12 First Solar, Inc. Method and apparatus providing temperature uniformity
CN102496663A (zh) * 2011-12-29 2012-06-13 普乐新能源（蚌埠）有限公司 降低非晶硅太阳能电池衰减率的方法
GB2502311A (en) 2012-05-24 2013-11-27 Ibm Photovoltaic device with band-stop filter
JP6306411B2 (ja) * 2014-04-17 2018-04-04 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
CN104152864B (zh) * 2014-08-22 2016-11-16 中国科学院宁波材料技术与工程研究所 硅薄膜的制备方法
DE102015114298A1 (de) * 2015-08-27 2017-03-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zum Stabilisieren einer photovoltaischen Silizium-Solarzelle
CN106571287A (zh) * 2015-10-12 2017-04-19 上海新昇半导体科技有限公司 外延层的形成方法
KR20190045154A (ko) * 2016-06-30 2019-05-02 예히 오아 라이트 크리에이션 리미티드 고효율 조명 시스템
US11189432B2 (en) 2016-10-24 2021-11-30 Indian Institute Of Technology, Guwahati Microfluidic electrical energy harvester
CN111477721B (zh) * 2020-03-04 2021-06-01 杭州电子科技大学 一种利用变化的电场来控制氢钝化的方法
US11502217B1 (en) 2021-05-24 2022-11-15 Gautam Ganguly Methods and apparatus for reducing as-deposited and metastable defects in Amorphousilicon

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4064521A (en) * 1975-07-28 1977-12-20 Rca Corporation Semiconductor device having a body of amorphous silicon
US4317844A (en) * 1975-07-28 1982-03-02 Rca Corporation Semiconductor device having a body of amorphous silicon and method of making the same
US4142195A (en) * 1976-03-22 1979-02-27 Rca Corporation Schottky barrier semiconductor device and method of making same
US4109271A (en) * 1977-05-27 1978-08-22 Rca Corporation Amorphous silicon-amorphous silicon carbide photovoltaic device
US4217148A (en) * 1979-06-18 1980-08-12 Rca Corporation Compensated amorphous silicon solar cell
US4339470A (en) * 1981-02-13 1982-07-13 Rca Corporation Fabricating amorphous silicon solar cells by varying the temperature _of the substrate during deposition of the amorphous silicon layer
JPS5853865A (ja) * 1981-09-28 1983-03-30 Komatsu Denshi Kinzoku Kk アモルフアスシリコン太陽電池の製造方法
US4450787A (en) * 1982-06-03 1984-05-29 Rca Corporation Glow discharge plasma deposition of thin films
US4451538A (en) * 1983-05-13 1984-05-29 Atlantic Richfield Company High hydrogen amorphous silicon
US4481230A (en) * 1983-10-27 1984-11-06 Rca Corporation Method of depositing a semiconductor layer from a glow discharge
US4609771A (en) * 1984-11-02 1986-09-02 Sovonics Solar Systems Tandem junction solar cell devices incorporating improved microcrystalline p-doped semiconductor alloy material
KR910003169B1 (ko) * 1985-11-12 1991-05-20 가부시끼가이샤 한도다이 에네르기 겐뀨소 반도체 장치 제조 방법 및 장치
US4776894A (en) * 1986-08-18 1988-10-11 Sanyo Electric Co., Ltd. Photovoltaic device
JPS6384075A (ja) * 1986-09-26 1988-04-14 Sanyo Electric Co Ltd 光起電力装置
US4816082A (en) * 1987-08-19 1989-03-28 Energy Conversion Devices, Inc. Thin film solar cell including a spatially modulated intrinsic layer
JPH0650734B2 (ja) * 1988-03-14 1994-06-29 富士電機株式会社 非晶質シリコン太陽電池の薄膜製造装置
JPH0249474A (ja) * 1988-05-25 1990-02-19 Tonen Corp 太陽電池及びその製造方法
US5264710A (en) * 1989-03-21 1993-11-23 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Amorphous semiconductor, amorphous semiconductor device using hydrogen radicals
US5152833A (en) * 1989-08-31 1992-10-06 Sanyo Electric Co., Ltd. Amorphous silicon film, its production and photo semiconductor device utilizing such a film
JPH05504235A (ja) * 1990-02-07 1993-07-01 シーメンス アクチエンゲゼルシヤフト アモルフアス・ゲルマニウムをベースとする光劣化安定性半導体材料とその製造方法
JP2719036B2 (ja) * 1990-08-10 1998-02-25 株式会社富士電機総合研究所 非晶質光電変換装置およびその製造方法
AU632241B2 (en) * 1990-09-06 1992-12-17 Mitsui Toatsu Chemicals Inc. Amorphous silicon solar cell and method for manufacturing the same
US5133986A (en) * 1990-10-05 1992-07-28 International Business Machines Corporation Plasma enhanced chemical vapor processing system using hollow cathode effect
JP3068276B2 (ja) * 1991-09-04 2000-07-24 鐘淵化学工業株式会社 非単結晶タンデム型太陽電池の製法及びそれに用いる製造装置
US5242505A (en) * 1991-12-03 1993-09-07 Electric Power Research Institute Amorphous silicon-based photovoltaic semiconductor materials free from Staebler-Wronski effects
US5230753A (en) * 1991-12-03 1993-07-27 Princeton University Photostable amorphous silicon-germanium alloys
US5231048A (en) * 1991-12-23 1993-07-27 United Solar Systems Corporation Microwave energized deposition process wherein the deposition is carried out at a pressure less than the pressure of the minimum point on the deposition system's paschen curve
JP3162781B2 (ja) * 1992-03-04 2001-05-08 三洋電機株式会社 半導体薄膜の形成方法及びこの膜の形成装置
JP3209789B2 (ja) * 1992-03-28 2001-09-17 鐘淵化学工業株式会社 ポリシリコン薄膜堆積物およびその製法
JP2951146B2 (ja) * 1992-04-15 1999-09-20 キヤノン株式会社 光起電力デバイス
US5358755A (en) * 1993-08-13 1994-10-25 Amoco Corporation Amorphous hydrogenated silicon-carbon alloys and solar cells and other semiconductor devices produced therefrom
CN1135635C (zh) * 1994-03-25 2004-01-21 阿莫科/恩龙太阳公司 增强光电器件和电子器件的光和电特性的等离子淀积工艺

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CN1144573A (zh) 1997-03-05
GB2301939A (en) 1996-12-18
IT1278061B1 (it) 1997-11-17
CN1135635C (zh) 2004-01-21
WO1995026571A1 (fr) 1995-10-05
ITRM950184A0 (it) 1995-03-24
GB2301939B (en) 1998-10-21
ITRM950184A1 (it) 1996-09-24
DE19581590T1 (de) 1997-04-17
US5942049A (en) 1999-08-24
JPH09512665A (ja) 1997-12-16
FR2721754A1 (fr) 1995-12-29
GB9619784D0 (en) 1996-11-06
JP2008153646A (ja) 2008-07-03
US5646050A (en) 1997-07-08
JP2006080557A (ja) 2006-03-23

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