DE69314770D1 - Reaktives Abscheidungsverfahren mittels ionisiertem Cluster-Strahl - Google Patents

Reaktives Abscheidungsverfahren mittels ionisiertem Cluster-Strahl

Info

Publication number
DE69314770D1
DE69314770D1 DE69314770T DE69314770T DE69314770D1 DE 69314770 D1 DE69314770 D1 DE 69314770D1 DE 69314770 T DE69314770 T DE 69314770T DE 69314770 T DE69314770 T DE 69314770T DE 69314770 D1 DE69314770 D1 DE 69314770D1
Authority
DE
Germany
Prior art keywords
deposition process
cluster beam
reactive deposition
ionized cluster
ionized
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69314770T
Other languages
English (en)
Other versions
DE69314770T2 (de
Inventor
Akira Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of DE69314770D1 publication Critical patent/DE69314770D1/de
Application granted granted Critical
Publication of DE69314770T2 publication Critical patent/DE69314770T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/221—Ion beam deposition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
DE69314770T 1993-02-26 1993-08-03 Reaktives Abscheidungsverfahren mittels ionisiertem Cluster-Strahl Expired - Fee Related DE69314770T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5038906A JP2766153B2 (ja) 1993-02-26 1993-02-26 反応性イオンクラスタービーム蒸着法及びその装置

Publications (2)

Publication Number Publication Date
DE69314770D1 true DE69314770D1 (de) 1997-11-27
DE69314770T2 DE69314770T2 (de) 1998-06-10

Family

ID=12538244

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69314770T Expired - Fee Related DE69314770T2 (de) 1993-02-26 1993-08-03 Reaktives Abscheidungsverfahren mittels ionisiertem Cluster-Strahl

Country Status (4)

Country Link
US (1) US5413820A (de)
EP (1) EP0612860B1 (de)
JP (1) JP2766153B2 (de)
DE (1) DE69314770T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5855950A (en) * 1996-12-30 1999-01-05 Implant Sciences Corporation Method for growing an alumina surface on orthopaedic implant components
US6022598A (en) * 1998-04-16 2000-02-08 United Technologies Corporation ICB method of forming high refractive index films
US7179508B2 (en) 2003-05-30 2007-02-20 The Board Of Trustees Of The University Of Illinois Conducting polymer films and method of manufacturing the same by surface polymerization using ion-assisted deposition
US8835880B2 (en) * 2006-10-31 2014-09-16 Fei Company Charged particle-beam processing using a cluster source
JP4601076B2 (ja) * 2007-05-28 2010-12-22 株式会社マイクロマテリアルズジャパン イオンクラスタービーム蒸着装置
JP2011014559A (ja) * 2009-06-30 2011-01-20 Dainippon Printing Co Ltd 太陽電池モジュール用保護フィルム及び該保護フィルムを使用した太陽電池モジュール

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51101735A (ja) * 1975-03-06 1976-09-08 Sumitomo Bakelite Co Kinzokuhakumakuhifukunetsukasoseijushifuirumunoseizohoho
KR890002747B1 (ko) * 1983-11-07 1989-07-26 가부시기가이샤 히다찌세이사꾸쇼 이온 빔에 의한 성막방법 및 그 장치
WO1987005637A1 (en) * 1986-03-12 1987-09-24 Tobi Co., Ltd. Continuous ion plating device for rapidly moving film
DE3634598C2 (de) * 1986-10-10 1994-06-16 Leybold Ag Verfahren und Vorrichtung zum reaktiven Aufdampfen von Metallverbindungen
JPH03153865A (ja) * 1989-11-13 1991-07-01 Mitsubishi Electric Corp 化合物薄膜形成装置
JP2915170B2 (ja) * 1991-06-05 1999-07-05 三菱電機株式会社 薄膜形成装置及び薄膜形成方法

Also Published As

Publication number Publication date
EP0612860A1 (de) 1994-08-31
JPH07150341A (ja) 1995-06-13
EP0612860B1 (de) 1997-10-22
US5413820A (en) 1995-05-09
JP2766153B2 (ja) 1998-06-18
DE69314770T2 (de) 1998-06-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee