DE69635972D1 - Plasma-Ätz-Verfahren - Google Patents

Plasma-Ätz-Verfahren

Info

Publication number
DE69635972D1
DE69635972D1 DE69635972T DE69635972T DE69635972D1 DE 69635972 D1 DE69635972 D1 DE 69635972D1 DE 69635972 T DE69635972 T DE 69635972T DE 69635972 T DE69635972 T DE 69635972T DE 69635972 D1 DE69635972 D1 DE 69635972D1
Authority
DE
Germany
Prior art keywords
etching process
plasma etching
plasma
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69635972T
Other languages
English (en)
Other versions
DE69635972T2 (de
Inventor
Koshiishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Application granted granted Critical
Publication of DE69635972D1 publication Critical patent/DE69635972D1/de
Publication of DE69635972T2 publication Critical patent/DE69635972T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • ing And Chemical Polishing (AREA)
DE69635972T 1995-10-26 1996-10-25 Plasma-Ätz-Verfahren Expired - Lifetime DE69635972T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP7302139A JPH09129612A (ja) 1995-10-26 1995-10-26 エッチングガス及びエッチング方法
JP30213995 1995-10-26

Publications (2)

Publication Number Publication Date
DE69635972D1 true DE69635972D1 (de) 2006-05-18
DE69635972T2 DE69635972T2 (de) 2006-12-07

Family

ID=17905384

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69635972T Expired - Lifetime DE69635972T2 (de) 1995-10-26 1996-10-25 Plasma-Ätz-Verfahren

Country Status (5)

Country Link
US (1) US5928963A (de)
EP (1) EP0776032B1 (de)
JP (1) JPH09129612A (de)
DE (1) DE69635972T2 (de)
TW (1) TW547488U (de)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1027781A (ja) * 1996-07-10 1998-01-27 Daikin Ind Ltd エッチングガスおよびクリーニングガス
TW428045B (en) * 1997-08-20 2001-04-01 Air Liquide Electronics Chemic Plasma cleaning and etching methods using non-global-warming compounds
JP4602545B2 (ja) * 1997-09-16 2010-12-22 アプライド マテリアルズ インコーポレイテッド プラズマチャンバの半導体ワークピース用シュラウド
US6183655B1 (en) * 1997-09-19 2001-02-06 Applied Materials, Inc. Tunable process for selectively etching oxide using fluoropropylene and a hydrofluorocarbon
US5866485A (en) * 1997-09-29 1999-02-02 Siemens Aktiengesellschaft Techniques for etching a silicon dioxide-containing layer
US6635185B2 (en) * 1997-12-31 2003-10-21 Alliedsignal Inc. Method of etching and cleaning using fluorinated carbonyl compounds
JP4702295B2 (ja) * 1998-04-20 2011-06-15 株式会社日立製作所 半導体製造装置、および半導体検査装置
JP4151749B2 (ja) 1998-07-16 2008-09-17 東京エレクトロンＡｔ株式会社 プラズマ処理装置およびその方法
US6374833B1 (en) * 1999-05-05 2002-04-23 Mosel Vitelic, Inc. Method of in situ reactive gas plasma treatment
US6749763B1 (en) * 1999-08-02 2004-06-15 Matsushita Electric Industrial Co., Ltd. Plasma processing method
US6502530B1 (en) * 2000-04-26 2003-01-07 Unaxis Balzers Aktiengesellschaft Design of gas injection for the electrode in a capacitively coupled RF plasma reactor
WO2002071463A1 (en) * 2001-03-02 2002-09-12 Tokyo Electron Limited Shower head gas injection apparatus with secondary high pressure pulsed gas injection
JP3527901B2 (ja) * 2001-07-24 2004-05-17 株式会社日立製作所 プラズマエッチング方法
KR100452318B1 (ko) * 2002-01-17 2004-10-12 삼성전자주식회사 압력조절시스템 및 이를 이용하는 압력조절방법
US6962644B2 (en) * 2002-03-18 2005-11-08 Applied Materials, Inc. Tandem etch chamber plasma processing system
US7162070B2 (en) * 2003-06-06 2007-01-09 Acushnet Company Use of patterned, structured light to detect and measure surface defects on a golf ball
US20060081337A1 (en) * 2004-03-12 2006-04-20 Shinji Himori Capacitive coupling plasma processing apparatus
US20080119055A1 (en) * 2006-11-21 2008-05-22 Lam Research Corporation Reducing twisting in ultra-high aspect ratio dielectric etch
JP5203986B2 (ja) * 2009-01-19 2013-06-05 東京エレクトロン株式会社 フォーカスリングの加熱方法、プラズマエッチング方法、プラズマエッチング装置及びコンピュータ記憶媒体
WO2014032655A2 (de) * 2012-08-29 2014-03-06 Jacobs University Bremen Ggmbh Halbleiterbauelement mit geschützter funktionsschicht
CN104267543B (zh) * 2014-10-10 2017-07-07 深圳市华星光电技术有限公司 液晶显示面板及其制造方法
US10555412B2 (en) 2018-05-10 2020-02-04 Applied Materials, Inc. Method of controlling ion energy distribution using a pulse generator with a current-return output stage
US11476145B2 (en) 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
WO2020154310A1 (en) 2019-01-22 2020-07-30 Applied Materials, Inc. Feedback loop for controlling a pulsed voltage waveform
US11508554B2 (en) 2019-01-24 2022-11-22 Applied Materials, Inc. High voltage filter assembly
US11848176B2 (en) 2020-07-31 2023-12-19 Applied Materials, Inc. Plasma processing using pulsed-voltage and radio-frequency power
US11901157B2 (en) 2020-11-16 2024-02-13 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11798790B2 (en) 2020-11-16 2023-10-24 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
KR102582730B1 (ko) * 2021-04-07 2023-09-25 (주)후성 플루오르화 시클로프로판 가스의 제조방법 및 이를 포함하는 에칭용 가스 조성물
US11495470B1 (en) 2021-04-16 2022-11-08 Applied Materials, Inc. Method of enhancing etching selectivity using a pulsed plasma
US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11967483B2 (en) 2021-06-02 2024-04-23 Applied Materials, Inc. Plasma excitation with ion energy control
US11984306B2 (en) 2021-06-09 2024-05-14 Applied Materials, Inc. Plasma chamber and chamber component cleaning methods
US11810760B2 (en) 2021-06-16 2023-11-07 Applied Materials, Inc. Apparatus and method of ion current compensation
US11569066B2 (en) 2021-06-23 2023-01-31 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US11776788B2 (en) 2021-06-28 2023-10-03 Applied Materials, Inc. Pulsed voltage boost for substrate processing
US11476090B1 (en) 2021-08-24 2022-10-18 Applied Materials, Inc. Voltage pulse time-domain multiplexing
US11694876B2 (en) 2021-12-08 2023-07-04 Applied Materials, Inc. Apparatus and method for delivering a plurality of waveform signals during plasma processing
US11972924B2 (en) 2022-06-08 2024-04-30 Applied Materials, Inc. Pulsed voltage source for plasma processing applications

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4260649A (en) * 1979-05-07 1981-04-07 The Perkin-Elmer Corporation Laser induced dissociative chemical gas phase processing of workpieces
JPS6077429A (ja) * 1983-10-04 1985-05-02 Asahi Glass Co Ltd ドライエツチング方法
FR2619578A1 (fr) * 1987-08-18 1989-02-24 Air Liquide Procede de gravure ionique reactive a basse tension d'autopolarisation par addition de gaz inertes
GB2212974B (en) * 1987-11-25 1992-02-12 Fuji Electric Co Ltd Plasma processing apparatus
US5242538A (en) * 1992-01-29 1993-09-07 Applied Materials, Inc. Reactive ion etch process including hydrogen radicals
JP2941572B2 (ja) * 1992-08-11 1999-08-25 三菱電機株式会社 プラズマエッチング装置及び半導体装置の製造方法
JPH06163476A (ja) * 1992-11-18 1994-06-10 Sony Corp ドライエッチング方法
JP2957403B2 (ja) * 1993-01-18 1999-10-04 日本電気株式会社 プラズマエッチング方法とその装置
KR960006822B1 (ko) * 1993-04-15 1996-05-23 삼성전자주식회사 반도체장치의 미세패턴 형성방법
JP3623256B2 (ja) * 1993-06-30 2005-02-23 株式会社東芝 表面処理方法および表面処理装置
US5468341A (en) * 1993-12-28 1995-11-21 Nec Corporation Plasma-etching method and apparatus therefor

Also Published As

Publication number Publication date
DE69635972T2 (de) 2006-12-07
EP0776032A3 (de) 1998-04-15
JPH09129612A (ja) 1997-05-16
TW547488U (en) 2003-08-11
EP0776032A2 (de) 1997-05-28
US5928963A (en) 1999-07-27
EP0776032B1 (de) 2006-03-29

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Legal Events

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