FI943184A0 - Plasmareaktori pinnoitus- tai etsausprosessia varten - Google Patents

Plasmareaktori pinnoitus- tai etsausprosessia varten

Info

Publication number
FI943184A0
FI943184A0 FI943184A FI943184A FI943184A0 FI 943184 A0 FI943184 A0 FI 943184A0 FI 943184 A FI943184 A FI 943184A FI 943184 A FI943184 A FI 943184A FI 943184 A0 FI943184 A0 FI 943184A0
Authority
FI
Finland
Prior art keywords
coating
etching process
plasma reactor
reactor
plasma
Prior art date
Application number
FI943184A
Other languages
English (en)
Swedish (sv)
Other versions
FI943184A (fi
Inventor
David Pearson
Original Assignee
Cit Alcatel
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cit Alcatel filed Critical Cit Alcatel
Publication of FI943184A0 publication Critical patent/FI943184A0/fi
Publication of FI943184A publication Critical patent/FI943184A/fi

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • ing And Chemical Polishing (AREA)
FI943184A 1993-07-05 1994-07-01 Plasmareaktori pinnoitus- tai etsausprosessia varten FI943184A (fi)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9308204A FR2707449B1 (fr) 1993-07-05 1993-07-05 Réacteur à plasma pour un procédé de dépôt ou de gravure.

Publications (2)

Publication Number Publication Date
FI943184A0 true FI943184A0 (fi) 1994-07-01
FI943184A FI943184A (fi) 1995-01-06

Family

ID=9448909

Family Applications (1)

Application Number Title Priority Date Filing Date
FI943184A FI943184A (fi) 1993-07-05 1994-07-01 Plasmareaktori pinnoitus- tai etsausprosessia varten

Country Status (5)

Country Link
EP (1) EP0633713A1 (fi)
JP (1) JPH0773996A (fi)
FI (1) FI943184A (fi)
FR (1) FR2707449B1 (fi)
NO (1) NO942489L (fi)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU6405496A (en) * 1995-06-29 1997-01-30 Lam Research Corporation A scalable helicon wave plasma processing device with a non-cylindrical source chamber
DE19606375A1 (de) * 1996-02-21 1997-08-28 Balzers Prozes Systeme Gmbh Plasmaquelle mit eingekoppelten Whistler- oder Helikonwellen
US5868897A (en) * 1996-07-31 1999-02-09 Toyo Technologies, Inc. Device and method for processing a plasma to alter the surface of a substrate using neutrals
US6085688A (en) 1998-03-27 2000-07-11 Applied Materials, Inc. Method and apparatus for improving processing and reducing charge damage in an inductively coupled plasma reactor
RU2196395C1 (ru) * 2001-05-30 2003-01-10 Александров Андрей Федорович Плазменный реактор и устройство для генерации плазмы (варианты)
JP4741845B2 (ja) * 2004-01-13 2011-08-10 株式会社 セルバック 誘導結合プラズマ処理装置
WO2024070562A1 (ja) * 2022-09-30 2024-04-04 東京エレクトロン株式会社 プラズマ処理装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3958883A (en) * 1974-07-10 1976-05-25 Baird-Atomic, Inc. Radio frequency induced plasma excitation of optical emission spectroscopic samples
US4658153A (en) * 1984-06-18 1987-04-14 Amnon Brosh Planar coil apparatus for providing a frequency output vs. position
EP0379828B1 (en) * 1989-01-25 1995-09-27 International Business Machines Corporation Radio frequency induction/multipole plasma processing tool
GB8905075D0 (en) * 1989-03-06 1989-04-19 Nordiko Ltd Electrode assembly and apparatus
US4990229A (en) * 1989-06-13 1991-02-05 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus
US4948458A (en) * 1989-08-14 1990-08-14 Lam Research Corporation Method and apparatus for producing magnetically-coupled planar plasma
JPH0775226B2 (ja) * 1990-04-10 1995-08-09 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン プラズマ処理方法及び装置

Also Published As

Publication number Publication date
JPH0773996A (ja) 1995-03-17
FR2707449B1 (fr) 1995-08-11
NO942489L (no) 1995-01-06
FI943184A (fi) 1995-01-06
NO942489D0 (no) 1994-07-01
FR2707449A1 (fr) 1995-01-13
EP0633713A1 (fr) 1995-01-11

Similar Documents

Publication Publication Date Title
DE69635972D1 (de) Plasma-Ätz-Verfahren
DE69426463T2 (de) Mikrowellenplasmareaktor
DE69226253T2 (de) Plasmaätzverfahren und Reaktor zur Plasmabearbeitung
EP0726596A3 (en) Plasma etching process
DE69513758D1 (de) Ätzverfahren und Plasmareaktor zur Durchführung desselben
IL118342A (en) Plasma etching apparatus
DE4497732T1 (de) Plasmaschneideverfahren
DE59506125D1 (de) Plasmareaktor
DE69322058T2 (de) Plasma-Ätzverfahren
DE69028650D1 (de) Plasma-Ätzmethode
DE69329844T2 (de) Beschichtungsverfahren
DE69406974T2 (de) Beschichtungsverfahren
GB9303257D0 (en) Semiconductor etching process
DE69404603T2 (de) Beschichtungsverfahren
GB2267291B (en) Plasma deposition process
DE69417190D1 (de) Beschichtungsverfahren
DE69402139T2 (de) Plasma Reaktor für Abscheidung- oder Ätz-Prozess
FI943184A0 (fi) Plasmareaktori pinnoitus- tai etsausprosessia varten
EP0607787A3 (de) Vorrichtung zum Beschichten oder Ätzen von Substraten.
DE69233144D1 (de) Verfahren zur Plasmabeschichtung
DE69408925T2 (de) Beschichtungsverfahren
FI954399A0 (fi) Kemiallinen prosessi
KR970015305U (ko) 플라즈마 에칭 장치
KR950012589U (ko) 플라즈마 보조 화학 기상 증착 장치
KR940001972U (ko) 평판형 플라즈마 식각장비

Legal Events

Date Code Title Description
FD Application lapsed