GB2267291B - Plasma deposition process - Google Patents

Plasma deposition process

Info

Publication number
GB2267291B
GB2267291B GB9211242A GB9211242A GB2267291B GB 2267291 B GB2267291 B GB 2267291B GB 9211242 A GB9211242 A GB 9211242A GB 9211242 A GB9211242 A GB 9211242A GB 2267291 B GB2267291 B GB 2267291B
Authority
GB
United Kingdom
Prior art keywords
deposition process
plasma deposition
plasma
deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9211242A
Other versions
GB2267291A (en
GB9211242D0 (en
Inventor
Rudolf August Herbert Heinecke
Peter Gordon Eldridge
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nortel Networks Ltd
Original Assignee
Northern Telecom Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Northern Telecom Ltd filed Critical Northern Telecom Ltd
Priority to GB9211242A priority Critical patent/GB2267291B/en
Publication of GB9211242D0 publication Critical patent/GB9211242D0/en
Publication of GB2267291A publication Critical patent/GB2267291A/en
Application granted granted Critical
Publication of GB2267291B publication Critical patent/GB2267291B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
GB9211242A 1992-05-27 1992-05-27 Plasma deposition process Expired - Fee Related GB2267291B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB9211242A GB2267291B (en) 1992-05-27 1992-05-27 Plasma deposition process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9211242A GB2267291B (en) 1992-05-27 1992-05-27 Plasma deposition process

Publications (3)

Publication Number Publication Date
GB9211242D0 GB9211242D0 (en) 1992-07-08
GB2267291A GB2267291A (en) 1993-12-01
GB2267291B true GB2267291B (en) 1995-02-01

Family

ID=10716109

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9211242A Expired - Fee Related GB2267291B (en) 1992-05-27 1992-05-27 Plasma deposition process

Country Status (1)

Country Link
GB (1) GB2267291B (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE29502080U1 (en) * 1995-02-09 1995-03-23 Interlock Ag, Schlieren Device for producing ID cards and ID card produced thereafter
US6559026B1 (en) 2000-05-25 2003-05-06 Applied Materials, Inc Trench fill with HDP-CVD process including coupled high power density plasma deposition
US6596653B2 (en) 2001-05-11 2003-07-22 Applied Materials, Inc. Hydrogen assisted undoped silicon oxide deposition process for HDP-CVD
US6740601B2 (en) 2001-05-11 2004-05-25 Applied Materials Inc. HDP-CVD deposition process for filling high aspect ratio gaps
US6812153B2 (en) 2002-04-30 2004-11-02 Applied Materials Inc. Method for high aspect ratio HDP CVD gapfill
US7628897B2 (en) 2002-10-23 2009-12-08 Applied Materials, Inc. Reactive ion etching for semiconductor device feature topography modification
US7097886B2 (en) 2002-12-13 2006-08-29 Applied Materials, Inc. Deposition process for high aspect ratio trenches
US6808748B2 (en) 2003-01-23 2004-10-26 Applied Materials, Inc. Hydrogen assisted HDP-CVD deposition process for aggressive gap-fill technology
US7081414B2 (en) 2003-05-23 2006-07-25 Applied Materials, Inc. Deposition-selective etch-deposition process for dielectric film gapfill
US7205240B2 (en) 2003-06-04 2007-04-17 Applied Materials, Inc. HDP-CVD multistep gapfill process
US6903031B2 (en) 2003-09-03 2005-06-07 Applied Materials, Inc. In-situ-etch-assisted HDP deposition using SiF4 and hydrogen
US7087497B2 (en) 2004-03-04 2006-08-08 Applied Materials Low-thermal-budget gapfill process
US7678715B2 (en) 2007-12-21 2010-03-16 Applied Materials, Inc. Low wet etch rate silicon nitride film

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1153794A (en) * 1965-10-11 1969-05-29 Ibm Improvements in and relating to the Deposition of Silicon Nitride Films
GB1264163A (en) * 1968-04-18 1972-02-16
US4410559A (en) * 1980-10-31 1983-10-18 Yoshihiro Hamakawa Method of forming amorphous silicon films
US4572841A (en) * 1984-12-28 1986-02-25 Rca Corporation Low temperature method of deposition silicon dioxide
GB2175137A (en) * 1985-05-13 1986-11-19 Mobil Solar Energy Corp Hydrogen passivation of polysilicon
US4634635A (en) * 1983-09-30 1987-01-06 Kabushiki Kaisha Toshiba Black ornament
WO1988004333A1 (en) * 1986-12-10 1988-06-16 The British Petroleum Company P.L.C. Production of silicon carbide
WO1990015018A1 (en) * 1989-06-05 1990-12-13 Sumitomo Precision Products Company Limited Coated dielectric material for an ozone generator
EP0422243A1 (en) * 1989-03-31 1991-04-17 Canon Kabushiki Kaisha Method of forming polycrystalline film by chemical vapor deposition
US5037514A (en) * 1986-01-06 1991-08-06 Semiconductor Energy Laboratory Co., Ltd. Silicon oxide depositing method

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1153794A (en) * 1965-10-11 1969-05-29 Ibm Improvements in and relating to the Deposition of Silicon Nitride Films
GB1264163A (en) * 1968-04-18 1972-02-16
US4410559A (en) * 1980-10-31 1983-10-18 Yoshihiro Hamakawa Method of forming amorphous silicon films
US4634635A (en) * 1983-09-30 1987-01-06 Kabushiki Kaisha Toshiba Black ornament
US4572841A (en) * 1984-12-28 1986-02-25 Rca Corporation Low temperature method of deposition silicon dioxide
GB2175137A (en) * 1985-05-13 1986-11-19 Mobil Solar Energy Corp Hydrogen passivation of polysilicon
US5037514A (en) * 1986-01-06 1991-08-06 Semiconductor Energy Laboratory Co., Ltd. Silicon oxide depositing method
WO1988004333A1 (en) * 1986-12-10 1988-06-16 The British Petroleum Company P.L.C. Production of silicon carbide
EP0422243A1 (en) * 1989-03-31 1991-04-17 Canon Kabushiki Kaisha Method of forming polycrystalline film by chemical vapor deposition
WO1990015018A1 (en) * 1989-06-05 1990-12-13 Sumitomo Precision Products Company Limited Coated dielectric material for an ozone generator

Also Published As

Publication number Publication date
GB2267291A (en) 1993-12-01
GB9211242D0 (en) 1992-07-08

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee