GB2321765B - Method of plasma etching - Google Patents
Method of plasma etchingInfo
- Publication number
- GB2321765B GB2321765B GB9802082A GB9802082A GB2321765B GB 2321765 B GB2321765 B GB 2321765B GB 9802082 A GB9802082 A GB 9802082A GB 9802082 A GB9802082 A GB 9802082A GB 2321765 B GB2321765 B GB 2321765B
- Authority
- GB
- United Kingdom
- Prior art keywords
- plasma etching
- etching
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title 1
- 238000001020 plasma etching Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
- H01J37/32165—Plural frequencies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
- H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9016788A JPH10214822A (en) | 1997-01-30 | 1997-01-30 | Plasma etching device and etching method |
Publications (3)
Publication Number | Publication Date |
---|---|
GB9802082D0 GB9802082D0 (en) | 1998-03-25 |
GB2321765A GB2321765A (en) | 1998-08-05 |
GB2321765B true GB2321765B (en) | 1999-07-28 |
Family
ID=11925927
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB9802082A Expired - Fee Related GB2321765B (en) | 1997-01-30 | 1998-01-30 | Method of plasma etching |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPH10214822A (en) |
KR (1) | KR19980070940A (en) |
CN (1) | CN1191463A (en) |
GB (1) | GB2321765B (en) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100317915B1 (en) * | 1999-03-22 | 2001-12-22 | 윤종용 | Apparatus for plasma etching |
KR20020091430A (en) * | 2001-05-30 | 2002-12-06 | 사단법인 고등기술연구원 연구조합 | Plasma electric discharging system by using circularly polarized cavity mode |
US7547635B2 (en) * | 2002-06-14 | 2009-06-16 | Lam Research Corporation | Process for etching dielectric films with improved resist and/or etch profile characteristics |
JP3860078B2 (en) * | 2002-06-21 | 2006-12-20 | 株式会社日立ハイテクノロジーズ | High frequency power supply apparatus for plasma generating apparatus and control method thereof |
US7431857B2 (en) * | 2003-08-15 | 2008-10-07 | Applied Materials, Inc. | Plasma generation and control using a dual frequency RF source |
US7405521B2 (en) * | 2003-08-22 | 2008-07-29 | Lam Research Corporation | Multiple frequency plasma processor method and apparatus |
CN102446738A (en) * | 2011-11-29 | 2012-05-09 | 上海华力微电子有限公司 | Plasma etching device |
CN104409309B (en) * | 2014-12-01 | 2016-09-21 | 逢甲大学 | Large area plasma processing means generates method with homogeneous plasma |
CN108899275B (en) * | 2018-07-20 | 2021-03-02 | 北京北方华创微电子装备有限公司 | Plasma etching method |
CN109273341B (en) | 2018-10-18 | 2021-01-08 | 北京北方华创微电子装备有限公司 | Plasma process method |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0188206A2 (en) * | 1985-01-17 | 1986-07-23 | International Business Machines Corporation | System for generating a substantially uniform plasma |
JPH03153028A (en) * | 1989-11-10 | 1991-07-01 | Seiko Epson Corp | Manufacture of semiconductor device |
JPH07142199A (en) * | 1993-11-17 | 1995-06-02 | Tokyo Electron Ltd | Plasma treatment device and its control method |
WO1997037518A1 (en) * | 1996-03-29 | 1997-10-09 | Lam Research Corporation | Methods and apparatuses for controlling phase difference in plasma processing systems |
US5698062A (en) * | 1993-11-05 | 1997-12-16 | Tokyo Electron Limited | Plasma treatment apparatus and method |
-
1997
- 1997-01-30 JP JP9016788A patent/JPH10214822A/en active Pending
-
1998
- 1998-01-26 CN CN98100083A patent/CN1191463A/en active Pending
- 1998-01-30 GB GB9802082A patent/GB2321765B/en not_active Expired - Fee Related
- 1998-01-30 KR KR1019980002562A patent/KR19980070940A/en not_active Application Discontinuation
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0188206A2 (en) * | 1985-01-17 | 1986-07-23 | International Business Machines Corporation | System for generating a substantially uniform plasma |
JPH03153028A (en) * | 1989-11-10 | 1991-07-01 | Seiko Epson Corp | Manufacture of semiconductor device |
US5698062A (en) * | 1993-11-05 | 1997-12-16 | Tokyo Electron Limited | Plasma treatment apparatus and method |
JPH07142199A (en) * | 1993-11-17 | 1995-06-02 | Tokyo Electron Ltd | Plasma treatment device and its control method |
WO1997037518A1 (en) * | 1996-03-29 | 1997-10-09 | Lam Research Corporation | Methods and apparatuses for controlling phase difference in plasma processing systems |
Non-Patent Citations (1)
Title |
---|
Patent Abstracts of Japan, Vol 15, No 383 [E-1116] & JP 03 153 028 A * |
Also Published As
Publication number | Publication date |
---|---|
GB9802082D0 (en) | 1998-03-25 |
JPH10214822A (en) | 1998-08-11 |
GB2321765A (en) | 1998-08-05 |
KR19980070940A (en) | 1998-10-26 |
CN1191463A (en) | 1998-08-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
732E | Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977) | ||
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20050130 |