DE69942372D1 - Plasmaätzverfahren - Google Patents
PlasmaätzverfahrenInfo
- Publication number
- DE69942372D1 DE69942372D1 DE69942372T DE69942372T DE69942372D1 DE 69942372 D1 DE69942372 D1 DE 69942372D1 DE 69942372 T DE69942372 T DE 69942372T DE 69942372 T DE69942372 T DE 69942372T DE 69942372 D1 DE69942372 D1 DE 69942372D1
- Authority
- DE
- Germany
- Prior art keywords
- plasma etching
- etching
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000001020 plasma etching Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32697—Electrostatic control
- H01J37/32706—Polarising the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP31994298A JP4153606B2 (ja) | 1998-10-22 | 1998-10-22 | プラズマエッチング方法およびプラズマエッチング装置 |
PCT/JP1999/005821 WO2000024046A1 (fr) | 1998-10-22 | 1999-10-22 | Procede d'attaque au plasma |
Publications (1)
Publication Number | Publication Date |
---|---|
DE69942372D1 true DE69942372D1 (de) | 2010-06-24 |
Family
ID=18115972
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69942372T Expired - Lifetime DE69942372D1 (de) | 1998-10-22 | 1999-10-22 | Plasmaätzverfahren |
Country Status (6)
Country | Link |
---|---|
US (1) | US6793832B1 (de) |
EP (1) | EP1143496B1 (de) |
JP (1) | JP4153606B2 (de) |
KR (1) | KR100590370B1 (de) |
DE (1) | DE69942372D1 (de) |
WO (1) | WO2000024046A1 (de) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100327346B1 (ko) * | 1999-07-20 | 2002-03-06 | 윤종용 | 선택적 폴리머 증착을 이용한 플라즈마 식각방법 및 이를이용한 콘택홀 형성방법 |
KR20020017182A (ko) * | 2000-08-29 | 2002-03-07 | 윤종용 | 옥타플루오로부텐으로 이루어지는 식각 가스를 이용한반도체 소자의 제조방법 |
DE10053780A1 (de) * | 2000-10-30 | 2002-05-16 | Infineon Technologies Ag | Verfahren zur Strukturierung einer Siliziumoxid-Schicht |
US7169695B2 (en) * | 2002-10-11 | 2007-01-30 | Lam Research Corporation | Method for forming a dual damascene structure |
KR100517075B1 (ko) | 2003-08-11 | 2005-09-26 | 삼성전자주식회사 | 반도체 소자 제조 방법 |
KR100656708B1 (ko) | 2005-04-01 | 2006-12-13 | 주식회사 에이디피엔지니어링 | 플라즈마 처리장치 |
JP4653603B2 (ja) * | 2005-09-13 | 2011-03-16 | 株式会社日立ハイテクノロジーズ | プラズマエッチング方法 |
US7488687B2 (en) | 2006-09-12 | 2009-02-10 | Samsung Electronics Co., Ltd. | Methods of forming electrical interconnect structures using polymer residues to increase etching selectivity through dielectric layers |
US7491343B2 (en) | 2006-09-14 | 2009-02-17 | Lam Research Corporation | Line end shortening reduction during etch |
US7407597B2 (en) * | 2006-09-14 | 2008-08-05 | Lam Research Corporation | Line end shortening reduction during etch |
US7547636B2 (en) * | 2007-02-05 | 2009-06-16 | Lam Research Corporation | Pulsed ultra-high aspect ratio dielectric etch |
US7771606B2 (en) * | 2007-02-22 | 2010-08-10 | Applied Materials, Inc. | Pulsed-plasma system with pulsed reaction gas replenish for etching semiconductors structures |
US7718538B2 (en) * | 2007-02-21 | 2010-05-18 | Applied Materials, Inc. | Pulsed-plasma system with pulsed sample bias for etching semiconductor substrates |
US7737042B2 (en) * | 2007-02-22 | 2010-06-15 | Applied Materials, Inc. | Pulsed-plasma system for etching semiconductor structures |
CN101636813B (zh) * | 2007-03-12 | 2013-02-27 | 艾克斯特朗股份公司 | 具有改善的处理能力的等离子体系统 |
US7846846B2 (en) * | 2007-09-25 | 2010-12-07 | Applied Materials, Inc. | Method of preventing etch profile bending and bowing in high aspect ratio openings by treating a polymer formed on the opening sidewalls |
JP5268625B2 (ja) * | 2008-12-26 | 2013-08-21 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
KR101037043B1 (ko) * | 2009-02-27 | 2011-05-26 | 성균관대학교산학협력단 | 반도체 기판의 비아 형성방법 |
US9478408B2 (en) | 2014-06-06 | 2016-10-25 | Lam Research Corporation | Systems and methods for removing particles from a substrate processing chamber using RF plasma cycling and purging |
US10047438B2 (en) | 2014-06-10 | 2018-08-14 | Lam Research Corporation | Defect control and stability of DC bias in RF plasma-based substrate processing systems using molecular reactive purge gas |
US10081869B2 (en) | 2014-06-10 | 2018-09-25 | Lam Research Corporation | Defect control in RF plasma substrate processing systems using DC bias voltage during movement of substrates |
CN105719965A (zh) * | 2014-12-04 | 2016-06-29 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 二氧化硅基片的刻蚀方法和刻蚀设备 |
JP6504827B2 (ja) * | 2015-01-16 | 2019-04-24 | 東京エレクトロン株式会社 | エッチング方法 |
US9691625B2 (en) * | 2015-11-04 | 2017-06-27 | Lam Research Corporation | Methods and systems for plasma etching using bi-modal process gas composition responsive to plasma power level |
JP6833657B2 (ja) | 2017-11-07 | 2021-02-24 | 東京エレクトロン株式会社 | 基板をプラズマエッチングする方法 |
JP2019212777A (ja) * | 2018-06-05 | 2019-12-12 | 東京エレクトロン株式会社 | 成膜用組成物および成膜装置 |
JP2019212776A (ja) * | 2018-06-05 | 2019-12-12 | 東京エレクトロン株式会社 | 成膜用組成物および成膜装置 |
US10593518B1 (en) * | 2019-02-08 | 2020-03-17 | Applied Materials, Inc. | Methods and apparatus for etching semiconductor structures |
WO2021090516A1 (ja) * | 2019-11-08 | 2021-05-14 | 東京エレクトロン株式会社 | エッチング方法 |
US11456180B2 (en) | 2019-11-08 | 2022-09-27 | Tokyo Electron Limited | Etching method |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4855017A (en) * | 1985-05-03 | 1989-08-08 | Texas Instruments Incorporated | Trench etch process for a single-wafer RIE dry etch reactor |
KR900007687B1 (ko) * | 1986-10-17 | 1990-10-18 | 가부시기가이샤 히다찌세이사꾸쇼 | 플라즈마처리방법 및 장치 |
JP2918892B2 (ja) * | 1988-10-14 | 1999-07-12 | 株式会社日立製作所 | プラズマエッチング処理方法 |
US5888414A (en) | 1991-06-27 | 1999-03-30 | Applied Materials, Inc. | Plasma reactor and processes using RF inductive coupling and scavenger temperature control |
DE69226253T2 (de) * | 1992-01-24 | 1998-12-17 | Applied Materials Inc | Plasmaätzverfahren und Reaktor zur Plasmabearbeitung |
JP2625072B2 (ja) | 1992-09-08 | 1997-06-25 | アプライド マテリアルズ インコーポレイテッド | 電磁rf結合を用いたプラズマ反応装置及びその方法 |
US5573597A (en) * | 1995-06-07 | 1996-11-12 | Sony Corporation | Plasma processing system with reduced particle contamination |
ATE251341T1 (de) | 1996-08-01 | 2003-10-15 | Surface Technology Systems Plc | Verfahren zur ätzung von substraten |
-
1998
- 1998-10-22 JP JP31994298A patent/JP4153606B2/ja not_active Expired - Lifetime
-
1999
- 1999-10-22 KR KR1020017004885A patent/KR100590370B1/ko active IP Right Grant
- 1999-10-22 WO PCT/JP1999/005821 patent/WO2000024046A1/ja active IP Right Grant
- 1999-10-22 US US09/807,896 patent/US6793832B1/en not_active Expired - Lifetime
- 1999-10-22 EP EP99949351A patent/EP1143496B1/de not_active Expired - Lifetime
- 1999-10-22 DE DE69942372T patent/DE69942372D1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP1143496B1 (de) | 2010-05-12 |
KR20010080234A (ko) | 2001-08-22 |
WO2000024046A1 (fr) | 2000-04-27 |
JP2000133638A (ja) | 2000-05-12 |
JP4153606B2 (ja) | 2008-09-24 |
KR100590370B1 (ko) | 2006-06-15 |
EP1143496A4 (de) | 2006-12-13 |
US6793832B1 (en) | 2004-09-21 |
EP1143496A1 (de) | 2001-10-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |