JP2019212777A - 成膜用組成物および成膜装置 - Google Patents
成膜用組成物および成膜装置 Download PDFInfo
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
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- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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- H01L21/02107—Forming insulating materials on a substrate
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
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Abstract
Description
本発明の実施形態に係る成膜用組成物は、互いに重合して含窒素カルボニル化合物を生成する第1成分と第2成分とを有し、前記第1成分の分子構造と前記第2成分の分子構造とが非対称である。
本実施形態の成膜用組成物において、第1成分と第2成分と重合して生成される含窒素カルボニル化合物は、炭素−酸素の二重結合と窒素を含有する重合体である。含窒素カルボニル化合物は、第1成分と第2成分と重合により成膜された膜の成分を構成する。含窒素カルボニル化合物は、このような重合体の膜として、例えば、ウエハの特定の部位がエッチングされることを防ぐための保護膜となり得る。
本実施形態の成膜用組成物に含まれる第1成分は、第2成分と重合して含窒素カルボニル化合物を生成し得るもモノマーである。このような第1成分は、特に限定されないが、例えば、イソシアネート、アミン、酸無水物、カルボン酸、アルコール等が挙げられる。これらの第1成分は、本発明に係る成膜用組成物に含まれる第1成分の一例である。
本実施形態の成膜用組成物に含まれる第2成分は、第1成分と重合して含窒素カルボニル化合物を生成し得るモノマーである。このような第2成分は、特に限定されないが、例えば、イソシアネート、アミン、酸無水物、カルボン酸、アルコール等が挙げられる。これらの第2成分は、本発明に係る成膜用組成物に含まれる第2成分の一例である。
次に、本発明の実施形態に係る成膜装置1について、図1の断面図を参照しながら説明する。本実施形態の成膜装置1は、真空雰囲気が形成される処理容器11と、処理容器11内に設けられた、基板(ウエハW)を載置する載置部(載置台21)と、上述の成膜用組成物(成膜ガス)を処理容器11内に供給する供給部(ガスノズル41)とを有する。なお、成膜装置1は、本発明に係る成膜装置の一例である。
図7に示す成膜装置101を用いて、重合体の膜を成膜した。具体的には、処理容器11内にウエハWを載置し、室温で成膜ガス(第1成分M1と第2成分M2を有する成膜用組成物)を供給して、ウエハWに重合体の膜を成膜した。成膜は4枚のウエハWに対して同時に行った。ウエハWには、直径300mmのシリコンウエハを用いた。
重合体の膜を成膜したウエハWを、窒素雰囲気のホットプレート(図示せず)に入れて、250℃で5分間、加熱処理した。
光学式薄膜及びスキャトロメトリ(OCD)測定装置(装置名「n&k Analyser」、n&k Technology社製)を用いて、ウエハWに成膜した重合体の熱処理前後の膜の表面を、暗視野により観察した。暗視野観察により、光散乱が確認された場合は、膜荒れ(結晶化)が生じたものと評価した。なお、評価は、膜の表面を暗視野で撮影した写真(図8、図9で図化したもの)を用いて行った。図8、図9において、斑点が示された部分は光散乱が生じていることを示し、白地部分は光散乱が生じていないことを示す。
第1成分M1として1,3−ビス(イソシアナトメチル)シクロヘキサン(H6XDI)を供給し、第2成分M2として1,3−ビス(アミノメチル)シクロヘキサン(H6XDA)を供給して、ウエハWに重合体の膜を成膜した。第1成分M1を構成するH6XDIは、第2成分M2を構成するH6XDAは、いずれもシス−トランス異性体が存在する化合物である。実施例1について、熱処理前後の膜の表面を評価した。結果を表1および図8に示す。
第1成分M1としてH6XDIに替えて1,3−ビス(イソシアナトメチル)ベンゼン(XDI)を供給し、第2成分M2としてH6XDAに替えて1,3−ビス(アミノメチル)ベンゼン(XDA)を供給した以外は、実施例1と同様に成膜し、評価した。XDIおよびXDAは、いずれもメタ配向性の芳香族化合物である。結果を表1に示す。
1 成膜装置
11 処理容器
21 載置台
20 ステージヒーター
31 排気口
41 ガスノズル
60 配管ヒーター
Claims (9)
- 互いに重合して含窒素カルボニル化合物を生成する第1成分と第2成分とを有し、
前記第1成分の分子構造と前記第2成分の分子構造とが非対称である、成膜用組成物。 - 前記含窒素カルボニル化合物は、ポリウレア、ポリウレタン、ポリアミド、ポリイミドから選ばれる少なくとも1種である、請求項1に記載の成膜用組成物。
- 前記第1成分および前記第2成分の少なくともいずれかは、イソシアネート、アミン、酸無水物、カルボン酸、およびアルコールのいずれか1種である、請求項1または2に記載の成膜用組成物。
- 前記第1成分および前記第2成分の少なくともいずれかは、芳香族化合物、キシレン系化合物、脂環族化合物、脂肪族化合物から選ばれる少なくとも1種である、請求項3に記載の成膜用組成物。
- 前記第1成分および前記第2成分の少なくともいずれかは、1官能性化合物または2官能性化合物である、請求項3または4に記載の成膜用組成物。
- 前記第1成分および前記第2成分のいずれか一方がイソシアネートであり、
前記第1成分および前記第2成分のいずれか他方がアミンである、請求項3乃至5のいずれか1項に記載の成膜用組成物。 - 前記イソシアネートは、2官能性脂環族化合物である、請求項6に記載の成膜用組成物。
- 前記アミンは、2官能性脂環族化合物である、請求項6または7に記載の成膜用組成物。
- 真空雰囲気が形成される処理容器と、
前記処理容器内に設けられた基板を載置する載置部と、
請求項1乃至8のいずれか1項に記載の成膜用組成物を前記処理容器内に供給する供給部とを有する、成膜装置。
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US16/645,951 US20200277512A1 (en) | 2018-06-05 | 2019-05-24 | Composition for film deposition and film deposition apparatus |
PCT/JP2019/020631 WO2019235257A1 (ja) | 2018-06-05 | 2019-05-24 | 成膜用組成物および成膜装置 |
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000133638A (ja) * | 1998-10-22 | 2000-05-12 | Tokyo Electron Ltd | プラズマエッチング方法およびプラズマエッチング装置 |
JP2006523030A (ja) * | 2003-04-09 | 2006-10-05 | ラム リサーチ コーポレーション | ガス化学反応の周期的変調を用いたプラズマエッチング方法 |
JP2009049141A (ja) * | 2007-08-17 | 2009-03-05 | Tokyo Electron Ltd | 半導体装置の製造方法及び記憶媒体 |
JP2013247285A (ja) * | 2012-05-28 | 2013-12-09 | Tokyo Electron Ltd | 成膜方法 |
JP2018022925A (ja) * | 2016-07-21 | 2018-02-08 | 東京エレクトロン株式会社 | 半導体装置の製造方法、真空処理装置及び基板処理装置 |
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000133638A (ja) * | 1998-10-22 | 2000-05-12 | Tokyo Electron Ltd | プラズマエッチング方法およびプラズマエッチング装置 |
JP2006523030A (ja) * | 2003-04-09 | 2006-10-05 | ラム リサーチ コーポレーション | ガス化学反応の周期的変調を用いたプラズマエッチング方法 |
JP2009049141A (ja) * | 2007-08-17 | 2009-03-05 | Tokyo Electron Ltd | 半導体装置の製造方法及び記憶媒体 |
JP2013247285A (ja) * | 2012-05-28 | 2013-12-09 | Tokyo Electron Ltd | 成膜方法 |
JP2018022925A (ja) * | 2016-07-21 | 2018-02-08 | 東京エレクトロン株式会社 | 半導体装置の製造方法、真空処理装置及び基板処理装置 |
Non-Patent Citations (1)
Title |
---|
飯島正行, 高橋善和: "蒸着重合技術 —分子オーダ構造制御の有機機能薄膜形成—", 応用物理, vol. 第66巻, 第10号, JPN6019031440, 1997, pages 1084 - 1088, ISSN: 0004695354 * |
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