JP2021068879A - 基板処理方法および基板処理システム - Google Patents
基板処理方法および基板処理システム Download PDFInfo
- Publication number
- JP2021068879A JP2021068879A JP2019195652A JP2019195652A JP2021068879A JP 2021068879 A JP2021068879 A JP 2021068879A JP 2019195652 A JP2019195652 A JP 2019195652A JP 2019195652 A JP2019195652 A JP 2019195652A JP 2021068879 A JP2021068879 A JP 2021068879A
- Authority
- JP
- Japan
- Prior art keywords
- region
- substrate
- chemical bond
- bond
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 229
- 238000003672 processing method Methods 0.000 title claims abstract description 50
- 239000000126 substance Substances 0.000 claims abstract description 188
- 239000000463 material Substances 0.000 claims abstract description 93
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 54
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 54
- 239000004202 carbamide Substances 0.000 claims description 49
- 238000000034 method Methods 0.000 claims description 36
- 238000011282 treatment Methods 0.000 claims description 29
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 21
- -1 nitrogen-containing carbonyl compound Chemical class 0.000 claims description 21
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 21
- 150000004985 diamines Chemical class 0.000 claims description 19
- 238000005530 etching Methods 0.000 claims description 15
- 230000001678 irradiating effect Effects 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 abstract description 14
- 239000007789 gas Substances 0.000 description 142
- 229920002396 Polyurea Polymers 0.000 description 41
- 230000007246 mechanism Effects 0.000 description 35
- 239000012948 isocyanate Substances 0.000 description 26
- 150000002513 isocyanates Chemical class 0.000 description 21
- 230000008016 vaporization Effects 0.000 description 21
- 238000009834 vaporization Methods 0.000 description 19
- 238000010438 heat treatment Methods 0.000 description 15
- 229910004298 SiO 2 Inorganic materials 0.000 description 14
- 229920006254 polymer film Polymers 0.000 description 14
- 125000005442 diisocyanate group Chemical group 0.000 description 13
- 238000006243 chemical reaction Methods 0.000 description 11
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 10
- 230000001681 protective effect Effects 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 125000003277 amino group Chemical group 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 230000003028 elevating effect Effects 0.000 description 7
- 238000011144 upstream manufacturing Methods 0.000 description 7
- 230000001965 increasing effect Effects 0.000 description 6
- 229920000642 polymer Polymers 0.000 description 6
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 6
- 125000004429 atom Chemical group 0.000 description 5
- 238000010494 dissociation reaction Methods 0.000 description 5
- 230000005593 dissociations Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 125000000951 phenoxy group Chemical group [H]C1=C([H])C([H])=C(O*)C([H])=C1[H] 0.000 description 3
- 238000010926 purge Methods 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- UHNUHZHQLCGZDA-UHFFFAOYSA-N 4-[2-(4-aminophenyl)ethyl]aniline Chemical compound C1=CC(N)=CC=C1CCC1=CC=C(N)C=C1 UHNUHZHQLCGZDA-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 2
- 229910008051 Si-OH Inorganic materials 0.000 description 2
- 229910006358 Si—OH Inorganic materials 0.000 description 2
- 150000004984 aromatic diamines Chemical class 0.000 description 2
- VHRGRCVQAFMJIZ-UHFFFAOYSA-N cadaverine Chemical compound NCCCCCN VHRGRCVQAFMJIZ-UHFFFAOYSA-N 0.000 description 2
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 2
- JXCHMDATRWUOAP-UHFFFAOYSA-N diisocyanatomethylbenzene Chemical compound O=C=NC(N=C=O)C1=CC=CC=C1 JXCHMDATRWUOAP-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- BKIMMITUMNQMOS-UHFFFAOYSA-N nonane Chemical compound CCCCCCCCC BKIMMITUMNQMOS-UHFFFAOYSA-N 0.000 description 2
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 2
- KIDHWZJUCRJVML-UHFFFAOYSA-N putrescine Chemical compound NCCCCN KIDHWZJUCRJVML-UHFFFAOYSA-N 0.000 description 2
- XFNJVJPLKCPIBV-UHFFFAOYSA-N trimethylenediamine Chemical compound NCCCN XFNJVJPLKCPIBV-UHFFFAOYSA-N 0.000 description 2
- NSGXIBWMJZWTPY-UHFFFAOYSA-N 1,1,1,3,3,3-hexafluoropropane Chemical compound FC(F)(F)CC(F)(F)F NSGXIBWMJZWTPY-UHFFFAOYSA-N 0.000 description 1
- QWUWMCYKGHVNAV-UHFFFAOYSA-N 1,2-dihydrostilbene Chemical group C=1C=CC=CC=1CCC1=CC=CC=C1 QWUWMCYKGHVNAV-UHFFFAOYSA-N 0.000 description 1
- ZTNJGMFHJYGMDR-UHFFFAOYSA-N 1,2-diisocyanatoethane Chemical compound O=C=NCCN=C=O ZTNJGMFHJYGMDR-UHFFFAOYSA-N 0.000 description 1
- GEYOCULIXLDCMW-UHFFFAOYSA-N 1,2-phenylenediamine Chemical compound NC1=CC=CC=C1N GEYOCULIXLDCMW-UHFFFAOYSA-N 0.000 description 1
- VZXTWGWHSMCWGA-UHFFFAOYSA-N 1,3,5-triazine-2,4-diamine Chemical compound NC1=NC=NC(N)=N1 VZXTWGWHSMCWGA-UHFFFAOYSA-N 0.000 description 1
- BWTPUFNHSVZIDT-UHFFFAOYSA-N 1,3-bis[2-(4-aminophenyl)ethyl]urea Chemical compound C1=CC(N)=CC=C1CCNC(=O)NCCC1=CC=C(N)C=C1 BWTPUFNHSVZIDT-UHFFFAOYSA-N 0.000 description 1
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 description 1
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 1
- VWBVCOPVKXNMMZ-UHFFFAOYSA-N 1,5-diaminoanthracene-9,10-dione Chemical compound O=C1C2=C(N)C=CC=C2C(=O)C2=C1C=CC=C2N VWBVCOPVKXNMMZ-UHFFFAOYSA-N 0.000 description 1
- YFOOEYJGMMJJLS-UHFFFAOYSA-N 1,8-diaminonaphthalene Chemical compound C1=CC(N)=C2C(N)=CC=CC2=C1 YFOOEYJGMMJJLS-UHFFFAOYSA-N 0.000 description 1
- PWGJDPKCLMLPJW-UHFFFAOYSA-N 1,8-diaminooctane Chemical compound NCCCCCCCCN PWGJDPKCLMLPJW-UHFFFAOYSA-N 0.000 description 1
- PYWYAAZCDBLBAN-UHFFFAOYSA-N 1-isocyanato-2-[2-(2-isocyanatophenyl)propan-2-yl]benzene Chemical compound C=1C=CC=C(N=C=O)C=1C(C)(C)C1=CC=CC=C1N=C=O PYWYAAZCDBLBAN-UHFFFAOYSA-N 0.000 description 1
- VOSLIUIVGWBSOK-UHFFFAOYSA-N 1-n-phenylbenzene-1,2,4-triamine Chemical compound NC1=CC(N)=CC=C1NC1=CC=CC=C1 VOSLIUIVGWBSOK-UHFFFAOYSA-N 0.000 description 1
- KGRVJHAUYBGFFP-UHFFFAOYSA-N 2,2'-Methylenebis(4-methyl-6-tert-butylphenol) Chemical compound CC(C)(C)C1=CC(C)=CC(CC=2C(=C(C=C(C)C=2)C(C)(C)C)O)=C1O KGRVJHAUYBGFFP-UHFFFAOYSA-N 0.000 description 1
- DDHUNHGZUHZNKB-UHFFFAOYSA-N 2,2-dimethylpropane-1,3-diamine Chemical compound NCC(C)(C)CN DDHUNHGZUHZNKB-UHFFFAOYSA-N 0.000 description 1
- RPUVITOGCTVKMO-UHFFFAOYSA-N 2,3-diisocyanato-1-methylnaphthalene Chemical compound C1=CC=C2C(C)=C(N=C=O)C(N=C=O)=CC2=C1 RPUVITOGCTVKMO-UHFFFAOYSA-N 0.000 description 1
- IFFLKGMDBKQMAH-UHFFFAOYSA-N 2,4-diaminopyridine Chemical compound NC1=CC=NC(N)=C1 IFFLKGMDBKQMAH-UHFFFAOYSA-N 0.000 description 1
- VOZKAJLKRJDJLL-UHFFFAOYSA-N 2,4-diaminotoluene Chemical compound CC1=CC=C(N)C=C1N VOZKAJLKRJDJLL-UHFFFAOYSA-N 0.000 description 1
- 229940075142 2,5-diaminotoluene Drugs 0.000 description 1
- QAYVHDDEMLNVMO-UHFFFAOYSA-N 2,5-dichlorobenzene-1,4-diamine Chemical compound NC1=CC(Cl)=C(N)C=C1Cl QAYVHDDEMLNVMO-UHFFFAOYSA-N 0.000 description 1
- BWAPJIHJXDYDPW-UHFFFAOYSA-N 2,5-dimethyl-p-phenylenediamine Chemical group CC1=CC(N)=C(C)C=C1N BWAPJIHJXDYDPW-UHFFFAOYSA-N 0.000 description 1
- XGKKWUNSNDTGDS-UHFFFAOYSA-N 2,5-dimethylheptane-1,7-diamine Chemical compound NCC(C)CCC(C)CCN XGKKWUNSNDTGDS-UHFFFAOYSA-N 0.000 description 1
- YXOKJIRTNWHPFS-UHFFFAOYSA-N 2,5-dimethylhexane-1,6-diamine Chemical compound NCC(C)CCC(C)CN YXOKJIRTNWHPFS-UHFFFAOYSA-N 0.000 description 1
- OBCSAIDCZQSFQH-UHFFFAOYSA-N 2-methyl-1,4-phenylenediamine Chemical compound CC1=CC(N)=CC=C1N OBCSAIDCZQSFQH-UHFFFAOYSA-N 0.000 description 1
- XDFQCCVUKOQKQD-UHFFFAOYSA-N 3,4-diisocyanato-2-methylpyridine Chemical compound N(=C=O)C1=C(C(=NC=C1)C)N=C=O XDFQCCVUKOQKQD-UHFFFAOYSA-N 0.000 description 1
- KPKOSOUTWDOOIW-UHFFFAOYSA-N 3,5-bis(4-aminophenoxy)benzoic acid Chemical compound C1=CC(N)=CC=C1OC1=CC(OC=2C=CC(N)=CC=2)=CC(C(O)=O)=C1 KPKOSOUTWDOOIW-UHFFFAOYSA-N 0.000 description 1
- UENRXLSRMCSUSN-UHFFFAOYSA-N 3,5-diaminobenzoic acid Chemical compound NC1=CC(N)=CC(C(O)=O)=C1 UENRXLSRMCSUSN-UHFFFAOYSA-N 0.000 description 1
- LJQFYBCLMVVNAQ-UHFFFAOYSA-N 3-(2-aminoethyl)aniline Chemical compound NCCC1=CC=CC(N)=C1 LJQFYBCLMVVNAQ-UHFFFAOYSA-N 0.000 description 1
- LJGHYPLBDBRCRZ-UHFFFAOYSA-N 3-(3-aminophenyl)sulfonylaniline Chemical compound NC1=CC=CC(S(=O)(=O)C=2C=C(N)C=CC=2)=C1 LJGHYPLBDBRCRZ-UHFFFAOYSA-N 0.000 description 1
- LPCINXWHNYBINL-UHFFFAOYSA-N 3-(3-aminopropyl)aniline Chemical compound NCCCC1=CC=CC(N)=C1 LPCINXWHNYBINL-UHFFFAOYSA-N 0.000 description 1
- LIMMUKMKUYFDIW-UHFFFAOYSA-N 3-(4-aminobutyl)aniline Chemical compound NCCCCC1=CC=CC(N)=C1 LIMMUKMKUYFDIW-UHFFFAOYSA-N 0.000 description 1
- ZBMISJGHVWNWTE-UHFFFAOYSA-N 3-(4-aminophenoxy)aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=CC(N)=C1 ZBMISJGHVWNWTE-UHFFFAOYSA-N 0.000 description 1
- NISGEPOVWWUNLB-UHFFFAOYSA-N 3-(5-aminopentyl)aniline Chemical compound NCCCCCC1=CC=CC(N)=C1 NISGEPOVWWUNLB-UHFFFAOYSA-N 0.000 description 1
- RNLHGQLZWXBQNY-UHFFFAOYSA-N 3-(aminomethyl)-3,5,5-trimethylcyclohexan-1-amine Chemical compound CC1(C)CC(N)CC(C)(CN)C1 RNLHGQLZWXBQNY-UHFFFAOYSA-N 0.000 description 1
- ZDBWYUOUYNQZBM-UHFFFAOYSA-N 3-(aminomethyl)aniline Chemical compound NCC1=CC=CC(N)=C1 ZDBWYUOUYNQZBM-UHFFFAOYSA-N 0.000 description 1
- HBLPYXIZPMDWIO-UHFFFAOYSA-N 3-(methylaminomethyl)aniline Chemical compound CNCC1=CC=CC(N)=C1 HBLPYXIZPMDWIO-UHFFFAOYSA-N 0.000 description 1
- CKOFBUUFHALZGK-UHFFFAOYSA-N 3-[(3-aminophenyl)methyl]aniline Chemical compound NC1=CC=CC(CC=2C=C(N)C=CC=2)=C1 CKOFBUUFHALZGK-UHFFFAOYSA-N 0.000 description 1
- FGWQCROGAHMWSU-UHFFFAOYSA-N 3-[(4-aminophenyl)methyl]aniline Chemical compound C1=CC(N)=CC=C1CC1=CC=CC(N)=C1 FGWQCROGAHMWSU-UHFFFAOYSA-N 0.000 description 1
- UVUCUHVQYAPMEU-UHFFFAOYSA-N 3-[2-(3-aminophenyl)-1,1,1,3,3,3-hexafluoropropan-2-yl]aniline Chemical compound NC1=CC=CC(C(C=2C=C(N)C=CC=2)(C(F)(F)F)C(F)(F)F)=C1 UVUCUHVQYAPMEU-UHFFFAOYSA-N 0.000 description 1
- POTQBGGWSWSMCX-UHFFFAOYSA-N 3-[2-(3-aminopropoxy)ethoxy]propan-1-amine Chemical compound NCCCOCCOCCCN POTQBGGWSWSMCX-UHFFFAOYSA-N 0.000 description 1
- HLPDWKADNKYPEI-UHFFFAOYSA-N 3-[2-(methylamino)ethyl]aniline Chemical compound CNCCC1=CC=CC(N)=C1 HLPDWKADNKYPEI-UHFFFAOYSA-N 0.000 description 1
- DKKYOQYISDAQER-UHFFFAOYSA-N 3-[3-(3-aminophenoxy)phenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=C(OC=3C=C(N)C=CC=3)C=CC=2)=C1 DKKYOQYISDAQER-UHFFFAOYSA-N 0.000 description 1
- XGQOUNRKDKNBOC-UHFFFAOYSA-N 3-[3-(methylamino)propyl]aniline Chemical compound CNCCCC1=CC=CC(N)=C1 XGQOUNRKDKNBOC-UHFFFAOYSA-N 0.000 description 1
- GHTNUVUDNKDAES-UHFFFAOYSA-N 3-[4-(methylamino)butyl]aniline Chemical compound CNCCCCC1=CC=CC(N)=C1 GHTNUVUDNKDAES-UHFFFAOYSA-N 0.000 description 1
- WCXGOVYROJJXHA-UHFFFAOYSA-N 3-[4-[4-(3-aminophenoxy)phenyl]sulfonylphenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=CC(=CC=2)S(=O)(=O)C=2C=CC(OC=3C=C(N)C=CC=3)=CC=2)=C1 WCXGOVYROJJXHA-UHFFFAOYSA-N 0.000 description 1
- NQIXOLQSTCNTKL-UHFFFAOYSA-N 3-[5-(methylamino)pentyl]aniline Chemical compound CNCCCCCC1=CC=CC(N)=C1 NQIXOLQSTCNTKL-UHFFFAOYSA-N 0.000 description 1
- SGEWZUYVXQESSB-UHFFFAOYSA-N 3-methylheptane-1,7-diamine Chemical compound NCCC(C)CCCCN SGEWZUYVXQESSB-UHFFFAOYSA-N 0.000 description 1
- UPMLOUAZCHDJJD-UHFFFAOYSA-N 4,4'-Diphenylmethane Diisocyanate Chemical compound C1=CC(N=C=O)=CC=C1CC1=CC=C(N=C=O)C=C1 UPMLOUAZCHDJJD-UHFFFAOYSA-N 0.000 description 1
- WECDUOXQLAIPQW-UHFFFAOYSA-N 4,4'-Methylene bis(2-methylaniline) Chemical compound C1=C(N)C(C)=CC(CC=2C=C(C)C(N)=CC=2)=C1 WECDUOXQLAIPQW-UHFFFAOYSA-N 0.000 description 1
- ICNFHJVPAJKPHW-UHFFFAOYSA-N 4,4'-Thiodianiline Chemical compound C1=CC(N)=CC=C1SC1=CC=C(N)C=C1 ICNFHJVPAJKPHW-UHFFFAOYSA-N 0.000 description 1
- YBRVSVVVWCFQMG-UHFFFAOYSA-N 4,4'-diaminodiphenylmethane Chemical compound C1=CC(N)=CC=C1CC1=CC=C(N)C=C1 YBRVSVVVWCFQMG-UHFFFAOYSA-N 0.000 description 1
- ZWIBGDOHXGXHEV-UHFFFAOYSA-N 4,4-dimethylheptane-1,7-diamine Chemical compound NCCCC(C)(C)CCCN ZWIBGDOHXGXHEV-UHFFFAOYSA-N 0.000 description 1
- LNPMZQXEPNWCMG-UHFFFAOYSA-N 4-(2-aminoethyl)aniline Chemical compound NCCC1=CC=C(N)C=C1 LNPMZQXEPNWCMG-UHFFFAOYSA-N 0.000 description 1
- OMNVECQLILUEFL-UHFFFAOYSA-N 4-(3-aminopropyl)aniline Chemical compound NCCCC1=CC=C(N)C=C1 OMNVECQLILUEFL-UHFFFAOYSA-N 0.000 description 1
- QYIMZXITLDTULQ-UHFFFAOYSA-N 4-(4-amino-2-methylphenyl)-3-methylaniline Chemical compound CC1=CC(N)=CC=C1C1=CC=C(N)C=C1C QYIMZXITLDTULQ-UHFFFAOYSA-N 0.000 description 1
- PHPXSWXCZWIGBS-UHFFFAOYSA-N 4-(4-aminobutyl)aniline Chemical compound NCCCCC1=CC=C(N)C=C1 PHPXSWXCZWIGBS-UHFFFAOYSA-N 0.000 description 1
- ZKHSQOFXDNNEGD-UHFFFAOYSA-N 4-(5-aminopentyl)aniline Chemical compound NCCCCCC1=CC=C(N)C=C1 ZKHSQOFXDNNEGD-UHFFFAOYSA-N 0.000 description 1
- BFWYZZPDZZGSLJ-UHFFFAOYSA-N 4-(aminomethyl)aniline Chemical compound NCC1=CC=C(N)C=C1 BFWYZZPDZZGSLJ-UHFFFAOYSA-N 0.000 description 1
- FTAMTADBFJSWRE-UHFFFAOYSA-N 4-(methylaminomethyl)aniline Chemical compound CNCC1=CC=C(N)C=C1 FTAMTADBFJSWRE-UHFFFAOYSA-N 0.000 description 1
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 description 1
- ZWUBBMDHSZDNTA-UHFFFAOYSA-N 4-Chloro-meta-phenylenediamine Chemical compound NC1=CC=C(Cl)C(N)=C1 ZWUBBMDHSZDNTA-UHFFFAOYSA-N 0.000 description 1
- DZIHTWJGPDVSGE-UHFFFAOYSA-N 4-[(4-aminocyclohexyl)methyl]cyclohexan-1-amine Chemical compound C1CC(N)CCC1CC1CCC(N)CC1 DZIHTWJGPDVSGE-UHFFFAOYSA-N 0.000 description 1
- ZRZCNDIPIZYLSC-UHFFFAOYSA-N 4-[(4-aminophenoxy)methoxy]aniline Chemical compound C1=CC(N)=CC=C1OCOC1=CC=C(N)C=C1 ZRZCNDIPIZYLSC-UHFFFAOYSA-N 0.000 description 1
- ZSQIQUAKDNTQOI-UHFFFAOYSA-N 4-[1-(4-aminophenyl)cyclohexyl]aniline Chemical compound C1=CC(N)=CC=C1C1(C=2C=CC(N)=CC=2)CCCCC1 ZSQIQUAKDNTQOI-UHFFFAOYSA-N 0.000 description 1
- NGMJQNYIDZLGFP-UHFFFAOYSA-N 4-[10-(4-aminophenoxy)decoxy]aniline Chemical compound C1=CC(N)=CC=C1OCCCCCCCCCCOC1=CC=C(N)C=C1 NGMJQNYIDZLGFP-UHFFFAOYSA-N 0.000 description 1
- MEKBJJDSFDITCS-UHFFFAOYSA-N 4-[10-(4-aminophenyl)decyl]aniline Chemical compound C1=CC(N)=CC=C1CCCCCCCCCCC1=CC=C(N)C=C1 MEKBJJDSFDITCS-UHFFFAOYSA-N 0.000 description 1
- ISESBQNCWCFFFR-UHFFFAOYSA-N 4-[2-(4-amino-2-methylphenyl)ethyl]-3-methylaniline Chemical group CC1=CC(N)=CC=C1CCC1=CC=C(N)C=C1C ISESBQNCWCFFFR-UHFFFAOYSA-N 0.000 description 1
- KOGDFDWINXIWHI-UHFFFAOYSA-N 4-[2-(4-aminophenyl)ethenyl]aniline Chemical compound C1=CC(N)=CC=C1C=CC1=CC=C(N)C=C1 KOGDFDWINXIWHI-UHFFFAOYSA-N 0.000 description 1
- NNIPOYNUFNLQMO-UHFFFAOYSA-N 4-[2-(methylamino)ethyl]aniline Chemical compound CNCCC1=CC=C(N)C=C1 NNIPOYNUFNLQMO-UHFFFAOYSA-N 0.000 description 1
- HESXPOICBNWMPI-UHFFFAOYSA-N 4-[2-[4-[2-(4-aminophenyl)propan-2-yl]phenyl]propan-2-yl]aniline Chemical compound C=1C=C(C(C)(C)C=2C=CC(N)=CC=2)C=CC=1C(C)(C)C1=CC=C(N)C=C1 HESXPOICBNWMPI-UHFFFAOYSA-N 0.000 description 1
- HPUJEBAZZTZOFL-UHFFFAOYSA-N 4-[3-(4-aminophenoxy)-2,2-dimethylpropoxy]aniline Chemical compound C=1C=C(N)C=CC=1OCC(C)(C)COC1=CC=C(N)C=C1 HPUJEBAZZTZOFL-UHFFFAOYSA-N 0.000 description 1
- WUPRYUDHUFLKFL-UHFFFAOYSA-N 4-[3-(4-aminophenoxy)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=CC(OC=2C=CC(N)=CC=2)=C1 WUPRYUDHUFLKFL-UHFFFAOYSA-N 0.000 description 1
- KWFFEQXPFFDJER-UHFFFAOYSA-N 4-[3-(4-aminophenoxy)propoxy]aniline Chemical compound C1=CC(N)=CC=C1OCCCOC1=CC=C(N)C=C1 KWFFEQXPFFDJER-UHFFFAOYSA-N 0.000 description 1
- BMIUMBLWVWZIHD-UHFFFAOYSA-N 4-[3-(4-aminophenyl)propyl]aniline Chemical compound C1=CC(N)=CC=C1CCCC1=CC=C(N)C=C1 BMIUMBLWVWZIHD-UHFFFAOYSA-N 0.000 description 1
- ZFMLLVBCHBKYCJ-UHFFFAOYSA-N 4-[3-(methylamino)propyl]aniline Chemical compound CNCCCC1=CC=C(N)C=C1 ZFMLLVBCHBKYCJ-UHFFFAOYSA-N 0.000 description 1
- LAFZPVANKKJENB-UHFFFAOYSA-N 4-[4-(4-aminophenoxy)butoxy]aniline Chemical compound C1=CC(N)=CC=C1OCCCCOC1=CC=C(N)C=C1 LAFZPVANKKJENB-UHFFFAOYSA-N 0.000 description 1
- JCRRFJIVUPSNTA-UHFFFAOYSA-N 4-[4-(4-aminophenoxy)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC(C=C1)=CC=C1OC1=CC=C(N)C=C1 JCRRFJIVUPSNTA-UHFFFAOYSA-N 0.000 description 1
- QBHDKNHTWRFDGO-UHFFFAOYSA-N 4-[4-(methylamino)butyl]aniline Chemical compound CNCCCCC1=CC=C(N)C=C1 QBHDKNHTWRFDGO-UHFFFAOYSA-N 0.000 description 1
- DPDYBERBCHCODD-UHFFFAOYSA-N 4-[4-[10-[4-(4-aminophenoxy)phenoxy]decoxy]phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC(C=C1)=CC=C1OCCCCCCCCCCOC(C=C1)=CC=C1OC1=CC=C(N)C=C1 DPDYBERBCHCODD-UHFFFAOYSA-N 0.000 description 1
- HHLMWQDRYZAENA-UHFFFAOYSA-N 4-[4-[2-[4-(4-aminophenoxy)phenyl]-1,1,1,3,3,3-hexafluoropropan-2-yl]phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=C(C(C=2C=CC(OC=3C=CC(N)=CC=3)=CC=2)(C(F)(F)F)C(F)(F)F)C=C1 HHLMWQDRYZAENA-UHFFFAOYSA-N 0.000 description 1
- KMKWGXGSGPYISJ-UHFFFAOYSA-N 4-[4-[2-[4-(4-aminophenoxy)phenyl]propan-2-yl]phenoxy]aniline Chemical compound C=1C=C(OC=2C=CC(N)=CC=2)C=CC=1C(C)(C)C(C=C1)=CC=C1OC1=CC=C(N)C=C1 KMKWGXGSGPYISJ-UHFFFAOYSA-N 0.000 description 1
- HSDAXNMOGHTBPQ-UHFFFAOYSA-N 4-[4-[3-[4-(4-aminophenoxy)phenoxy]propoxy]phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC(C=C1)=CC=C1OCCCOC(C=C1)=CC=C1OC1=CC=C(N)C=C1 HSDAXNMOGHTBPQ-UHFFFAOYSA-N 0.000 description 1
- UTDAGHZGKXPRQI-UHFFFAOYSA-N 4-[4-[4-(4-aminophenoxy)phenyl]sulfonylphenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=C(S(=O)(=O)C=2C=CC(OC=3C=CC(N)=CC=3)=CC=2)C=C1 UTDAGHZGKXPRQI-UHFFFAOYSA-N 0.000 description 1
- HOSAKYKXQPBPFJ-UHFFFAOYSA-N 4-[4-[4-[4-(4-aminophenoxy)phenoxy]butoxy]phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC(C=C1)=CC=C1OCCCCOC(C=C1)=CC=C1OC1=CC=C(N)C=C1 HOSAKYKXQPBPFJ-UHFFFAOYSA-N 0.000 description 1
- ZUBYRLIOGYHFCP-UHFFFAOYSA-N 4-[4-[5-[4-(4-aminophenoxy)phenoxy]pentoxy]phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC(C=C1)=CC=C1OCCCCCOC(C=C1)=CC=C1OC1=CC=C(N)C=C1 ZUBYRLIOGYHFCP-UHFFFAOYSA-N 0.000 description 1
- KBVPANOLXOGZDY-UHFFFAOYSA-N 4-[4-[6-[4-(4-aminophenoxy)phenoxy]hexoxy]phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC(C=C1)=CC=C1OCCCCCCOC(C=C1)=CC=C1OC1=CC=C(N)C=C1 KBVPANOLXOGZDY-UHFFFAOYSA-N 0.000 description 1
- PWMAGDIHKLEZLO-UHFFFAOYSA-N 4-[4-[7-[4-(4-aminophenoxy)phenoxy]heptoxy]phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC(C=C1)=CC=C1OCCCCCCCOC(C=C1)=CC=C1OC1=CC=C(N)C=C1 PWMAGDIHKLEZLO-UHFFFAOYSA-N 0.000 description 1
- GGEQMFKXDPQHML-UHFFFAOYSA-N 4-[4-[8-[4-(4-aminophenoxy)phenoxy]octoxy]phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC(C=C1)=CC=C1OCCCCCCCCOC(C=C1)=CC=C1OC1=CC=C(N)C=C1 GGEQMFKXDPQHML-UHFFFAOYSA-N 0.000 description 1
- SLHXQWDUYXSTPA-UHFFFAOYSA-N 4-[5-(4-aminophenoxy)pentoxy]aniline Chemical compound C1=CC(N)=CC=C1OCCCCCOC1=CC=C(N)C=C1 SLHXQWDUYXSTPA-UHFFFAOYSA-N 0.000 description 1
- MJZXFMSIHMJQBW-UHFFFAOYSA-N 4-[5-(4-aminophenyl)-1,3,4-oxadiazol-2-yl]aniline Chemical compound C1=CC(N)=CC=C1C1=NN=C(C=2C=CC(N)=CC=2)O1 MJZXFMSIHMJQBW-UHFFFAOYSA-N 0.000 description 1
- SOKDIHGREPWQCY-UHFFFAOYSA-N 4-[5-(4-aminophenyl)pentyl]aniline Chemical compound C1=CC(N)=CC=C1CCCCCC1=CC=C(N)C=C1 SOKDIHGREPWQCY-UHFFFAOYSA-N 0.000 description 1
- LQLKUPAZZXUBTB-UHFFFAOYSA-N 4-[5-(methylamino)pentyl]aniline Chemical compound CNCCCCCC1=CC=C(N)C=C1 LQLKUPAZZXUBTB-UHFFFAOYSA-N 0.000 description 1
- GRFCDFDVGOXFPY-UHFFFAOYSA-N 4-[6-(4-aminophenoxy)hexoxy]aniline Chemical compound C1=CC(N)=CC=C1OCCCCCCOC1=CC=C(N)C=C1 GRFCDFDVGOXFPY-UHFFFAOYSA-N 0.000 description 1
- XLKGPJIGDHZIMW-UHFFFAOYSA-N 4-[6-(4-aminophenyl)hexyl]aniline Chemical compound C1=CC(N)=CC=C1CCCCCCC1=CC=C(N)C=C1 XLKGPJIGDHZIMW-UHFFFAOYSA-N 0.000 description 1
- JBXBSFFXAMVASC-UHFFFAOYSA-N 4-[7-(4-aminophenoxy)heptoxy]aniline Chemical compound C1=CC(N)=CC=C1OCCCCCCCOC1=CC=C(N)C=C1 JBXBSFFXAMVASC-UHFFFAOYSA-N 0.000 description 1
- JXPFXZXQRFXJAK-UHFFFAOYSA-N 4-[7-(4-aminophenyl)heptyl]aniline Chemical compound C1=CC(N)=CC=C1CCCCCCCC1=CC=C(N)C=C1 JXPFXZXQRFXJAK-UHFFFAOYSA-N 0.000 description 1
- SURHEQARWKWZMT-UHFFFAOYSA-N 4-[8-(4-aminophenoxy)octoxy]aniline Chemical compound C1=CC(N)=CC=C1OCCCCCCCCOC1=CC=C(N)C=C1 SURHEQARWKWZMT-UHFFFAOYSA-N 0.000 description 1
- YJPXABVNBBJWSP-UHFFFAOYSA-N 4-[8-(4-aminophenyl)octyl]aniline Chemical compound C1=CC(N)=CC=C1CCCCCCCCC1=CC=C(N)C=C1 YJPXABVNBBJWSP-UHFFFAOYSA-N 0.000 description 1
- DFXGPEKKMXWHQU-UHFFFAOYSA-N 4-[9-(4-aminophenoxy)nonoxy]aniline Chemical compound C1=CC(N)=CC=C1OCCCCCCCCCOC1=CC=C(N)C=C1 DFXGPEKKMXWHQU-UHFFFAOYSA-N 0.000 description 1
- KIFDSGGWDIVQGN-UHFFFAOYSA-N 4-[9-(4-aminophenyl)fluoren-9-yl]aniline Chemical compound C1=CC(N)=CC=C1C1(C=2C=CC(N)=CC=2)C2=CC=CC=C2C2=CC=CC=C21 KIFDSGGWDIVQGN-UHFFFAOYSA-N 0.000 description 1
- FIIGXVURROMCRR-UHFFFAOYSA-N 4-[9-(4-aminophenyl)nonyl]aniline Chemical compound C1=CC(N)=CC=C1CCCCCCCCCC1=CC=C(N)C=C1 FIIGXVURROMCRR-UHFFFAOYSA-N 0.000 description 1
- QZHXKQKKEBXYRG-UHFFFAOYSA-N 4-n-(4-aminophenyl)benzene-1,4-diamine Chemical compound C1=CC(N)=CC=C1NC1=CC=C(N)C=C1 QZHXKQKKEBXYRG-UHFFFAOYSA-N 0.000 description 1
- GVXJJTXNJGGQIV-UHFFFAOYSA-N 5-(2-aminoethyl)naphthalen-2-amine Chemical compound NC1=CC=C2C(CCN)=CC=CC2=C1 GVXJJTXNJGGQIV-UHFFFAOYSA-N 0.000 description 1
- LVNDUJYMLJDECN-UHFFFAOYSA-N 5-methylbenzene-1,3-diamine Chemical compound CC1=CC(N)=CC(N)=C1 LVNDUJYMLJDECN-UHFFFAOYSA-N 0.000 description 1
- MBRGOFWKNLPACT-UHFFFAOYSA-N 5-methylnonane-1,9-diamine Chemical compound NCCCCC(C)CCCCN MBRGOFWKNLPACT-UHFFFAOYSA-N 0.000 description 1
- OOEGQLPPMITCBZ-UHFFFAOYSA-N 6-propan-2-yl-1,3,5-triazine-2,4-diamine Chemical compound CC(C)C1=NC(N)=NC(N)=N1 OOEGQLPPMITCBZ-UHFFFAOYSA-N 0.000 description 1
- YCZUWQOJQGCZKG-UHFFFAOYSA-N 9h-carbazole-3,6-diamine Chemical compound C1=C(N)C=C2C3=CC(N)=CC=C3NC2=C1 YCZUWQOJQGCZKG-UHFFFAOYSA-N 0.000 description 1
- SNCJAJRILVFXAE-UHFFFAOYSA-N 9h-fluorene-2,7-diamine Chemical compound NC1=CC=C2C3=CC=C(N)C=C3CC2=C1 SNCJAJRILVFXAE-UHFFFAOYSA-N 0.000 description 1
- 0 CC(CN(C(Nc(cc1)ccc1N)(NC1=CC=CC(N)=CC1)N(/C1=C/C=C/C(/N(C(*)NC2CCCCC2)N)=C\C=C1)N)c1cccc(N(C(N(C2CCCCCC2)N)=O)N)c1)=O Chemical compound CC(CN(C(Nc(cc1)ccc1N)(NC1=CC=CC(N)=CC1)N(/C1=C/C=C/C(/N(C(*)NC2CCCCC2)N)=C\C=C1)N)c1cccc(N(C(N(C2CCCCCC2)N)=O)N)c1)=O 0.000 description 1
- UEVSBSYUNQZBTB-OAQYLSRUSA-N CC[C@@H](C)N(C(NC1=CC=CC(N)=CC=C1)=O)C1=CCC(N(C(NC2CCCCCC2)=O)N)=CC=C1 Chemical compound CC[C@@H](C)N(C(NC1=CC=CC(N)=CC=C1)=O)C1=CCC(N(C(NC2CCCCCC2)=O)N)=CC=C1 UEVSBSYUNQZBTB-OAQYLSRUSA-N 0.000 description 1
- MQJKPEGWNLWLTK-UHFFFAOYSA-N Dapsone Chemical compound C1=CC(N)=CC=C1S(=O)(=O)C1=CC=C(N)C=C1 MQJKPEGWNLWLTK-UHFFFAOYSA-N 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- DCQDZXTTZFYQHK-UHFFFAOYSA-N Nc(cc1)ccc1NCN(C1=CCC(N(C(N(C2CCCCCC2)N)O)N)=CC=C1)N Chemical compound Nc(cc1)ccc1NCN(C1=CCC(N(C(N(C2CCCCCC2)N)O)N)=CC=C1)N DCQDZXTTZFYQHK-UHFFFAOYSA-N 0.000 description 1
- RMUCZJUITONUFY-UHFFFAOYSA-N Phenelzine Chemical compound NNCCC1=CC=CC=C1 RMUCZJUITONUFY-UHFFFAOYSA-N 0.000 description 1
- 239000005700 Putrescine Substances 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical compound COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- HFACYLZERDEVSX-UHFFFAOYSA-N benzidine Chemical compound C1=CC(N)=CC=C1C1=CC=C(N)C=C1 HFACYLZERDEVSX-UHFFFAOYSA-N 0.000 description 1
- YMXKKAMHFCWWNZ-UHFFFAOYSA-N bis(4-aminophenyl) butanedioate Chemical compound C1=CC(N)=CC=C1OC(=O)CCC(=O)OC1=CC=C(N)C=C1 YMXKKAMHFCWWNZ-UHFFFAOYSA-N 0.000 description 1
- GOKWZXBYDWJEEX-UHFFFAOYSA-N bis(4-aminophenyl) decanedioate Chemical compound C1=CC(N)=CC=C1OC(=O)CCCCCCCCC(=O)OC1=CC=C(N)C=C1 GOKWZXBYDWJEEX-UHFFFAOYSA-N 0.000 description 1
- IYZXLVMHFBPTFS-UHFFFAOYSA-N bis(4-aminophenyl) heptanedioate Chemical compound C1=CC(N)=CC=C1OC(=O)CCCCCC(=O)OC1=CC=C(N)C=C1 IYZXLVMHFBPTFS-UHFFFAOYSA-N 0.000 description 1
- AIQVJNFIUNHSOB-UHFFFAOYSA-N bis(4-aminophenyl) hexanedioate Chemical compound C1=CC(N)=CC=C1OC(=O)CCCCC(=O)OC1=CC=C(N)C=C1 AIQVJNFIUNHSOB-UHFFFAOYSA-N 0.000 description 1
- WIQCJWYOACZYRI-UHFFFAOYSA-N bis(4-aminophenyl) nonanedioate Chemical compound C1=CC(N)=CC=C1OC(=O)CCCCCCCC(=O)OC1=CC=C(N)C=C1 WIQCJWYOACZYRI-UHFFFAOYSA-N 0.000 description 1
- ABJJAQHJNDNNIN-UHFFFAOYSA-N bis(4-aminophenyl) octanedioate Chemical compound C1=CC(N)=CC=C1OC(=O)CCCCCCC(=O)OC1=CC=C(N)C=C1 ABJJAQHJNDNNIN-UHFFFAOYSA-N 0.000 description 1
- ZOIYKZIJKIJRCY-UHFFFAOYSA-N bis(4-aminophenyl) pentanedioate Chemical compound C1=CC(N)=CC=C1OC(=O)CCCC(=O)OC1=CC=C(N)C=C1 ZOIYKZIJKIJRCY-UHFFFAOYSA-N 0.000 description 1
- NTOUEMVDNNZRJH-UHFFFAOYSA-N bis(4-aminophenyl) propanedioate Chemical compound C1=CC(N)=CC=C1OC(=O)CC(=O)OC1=CC=C(N)C=C1 NTOUEMVDNNZRJH-UHFFFAOYSA-N 0.000 description 1
- ZLSMCQSGRWNEGX-UHFFFAOYSA-N bis(4-aminophenyl)methanone Chemical compound C1=CC(N)=CC=C1C(=O)C1=CC=C(N)C=C1 ZLSMCQSGRWNEGX-UHFFFAOYSA-N 0.000 description 1
- 239000001273 butane Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- GEQHKFFSPGPGLN-UHFFFAOYSA-N cyclohexane-1,3-diamine Chemical compound NC1CCCC(N)C1 GEQHKFFSPGPGLN-UHFFFAOYSA-N 0.000 description 1
- VKIRRGRTJUUZHS-UHFFFAOYSA-N cyclohexane-1,4-diamine Chemical compound NC1CCC(N)CC1 VKIRRGRTJUUZHS-UHFFFAOYSA-N 0.000 description 1
- KQWGXHWJMSMDJJ-UHFFFAOYSA-N cyclohexyl isocyanate Chemical compound O=C=NC1CCCCC1 KQWGXHWJMSMDJJ-UHFFFAOYSA-N 0.000 description 1
- YQLZOAVZWJBZSY-UHFFFAOYSA-N decane-1,10-diamine Chemical compound NCCCCCCCCCCN YQLZOAVZWJBZSY-UHFFFAOYSA-N 0.000 description 1
- YCDUMXSNRLISHV-UHFFFAOYSA-N dibenzofuran-2,7-diamine Chemical compound C1=C(N)C=C2C3=CC=C(N)C=C3OC2=C1 YCDUMXSNRLISHV-UHFFFAOYSA-N 0.000 description 1
- 239000000539 dimer Substances 0.000 description 1
- QFTYSVGGYOXFRQ-UHFFFAOYSA-N dodecane-1,12-diamine Chemical compound NCCCCCCCCCCCCN QFTYSVGGYOXFRQ-UHFFFAOYSA-N 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- PWSKHLMYTZNYKO-UHFFFAOYSA-N heptane-1,7-diamine Chemical compound NCCCCCCCN PWSKHLMYTZNYKO-UHFFFAOYSA-N 0.000 description 1
- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- NIMLQBUJDJZYEJ-UHFFFAOYSA-N isophorone diisocyanate Chemical compound CC1(C)CC(N=C=O)CC(C)(CN=C=O)C1 NIMLQBUJDJZYEJ-UHFFFAOYSA-N 0.000 description 1
- 229940018564 m-phenylenediamine Drugs 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 1
- KQSABULTKYLFEV-UHFFFAOYSA-N naphthalene-1,5-diamine Chemical compound C1=CC=C2C(N)=CC=CC2=C1N KQSABULTKYLFEV-UHFFFAOYSA-N 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- SXJVFQLYZSNZBT-UHFFFAOYSA-N nonane-1,9-diamine Chemical compound NCCCCCCCCCN SXJVFQLYZSNZBT-UHFFFAOYSA-N 0.000 description 1
- CJYCVQJRVSAFKB-UHFFFAOYSA-N octadecane-1,18-diamine Chemical compound NCCCCCCCCCCCCCCCCCCN CJYCVQJRVSAFKB-UHFFFAOYSA-N 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- WOFKFNZIJZWWPZ-UHFFFAOYSA-N pyrene-1,3-diamine Chemical compound C1=C2C(N)=CC(N)=C(C=C3)C2=C2C3=CC=CC2=C1 WOFKFNZIJZWWPZ-UHFFFAOYSA-N 0.000 description 1
- OWJJRQSAIMYXQJ-UHFFFAOYSA-N pyrene-1,6-diamine Chemical compound C1=C2C(N)=CC=C(C=C3)C2=C2C3=C(N)C=CC2=C1 OWJJRQSAIMYXQJ-UHFFFAOYSA-N 0.000 description 1
- BLYOXQBERINFDU-UHFFFAOYSA-N pyrene-1,8-diamine Chemical compound C1=C2C(N)=CC=C(C=C3)C2=C2C3=CC=C(N)C2=C1 BLYOXQBERINFDU-UHFFFAOYSA-N 0.000 description 1
- VHNQIURBCCNWDN-UHFFFAOYSA-N pyridine-2,6-diamine Chemical compound NC1=CC=CC(N)=N1 VHNQIURBCCNWDN-UHFFFAOYSA-N 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
- UHUUYVZLXJHWDV-UHFFFAOYSA-N trimethyl(methylsilyloxy)silane Chemical compound C[SiH2]O[Si](C)(C)C UHUUYVZLXJHWDV-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
- C23C16/0236—Pretreatment of the material to be coated by cleaning or etching by etching with a reactive gas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/047—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/32—Processes for applying liquids or other fluent materials using means for protecting parts of a surface not to be coated, e.g. using stencils, resists
- B05D1/322—Removable films used as masks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/60—Deposition of organic layers from vapour phase
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D2503/00—Polyurethanes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/02—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by baking
- B05D3/0254—After-treatment
- B05D3/0272—After-treatment with ovens
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/06—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation
- B05D3/061—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation using U.V.
- B05D3/065—After-treatment
- B05D3/067—Curing or cross-linking the coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/10—Applying interconnections to be used for carrying current between separate components within a device
- H01L2221/1005—Formation and after-treatment of dielectrics
- H01L2221/1052—Formation of thin functional dielectric layers
- H01L2221/1057—Formation of thin functional dielectric layers in via holes or trenches
- H01L2221/1063—Sacrificial or temporary thin dielectric films in openings in a dielectric
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Formation Of Insulating Films (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
図1は、本開示に係る基板処理方法の第1実施形態を示すフローチャートである。図2〜図4は、第1実施形態により成膜材料が供給される前から成膜材料が供給された後に温度が調整されるまでの、第1領域と第2領域を有する基板のイメージ図である。
ン、4,4'−ジアミノ−3,3'−ジメチルジフェニルメタン、2,2'−ジアミノスチルベン、4,4'−ジアミノスチルベン、4,4'−ジアミノジフェニルエーテル、3,4'−ジアミノジフェニルエーテル、4,4'−ジアミノジフェニルスルフィド、4,4'−ジアミノジフェニルスルホン、3,3'−ジアミノジフェニルスルホン、4,4'−ジアミノベンゾフェノン、1,3−ビス(3−アミノフェノキシ)ベンゼン、1,3−ビス(4−アミノフェノキシ)ベンゼン、1,4−ビス(4−アミノフェノキシ)ベンゼン、3,5−ビス(4−アミノフェノキシ)安息香酸、4,4'−ビス(4−アミノフェノキシ)ビベンジル、2,2−ビス[(4−アミノフェノキシ)メチル]プロパン、2,2−ビス[4−(4−アミノフェノキシ)フェニル]ヘキサフロロプロパン、2,2−ビス[4−(4−アミノフェノキシ)フェニル]プロパン、ビス[4−(3−アミノフェノキシ)フェニル]スルホン、ビス[4−(4−アミノフェノキシ)フェニル]スルホン、1,1−ビス(4−アミノフェニル)シクロヘキサン、α、α'−ビス(4−アミノフェニル)−1,4−ジイソプロピルベンゼン、9,9−ビス(4−アミノフェニル)フルオレン、2,2−ビス(3−アミノフェニル)ヘキサフロロプロパン、2,2−ビス(4−アミノフェニル)ヘキサフロロプロパン、4,4'−ジアミノジフェニルアミン、2,4−ジアミノジフェニルアミン、1,8−ジアミノナフタレン、1,5−ジアミノナフタレン、1,5−ジアミノアントラキノン、1,3−ジアミノピレン、1,6−ジアミノピレン、1,8−ジアミノピレン、2,7−ジアミノフルオレン、1,3−ビス(4−アミノフェニル)テトラメチルジシロキサン、ベンジジン、2,2'−ジメチルベンジジン、1,2−ビス(4−アミノフェニル)エタン、1,3−ビス(4−アミノフェニル)プロパン、1,4−ビス(4−アミノフェニル)ブタン、1,5−ビス(4−アミノフェニル)ペンタン、1,6−ビス(4−アミノフェニル)ヘキサン、1,7−ビス(4−アミノフェニル)ヘプタン、1,8−ビス(4−アミノフェニル)オクタン、1,9−ビス(4−アミノフェニル)ノナン、1,10−ビス(4−アミノフェニル)デカン、ビス(4−アミノフェノキシ)メタン、1,2−ビス(4−アミノフェノキシ)エタン、1,3−ビス(4−アミノフェノキシ)プロパン、1,4−ビス(4−アミノフェノキシ)ブタン、1,5−ビス(4−アミノフェノキシ)ペンタン、1,6−ビス(4−アミノフェノキシ)ヘキサン、1,7−ビス(4−アミノフェノキシ)ヘプタン、1,8−ビス(4−アミノフェノキシ)オクタン、1,9−ビス(4−アミノフェノキシ)ノナン、1,10−ビス(4−アミノフェノキシ)デカン、ジ(4−アミノフェニル)プロパン−1,3−ジオエート、ジ(4−アミノフェニル)ブタン−1,4−ジオエート、ジ(4−アミノフェニル)ペンタン−1,5−ジオエート、ジ(4−アミノフェニル)ヘキサン−1,6−ジオエート、ジ(4−アミノフェニル)ヘプタン−1,7−ジオエート、ジ(4−アミノフェニル)オクタン−1,8−ジオエート、ジ(4−アミノフェニル)ノナン−1,9−ジオエート、ジ(4−アミノフェニル)デカン−1,10−ジオエート、1,3−ビス〔4−(4−アミノフェノキシ)フェノキシ〕プロパン、1,4−ビス〔4−(4−アミノフェノキシ)フェノキシ〕ブタン、1,5−ビス〔4−(4−アミノフェノキシ)フェノキシ〕ペンタン、1,6−ビス〔4−(4−アミノフェノキシ)フェノキシ〕ヘキサン、1,7−ビス〔4−(4−アミノフェノキシ)フェノキシ〕ヘプタン、1,8−ビス〔4−(4−アミノフェノキシ)フェノキシ〕オクタン、1,9−ビス〔4−(4−アミノフェノキシ)フェノキシ〕ノナン、1,10−ビス〔4−(4−アミノフェノキシ)フェノキシ〕デカン等が挙げられる。
本開示に係る基板処理システムは、真空雰囲気が形成される処理容器と、前記処理容器内に設けられて、基板が載置される載置部と、前記基板表面にエネルギーを供給するエネルギー源と、前記基板表面に成膜材料を供給する第1供給部と、制御部と、を有し、前記制御部は、a)表面に第1領域と第2領域とを有する基板を提供する工程と、b)前記第1供給部により、前記第1領域に第1化学結合を形成し且つ前記第2領域に前記第1化学結合より結合エネルギーが低い第2化学結合を形成する成膜材料を前記基板表面に供給する工程と、c)前記エネルギー源により、前記第1化学結合の結合エネルギーより低く前記第2化学結合の結合エネルギーより高いエネルギーを前記基板表面に供給することにより、前記第1領域に選択的に膜を形成する工程と、を含む処理を実行する。
(1)被処理基板PBを約40℃〜100℃に加熱する。
(2)上述の成膜材料M1(ジイソシアネート)を被処理基板PB上に供給して、第1領域R1に第1化学結合(ウレア結合)を形成し、第2領域R2に第2化学結合(ウレタン結合)を形成する。
(3)被処理基板PBを約200℃に加熱し、第2領域の第2化学結合のみ分解し、第1領域R1に分解しない第1化学結合を残す。
(4)上述の処理材料M2(ジアミン)を被処理基板PBに供給して、第1領域R1に形成された第1化学結合(ウレア結合)の末端にN末端(アミノ基)を形成する。
(5)上記(1)〜(4)を繰り返して、ポリウレアの膜を形成する。
(6)ポリウレアの膜にUVを照射して、ポリウレアの膜を架橋する。
これにより、被処理基板PB上の第1領域R1の表面の一部FEに架橋ポリウレアの膜(以下、ポリマーの膜という)PFが形成(成膜)される(図19参照)。
1 基板処理装置
10 チャンバー
20 載置台
30 排気口
40 ガスノズル
50 UVランプ
60 第1成分供給機構
70 第2成分供給機構
80 ガス供給管
90 コンピュータ
PB 被処理基板
R1 第1領域
R2 第2領域
PF ポリマーの膜(保護膜)
Claims (14)
- a)表面に第1領域と第2領域とを有する基板を提供する工程と、
b)前記第1領域に第1化学結合を形成し且つ前記第2領域に前記第1化学結合より結合エネルギーが低い第2化学結合を形成する成膜材料を前記基板表面に供給する工程と、
c)前記第1化学結合の結合エネルギーより低く前記第2化学結合の結合エネルギーより高いエネルギーを前記基板表面に供給することにより、前記第1領域に選択的に膜を形成する工程と、
を含む、基板処理方法。 - 前記c)において、前記基板表面の温度を前記第1化学結合が切断される温度より低く前記第2化学結合が切断される温度以上の温度に調整することにより、前記基板表面に前記エネルギーを供給する、請求項1に記載の基板処理方法。
- 前記第1領域は、窒化シリコンで形成され、
前記第2領域は、酸化シリコンで形成されている、請求項1または2に記載の基板処理方法。 - 前記第1化学結合が、ウレア結合であり、
前記第2化学結合が、ウレタン結合である、請求項1乃至3のいずれか1項に記載の基板処理方法。 - 前記成膜材料が、窒素含有カルボニル化合物である、請求項1乃至4のいずれか1項に記載の基板処理方法。
- d)前記c)の後に、前記第1化学結合の末端に前記第1化学結合がさらに形成されるように前記末端を処理する処理材料を前記基板表面に供給する工程を含む、請求項1乃至5のいずれか1項に記載の基板処理方法。
- 前記処理材料が、ジアミンである、請求項6に記載の基板処理方法。
- e)前記d)の後に、前記基板表面に紫外線を照射する工程を含む、請求項6または7のいずれか1項に記載の基板処理方法。
- f)前記膜により前記第1領域に対して選択的に前記第2領域をエッチングする工程を含む、請求項1乃至8のいずれか1項に記載の基板処理方法。
- 真空雰囲気が形成される処理容器と、
前記処理容器内に設けられて、基板が載置される載置部と、
前記基板表面にエネルギーを供給するエネルギー源と、
前記基板表面に成膜材料を供給する第1供給部と、
制御部と、
を有し、
前記制御部は、
a)表面に第1領域と第2領域とを有する基板を提供する工程と、
b)前記第1供給部により、前記第1領域に第1化学結合を形成し且つ前記第2領域に前記第1化学結合より結合エネルギーが低い第2化学結合を形成する成膜材料を前記基板表面に供給する工程と、
c)前記エネルギー源により、前記第1化学結合の結合エネルギーより低く前記第2化学結合の結合エネルギーより高いエネルギーを前記基板表面に供給することにより、前記第1領域に選択的に膜を形成する工程と、
を含む処理を実行する、基板処理システム。 - 前記エネルギー源は、前記載置部に設けられたヒーターである、請求項10に記載の基板処理システム。
- 前記制御部は、
前記ヒーターにより、前記c)において、前記載置部の温度を前記第1化学結合が切断される温度より低く且つ前記第2化学結合が切断される温度以上の温度に調整する、請求項11に記載の基板処理システム。 - 基板表面に処理材料を供給する第2供給部をさらに有し、
前記制御部は、
d)前記c)の後、前記第2供給部により、前記第1化学結合の末端に前記第1化学結合がさらに形成されるように前記末端を処理する処理材料を供給する工程をさらに含む処理を実行する、請求項11または12に記載の基板処理システム。 - 前記基板表面に紫外線を照射する紫外線照射部を有し、
前記制御部は、
e)前記d)の後に、前記紫外線照射部により、前記基板表面に紫外線を照射する工程をさらに含む処理を実行する、請求項13に記載の基板処理システム。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019195652A JP7433016B2 (ja) | 2019-10-28 | 2019-10-28 | 基板処理方法および基板処理システム |
US17/078,275 US11456184B2 (en) | 2019-10-28 | 2020-10-23 | Substrate processing method and substrate processing system |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019195652A JP7433016B2 (ja) | 2019-10-28 | 2019-10-28 | 基板処理方法および基板処理システム |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021068879A true JP2021068879A (ja) | 2021-04-30 |
JP7433016B2 JP7433016B2 (ja) | 2024-02-19 |
Family
ID=75586278
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019195652A Active JP7433016B2 (ja) | 2019-10-28 | 2019-10-28 | 基板処理方法および基板処理システム |
Country Status (2)
Country | Link |
---|---|
US (1) | US11456184B2 (ja) |
JP (1) | JP7433016B2 (ja) |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009256796A (ja) * | 2008-03-27 | 2009-11-05 | Horiba Ltd | 単分子膜形成装置及び方法 |
US20120244677A1 (en) * | 2011-03-24 | 2012-09-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus for selectively removing anti-stiction coating |
US20160181116A1 (en) * | 2014-12-18 | 2016-06-23 | Lam Research Corporation | Selective nitride etch |
JP2018022716A (ja) * | 2016-08-01 | 2018-02-08 | 東京エレクトロン株式会社 | 窒化膜の形成方法および形成装置 |
WO2018235877A1 (ja) * | 2017-06-21 | 2018-12-27 | Jsr株式会社 | カバー膜形成方法 |
JP2019104963A (ja) * | 2017-12-12 | 2019-06-27 | 東京エレクトロン株式会社 | 成膜装置 |
KR20190076277A (ko) * | 2017-12-22 | 2019-07-02 | 강원대학교산학협력단 | 양친성 고분자 사슬을 가지는 다리걸친 유기실리카 전구체를 이용한 가스 배리어 필름 제조용 조성물 및 이로부터 제조되는 가스 배리어 필름 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9303309B2 (en) * | 2013-01-11 | 2016-04-05 | The Aerospace Corporation | Systems and methods for enhancing mobility of atomic or molecular species on a substrate at reduced bulk temperature using acoustic waves, and structures formed using same |
TWI725182B (zh) * | 2016-05-06 | 2021-04-21 | 美商應用材料股份有限公司 | 透過自組裝單層形成而成的選擇性沉積 |
JP6809315B2 (ja) * | 2017-03-15 | 2021-01-06 | 東京エレクトロン株式会社 | 半導体装置の製造方法及び真空処理装置 |
US9911595B1 (en) | 2017-03-17 | 2018-03-06 | Lam Research Corporation | Selective growth of silicon nitride |
JP6981356B2 (ja) * | 2018-04-24 | 2021-12-15 | 東京エレクトロン株式会社 | 成膜装置及び成膜方法 |
JP7110090B2 (ja) * | 2018-12-28 | 2022-08-01 | 東京エレクトロン株式会社 | 基板処理方法および基板処理システム |
US20210087691A1 (en) * | 2019-09-24 | 2021-03-25 | Tokyo Electron Limited | Film forming method |
-
2019
- 2019-10-28 JP JP2019195652A patent/JP7433016B2/ja active Active
-
2020
- 2020-10-23 US US17/078,275 patent/US11456184B2/en active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009256796A (ja) * | 2008-03-27 | 2009-11-05 | Horiba Ltd | 単分子膜形成装置及び方法 |
US20120244677A1 (en) * | 2011-03-24 | 2012-09-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus for selectively removing anti-stiction coating |
US20160181116A1 (en) * | 2014-12-18 | 2016-06-23 | Lam Research Corporation | Selective nitride etch |
JP2018022716A (ja) * | 2016-08-01 | 2018-02-08 | 東京エレクトロン株式会社 | 窒化膜の形成方法および形成装置 |
WO2018235877A1 (ja) * | 2017-06-21 | 2018-12-27 | Jsr株式会社 | カバー膜形成方法 |
JP2019104963A (ja) * | 2017-12-12 | 2019-06-27 | 東京エレクトロン株式会社 | 成膜装置 |
KR20190076277A (ko) * | 2017-12-22 | 2019-07-02 | 강원대학교산학협력단 | 양친성 고분자 사슬을 가지는 다리걸친 유기실리카 전구체를 이용한 가스 배리어 필름 제조용 조성물 및 이로부터 제조되는 가스 배리어 필름 |
Also Published As
Publication number | Publication date |
---|---|
US20210125837A1 (en) | 2021-04-29 |
US11456184B2 (en) | 2022-09-27 |
JP7433016B2 (ja) | 2024-02-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5966618B2 (ja) | 成膜方法 | |
JP5862459B2 (ja) | 成膜方法 | |
CN105200393A (zh) | 成膜装置和成膜方法 | |
KR101615584B1 (ko) | 반도체 장치의 제조 장치, 반도체 장치의 제조 방법 및 기록 매체 | |
JP5051594B2 (ja) | 誘電体材料を処理する装置及び方法 | |
KR101046506B1 (ko) | 이머전 리소그라피에서 패턴 붕괴를 방지하기 위한 플라즈마 표면처리 | |
TW201207148A (en) | Improved silicon nitride films and methods | |
JP2012209393A (ja) | クリーニング方法及び成膜方法 | |
JPH0982696A (ja) | 半導体装置の製造方法および半導体製造装置 | |
KR20090034721A (ko) | 반도체 제조 장치 및 자외광으로 물질을 경화하는 방법 | |
WO2019235255A1 (ja) | 成膜用組成物および成膜装置 | |
JP7433016B2 (ja) | 基板処理方法および基板処理システム | |
JP2019212776A5 (ja) | 半導体装置の製造方法、成膜用組成物および成膜装置 | |
JP2012036040A (ja) | グラフェンシート系材料の形成方法およびグラフェンシート系材料 | |
JP6881273B2 (ja) | 成膜装置 | |
JP4342974B2 (ja) | 硬化処理装置及びその方法、並びに塗布膜形成装置 | |
JP6981356B2 (ja) | 成膜装置及び成膜方法 | |
US20120135161A1 (en) | Method for preparing an oriented-porosity dielectric material on a substrate by means of electromagnetic and/or photonic treatment | |
KR102270547B1 (ko) | 반도체 장치의 제조 방법 및 진공 처리 장치 | |
WO2019235256A1 (ja) | 成膜用組成物および成膜装置 | |
WO2019235257A1 (ja) | 成膜用組成物および成膜装置 | |
JP2023028517A (ja) | 基板処理方法 | |
JP2786224B2 (ja) | 薄膜作製装置および方法 | |
CN109468613A (zh) | 成膜装置以及成膜方法 | |
JP2019212777A5 (ja) | 半導体装置の製造方法、成膜用組成物および成膜装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20220627 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20230501 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20230516 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230713 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20230905 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20231017 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20240109 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20240206 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7433016 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |