JP6981356B2 - 成膜装置及び成膜方法 - Google Patents
成膜装置及び成膜方法 Download PDFInfo
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- JP6981356B2 JP6981356B2 JP2018083406A JP2018083406A JP6981356B2 JP 6981356 B2 JP6981356 B2 JP 6981356B2 JP 2018083406 A JP2018083406 A JP 2018083406A JP 2018083406 A JP2018083406 A JP 2018083406A JP 6981356 B2 JP6981356 B2 JP 6981356B2
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Description
前記処理容器内に設けられ、複数の基板を載置するための基板載置領域がその上面側に形成され、前記基板載置領域を回転軸周りに公転させるための回転機構を備えた回転テーブルと、
前記基板載置領域に載置された基板を加熱する加熱機構と、
前記回転テーブルを回転させたときに基板が移動する移動領域と対向するように設けられ、前記加熱機構により加熱された基板の表面に吸着し、互いに反応して膜物質を形成するための成膜ガスである第1の成膜ガス及び第2の成膜ガスを前記回転テーブル側に向けて吐出するためのガス吐出孔が、前記回転テーブルの回転中心側から周縁側の範囲に亘って前記移動領域と交差するように形成されたガス供給部と、
前記処理容器内を排気するための排気部と、を備え、
前記第1の成膜ガス及び第2の成膜ガスは、前記移動領域の互いに重なる領域に同時に供給されることを特徴とする。
ガス供給ノズル3は、先端が封止された筒状に構成され、真空容器10の外周壁から中心に向かって伸び、回転テーブル2を回転させた時にウエハWが移動する既述の移動領域Aと交差するように、回転テーブル2の径方向に向けて設けられている。また、ガス供給ノズル3は、当該回転テーブル2の上方位置に、ウエハWの移動領域Aと対向するように設けられている。
またガス供給管31には、クリーニング用のガスを供給するためのクリーニングガス供給管33の一端が接続されている。クリーニングガス供給管33の他端側は、2本に分岐し、各端部に夫々N2ガス供給源34と、O2(酸素)ガス供給源35と、が接続されている。なお図2、3中のV7、V8はバルブである。
このような構成により、真空容器10内にガス供給ノズル3を介し、クリーニングガスとして、N2ガスにて希釈されたO2ガスを供給することができる。
一方、飽和蒸気圧が高い成膜ガス(図5に示す例では第2の成膜ガス)については、化学量論比的には低蒸気圧ガスと同量の(分圧を揃えた)高蒸気圧ガスを供給すればよいようにも考えられる。しかしながら、分圧を揃えた状態の場合、低蒸気圧ガスと比較して、高蒸気圧ガスはウエハWへの吸着量も少なくなってしまう。そこで、高蒸気圧ガスについては、飽和蒸気圧を越えない分圧範囲にて、低蒸気圧ガスよりも過剰量供給することが好ましい。
P1’/P0’の値が1以下であり、且つ、低蒸気圧ガスよりも高い分圧で供給するとよい。
これらの観点を総合的に勘案し、本例では、供給された成膜ガス(低蒸気圧ガスを基準とする)に対する当該成膜ガスの消費量の割合である反応効率Eが70%以上、例えば90%となる温度にウエハWを加熱するようにヒータ7の加熱温度が設定されている。
E(%)={(L1−L1’)/L1}×100 …(1)
例えば図示しない外部の搬送機構により6枚のウエハWを回転テーブル2の各載置部24に載置し、ゲートバルブ16を閉じる。載置部24に載置されたウエハWは、ヒータ7によって所定の温度、例えば140℃に加熱される。次いで真空排気部43により排気口4を介して排気を行い、N2ガス供給源52、62から供給されるN2ガスにより、真空容器10内の圧力(全圧)を、例えば50Pa(0.4Torr)に調節し、回転テーブル2を例えば10rpm〜30rpmで回転させる。
このとき、次の成膜処理を開始する前に、例えば真空容器10内にクリーニングガスであるO2ガスを供給すると共に、紫外線ランプ83により紫外線を照射する。これにより活性化したO2ガスを回転テーブル2の表面に供給し、載置部24以外のウエハWによって覆われていなかった領域に形成されたポリイミドの膜を分解する処理を行ってもよい。また回転テーブル2に形成された膜の分解は、予め設定された回数の成膜処理を行った後に行うようにしてもよい。
以上に検討したように、今回開示された実施形態はすべての点で例示であって制限的なものではないと考えられるべきである。上記の実施形態は、添付の請求の範囲及びその主旨を逸脱することなく、様々な形態で省略、置換、変更されてもよい。
図9は、ウエハWの加熱温度を140、160、180及び200℃の各々に設定したときの膜厚分布を示す特性図である。図9の横軸は、成膜ガスの吐出位置からの距離を示し、縦軸は各位置に成膜されたポリイミドの膜厚を示している。
4 排気口
2 回転テーブル
10 真空容器
7 ヒータ
Claims (7)
- 真空雰囲気が形成される処理容器と、
前記処理容器内に設けられ、複数の基板を載置するための基板載置領域がその上面側に形成され、前記基板載置領域を回転軸周りに公転させるための回転機構を備えた回転テーブルと、
前記基板載置領域に載置された基板を加熱する加熱機構と、
前記回転テーブルを回転させたときに基板が移動する移動領域と対向するように設けられ、前記加熱機構により加熱された基板の表面に吸着し、互いに反応して膜物質を形成するための成膜ガスである第1の成膜ガス及び第2の成膜ガスを前記回転テーブル側に向けて吐出するためのガス吐出孔が、前記回転テーブルの回転中心側から周縁側の範囲に亘って前記移動領域と交差するように形成されたガス供給部と、
前記処理容器内を排気するための排気部と、を備え、
前記第1の成膜ガス及び第2の成膜ガスは、前記移動領域の互いに重なる領域に同時に供給されることを特徴とする成膜装置。 - 前記第1の成膜ガス及び第2の成膜ガスのうちの飽和蒸気圧が低い低蒸気圧ガスの飽和蒸気圧をP0、飽和蒸気圧が高い高蒸気圧ガスの飽和蒸気圧をP0’とし、前記低蒸気圧ガス及び高蒸気圧ガスの分圧を各々P1,P1’とすると、前記第1、第2の成膜ガスの各供給圧力はP1/P0が1以下、P1’/P0’が1以下であり且つP1よりも高い値になるように設定され、
前記加熱機構は、供給された各成膜ガスに対する当該成膜ガスの消費量の割合である反応効率が70%以上となる温度に基板を加熱することを特徴とする請求項1に記載の成膜装置。 - 前記処理容器の天井面側には、前記回転テーブル側に向けて、膜の処理を行うための光を照射する照射部を備えたことを特徴とする請求項1または2に記載の成膜装置。
- 前記照射部は、前記ガス供給部を介して供給されたクリーニングガスを活性化して前記回転テーブルの表面に付着した膜のクリーニングを行うための紫外線照射部であることを特徴とする請求項3に記載の成膜装置。
- 前記照射部は、前記膜を改質するための紫外線照射部であることを特徴とする請求項3に記載の成膜装置。
- 真空雰囲気が形成される処理容器内に設けられ、回転テーブルの一面側に形成された複数の基板載置領域に基板を載置し、当該回転テーブルを回転させてその回転軸周りに基板を公転させる工程と、
次いで、前記基板載置領域に載置された基板を加熱すると共に、当該加熱された基板の表面に吸着し、互いに反応して膜物質を形成するための成膜ガスである第1の成膜ガス及び第2の成膜ガスを、前記回転テーブルの回転中心側から周縁方向側の範囲に亘って、前記公転に伴って基板が移動する移動領域と交差するように、前記回転テーブルと対向する位置から供給する工程と、
前記処理容器内を排気する工程と、を含み、
前記第1の成膜ガス及び第2の成膜ガスは、夫々基板の移動領域の互いに重なる領域に同時に供給されることを特徴とする成膜方法。 - 成膜ガスを供給する工程では、前記第1の成膜ガス及び第2の成膜ガスのうちの飽和蒸気圧が低い低蒸気圧ガスの飽和蒸気圧をP0、飽和蒸気圧が高い高蒸気圧ガスの飽和蒸気圧をP0’とし、前記低蒸気圧ガス及び高蒸気圧ガスの分圧を各々P1,P1’とすると、前記第1、第2の成膜ガスの各供給圧力はP1/P0が1以下、P1’/P0’が1以下であり且つP1よりも高い値になるように設定されることと、
前記処理容器に供給された各成膜ガスに対する当該成膜ガスの消費量の割合である反応効率が70%以上となる温度に基板を加熱することと、を特徴とする請求項6に記載の成膜方法。
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