TWI709434B - 包含廢氣分解模組之基板處理設備與廢氣之處理方法 - Google Patents
包含廢氣分解模組之基板處理設備與廢氣之處理方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 85
- 239000000758 substrate Substances 0.000 title claims abstract description 79
- 238000000354 decomposition reaction Methods 0.000 title claims abstract description 30
- 239000003446 ligand Substances 0.000 claims abstract description 55
- 239000007789 gas Substances 0.000 claims description 270
- 239000012495 reaction gas Substances 0.000 claims description 68
- 238000009826 distribution Methods 0.000 claims description 20
- 238000005137 deposition process Methods 0.000 claims description 14
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 8
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 239000001272 nitrous oxide Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000000376 reactant Substances 0.000 abstract description 5
- 239000006227 byproduct Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000002912 waste gas Substances 0.000 description 4
- 238000000427 thin-film deposition Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
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Abstract
本發明之基板處理設備與廢氣處理方法中,廢氣分解模組將製程腔室排出的源氣體分解。透過與單獨供應的O2
、N2
O與O3
反應,配位子與配位子已被分解的源氣體處於穩定狀態,然後被改變為混合氣體,包含與其混合的反應氣體。接下來,混合氣體流入排氣泵內且被釋放。或者,配位子及源氣體與反應氣體混合且被釋放。因此,配位子以及配位子已被分解的源氣體不會與反應氣體或排氣泵中出現的熱反應,由此流入排氣泵內的配位子被分解的源氣體與配位子不會沈積於排氣泵的內表面上。排氣泵中堆積的配位子被分解的源氣體與配位子不會爆炸。
Description
本發明係關於一種包含廢氣分解模組之基板處理設備以及廢氣之處理方法,將製程腔室釋放的源氣體分解以避免廢氣損壞排氣泵。
透過在基板比如矽晶元或玻璃上沈積源材料之薄膜沈積製程、利用感光材料將沈積的薄膜中的選擇區域曝光或覆蓋之光刻製程,以及將選擇區域中的薄膜移除以形成期望圖案之蝕刻製程,製造半導體裝置、平面顯示裝置或太陽能電池。
薄膜沈積製程的例子包含物理氣相沈積(physical vapor deposition;PVD)製程、化學氣相沈積(chemical vapor deposition;CVD)製程與原子層沈積(atomic layer deposition;ALD)製程。
薄膜沈積製程利用各種材料在基板上沈積薄膜。在這種情況下,製程腔室包含用於處理基板的空間,沈積製程中僅僅使用流入製程腔室內的係為前驅物的少量源氣體,大部分源氣體連同沈積製程中出現的副產品被釋放到製程腔室外部。
透過排氣管與排氣泵,沈積製程中未使用的源氣體與製程腔室的副產品被釋放到製程腔室外部。就是說,沈積製程中未使用的源氣體與製程腔室的副產品被排氣泵提取,且透過排氣管與排氣泵被釋放到排氣泵外部。
另外,透過與排氣泵中出現的熱及製程腔室中釋放的反應氣體反應,沈積製程中未使用的源氣體被分解,以及分解的源氣體沈積於排氣泵的內表面上以形成薄膜。這種情況下,構成排氣泵的元件之間的間隙被改變,因為這個原因,排氣泵被損壞。
當用於低溫且被釋放到製程腔室外部的源氣體被堆積於排氣泵中時,源氣體可由於排氣泵中出現的熱而爆炸。
因此,本發明在於提供一種包含廢氣分解模組之基板處理設備以及廢氣之處理方法,實質上避免習知技術之限制與缺陷所導致的一或多個問題。
本發明一方面在於提供一種包含廢氣分解模組之基板處理設備以及廢氣之處理方法,解決習知技術之全部上述問題。
本發明另一方面在於提供一種包含廢氣分解模組之基板處理設備,將製程腔室釋放的且沈積製程中未使用的源氣體分解,以及將分解的源氣體釋放穿過排氣泵,從而避免源氣體損害排氣泵,以及完全避免源氣體爆炸。
本發明其他的優點、目的和特徵將在如下的說明書中部分地加以闡述,並且本發明其他的優點、目的和特徵對於本領域的普通技術人員來說,可以透過本發明如下的說明得以部分地理解或者可以從本發明的實踐中得出。本發明的目的和其它優點可以透過本發明所記載的說明書和申請專利範圍中特別指明的結構並結合圖式部份,得以實現和獲得。
為了獲得本發明的這些和其他優點,現對本發明作具體化和概括性的描述,一種基板處理設備包含:製程腔室,包含處理基板之空間;基板支撐裝置,被安裝於製程腔室中,基板被放置於基板支撐裝置上;源氣體分配裝置,分配源氣體至基板;反應氣體分配裝置,分配反應氣體至基板;源氣體排氣管,引導製程腔室之源氣體以被釋放至製程腔室外部;反應氣體排氣管,引導製程腔室之反應氣體以被釋放至製程腔室外部;排氣泵,連通源氣體排氣管與反應氣體排氣管之每一個,以分別排出源氣體與反應氣體至源氣體排氣管與反應氣體排氣管;以及廢氣分解模組,被安裝於製程腔室與排氣泵之間的源氣體排氣管中,以分解穿過源氣體排氣管流入排氣泵內之源氣體。
本發明之另一方面,提供一種基板處理設備之廢氣處理方法,在製程腔室中處理基板且在基板上沈積薄膜,被分配至製程腔室之源氣體與反應氣體中,排出且處理沈積製程中未使用的源氣體與反應氣體,廢氣處理方法包含︰利用排氣泵,分別排出源氣體與反應氣體至源氣體排氣管與反應氣體排氣管,源氣體排氣管之一側連通製程腔室,源氣體排氣管之另一側連通排氣泵,反應氣體排氣管之一側連通製程腔室,反應氣體排氣管之另一側連通排氣泵;將流入源氣體排氣管之源氣體分解;以及透過混合源氣體排氣管之經過分解的源氣體與反應氣體排氣管之反應氣體產生混合氣體,釋放該混合氣體穿過排氣泵之內部。
可以理解的是,如上所述的本發明之概括說明和隨後所述的本發明之詳細說明均是具有代表性和解釋性的說明,並且是為了進一步揭示本發明之申請專利範圍。
現在將結合附圖對本發明的較佳實施方式作詳細說明。這些圖式部份中所使用的相同的參考標號代表相同或同類部件。
在說明書中,為每一圖式中的元件增添參考標號時,應注意到其他圖式中已經用於標記同類元件的同類參考標號盡可能用於同類元件。
說明書中描述的術語應該理解如下。
除非本文內容清楚地加以指明,否則本文使用的單數形式「一」與「該」還意圖包含複數形式。術語「第一」與「第二」用於區分一個元件與另一元件,這些元件不應該受到這些術語的限制。
還應進一步理解,當本文使用術語「包含」與/或「具有」指定所描述的特徵、整數、步驟、作業、元件與/或部件的出現時,但是不排除出現或附加一或多個其他特徵、整數、步驟、作業、元件、部件與/或其組合。
術語「至少其一」應該被理解為包含相關列表項之一或多個的任意與全部組合。舉個例子,「第一項、第二項與第三項之至少一個」之含義表示第一項、第二項與第三項之兩個或多個的全部項之組合以及第一項、第二項或第三項。
術語「與/或」應理解為包含相關列表項之一或多個的任意與全部組合。舉個例子,「第一項、第二項與/或第三項」之含義表示第一項、第二項與第三項之兩個或多個的全部項之組合以及第一項、第二項或第三項。
還應理解,當一個元件被稱為位於另一元件「之上」時,可直接地位於另一元件之上,或者還可以出現中間元件。另外,應理解,當一個元件被稱為位於另一元件「下方」時,可直接位於下方,或者還可以出現一或多個中間元件。此外,應理解,當一個元件被稱為位於兩個元件「之間」時,兩個元件之間可只有一個元件,或者還可以出現一或多個中間元件。用於描述元件之間關係的其他術語比如「位於…之間」或「直接地位於…之間」可同樣地加以理解。
在每一步驟中,參考標號(例如,S100、S110、S120等)係為了便於描述,而非界定步驟的順序。此外,除非文中清楚地描述特定順序,否則可依照與描述順序不同的順序完成步驟。就是說,可依照描述的順序完成步驟,或者同時完成步驟,或者依照相反的順序完成步驟。
以下,將結合附圖詳細描述本發明實施例之包含廢氣分解模組之基板處理設備與廢氣之處理方法。
首先,將描述本發明實施例之基板處理設備。
圖1係為本發明實施例之基板處理設備之配置之示意圖,以及圖2係為圖1之平面剖視圖。
如圖所示,本發明實施例之基板處理設備包含製程腔室110。製程腔室110包含一個空間,基板50比如矽晶元、玻璃等被載入這個空間內且被處理。製程腔室110包含主體111與蓋115。主體111包含開放頂部且被放置於相對低的一側。蓋115與主體111的開放頂部耦合且被放置於相對高的一側。
基板支撐裝置120被安裝於製程腔室110的內部下表面上。基板50被安裝於基板支撐裝置120上且由其支撐。基板支撐裝置120包含支架121與支撐軸125。支架121被放置於製程腔室110中,且包含其上安裝與支撐基板50之頂部。支撐軸125包含上端與下端,上端耦合於支架121之底部,下端被暴露於製程腔室110的底部的外部且連接驅動部130。
基板50被提供為複數個。複數個基板50關於支架121的中央呈輻射狀被安裝於支架121上且由其支撐。驅動部130可升高、降低或旋轉基板支撐裝置120。就是說,驅動部130透過升高、降低或旋轉支撐軸125而升高、降低或旋轉支架121。因此,支架121上安裝且支撐的基板50被升高、降低或旋轉。
用於加熱基板50的加熱單元(圖未示)比如加熱器等被安裝於其上安裝且支撐基板50的支架121附近。
為了在基板50上沈積薄膜,源氣體與反應氣體被供應至製程腔室110。源氣體係為於基板50上沈積的材料,以及反應氣體幫助源氣體容易沈積於基板50上。為此,於製程腔室110的內部上表面上安裝源氣體分配裝置141與反應氣體分配裝置145。源氣體分配裝置141用於分配源氣體至支架121上安裝的基板50。反應氣體分配裝置145用於分配反應氣體至基板50。
源氣體分配裝置141與反應氣體分配裝置145各自被提供為蓮蓬頭,且可相互分開與安裝。此外,源氣體分配裝置141分配的源氣體被僅僅分配到與源氣體分配裝置141相對的源氣體區域121a。反應氣體分配裝置145分配的反應氣體僅僅被分配到與反應氣體分配裝置145相對的反應氣體區域121b。這種情況下,源氣體分配裝置141分配的源氣體以及反應氣體分配裝置145分配的反應氣體無須在被分配到基板50的中途彼此混合而被分配。
因此,隨著基板支撐裝置120旋轉,基板支撐裝置120上安裝與支撐的複數個基板50可順序地位於源氣體區域121a中,以及順序地位於反應氣體區域121b中。就是說,依照基板支撐裝置120的旋轉,當位於源氣體區域121a中且被供應源氣體的基板50位於反應氣體區域121b且被供應反應氣體時,透過源氣體與反應氣體之間的反應,源氣體被沈積於基板50上。
沈積製程中僅僅使用少量的各自被供應至製程腔室110的源氣體與反應氣體,源氣體與反應氣體各自的大部分連同沈積製程中出現的副產品被釋放到製程腔室110外部。
提供源氣體排氣管151、反應氣體排氣管153與排氣泵155,以用於將沈積製程中未使用的源氣體與反應氣體連同副產品釋放至製程腔室110外部。
源氣體排氣管151的一端連通製程腔室110的底部,以及源氣體排氣管151的另一端連通排氣泵155。反應氣體排氣管153的一端連通製程腔室110的底部,反應氣體排氣管153的另一端連通排氣泵155。這種情況下,源氣體排氣管151的一端與反應氣體排氣管153的一端各自與正好放置於源氣體區域121a與反應氣體區域121b下方的製程腔室110的底部連通。
因此,當提供的作為真空泵等的排氣泵155被驅動時,被分配至源氣體區域121a但是在沈積製程中未使用的源氣體被提取且流入源氣體排氣管151內,以及被分配至反應氣體區域121b但是在沈積在製程中未使用的反應氣體被提取且流入反應氣體排氣管153內。接下來,源氣體與反應氣體被改變為混合氣體且流入排氣泵155內,以及混合的氣體穿過排氣泵155的內部被釋放到排氣泵155外部。
沈積製程中未使用且穿過排氣管151流入排氣泵155內的源氣體與排氣泵155中出現的熱或者與穿過反應氣體排氣管153流入排氣泵155內的反應氣體反應,以及沈積於排氣泵155的內表面上。因為這個原因,可損壞排氣泵155。特別地,當源氣體用於低溫時,排氣泵155中堆積的源氣體可由於排氣泵155中出現的熱而爆炸。
為了避免這樣的問題,本發明實施例之基板處理設備包含廢氣分解模組,將流入源氣體排氣管151內的源氣體分解。
廢氣分解模組160被安裝於製程腔室110與排氣泵155之間的源氣體排氣管151附近,以及將流入源氣體排氣管151內的源氣體分解。這種情況下,廢氣分解模組160將源氣體的配位子(ligand)分解,以及配位子被分解的源氣體被供應至排氣泵155。
因為配位子與配位子被分解的源氣體處於不穩定的狀態,所以需要穩定配位子與配位子被分解的源氣體。為此,氧氣、一氧化二氮(N2
O)或臭氧被供應至廢氣分解模組160與排氣泵155之間的源氣體排氣管151。因此,配位子與配位子被分解的源氣體透過與氧氣、一氧化二氮或臭氧反應而處於穩定狀態。
接下來,配位子與配位子被分解的源氣體被改變為混合氣體,包含與其混合的反應氣體排氣管153的反應氣體。因此,配位子與配位子被分解的源氣體不與反應氣體或排氣泵155中出現的熱反應,由此,流入排氣泵155內的配位子被分解的源氣體與配位子不沈積於排氣泵155的內表面上。此外,排氣泵155中堆積的配位子被分解的源氣體與配位子不爆炸。
這種情況下,廢氣分解模組160被提供為產生電漿以分解源氣體的電漿產生器,或者加熱並分解源氣體的熱源。
圖3係為本發明另一實施例之基板處理設備之配置之示意圖。以下將僅僅描述圖3與圖1之間的差別。
如圖所示,本發明另一實施例之基板處理設備中,廢氣分解模組260分解的源氣體排氣管251之配位子、配位子被分解的源氣體以及反應氣體排氣管253的反應氣體可流入排氣泵255內,然後在排氣泵255中彼此混合。接下來,混合的氣體被釋放到排氣泵255外部。
以下,將結合圖1至圖4描述本發明實施例之基板處理設備之廢氣處理方法。圖4係為本發明實施例之基板處理設備之廢氣處理方法之流程圖。
如圖所示,在步驟S110中,在被分配至製程腔室110的源氣體與反應氣體中,在基板50上沈積薄膜的沈積製程中未使用的源氣體與反應氣體分別被供應至源氣體排氣管151與反應氣體排氣管153,以及被排出製程腔室110外部。
如上所述,源氣體排氣管151的一側連通製程腔室110,另一側連通排氣泵155。此外,反應氣體排氣管153的一側連通製程腔室110,另一側連通排氣泵155。因此,當驅動排氣泵155時,製程腔室110之源氣體與反應氣體分別被提取且被排出至源氣體排氣管151與反應氣體排氣管153。
接下來,在步驟S120中,流入源氣體排氣管151內的源氣體被廢氣分解模組160分解。此外,在步驟S130中,經過分解的源氣體排氣管151的源氣體與反應氣體排氣管153的反應氣體透過混合被改變為混合氣體。接下來,在步驟S140中,混合氣體穿過排氣泵155的內部被釋放到外部。
這種情況下,廢氣分解模組160可為產生電漿以分解源氣體的電漿產生器,或者可為加熱並分解源氣體的熱源。此外,配位子與源氣體排氣管151的源氣體分離。
如上所述,透過與單獨供應的氧氣、一氧化二氮或臭氧反應,配位子與配位子被分解的源氣體處於穩定狀態,可與排氣泵155的反應氣體混合,可流入排氣泵155內且被排出。或者,配位子及源氣體在排氣泵155中與反應氣體排氣管153之反應氣體混合且被排出。
本實施例之基板處理設備與廢氣之處理方法中,廢氣分解模組160(260)可分解源氣體之配位子。接下來,已經穩定的配位子、配位子被分解的源氣體以及反應氣體排氣管153(253)之反應氣體被改變為混合氣體。混合氣體流入排氣泵155(255)內且被排出,或者配位子及配位子被分解的源氣體與排氣泵155(255)中的反應氣體混合且被排出。因此,配位子與配位子被分解的源氣體未與排氣泵155(255)中出現的反應氣體或熱反應,由此,流入排氣泵155(255)內的配位子被分解的源氣體與配位子未沈積於排氣泵155(255)的內表面上。此外,排氣泵155(255)上堆積的配位子被分解的源氣體與配位子不爆炸。
本發明實施例之基板處理設備與廢氣之處理方法中,廢氣分解模組可分解製程腔室中排出的源氣體,以分解源氣體的配位子。此外,配位子與配位子已被分解的源氣體透過與單獨供應的氧氣、一氧化二氮或臭氧反應而處於穩定狀態,然後被改變為混合氣體,包含與其混合的反應氣體。接下來,混合氣體可流入排氣泵內且被排出。或者,配位子及源氣體與反應氣體混合且被排出。因此,配位子與配位子已被分解的源氣體不與排氣泵中出現的反應氣體或熱反應,由此,流入排氣泵內的配位子被分解的源氣體與配位子不會沈積於排氣泵之內表面上。另外,排氣泵中堆積的配位子被分解的源氣體與配位子不會爆炸。
雖然本發明以前述之實施例揭露如上,然其並非用以限定本發明。在不脫離本發明之精神和範圍內,所為之更動與潤飾,均屬本發明之專利保護範圍。關於本發明所界定之保護範圍請參考所附之申請專利範圍。
50‧‧‧基板110‧‧‧製程腔室111‧‧‧主體115‧‧‧蓋120‧‧‧基板支撐裝置121‧‧‧支架121a‧‧‧源氣體區域121b‧‧‧反應氣體區域125‧‧‧支撐軸130‧‧‧驅動部141‧‧‧源氣體分配裝置145‧‧‧反應氣體分配裝置151‧‧‧源氣體排氣管153‧‧‧反應氣體排氣管155‧‧‧排氣泵160‧‧‧廢氣分解模組251‧‧‧源氣體排氣管253‧‧‧反應氣體排氣管255‧‧‧排氣泵260‧‧‧廢氣分解模組
圖1係為本發明實施例之基板處理設備之配置之示意圖。 圖2係為圖1之平面剖視圖。 圖3係為本發明另一實施例之基板處理設備之配置之示意圖。 圖4係為本發明實施例之基板處理設備之廢氣處理方法之流程圖。
50‧‧‧基板
110‧‧‧製程腔室
111‧‧‧主體
115‧‧‧蓋
120‧‧‧基板支撐裝置
121‧‧‧支架
125‧‧‧支撐軸
130‧‧‧驅動部
141‧‧‧源氣體分配裝置
145‧‧‧反應氣體分配裝置
151‧‧‧源氣體排氣管
153‧‧‧反應氣體排氣管
155‧‧‧排氣泵
160‧‧‧廢氣分解模組
Claims (11)
- 一種基板處理設備,包含:一製程腔室,包含處理一基板之一空間;一基板支撐裝置,被安裝於該製程腔室中,該基板被放置於該基板支撐裝置上;一源氣體分配裝置,分配一源氣體僅至一源氣體區域;一反應氣體分配裝置,分配一反應氣體僅至一反應氣體區域;一源氣體排氣管,引導該製程腔室之該源氣體以被釋放至該製程腔室外部;一反應氣體排氣管,引導該製程腔室之該反應氣體以被釋放至該製程腔室外部;一排氣泵,連通該源氣體排氣管與該反應氣體排氣管之每一個,以分別排出該源氣體與該反應氣體至該源氣體排氣管與該反應氣體排氣管;以及一廢氣分解模組,被安裝於該製程腔室與該排氣泵之間的該源氣體排氣管中,以分解穿過該源氣體排氣管流入該排氣泵內之該源氣體,其中該源氣體排氣管的一端連通該源氣體區域,該源氣體排氣管的另一端連通該排氣泵,其中該反應氣體排氣管的一端連通該反應氣體區域,該反應氣體排氣管的另一端連通該排氣泵,其中該廢氣分解模組被安裝於該源氣體排氣管且位於該源氣體排氣管的該端與該源氣體排氣管的該另一端之間,其中被該廢氣分解模組分解的該源氣體與該反應氣體混合。
- 如請求項1所述之基板處理設備,其中該廢氣分解模組係為一電漿產生器或加熱該源氣體之一熱源。
- 如請求項1所述之基板處理設備,其中該廢氣分解模組所分解的該源氣體與該反應氣體排氣管之該反應氣體混合且流入該排氣泵內。
- 如請求項1所述之基板處理設備,其中該廢氣分解模組所分解的該源氣體在該排氣泵中與該反應氣體排氣管之該反應氣體混合。
- 如請求項1所述之基板處理設備,其中該源氣體排氣管之該源氣體之一配位子被該廢氣分解模組分解,以及該源氣體排氣管之該配位子與配位子被分解之該源氣體透過與一種材料反應被穩定且流入該排氣泵內,該一種材料係選擇自被供應至該源氣體排氣管之氧氣(O2)、一氧化二氮(N2O)與臭氧(O3)。
- 一種基板處理設備之廢氣處理方法,在一製程腔室中在一基板上沈積薄膜,被分配至該製程腔室之一源氣體與一反應氣體中,排出且處理沈積製程中未使用的該源氣體與該反應氣體,該廢氣處理方法包含:利用一排氣泵,分別排出該源氣體與該反應氣體至一源氣體排氣管與一反應氣體排氣管,該源氣體排氣管之一端連通該製程腔室,該源氣體排氣管之另一端連通該排氣泵,該反應氣體排氣管之一端連通該製程腔室,該反應氣體排氣管之另一端連通該排氣泵;將流入該源氣體排氣管之該源氣體分解;以及透過混合該源氣體排氣管之經過分解的該源氣體與該反應氣體排氣管之該反應氣體產生一混合氣體,釋放該混合氣體穿過該排氣泵之內部, 其中該源氣體排氣管的該端連通設置於該製程腔室的一源氣體區域,該源氣體排氣管的該另一端連通該排氣泵,其中該反應氣體排氣管的該端連通設置於該製程腔室一反應氣體區域,該反應氣體排氣管的該另一端連通該排氣泵,其中一廢氣分解模組被安裝於該源氣體排氣管且位於該源氣體排氣管的該端與該源氣體排氣管的該另一端之間,其中被該廢氣分解模組分解的該源氣體與該反應氣體混合。
- 如請求項6所述之基板處理設備之廢氣處理方法,其中該源氣體排氣管之該源氣體透過一電漿產生器所產生的電漿被分解,或者透過加熱被分解。
- 如請求項7所述之基板處理設備之廢氣處理方法,其中該源氣體排氣管之該源氣體之一配位子被分解。
- 如請求項8所述之基板處理設備之廢氣處理方法,其中透過與一種材料反應,該源氣體排氣管之該配位子以及配位子被分解的該源氣體被穩定且流入該排氣泵內,該一種材料係選擇自被供應至該源氣體排氣管之氧氣、一氧化二氮與臭氧。
- 如請求項6所述之基板處理設備之廢氣處理方法,其中該源氣體排氣管之經過分解的該源氣體以及該反應氣體排氣管之該反應氣體彼此混合且流入該排氣泵內。
- 如請求項6所述之基板處理設備之廢氣處理方法,其中該源氣體排氣管之經過分解的該源氣體以及該反應氣體排氣管之該反應氣體在該排氣泵中彼此混合。
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- 2016-10-04 WO PCT/KR2016/011045 patent/WO2017061742A1/ko active Application Filing
- 2016-10-04 US US15/766,000 patent/US10808315B2/en active Active
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Patent Citations (1)
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TW200901287A (en) * | 2006-12-26 | 2009-01-01 | Cowin Dst Co Ltd | Metal gas supply apparatus and remaining gas removal apparatus used for thin film depositing apparatus and method thereof |
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US20220220613A1 (en) | 2022-07-14 |
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CN108352299A (zh) | 2018-07-31 |
JP6924763B2 (ja) | 2021-08-25 |
CN115360075A (zh) | 2022-11-18 |
KR20170040603A (ko) | 2017-04-13 |
CN108352299B (zh) | 2022-08-05 |
TW201731590A (zh) | 2017-09-16 |
JP2018531326A (ja) | 2018-10-25 |
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