TWI709434B - 包含廢氣分解模組之基板處理設備與廢氣之處理方法 - Google Patents

包含廢氣分解模組之基板處理設備與廢氣之處理方法 Download PDF

Info

Publication number
TWI709434B
TWI709434B TW105132269A TW105132269A TWI709434B TW I709434 B TWI709434 B TW I709434B TW 105132269 A TW105132269 A TW 105132269A TW 105132269 A TW105132269 A TW 105132269A TW I709434 B TWI709434 B TW I709434B
Authority
TW
Taiwan
Prior art keywords
gas
source gas
exhaust pipe
exhaust
source
Prior art date
Application number
TW105132269A
Other languages
English (en)
Other versions
TW201731590A (zh
Inventor
徐東源
金憲度
黃喆周
Original Assignee
南韓商周星工程股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 南韓商周星工程股份有限公司 filed Critical 南韓商周星工程股份有限公司
Publication of TW201731590A publication Critical patent/TW201731590A/zh
Application granted granted Critical
Publication of TWI709434B publication Critical patent/TWI709434B/zh

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02043Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046Dry cleaning only
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32798Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816Pressure
    • H01J37/32834Exhausting
    • H01J37/32844Treating effluent gases
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4408Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01DSEPARATION
    • B01D2258/00Sources of waste gases
    • B01D2258/02Other waste gases
    • B01D2258/0216Other waste gases from CVD treatment or semi-conductor manufacturing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H01L2021/60007Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process
    • H01L2021/60022Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process using bump connectors, e.g. for flip chip mounting
    • H01L2021/60097Applying energy, e.g. for the soldering or alloying process
    • H01L2021/60172Applying energy, e.g. for the soldering or alloying process using static pressure
    • H01L2021/60187Isostatic pressure, e.g. degassing using vacuum or pressurised liquid
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

本發明之基板處理設備與廢氣處理方法中,廢氣分解模組將製程腔室排出的源氣體分解。透過與單獨供應的O2 、N2 O與O3 反應,配位子與配位子已被分解的源氣體處於穩定狀態,然後被改變為混合氣體,包含與其混合的反應氣體。接下來,混合氣體流入排氣泵內且被釋放。或者,配位子及源氣體與反應氣體混合且被釋放。因此,配位子以及配位子已被分解的源氣體不會與反應氣體或排氣泵中出現的熱反應,由此流入排氣泵內的配位子被分解的源氣體與配位子不會沈積於排氣泵的內表面上。排氣泵中堆積的配位子被分解的源氣體與配位子不會爆炸。

Description

包含廢氣分解模組之基板處理設備與廢氣之處理方法
本發明係關於一種包含廢氣分解模組之基板處理設備以及廢氣之處理方法,將製程腔室釋放的源氣體分解以避免廢氣損壞排氣泵。
透過在基板比如矽晶元或玻璃上沈積源材料之薄膜沈積製程、利用感光材料將沈積的薄膜中的選擇區域曝光或覆蓋之光刻製程,以及將選擇區域中的薄膜移除以形成期望圖案之蝕刻製程,製造半導體裝置、平面顯示裝置或太陽能電池。
薄膜沈積製程的例子包含物理氣相沈積(physical vapor deposition;PVD)製程、化學氣相沈積(chemical vapor deposition;CVD)製程與原子層沈積(atomic layer deposition;ALD)製程。
薄膜沈積製程利用各種材料在基板上沈積薄膜。在這種情況下,製程腔室包含用於處理基板的空間,沈積製程中僅僅使用流入製程腔室內的係為前驅物的少量源氣體,大部分源氣體連同沈積製程中出現的副產品被釋放到製程腔室外部。
透過排氣管與排氣泵,沈積製程中未使用的源氣體與製程腔室的副產品被釋放到製程腔室外部。就是說,沈積製程中未使用的源氣體與製程腔室的副產品被排氣泵提取,且透過排氣管與排氣泵被釋放到排氣泵外部。
另外,透過與排氣泵中出現的熱及製程腔室中釋放的反應氣體反應,沈積製程中未使用的源氣體被分解,以及分解的源氣體沈積於排氣泵的內表面上以形成薄膜。這種情況下,構成排氣泵的元件之間的間隙被改變,因為這個原因,排氣泵被損壞。
當用於低溫且被釋放到製程腔室外部的源氣體被堆積於排氣泵中時,源氣體可由於排氣泵中出現的熱而爆炸。
因此,本發明在於提供一種包含廢氣分解模組之基板處理設備以及廢氣之處理方法,實質上避免習知技術之限制與缺陷所導致的一或多個問題。
本發明一方面在於提供一種包含廢氣分解模組之基板處理設備以及廢氣之處理方法,解決習知技術之全部上述問題。
本發明另一方面在於提供一種包含廢氣分解模組之基板處理設備,將製程腔室釋放的且沈積製程中未使用的源氣體分解,以及將分解的源氣體釋放穿過排氣泵,從而避免源氣體損害排氣泵,以及完全避免源氣體爆炸。
本發明其他的優點、目的和特徵將在如下的說明書中部分地加以闡述,並且本發明其他的優點、目的和特徵對於本領域的普通技術人員來說,可以透過本發明如下的說明得以部分地理解或者可以從本發明的實踐中得出。本發明的目的和其它優點可以透過本發明所記載的說明書和申請專利範圍中特別指明的結構並結合圖式部份,得以實現和獲得。
為了獲得本發明的這些和其他優點,現對本發明作具體化和概括性的描述,一種基板處理設備包含:製程腔室,包含處理基板之空間;基板支撐裝置,被安裝於製程腔室中,基板被放置於基板支撐裝置上;源氣體分配裝置,分配源氣體至基板;反應氣體分配裝置,分配反應氣體至基板;源氣體排氣管,引導製程腔室之源氣體以被釋放至製程腔室外部;反應氣體排氣管,引導製程腔室之反應氣體以被釋放至製程腔室外部;排氣泵,連通源氣體排氣管與反應氣體排氣管之每一個,以分別排出源氣體與反應氣體至源氣體排氣管與反應氣體排氣管;以及廢氣分解模組,被安裝於製程腔室與排氣泵之間的源氣體排氣管中,以分解穿過源氣體排氣管流入排氣泵內之源氣體。
本發明之另一方面,提供一種基板處理設備之廢氣處理方法,在製程腔室中處理基板且在基板上沈積薄膜,被分配至製程腔室之源氣體與反應氣體中,排出且處理沈積製程中未使用的源氣體與反應氣體,廢氣處理方法包含︰利用排氣泵,分別排出源氣體與反應氣體至源氣體排氣管與反應氣體排氣管,源氣體排氣管之一側連通製程腔室,源氣體排氣管之另一側連通排氣泵,反應氣體排氣管之一側連通製程腔室,反應氣體排氣管之另一側連通排氣泵;將流入源氣體排氣管之源氣體分解;以及透過混合源氣體排氣管之經過分解的源氣體與反應氣體排氣管之反應氣體產生混合氣體,釋放該混合氣體穿過排氣泵之內部。
可以理解的是,如上所述的本發明之概括說明和隨後所述的本發明之詳細說明均是具有代表性和解釋性的說明,並且是為了進一步揭示本發明之申請專利範圍。
現在將結合附圖對本發明的較佳實施方式作詳細說明。這些圖式部份中所使用的相同的參考標號代表相同或同類部件。
在說明書中,為每一圖式中的元件增添參考標號時,應注意到其他圖式中已經用於標記同類元件的同類參考標號盡可能用於同類元件。
說明書中描述的術語應該理解如下。
除非本文內容清楚地加以指明,否則本文使用的單數形式「一」與「該」還意圖包含複數形式。術語「第一」與「第二」用於區分一個元件與另一元件,這些元件不應該受到這些術語的限制。
還應進一步理解,當本文使用術語「包含」與/或「具有」指定所描述的特徵、整數、步驟、作業、元件與/或部件的出現時,但是不排除出現或附加一或多個其他特徵、整數、步驟、作業、元件、部件與/或其組合。
術語「至少其一」應該被理解為包含相關列表項之一或多個的任意與全部組合。舉個例子,「第一項、第二項與第三項之至少一個」之含義表示第一項、第二項與第三項之兩個或多個的全部項之組合以及第一項、第二項或第三項。
術語「與/或」應理解為包含相關列表項之一或多個的任意與全部組合。舉個例子,「第一項、第二項與/或第三項」之含義表示第一項、第二項與第三項之兩個或多個的全部項之組合以及第一項、第二項或第三項。
還應理解,當一個元件被稱為位於另一元件「之上」時,可直接地位於另一元件之上,或者還可以出現中間元件。另外,應理解,當一個元件被稱為位於另一元件「下方」時,可直接位於下方,或者還可以出現一或多個中間元件。此外,應理解,當一個元件被稱為位於兩個元件「之間」時,兩個元件之間可只有一個元件,或者還可以出現一或多個中間元件。用於描述元件之間關係的其他術語比如「位於…之間」或「直接地位於…之間」可同樣地加以理解。
在每一步驟中,參考標號(例如,S100、S110、S120等)係為了便於描述,而非界定步驟的順序。此外,除非文中清楚地描述特定順序,否則可依照與描述順序不同的順序完成步驟。就是說,可依照描述的順序完成步驟,或者同時完成步驟,或者依照相反的順序完成步驟。
以下,將結合附圖詳細描述本發明實施例之包含廢氣分解模組之基板處理設備與廢氣之處理方法。
首先,將描述本發明實施例之基板處理設備。
圖1係為本發明實施例之基板處理設備之配置之示意圖,以及圖2係為圖1之平面剖視圖。
如圖所示,本發明實施例之基板處理設備包含製程腔室110。製程腔室110包含一個空間,基板50比如矽晶元、玻璃等被載入這個空間內且被處理。製程腔室110包含主體111與蓋115。主體111包含開放頂部且被放置於相對低的一側。蓋115與主體111的開放頂部耦合且被放置於相對高的一側。
基板支撐裝置120被安裝於製程腔室110的內部下表面上。基板50被安裝於基板支撐裝置120上且由其支撐。基板支撐裝置120包含支架121與支撐軸125。支架121被放置於製程腔室110中,且包含其上安裝與支撐基板50之頂部。支撐軸125包含上端與下端,上端耦合於支架121之底部,下端被暴露於製程腔室110的底部的外部且連接驅動部130。
基板50被提供為複數個。複數個基板50關於支架121的中央呈輻射狀被安裝於支架121上且由其支撐。驅動部130可升高、降低或旋轉基板支撐裝置120。就是說,驅動部130透過升高、降低或旋轉支撐軸125而升高、降低或旋轉支架121。因此,支架121上安裝且支撐的基板50被升高、降低或旋轉。
用於加熱基板50的加熱單元(圖未示)比如加熱器等被安裝於其上安裝且支撐基板50的支架121附近。
為了在基板50上沈積薄膜,源氣體與反應氣體被供應至製程腔室110。源氣體係為於基板50上沈積的材料,以及反應氣體幫助源氣體容易沈積於基板50上。為此,於製程腔室110的內部上表面上安裝源氣體分配裝置141與反應氣體分配裝置145。源氣體分配裝置141用於分配源氣體至支架121上安裝的基板50。反應氣體分配裝置145用於分配反應氣體至基板50。
源氣體分配裝置141與反應氣體分配裝置145各自被提供為蓮蓬頭,且可相互分開與安裝。此外,源氣體分配裝置141分配的源氣體被僅僅分配到與源氣體分配裝置141相對的源氣體區域121a。反應氣體分配裝置145分配的反應氣體僅僅被分配到與反應氣體分配裝置145相對的反應氣體區域121b。這種情況下,源氣體分配裝置141分配的源氣體以及反應氣體分配裝置145分配的反應氣體無須在被分配到基板50的中途彼此混合而被分配。
因此,隨著基板支撐裝置120旋轉,基板支撐裝置120上安裝與支撐的複數個基板50可順序地位於源氣體區域121a中,以及順序地位於反應氣體區域121b中。就是說,依照基板支撐裝置120的旋轉,當位於源氣體區域121a中且被供應源氣體的基板50位於反應氣體區域121b且被供應反應氣體時,透過源氣體與反應氣體之間的反應,源氣體被沈積於基板50上。
沈積製程中僅僅使用少量的各自被供應至製程腔室110的源氣體與反應氣體,源氣體與反應氣體各自的大部分連同沈積製程中出現的副產品被釋放到製程腔室110外部。
提供源氣體排氣管151、反應氣體排氣管153與排氣泵155,以用於將沈積製程中未使用的源氣體與反應氣體連同副產品釋放至製程腔室110外部。
源氣體排氣管151的一端連通製程腔室110的底部,以及源氣體排氣管151的另一端連通排氣泵155。反應氣體排氣管153的一端連通製程腔室110的底部,反應氣體排氣管153的另一端連通排氣泵155。這種情況下,源氣體排氣管151的一端與反應氣體排氣管153的一端各自與正好放置於源氣體區域121a與反應氣體區域121b下方的製程腔室110的底部連通。
因此,當提供的作為真空泵等的排氣泵155被驅動時,被分配至源氣體區域121a但是在沈積製程中未使用的源氣體被提取且流入源氣體排氣管151內,以及被分配至反應氣體區域121b但是在沈積在製程中未使用的反應氣體被提取且流入反應氣體排氣管153內。接下來,源氣體與反應氣體被改變為混合氣體且流入排氣泵155內,以及混合的氣體穿過排氣泵155的內部被釋放到排氣泵155外部。
沈積製程中未使用且穿過排氣管151流入排氣泵155內的源氣體與排氣泵155中出現的熱或者與穿過反應氣體排氣管153流入排氣泵155內的反應氣體反應,以及沈積於排氣泵155的內表面上。因為這個原因,可損壞排氣泵155。特別地,當源氣體用於低溫時,排氣泵155中堆積的源氣體可由於排氣泵155中出現的熱而爆炸。
為了避免這樣的問題,本發明實施例之基板處理設備包含廢氣分解模組,將流入源氣體排氣管151內的源氣體分解。
廢氣分解模組160被安裝於製程腔室110與排氣泵155之間的源氣體排氣管151附近,以及將流入源氣體排氣管151內的源氣體分解。這種情況下,廢氣分解模組160將源氣體的配位子(ligand)分解,以及配位子被分解的源氣體被供應至排氣泵155。
因為配位子與配位子被分解的源氣體處於不穩定的狀態,所以需要穩定配位子與配位子被分解的源氣體。為此,氧氣、一氧化二氮(N2 O)或臭氧被供應至廢氣分解模組160與排氣泵155之間的源氣體排氣管151。因此,配位子與配位子被分解的源氣體透過與氧氣、一氧化二氮或臭氧反應而處於穩定狀態。
接下來,配位子與配位子被分解的源氣體被改變為混合氣體,包含與其混合的反應氣體排氣管153的反應氣體。因此,配位子與配位子被分解的源氣體不與反應氣體或排氣泵155中出現的熱反應,由此,流入排氣泵155內的配位子被分解的源氣體與配位子不沈積於排氣泵155的內表面上。此外,排氣泵155中堆積的配位子被分解的源氣體與配位子不爆炸。
這種情況下,廢氣分解模組160被提供為產生電漿以分解源氣體的電漿產生器,或者加熱並分解源氣體的熱源。
圖3係為本發明另一實施例之基板處理設備之配置之示意圖。以下將僅僅描述圖3與圖1之間的差別。
如圖所示,本發明另一實施例之基板處理設備中,廢氣分解模組260分解的源氣體排氣管251之配位子、配位子被分解的源氣體以及反應氣體排氣管253的反應氣體可流入排氣泵255內,然後在排氣泵255中彼此混合。接下來,混合的氣體被釋放到排氣泵255外部。
以下,將結合圖1至圖4描述本發明實施例之基板處理設備之廢氣處理方法。圖4係為本發明實施例之基板處理設備之廢氣處理方法之流程圖。
如圖所示,在步驟S110中,在被分配至製程腔室110的源氣體與反應氣體中,在基板50上沈積薄膜的沈積製程中未使用的源氣體與反應氣體分別被供應至源氣體排氣管151與反應氣體排氣管153,以及被排出製程腔室110外部。
如上所述,源氣體排氣管151的一側連通製程腔室110,另一側連通排氣泵155。此外,反應氣體排氣管153的一側連通製程腔室110,另一側連通排氣泵155。因此,當驅動排氣泵155時,製程腔室110之源氣體與反應氣體分別被提取且被排出至源氣體排氣管151與反應氣體排氣管153。
接下來,在步驟S120中,流入源氣體排氣管151內的源氣體被廢氣分解模組160分解。此外,在步驟S130中,經過分解的源氣體排氣管151的源氣體與反應氣體排氣管153的反應氣體透過混合被改變為混合氣體。接下來,在步驟S140中,混合氣體穿過排氣泵155的內部被釋放到外部。
這種情況下,廢氣分解模組160可為產生電漿以分解源氣體的電漿產生器,或者可為加熱並分解源氣體的熱源。此外,配位子與源氣體排氣管151的源氣體分離。
如上所述,透過與單獨供應的氧氣、一氧化二氮或臭氧反應,配位子與配位子被分解的源氣體處於穩定狀態,可與排氣泵155的反應氣體混合,可流入排氣泵155內且被排出。或者,配位子及源氣體在排氣泵155中與反應氣體排氣管153之反應氣體混合且被排出。
本實施例之基板處理設備與廢氣之處理方法中,廢氣分解模組160(260)可分解源氣體之配位子。接下來,已經穩定的配位子、配位子被分解的源氣體以及反應氣體排氣管153(253)之反應氣體被改變為混合氣體。混合氣體流入排氣泵155(255)內且被排出,或者配位子及配位子被分解的源氣體與排氣泵155(255)中的反應氣體混合且被排出。因此,配位子與配位子被分解的源氣體未與排氣泵155(255)中出現的反應氣體或熱反應,由此,流入排氣泵155(255)內的配位子被分解的源氣體與配位子未沈積於排氣泵155(255)的內表面上。此外,排氣泵155(255)上堆積的配位子被分解的源氣體與配位子不爆炸。
本發明實施例之基板處理設備與廢氣之處理方法中,廢氣分解模組可分解製程腔室中排出的源氣體,以分解源氣體的配位子。此外,配位子與配位子已被分解的源氣體透過與單獨供應的氧氣、一氧化二氮或臭氧反應而處於穩定狀態,然後被改變為混合氣體,包含與其混合的反應氣體。接下來,混合氣體可流入排氣泵內且被排出。或者,配位子及源氣體與反應氣體混合且被排出。因此,配位子與配位子已被分解的源氣體不與排氣泵中出現的反應氣體或熱反應,由此,流入排氣泵內的配位子被分解的源氣體與配位子不會沈積於排氣泵之內表面上。另外,排氣泵中堆積的配位子被分解的源氣體與配位子不會爆炸。
雖然本發明以前述之實施例揭露如上,然其並非用以限定本發明。在不脫離本發明之精神和範圍內,所為之更動與潤飾,均屬本發明之專利保護範圍。關於本發明所界定之保護範圍請參考所附之申請專利範圍。
50‧‧‧基板110‧‧‧製程腔室111‧‧‧主體115‧‧‧蓋120‧‧‧基板支撐裝置121‧‧‧支架121a‧‧‧源氣體區域121b‧‧‧反應氣體區域125‧‧‧支撐軸130‧‧‧驅動部141‧‧‧源氣體分配裝置145‧‧‧反應氣體分配裝置151‧‧‧源氣體排氣管153‧‧‧反應氣體排氣管155‧‧‧排氣泵160‧‧‧廢氣分解模組251‧‧‧源氣體排氣管253‧‧‧反應氣體排氣管255‧‧‧排氣泵260‧‧‧廢氣分解模組
圖1係為本發明實施例之基板處理設備之配置之示意圖。 圖2係為圖1之平面剖視圖。 圖3係為本發明另一實施例之基板處理設備之配置之示意圖。 圖4係為本發明實施例之基板處理設備之廢氣處理方法之流程圖。
50‧‧‧基板
110‧‧‧製程腔室
111‧‧‧主體
115‧‧‧蓋
120‧‧‧基板支撐裝置
121‧‧‧支架
125‧‧‧支撐軸
130‧‧‧驅動部
141‧‧‧源氣體分配裝置
145‧‧‧反應氣體分配裝置
151‧‧‧源氣體排氣管
153‧‧‧反應氣體排氣管
155‧‧‧排氣泵
160‧‧‧廢氣分解模組

Claims (11)

  1. 一種基板處理設備,包含:一製程腔室,包含處理一基板之一空間;一基板支撐裝置,被安裝於該製程腔室中,該基板被放置於該基板支撐裝置上;一源氣體分配裝置,分配一源氣體僅至一源氣體區域;一反應氣體分配裝置,分配一反應氣體僅至一反應氣體區域;一源氣體排氣管,引導該製程腔室之該源氣體以被釋放至該製程腔室外部;一反應氣體排氣管,引導該製程腔室之該反應氣體以被釋放至該製程腔室外部;一排氣泵,連通該源氣體排氣管與該反應氣體排氣管之每一個,以分別排出該源氣體與該反應氣體至該源氣體排氣管與該反應氣體排氣管;以及一廢氣分解模組,被安裝於該製程腔室與該排氣泵之間的該源氣體排氣管中,以分解穿過該源氣體排氣管流入該排氣泵內之該源氣體,其中該源氣體排氣管的一端連通該源氣體區域,該源氣體排氣管的另一端連通該排氣泵,其中該反應氣體排氣管的一端連通該反應氣體區域,該反應氣體排氣管的另一端連通該排氣泵,其中該廢氣分解模組被安裝於該源氣體排氣管且位於該源氣體排氣管的該端與該源氣體排氣管的該另一端之間,其中被該廢氣分解模組分解的該源氣體與該反應氣體混合。
  2. 如請求項1所述之基板處理設備,其中該廢氣分解模組係為一電漿產生器或加熱該源氣體之一熱源。
  3. 如請求項1所述之基板處理設備,其中該廢氣分解模組所分解的該源氣體與該反應氣體排氣管之該反應氣體混合且流入該排氣泵內。
  4. 如請求項1所述之基板處理設備,其中該廢氣分解模組所分解的該源氣體在該排氣泵中與該反應氣體排氣管之該反應氣體混合。
  5. 如請求項1所述之基板處理設備,其中該源氣體排氣管之該源氣體之一配位子被該廢氣分解模組分解,以及該源氣體排氣管之該配位子與配位子被分解之該源氣體透過與一種材料反應被穩定且流入該排氣泵內,該一種材料係選擇自被供應至該源氣體排氣管之氧氣(O2)、一氧化二氮(N2O)與臭氧(O3)。
  6. 一種基板處理設備之廢氣處理方法,在一製程腔室中在一基板上沈積薄膜,被分配至該製程腔室之一源氣體與一反應氣體中,排出且處理沈積製程中未使用的該源氣體與該反應氣體,該廢氣處理方法包含:利用一排氣泵,分別排出該源氣體與該反應氣體至一源氣體排氣管與一反應氣體排氣管,該源氣體排氣管之一端連通該製程腔室,該源氣體排氣管之另一端連通該排氣泵,該反應氣體排氣管之一端連通該製程腔室,該反應氣體排氣管之另一端連通該排氣泵;將流入該源氣體排氣管之該源氣體分解;以及透過混合該源氣體排氣管之經過分解的該源氣體與該反應氣體排氣管之該反應氣體產生一混合氣體,釋放該混合氣體穿過該排氣泵之內部, 其中該源氣體排氣管的該端連通設置於該製程腔室的一源氣體區域,該源氣體排氣管的該另一端連通該排氣泵,其中該反應氣體排氣管的該端連通設置於該製程腔室一反應氣體區域,該反應氣體排氣管的該另一端連通該排氣泵,其中一廢氣分解模組被安裝於該源氣體排氣管且位於該源氣體排氣管的該端與該源氣體排氣管的該另一端之間,其中被該廢氣分解模組分解的該源氣體與該反應氣體混合。
  7. 如請求項6所述之基板處理設備之廢氣處理方法,其中該源氣體排氣管之該源氣體透過一電漿產生器所產生的電漿被分解,或者透過加熱被分解。
  8. 如請求項7所述之基板處理設備之廢氣處理方法,其中該源氣體排氣管之該源氣體之一配位子被分解。
  9. 如請求項8所述之基板處理設備之廢氣處理方法,其中透過與一種材料反應,該源氣體排氣管之該配位子以及配位子被分解的該源氣體被穩定且流入該排氣泵內,該一種材料係選擇自被供應至該源氣體排氣管之氧氣、一氧化二氮與臭氧。
  10. 如請求項6所述之基板處理設備之廢氣處理方法,其中該源氣體排氣管之經過分解的該源氣體以及該反應氣體排氣管之該反應氣體彼此混合且流入該排氣泵內。
  11. 如請求項6所述之基板處理設備之廢氣處理方法,其中該源氣體排氣管之經過分解的該源氣體以及該反應氣體排氣管之該反應氣體在該排氣泵中彼此混合。
TW105132269A 2015-10-05 2016-10-05 包含廢氣分解模組之基板處理設備與廢氣之處理方法 TWI709434B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2015-0139794 2015-10-05
KR1020150139794A KR102477302B1 (ko) 2015-10-05 2015-10-05 배기가스 분해기를 가지는 기판처리장치 및 그 배기가스 처리방법

Publications (2)

Publication Number Publication Date
TW201731590A TW201731590A (zh) 2017-09-16
TWI709434B true TWI709434B (zh) 2020-11-11

Family

ID=58487832

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105132269A TWI709434B (zh) 2015-10-05 2016-10-05 包含廢氣分解模組之基板處理設備與廢氣之處理方法

Country Status (6)

Country Link
US (3) US10808315B2 (zh)
JP (2) JP6924763B2 (zh)
KR (2) KR102477302B1 (zh)
CN (2) CN108352299B (zh)
TW (1) TWI709434B (zh)
WO (1) WO2017061742A1 (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102477302B1 (ko) 2015-10-05 2022-12-13 주성엔지니어링(주) 배기가스 분해기를 가지는 기판처리장치 및 그 배기가스 처리방법
JP7080140B2 (ja) * 2018-09-06 2022-06-03 東京エレクトロン株式会社 基板処理装置
US11078568B2 (en) * 2019-01-08 2021-08-03 Applied Materials, Inc. Pumping apparatus and method for substrate processing chambers

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200901287A (en) * 2006-12-26 2009-01-01 Cowin Dst Co Ltd Metal gas supply apparatus and remaining gas removal apparatus used for thin film depositing apparatus and method thereof

Family Cites Families (102)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5137701A (en) * 1984-09-17 1992-08-11 Mundt Randall S Apparatus and method for eliminating unwanted materials from a gas flow line
JP2888253B2 (ja) * 1989-07-20 1999-05-10 富士通株式会社 化学気相成長法およびその実施のための装置
US5647945A (en) * 1993-08-25 1997-07-15 Tokyo Electron Limited Vacuum processing apparatus
US5891350A (en) * 1994-12-15 1999-04-06 Applied Materials, Inc. Adjusting DC bias voltage in plasma chambers
US5772770A (en) * 1995-01-27 1998-06-30 Kokusai Electric Co, Ltd. Substrate processing apparatus
JP2872637B2 (ja) * 1995-07-10 1999-03-17 アプライド マテリアルズ インコーポレイテッド マイクロ波プラズマベースアプリケータ
US6193802B1 (en) * 1995-09-25 2001-02-27 Applied Materials, Inc. Parallel plate apparatus for in-situ vacuum line cleaning for substrate processing equipment
US6045618A (en) * 1995-09-25 2000-04-04 Applied Materials, Inc. Microwave apparatus for in-situ vacuum line cleaning for substrate processing equipment
US6194628B1 (en) * 1995-09-25 2001-02-27 Applied Materials, Inc. Method and apparatus for cleaning a vacuum line in a CVD system
US5965034A (en) * 1995-12-04 1999-10-12 Mc Electronics Co., Ltd. High frequency plasma process wherein the plasma is executed by an inductive structure in which the phase and anti-phase portion of the capacitive currents between the inductive structure and the plasma are balanced
US5928426A (en) * 1996-08-08 1999-07-27 Novellus Systems, Inc. Method and apparatus for treating exhaust gases from CVD, PECVD or plasma etch reactors
US6156107A (en) * 1996-11-13 2000-12-05 Tokyo Electron Limited Trap apparatus
JP3991375B2 (ja) * 1996-11-13 2007-10-17 東京エレクトロン株式会社 トラップ装置
EP0854210B1 (en) * 1996-12-19 2002-03-27 Toshiba Ceramics Co., Ltd. Vapor deposition apparatus for forming thin film
US6099649A (en) * 1997-12-23 2000-08-08 Applied Materials, Inc. Chemical vapor deposition hot-trap for unreacted precursor conversion and effluent removal
US20030164225A1 (en) * 1998-04-20 2003-09-04 Tadashi Sawayama Processing apparatus, exhaust processing process and plasma processing
US6366346B1 (en) * 1998-11-19 2002-04-02 Applied Materials, Inc. Method and apparatus for optical detection of effluent composition
JP2000256856A (ja) * 1999-03-11 2000-09-19 Tokyo Electron Ltd 処理装置及び処理装置用真空排気システム及び減圧cvd装置及び減圧cvd装置用真空排気システム及びトラップ装置
JP4092821B2 (ja) * 1999-07-27 2008-05-28 東京エレクトロン株式会社 処理装置の排気システム
US6255222B1 (en) * 1999-08-24 2001-07-03 Applied Materials, Inc. Method for removing residue from substrate processing chamber exhaust line for silicon-oxygen-carbon deposition process
US6773687B1 (en) * 1999-11-24 2004-08-10 Tokyo Electron Limited Exhaust apparatus for process apparatus and method of removing impurity gas
US6367412B1 (en) * 2000-02-17 2002-04-09 Applied Materials, Inc. Porous ceramic liner for a plasma source
US6391146B1 (en) * 2000-04-11 2002-05-21 Applied Materials, Inc. Erosion resistant gas energizer
US6673323B1 (en) * 2000-03-24 2004-01-06 Applied Materials, Inc. Treatment of hazardous gases in effluent
US6592817B1 (en) * 2000-03-31 2003-07-15 Applied Materials, Inc. Monitoring an effluent from a chamber
US6863019B2 (en) * 2000-06-13 2005-03-08 Applied Materials, Inc. Semiconductor device fabrication chamber cleaning method and apparatus with recirculation of cleaning gas
JP2002057144A (ja) * 2000-08-08 2002-02-22 Hitachi Ltd プラズマ処理装置および方法
AU2001277755A1 (en) * 2000-08-11 2002-02-25 Tokyo Electron Limited Device and method for processing substrate
JP4727085B2 (ja) * 2000-08-11 2011-07-20 東京エレクトロン株式会社 基板処理装置および処理方法
US6541353B1 (en) * 2000-08-31 2003-04-01 Micron Technology, Inc. Atomic layer doping apparatus and method
JP4720019B2 (ja) * 2001-05-18 2011-07-13 東京エレクトロン株式会社 冷却機構及び処理装置
CN1643179B (zh) 2002-01-17 2010-05-26 松德沃技术公司 Ald装置和方法
US7169540B2 (en) * 2002-04-12 2007-01-30 Tokyo Electron Limited Method of treatment of porous dielectric films to reduce damage during cleaning
US6858264B2 (en) * 2002-04-24 2005-02-22 Micron Technology, Inc. Chemical vapor deposition methods
US6869641B2 (en) * 2002-07-03 2005-03-22 Unaxis Balzers Ltd. Method and apparatus for ALD on a rotary susceptor
JP4227098B2 (ja) * 2002-07-05 2009-02-18 東京エレクトロン株式会社 基板処理装置のクリーニング方法および基板処理装置
US6843882B2 (en) * 2002-07-15 2005-01-18 Applied Materials, Inc. Gas flow control in a wafer processing system having multiple chambers for performing same process
KR100497748B1 (ko) * 2002-09-17 2005-06-29 주식회사 무한 반도체소자 제조용 원자층 증착 장치 및 원자층 증착 방법
JP4113755B2 (ja) * 2002-10-03 2008-07-09 東京エレクトロン株式会社 処理装置
JP4423914B2 (ja) * 2003-05-13 2010-03-03 東京エレクトロン株式会社 処理装置及びその使用方法
US20040235299A1 (en) * 2003-05-22 2004-11-25 Axcelis Technologies, Inc. Plasma ashing apparatus and endpoint detection process
US8580076B2 (en) * 2003-05-22 2013-11-12 Lam Research Corporation Plasma apparatus, gas distribution assembly for a plasma apparatus and processes therewith
US7083903B2 (en) * 2003-06-17 2006-08-01 Lam Research Corporation Methods of etching photoresist on substrates
US7408225B2 (en) * 2003-10-09 2008-08-05 Asm Japan K.K. Apparatus and method for forming thin film using upstream and downstream exhaust mechanisms
US7647886B2 (en) * 2003-10-15 2010-01-19 Micron Technology, Inc. Systems for depositing material onto workpieces in reaction chambers and methods for removing byproducts from reaction chambers
WO2005042160A2 (en) * 2003-10-29 2005-05-12 Asm America, Inc. Reaction system for growing a thin film
US7021903B2 (en) * 2003-12-31 2006-04-04 The Boc Group, Inc. Fore-line preconditioning for vacuum pumps
US7276122B2 (en) * 2004-04-21 2007-10-02 Mattson Technology, Inc. Multi-workpiece processing chamber
JP4879509B2 (ja) * 2004-05-21 2012-02-22 株式会社アルバック 真空成膜装置
US7845309B2 (en) * 2004-07-13 2010-12-07 Nordson Corporation Ultra high speed uniform plasma processing system
TWI279260B (en) * 2004-10-12 2007-04-21 Applied Materials Inc Endpoint detector and particle monitor
KR100614656B1 (ko) * 2005-01-25 2006-08-22 삼성전자주식회사 밸브 어셈블리 및 이를 가지는 반도체 제조 장치, 그리고트랩을 세정하는 방법
KR100599056B1 (ko) * 2005-07-21 2006-07-12 삼성전자주식회사 포토레지스트 제거 장치 및 방법
JP4282650B2 (ja) * 2005-10-03 2009-06-24 エルピーダメモリ株式会社 プラズマ処理装置
US20070207625A1 (en) * 2006-03-06 2007-09-06 Ravinder Aggarwal Semiconductor processing apparatus with multiple exhaust paths
US8932430B2 (en) * 2011-05-06 2015-01-13 Axcelis Technologies, Inc. RF coupled plasma abatement system comprising an integrated power oscillator
KR101213689B1 (ko) * 2006-06-12 2012-12-18 주식회사 테라텍 반도체 및 lcd 제조장치의 공정 반응 챔버의 배기부 및진공펌프의 세정장치
KR100905278B1 (ko) * 2007-07-19 2009-06-29 주식회사 아이피에스 박막증착장치, 박막증착방법 및 반도체 소자의 갭-필 방법
JP2009188332A (ja) * 2008-02-08 2009-08-20 Tokyo Electron Ltd プラズマ処理装置用基板載置台、プラズマ処理装置および絶縁皮膜の成膜方法
US7699935B2 (en) * 2008-06-19 2010-04-20 Applied Materials, Inc. Method and system for supplying a cleaning gas into a process chamber
US9997325B2 (en) * 2008-07-17 2018-06-12 Verity Instruments, Inc. Electron beam exciter for use in chemical analysis in processing systems
JP5696348B2 (ja) * 2008-08-09 2015-04-08 東京エレクトロン株式会社 金属回収方法、金属回収装置、排気系及びこれを用いた成膜装置
JP2010141248A (ja) * 2008-12-15 2010-06-24 Toshiba Corp 成膜装置及び成膜方法
KR101021372B1 (ko) * 2008-12-29 2011-03-14 주식회사 케이씨텍 원자층 증착장치
US8293013B2 (en) * 2008-12-30 2012-10-23 Intermolecular, Inc. Dual path gas distribution device
JP5634037B2 (ja) * 2009-06-18 2014-12-03 三菱重工業株式会社 排気構造、プラズマ処理装置及び方法
US8617347B2 (en) * 2009-08-06 2013-12-31 Applied Materials, Inc. Vacuum processing chambers incorporating a moveable flow equalizer
KR101108879B1 (ko) * 2009-08-31 2012-01-30 주식회사 원익아이피에스 가스분사장치 및 이를 이용한 기판처리장치
US20110136346A1 (en) * 2009-12-04 2011-06-09 Axcelis Technologies, Inc. Substantially Non-Oxidizing Plasma Treatment Devices and Processes
KR101620053B1 (ko) * 2009-12-22 2016-05-26 주식회사 원익아이피에스 기판처리장치
JP5597463B2 (ja) * 2010-07-05 2014-10-01 東京エレクトロン株式会社 基板処理装置及び基板処理方法
US9728429B2 (en) * 2010-07-27 2017-08-08 Lam Research Corporation Parasitic plasma prevention in plasma processing chambers
US20120222813A1 (en) * 2011-03-01 2012-09-06 Applied Materials, Inc. Vacuum chambers with shared pump
US9129778B2 (en) * 2011-03-18 2015-09-08 Lam Research Corporation Fluid distribution members and/or assemblies
KR101804128B1 (ko) * 2011-12-26 2017-12-05 주식회사 원익아이피에스 기판처리장치
JP2013163841A (ja) * 2012-02-10 2013-08-22 Jtekt Corp 炭素膜成膜装置および炭素膜成膜方法
JP5874469B2 (ja) * 2012-03-19 2016-03-02 東京エレクトロン株式会社 トラップ装置及び成膜装置
US9490152B2 (en) * 2012-05-29 2016-11-08 Taiwan Semiconductor Manufacturing Company, Ltd. Asymmetrical chamber configuration
JP2014116484A (ja) 2012-12-11 2014-06-26 Tokyo Electron Ltd 基板処理装置および処理容器内圧力調整方法
DE102014100092A1 (de) * 2013-01-25 2014-07-31 Aixtron Se CVD-Anlage mit Partikelabscheider
CN105308217B (zh) 2013-06-19 2018-06-12 旭化成株式会社 含氟系聚合物、阳离子交换膜和电解槽
US20150176124A1 (en) * 2013-12-19 2015-06-25 Intermolecular, Inc. Methods for Rapid Generation of ALD Saturation Curves Using Segmented Spatial ALD
KR101552666B1 (ko) * 2013-12-26 2015-09-11 피에스케이 주식회사 기판 처리 장치 및 방법
KR101505184B1 (ko) 2014-01-06 2015-03-23 주식회사 티지오테크 회전 부재를 포함하는 증착막 형성 장치
US9852905B2 (en) * 2014-01-16 2017-12-26 Taiwan Semiconductor Manufacturing Company, Ltd. Systems and methods for uniform gas flow in a deposition chamber
KR101871809B1 (ko) * 2014-02-14 2018-08-03 한국전자통신연구원 가스 모니터링 장치 및 그를 포함하는 플라즈마 공정 설비
US10153141B2 (en) 2014-02-14 2018-12-11 Electronics And Telecommunications Research Institute Apparatus for monitoring gas and plasma process equipment including the same
KR102351585B1 (ko) * 2014-03-06 2022-01-13 어플라이드 머티어리얼스, 인코포레이티드 플라즈마 포어라인 열 반응기 시스템
WO2015175163A1 (en) * 2014-05-16 2015-11-19 Applied Materials, Inc. Showerhead design
US9920425B2 (en) * 2014-08-13 2018-03-20 Toshiba Memory Corporation Semiconductor manufacturing apparatus and manufacturing method of semiconductor device
KR102297567B1 (ko) * 2014-09-01 2021-09-02 삼성전자주식회사 가스 주입 장치 및 이를 포함하는 박막 증착 장비
US9657757B2 (en) * 2015-03-16 2017-05-23 Taiwan Semiconductor Manufacturing Company Ltd. System of exhuast and operation method thereof
KR102638572B1 (ko) * 2015-06-17 2024-02-21 어플라이드 머티어리얼스, 인코포레이티드 프로세스 챔버 내의 가스 제어
KR102477302B1 (ko) * 2015-10-05 2022-12-13 주성엔지니어링(주) 배기가스 분해기를 가지는 기판처리장치 및 그 배기가스 처리방법
US10502651B2 (en) * 2015-10-05 2019-12-10 Inficon, Inc. Creating a mini environment for gas analysis
US20190035607A1 (en) * 2016-01-26 2019-01-31 Jusung Engineering Co., Ltd. Substrate processing apparatus
KR20170090194A (ko) * 2016-01-28 2017-08-07 삼성전자주식회사 복수 개의 가스 배출관 들 및 가스 센서들을 가진 반도체 소자 제조 설비
US11332824B2 (en) * 2016-09-13 2022-05-17 Lam Research Corporation Systems and methods for reducing effluent build-up in a pumping exhaust system
US10381200B2 (en) * 2017-03-08 2019-08-13 Applied Materials, Inc. Plasma chamber with tandem processing regions
JP7055035B2 (ja) * 2018-03-02 2022-04-15 東京エレクトロン株式会社 真空処理装置および排気制御方法
JP2020033619A (ja) * 2018-08-30 2020-03-05 キオクシア株式会社 排気配管装置及びクリーニング装置
US11078568B2 (en) * 2019-01-08 2021-08-03 Applied Materials, Inc. Pumping apparatus and method for substrate processing chambers

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200901287A (en) * 2006-12-26 2009-01-01 Cowin Dst Co Ltd Metal gas supply apparatus and remaining gas removal apparatus used for thin film depositing apparatus and method thereof

Also Published As

Publication number Publication date
JP2021176994A (ja) 2021-11-11
US20220220613A1 (en) 2022-07-14
US11970770B2 (en) 2024-04-30
KR102477302B1 (ko) 2022-12-13
KR20210093825A (ko) 2021-07-28
US11371142B2 (en) 2022-06-28
US20210002761A1 (en) 2021-01-07
KR102480978B1 (ko) 2022-12-23
US20180305815A1 (en) 2018-10-25
WO2017061742A1 (ko) 2017-04-13
US10808315B2 (en) 2020-10-20
CN108352299A (zh) 2018-07-31
JP6924763B2 (ja) 2021-08-25
CN115360075A (zh) 2022-11-18
KR20170040603A (ko) 2017-04-13
CN108352299B (zh) 2022-08-05
TW201731590A (zh) 2017-09-16
JP2018531326A (ja) 2018-10-25

Similar Documents

Publication Publication Date Title
US10903071B2 (en) Selective deposition of silicon oxide
US10490413B2 (en) Selective growth of silicon nitride
US10777407B2 (en) Selective deposition of silicon nitride on silicon oxide using catalytic control
US7964441B2 (en) Catalyst-assisted atomic layer deposition of silicon-containing films with integrated in-situ reactive treatment
TWI523970B (zh) 成膜裝置(一)
US11970770B2 (en) Substrate processing apparatus having exhaust gas decomposer, and exhaust gas processing method therefor
TW201139725A (en) Film deposition apparatus, film deposition method, and storage medium
JP6478847B2 (ja) 基板処理装置
TW201608053A (zh) 背面沉積設備及方法
TW201026882A (en) Film deposition apparatus, substrate process apparatus, and turntable
JP6196106B2 (ja) シリコン酸化膜の製造方法
JP2018531326A6 (ja) 排ガス分解装置を有する基板処理装置及び該装置用排ガス処理方法
TWI761743B (zh) 基板處理裝置、半導體裝置的製造方法及半導體裝置的製造程式
JP5421812B2 (ja) 半導体基板の成膜装置及び方法
JP2006032459A (ja) 化学気相成長装置
KR20210037545A (ko) 성막 장치 및 성막 장치의 운용 방법
JPH01297820A (ja) 基体へのフィルム被着装置およびその方法
JP2009094421A (ja) 基板処理装置
JPS62208624A (ja) 気相成長装置