JP2018531326A - 排ガス分解装置を有する基板処理装置及び該装置用排ガス処理方法 - Google Patents
排ガス分解装置を有する基板処理装置及び該装置用排ガス処理方法 Download PDFInfo
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- 238000000354 decomposition reaction Methods 0.000 title claims abstract description 43
- 238000003672 processing method Methods 0.000 title claims abstract description 12
- 239000007789 gas Substances 0.000 claims abstract description 235
- 239000012495 reaction gas Substances 0.000 claims abstract description 74
- 239000003446 ligand Substances 0.000 claims abstract description 57
- 238000005137 deposition process Methods 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 13
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- 239000000126 substance Substances 0.000 claims 2
- 239000006227 byproduct Substances 0.000 description 5
- 238000000151 deposition Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000007736 thin film deposition technique Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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Abstract
Description
Claims (11)
- 基板を処理する空間を有する処理チャンバ、
前記処理チャンバ内に設置した、上に基板を配置した基板支持手段、
ソースガスを前記基板に分配するソースガス分配手段、
反応ガスを前記基板に分配する反応ガス分配手段、
前記処理チャンバのソースガスを、該処理チャンバの外に放出させるよう案内するソースガス排気ライン、
前記処理チャンバの反応ガスを、該処理チャンバの外に放出させるよう案内する反応ガス排気ライン、
前記ソースガスと前記反応ガスを、それぞれ前記ソースガス排気ライン及び反応ガス排気ラインに排出し得るように、該ソースガス排気ライン及び該反応ガス排気ラインに連通する排気ポンプ、及び
前記ソースガス排気ラインを介して前記排気ポンプ内に流れ込むソースガスを分解する、前記処理チャンバと前記排気ポンプ間の前記ソースガス排気ラインに設置された排ガス分解モジュールから構成されることを特徴とする、基板処理装置。 - 前記排ガス分解モジュールは、プラズマ生成装置又は、前記ソースガスを加熱する熱源であることを特徴とする、請求項1記載の基板処理装置。
- 前記排ガス分解モジュールにより分解されたソースガスを、前記反応ガス排気ラインの反応ガスと混合させ、これを前記排気ポンプに流し込ませることを特徴とする、請求項1記載の基板処理装置。
- 前記排ガス分解モジュールにより分解されたソースガスを、前記排気ポンプ内で反応ガス排気ラインの反応ガスと反応させることを特徴とする、請求項1記載の基板処理装置。
- 前記ソースガス排気ラインのソースガスのリガンドを前記排ガス分解モジュールにより分解させ、
前記ソースガス排気ラインの前記リガンドと前記リガンド分解ソースガスを、前記ソースガス排気ラインに供給したO2、N2O、O3から選択した1の物質と反応させて安定化させ、これを前記排気ポンプに流し込むことを特徴とする、請求項1記載の基板処理装置。 - 処理チャンバに分配され、基板上に薄膜を堆積させるソースガス及び反応ガスの内、堆積処理において使用しない該ソースガス及び該反応ガスを排出処理する、基板処理装置の排ガス処理方法において、
排気ポンプを用いて、ソースガス及び反応ガスをソースガス排気ライン及び反応ガス排気ラインにそれぞれ排出し、該ソースガス排気ラインの一端を、該処理チャンバに連通させ、該ソースガス排気ラインの他端を、前記排気ポンプに連通させ、前記反応ガス排気ラインの一端を、処理チャンバに連通させ、該該反応ガス排気ラインの他端を該排気ポンプに連通させ、
前記ソースガス排気ラインに流れ込んだ前記ソースガスを分解し、及び
前記ソースガス排気ラインの分解ソースガスを前記反応ガス排気ラインの反応ガスと混合してできた混合ガスを、前記排気ポンプの内部を介して放出することを特徴とする、基板処理装置の排ガス処理方法。 - 前記ソースガス排気ラインのソースガスを、プラズマ生成装置によって生成したプラズマにより分解し、又は、これを加熱により分解することを特徴とする、請求項6記載の排ガス処理方法。
- 前記ソースガス排気ラインのソースガスのリガンドを分解することを特徴とする、請求項7記載の排ガス処理方法。
- 前記ソースガス排気ラインの前記リガンドと前記リガンド分解ソースガスを、前記ソースガス排気ラインに供給したO2、N2O、O3から選択した1の物質と反応させて安定化させ、これを前記排気ポンプに流し込むことを特徴とする、請求項8記載の排ガス処理方法。
- 前記ソースガス排気ラインの分解ソースガスと前記反応ガス排気ラインの反応ガスを混合させて、これを前記排気ポンプに流し込むことを特徴とする、請求項6記載の排ガス処理方法。
- 前記ソースガス排気ラインの分解ソースガスと前記反応ガス排気ラインの反応ガスを前記排気ポンプ内で混合させることを特徴とする、請求項6記載の排ガス処理方法。
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PCT/KR2016/011045 WO2017061742A1 (ko) | 2015-10-05 | 2016-10-04 | 배기가스 분해기를 가지는 기판처리장치 및 그 배기가스 처리방법 |
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JP7080140B2 (ja) * | 2018-09-06 | 2022-06-03 | 東京エレクトロン株式会社 | 基板処理装置 |
CN113169101B (zh) * | 2019-01-08 | 2022-09-30 | 应用材料公司 | 用于基板处理腔室的泵送设备与方法 |
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