DE69935994D1 - Plasmareaktor - Google Patents
PlasmareaktorInfo
- Publication number
- DE69935994D1 DE69935994D1 DE69935994T DE69935994T DE69935994D1 DE 69935994 D1 DE69935994 D1 DE 69935994D1 DE 69935994 T DE69935994 T DE 69935994T DE 69935994 T DE69935994 T DE 69935994T DE 69935994 D1 DE69935994 D1 DE 69935994D1
- Authority
- DE
- Germany
- Prior art keywords
- plasma reactor
- reactor
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Plasma & Fusion (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Analytical Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP27936898 | 1998-09-14 | ||
JP10279368A JP2000091247A (ja) | 1998-09-14 | 1998-09-14 | プラズマ処理装置 |
PCT/JP1999/004980 WO2000016385A1 (fr) | 1998-09-14 | 1999-09-13 | Reacteur au plasma |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69935994D1 true DE69935994D1 (de) | 2007-06-14 |
DE69935994T2 DE69935994T2 (de) | 2008-01-10 |
Family
ID=17610191
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69935994T Expired - Fee Related DE69935994T2 (de) | 1998-09-14 | 1999-09-13 | Plasmareaktor |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP1119030B1 (de) |
JP (1) | JP2000091247A (de) |
KR (1) | KR20010079817A (de) |
DE (1) | DE69935994T2 (de) |
TW (1) | TW421820B (de) |
WO (1) | WO2000016385A1 (de) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3935850B2 (ja) * | 2003-01-31 | 2007-06-27 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
US7464581B2 (en) * | 2004-03-29 | 2008-12-16 | Tokyo Electron Limited | Vacuum apparatus including a particle monitoring unit, particle monitoring method and program, and window member for use in the particle monitoring |
JP4504061B2 (ja) | 2004-03-29 | 2010-07-14 | 東京エレクトロン株式会社 | プラズマ処理方法 |
KR100672820B1 (ko) * | 2004-11-12 | 2007-01-22 | 삼성전자주식회사 | 플라즈마를 사용한 피처리체의 처리 방법 |
JP4663406B2 (ja) * | 2005-05-30 | 2011-04-06 | 京セラ株式会社 | 試料ホルダとそれを用いた検査装置及び検査方法 |
JP4659771B2 (ja) * | 2007-02-13 | 2011-03-30 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
US7782591B2 (en) * | 2007-06-22 | 2010-08-24 | Lam Research Corporation | Methods of and apparatus for reducing amounts of particles on a wafer during wafer de-chucking |
US20110045208A1 (en) * | 2008-02-12 | 2011-02-24 | Imott Inc. | Diamond-like carbon film forming apparatus and method of forming diamond-like carbon film |
TWI593048B (zh) * | 2009-07-21 | 2017-07-21 | 尼康股份有限公司 | Substrate processing system, substrate holder, substrate holder pair, substrate bonding apparatus, and device manufacturing method |
JP5039120B2 (ja) * | 2009-12-07 | 2012-10-03 | 東京エレクトロン株式会社 | プラズマ処理装置用のアルミナ部材及びプラズマ処理装置用のアルミナ部材の製造方法 |
CN113972162A (zh) | 2014-08-15 | 2022-01-25 | 应用材料公司 | 在等离子体增强化学气相沉积系统中高温下使用压缩应力或拉伸应力处理晶片的方法和装置 |
JP6827287B2 (ja) * | 2016-09-28 | 2021-02-10 | 株式会社日立ハイテク | プラズマ処理装置の運転方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63143273A (ja) * | 1986-12-05 | 1988-06-15 | Anelva Corp | Ecr装置 |
JPH04390A (ja) * | 1990-04-18 | 1992-01-06 | Hitachi Ltd | マイクロ波プラズマ処理装置 |
JPH047658U (de) * | 1990-05-10 | 1992-01-23 | ||
JPH04318175A (ja) * | 1991-04-16 | 1992-11-09 | Sony Corp | バイアスecrプラズマcvd装置 |
JP3229987B2 (ja) * | 1993-05-14 | 2001-11-19 | 日本電信電話株式会社 | 中性粒子加工方法およびその装置 |
JPH07106307A (ja) * | 1993-10-07 | 1995-04-21 | Mitsubishi Electric Corp | プラズマ処理装置およびプラズマ処理方法 |
US5556474A (en) * | 1993-12-14 | 1996-09-17 | Nissin Electric Co., Ltd. | Plasma processing apparatus |
US5811022A (en) * | 1994-11-15 | 1998-09-22 | Mattson Technology, Inc. | Inductive plasma reactor |
JPH0922875A (ja) * | 1995-07-06 | 1997-01-21 | Nissin Electric Co Ltd | 薄膜気相成長装置 |
-
1998
- 1998-09-14 JP JP10279368A patent/JP2000091247A/ja active Pending
-
1999
- 1999-09-13 EP EP99943304A patent/EP1119030B1/de not_active Expired - Lifetime
- 1999-09-13 TW TW088115760A patent/TW421820B/zh not_active IP Right Cessation
- 1999-09-13 DE DE69935994T patent/DE69935994T2/de not_active Expired - Fee Related
- 1999-09-13 KR KR1020017003260A patent/KR20010079817A/ko not_active Application Discontinuation
- 1999-09-13 WO PCT/JP1999/004980 patent/WO2000016385A1/ja active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
EP1119030A4 (de) | 2004-06-09 |
TW421820B (en) | 2001-02-11 |
DE69935994T2 (de) | 2008-01-10 |
WO2000016385A1 (fr) | 2000-03-23 |
KR20010079817A (ko) | 2001-08-22 |
JP2000091247A (ja) | 2000-03-31 |
EP1119030B1 (de) | 2007-05-02 |
EP1119030A1 (de) | 2001-07-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |