DE69519008D1 - Plasmareaktor - Google Patents

Plasmareaktor

Info

Publication number
DE69519008D1
DE69519008D1 DE69519008T DE69519008T DE69519008D1 DE 69519008 D1 DE69519008 D1 DE 69519008D1 DE 69519008 T DE69519008 T DE 69519008T DE 69519008 T DE69519008 T DE 69519008T DE 69519008 D1 DE69519008 D1 DE 69519008D1
Authority
DE
Germany
Prior art keywords
plasma reactor
reactor
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69519008T
Other languages
English (en)
Other versions
DE69519008T2 (de
Inventor
Dan Maydan
Steve S Y Mak
Donald Olgado
Gerald Z Yin
Timothy D Driscoll
Brian Shieh
James S Papanu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of DE69519008D1 publication Critical patent/DE69519008D1/de
Application granted granted Critical
Publication of DE69519008T2 publication Critical patent/DE69519008T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45576—Coaxial inlets for each gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • ing And Chemical Polishing (AREA)
DE69519008T 1994-09-16 1995-08-18 Plasmareaktor Expired - Fee Related DE69519008T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/307,888 US5643394A (en) 1994-09-16 1994-09-16 Gas injection slit nozzle for a plasma process reactor

Publications (2)

Publication Number Publication Date
DE69519008D1 true DE69519008D1 (de) 2000-11-09
DE69519008T2 DE69519008T2 (de) 2001-03-29

Family

ID=23191595

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69519008T Expired - Fee Related DE69519008T2 (de) 1994-09-16 1995-08-18 Plasmareaktor

Country Status (5)

Country Link
US (1) US5643394A (de)
EP (1) EP0702392B1 (de)
JP (1) JPH08288266A (de)
KR (1) KR960012360A (de)
DE (1) DE69519008T2 (de)

Families Citing this family (144)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5746875A (en) * 1994-09-16 1998-05-05 Applied Materials, Inc. Gas injection slit nozzle for a plasma process reactor
JPH0925586A (ja) * 1995-07-11 1997-01-28 Anelva Corp 基板処理装置および基板処理方法
US6342135B1 (en) * 1995-11-02 2002-01-29 Taiwan Semiconductor Manufacturing Company Sputter etching chamber with improved uniformity
US6159297A (en) 1996-04-25 2000-12-12 Applied Materials, Inc. Semiconductor process chamber and processing method
US5885358A (en) * 1996-07-09 1999-03-23 Applied Materials, Inc. Gas injection slit nozzle for a plasma process reactor
JPH10134997A (ja) * 1996-10-24 1998-05-22 Samsung Electron Co Ltd ２次電位による放電を除去したプラズマ処理装置
US5900064A (en) * 1997-05-01 1999-05-04 Applied Materials, Inc. Plasma process chamber
JP3470557B2 (ja) * 1997-06-27 2003-11-25 株式会社日立製作所 プラズマ処理装置
KR100466867B1 (ko) * 1997-07-03 2005-04-19 삼성전자주식회사 증착속도가일정한플라즈마인헨스드화학기상증착장치
EP0803587B1 (de) * 1997-07-15 2000-10-04 Unaxis Trading AG Verfahren und Vorrichtung zur Sputterbeschichtung
US6165910A (en) * 1997-12-29 2000-12-26 Lam Research Corporation Self-aligned contacts for semiconductor device
JP4124383B2 (ja) * 1998-04-09 2008-07-23 財団法人国際科学振興財団 マイクロ波励起プラズマ装置用のシャワープレート及びマイクロ波励起プラズマ装置
US6436253B1 (en) * 1998-05-20 2002-08-20 Taiwan Semiconductor Manufacturing Company Sputter etching chamber with improved uniformity
KR100519543B1 (ko) * 1998-07-09 2005-12-08 삼성전자주식회사 반도체소자 제조용 플라즈마 식각장치
US6117401A (en) * 1998-08-04 2000-09-12 Juvan; Christian Physico-chemical conversion reactor system with a fluid-flow-field constrictor
JP4044218B2 (ja) * 1998-08-28 2008-02-06 松下電器産業株式会社 プラズマ処理装置
US6074953A (en) * 1998-08-28 2000-06-13 Micron Technology, Inc. Dual-source plasma etchers, dual-source plasma etching methods, and methods of forming planar coil dual-source plasma etchers
KR100292410B1 (ko) * 1998-09-23 2001-06-01 윤종용 불순물 오염이 억제된 반도체 제조용 반응 챔버
US6230651B1 (en) * 1998-12-30 2001-05-15 Lam Research Corporation Gas injection system for plasma processing
KR100806097B1 (ko) 1999-09-30 2008-02-21 램 리써치 코포레이션 예비 처리된 가스 분배판
JP2003514388A (ja) * 1999-11-15 2003-04-15 ラム リサーチ コーポレーション 処理システム用の材料およびガス化学剤
US6518705B2 (en) * 1999-11-15 2003-02-11 Lam Research Corporation Method and apparatus for producing uniform process rates
US6320320B1 (en) * 1999-11-15 2001-11-20 Lam Research Corporation Method and apparatus for producing uniform process rates
US6391787B1 (en) * 2000-10-13 2002-05-21 Lam Research Corporation Stepped upper electrode for plasma processing uniformity
CN1229855C (zh) * 2001-03-28 2005-11-30 大见忠弘 等离子体处理装置
US6663025B1 (en) * 2001-03-29 2003-12-16 Lam Research Corporation Diffuser and rapid cycle chamber
KR100408405B1 (ko) * 2001-05-03 2003-12-06 삼성전자주식회사 반도체 소자의 제조 장치
US7103443B2 (en) * 2001-06-29 2006-09-05 Tokyo Electron Limited Directed gas injection apparatus for semiconductor processing
TWI224815B (en) * 2001-08-01 2004-12-01 Tokyo Electron Ltd Gas processing apparatus and gas processing method
US20030070620A1 (en) 2001-10-15 2003-04-17 Cooperberg David J. Tunable multi-zone gas injection system
US7371467B2 (en) 2002-01-08 2008-05-13 Applied Materials, Inc. Process chamber component having electroplated yttrium containing coating
US20030192645A1 (en) * 2002-04-16 2003-10-16 Applied Materials, Inc. Method and apparatus for creating circumferential process gas flow in a semiconductor wafer plasma reactor chamber
US6861094B2 (en) * 2002-04-25 2005-03-01 Micron Technology, Inc. Methods for forming thin layers of materials on micro-device workpieces
JP4847009B2 (ja) 2002-05-23 2011-12-28 ラム リサーチ コーポレーション 半導体処理プラズマ反応器用の多部品電極および多部品電極の一部を取り換える方法
US6838114B2 (en) 2002-05-24 2005-01-04 Micron Technology, Inc. Methods for controlling gas pulsing in processes for depositing materials onto micro-device workpieces
US7118783B2 (en) * 2002-06-26 2006-10-10 Micron Technology, Inc. Methods and apparatus for vapor processing of micro-device workpieces
US6821347B2 (en) * 2002-07-08 2004-11-23 Micron Technology, Inc. Apparatus and method for depositing materials onto microelectronic workpieces
US20040011464A1 (en) * 2002-07-16 2004-01-22 Applied Materials, Inc. Promotion of independence between degree of dissociation of reactive gas and the amount of ionization of dilutant gas via diverse gas injection
JP2005536042A (ja) * 2002-08-08 2005-11-24 トリコン テクノロジーズ リミティド シャワーヘッドの改良
US7270713B2 (en) * 2003-01-07 2007-09-18 Applied Materials, Inc. Tunable gas distribution plate assembly
US6942753B2 (en) * 2003-04-16 2005-09-13 Applied Materials, Inc. Gas distribution plate assembly for large area plasma enhanced chemical vapor deposition
US7335396B2 (en) 2003-04-24 2008-02-26 Micron Technology, Inc. Methods for controlling mass flow rates and pressures in passageways coupled to reaction chambers and systems for depositing material onto microfeature workpieces in reaction chambers
US7235138B2 (en) 2003-08-21 2007-06-26 Micron Technology, Inc. Microfeature workpiece processing apparatus and methods for batch deposition of materials on microfeature workpieces
US6829056B1 (en) 2003-08-21 2004-12-07 Michael Barnes Monitoring dimensions of features at different locations in the processing of substrates
US7344755B2 (en) 2003-08-21 2008-03-18 Micron Technology, Inc. Methods and apparatus for processing microfeature workpieces; methods for conditioning ALD reaction chambers
US7422635B2 (en) 2003-08-28 2008-09-09 Micron Technology, Inc. Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpieces
US7056806B2 (en) 2003-09-17 2006-06-06 Micron Technology, Inc. Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces
US7282239B2 (en) 2003-09-18 2007-10-16 Micron Technology, Inc. Systems and methods for depositing material onto microfeature workpieces in reaction chambers
US7323231B2 (en) 2003-10-09 2008-01-29 Micron Technology, Inc. Apparatus and methods for plasma vapor deposition processes
US7647886B2 (en) 2003-10-15 2010-01-19 Micron Technology, Inc. Systems for depositing material onto workpieces in reaction chambers and methods for removing byproducts from reaction chambers
US20050092245A1 (en) * 2003-11-03 2005-05-05 Ahn-Sik Moon Plasma chemical vapor deposition apparatus having an improved nozzle configuration
JP4273932B2 (ja) * 2003-11-07 2009-06-03 株式会社島津製作所 表面波励起プラズマｃｖｄ装置
US7258892B2 (en) 2003-12-10 2007-08-21 Micron Technology, Inc. Methods and systems for controlling temperature during microfeature workpiece processing, e.g., CVD deposition
US7892357B2 (en) * 2004-01-12 2011-02-22 Axcelis Technologies, Inc. Gas distribution plate assembly for plasma reactors
KR101025323B1 (ko) * 2004-01-13 2011-03-29 가부시키가이샤 아루박 에칭 장치 및 에칭 방법
US7906393B2 (en) * 2004-01-28 2011-03-15 Micron Technology, Inc. Methods for forming small-scale capacitor structures
US7584942B2 (en) * 2004-03-31 2009-09-08 Micron Technology, Inc. Ampoules for producing a reaction gas and systems for depositing materials onto microfeature workpieces in reaction chambers
US20050241767A1 (en) * 2004-04-30 2005-11-03 Ferris David S Multi-piece baffle plate assembly for a plasma processing system
US8133554B2 (en) 2004-05-06 2012-03-13 Micron Technology, Inc. Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces
US7699932B2 (en) 2004-06-02 2010-04-20 Micron Technology, Inc. Reactors, systems and methods for depositing thin films onto microfeature workpieces
US8349128B2 (en) 2004-06-30 2013-01-08 Applied Materials, Inc. Method and apparatus for stable plasma processing
US20060021703A1 (en) * 2004-07-29 2006-02-02 Applied Materials, Inc. Dual gas faceplate for a showerhead in a semiconductor wafer processing system
US7510624B2 (en) 2004-12-17 2009-03-31 Applied Materials, Inc. Self-cooling gas delivery apparatus under high vacuum for high density plasma applications
US7722719B2 (en) * 2005-03-07 2010-05-25 Applied Materials, Inc. Gas baffle and distributor for semiconductor processing chamber
US8298336B2 (en) * 2005-04-01 2012-10-30 Lam Research Corporation High strip rate downstream chamber
TWI329135B (en) * 2005-11-04 2010-08-21 Applied Materials Inc Apparatus and process for plasma-enhanced atomic layer deposition
US7743731B2 (en) * 2006-03-30 2010-06-29 Tokyo Electron Limited Reduced contaminant gas injection system and method of using
TWI335450B (en) * 2006-05-15 2011-01-01 Ind Tech Res Inst Film cleaning method and apparatus
KR20080023172A (ko) * 2006-09-08 2008-03-12 주성엔지니어링(주) 기판 가장자리 식각 장치
US7476291B2 (en) * 2006-09-28 2009-01-13 Lam Research Corporation High chamber temperature process and chamber design for photo-resist stripping and post-metal etch passivation
JP2008124424A (ja) * 2006-10-16 2008-05-29 Tokyo Electron Ltd プラズマ成膜装置及びプラズマ成膜方法
US20080128088A1 (en) * 2006-10-30 2008-06-05 Jusung Engineering Co., Ltd. Etching apparatus for edges of substrate
US7909961B2 (en) 2006-10-30 2011-03-22 Applied Materials, Inc. Method and apparatus for photomask plasma etching
US7943005B2 (en) 2006-10-30 2011-05-17 Applied Materials, Inc. Method and apparatus for photomask plasma etching
US7740706B2 (en) 2006-11-28 2010-06-22 Applied Materials, Inc. Gas baffle and distributor for semiconductor processing chamber
US20080124944A1 (en) 2006-11-28 2008-05-29 Applied Materials, Inc. Gas baffle and distributor for semiconductor processing chamber
US7758698B2 (en) 2006-11-28 2010-07-20 Applied Materials, Inc. Dual top gas feed through distributor for high density plasma chamber
CN101680090B (zh) * 2007-06-19 2012-11-07 东京毅力科创株式会社 真空处理装置
JP4931716B2 (ja) * 2007-07-18 2012-05-16 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ生成室
US8673080B2 (en) 2007-10-16 2014-03-18 Novellus Systems, Inc. Temperature controlled showerhead
US8137463B2 (en) * 2007-12-19 2012-03-20 Applied Materials, Inc. Dual zone gas injection nozzle
JP5230225B2 (ja) * 2008-03-06 2013-07-10 東京エレクトロン株式会社 蓋部品、処理ガス拡散供給装置、及び基板処理装置
KR101404010B1 (ko) * 2008-03-06 2014-06-12 주성엔지니어링(주) 기판 가장자리 식각장치 및 이를 이용한 기판 가장자리식각방법
JP4956469B2 (ja) * 2008-03-24 2012-06-20 株式会社ニューフレアテクノロジー 半導体製造装置
JP4731580B2 (ja) * 2008-03-27 2011-07-27 東京エレクトロン株式会社 成膜方法および成膜装置
US8252114B2 (en) * 2008-03-28 2012-08-28 Tokyo Electron Limited Gas distribution system and method for distributing process gas in a processing system
JP5665265B2 (ja) * 2008-06-24 2015-02-04 東京エレクトロン株式会社 チャンバー部品を介してプロセス流体を導入する方法及びシステム
WO2010004836A1 (ja) * 2008-07-09 2010-01-14 東京エレクトロン株式会社 プラズマ処理装置
US9353625B2 (en) * 2009-01-13 2016-05-31 General Electric Technology Gmbh Device for cleaning oxidized or corroded components in the presence of a halogenous gas mixture
TWI399820B (zh) * 2009-05-06 2013-06-21 Au Optronics Corp 電漿處理裝置及其絕緣蓋板
US8685120B2 (en) * 2009-08-11 2014-04-01 General Electric Company Method and apparatus to produce synthetic gas
JP5457109B2 (ja) * 2009-09-02 2014-04-02 東京エレクトロン株式会社 プラズマ処理装置
TWI369251B (en) * 2010-02-01 2012-08-01 Ind Tech Res Inst Gas distribution module and gas distribution scanning apparatus using the same
US20110256692A1 (en) * 2010-04-14 2011-10-20 Applied Materials, Inc. Multiple precursor concentric delivery showerhead
WO2011159690A2 (en) * 2010-06-15 2011-12-22 Applied Materials, Inc. Multiple precursor showerhead with by-pass ports
DE102010027224A1 (de) * 2010-07-15 2012-01-19 Forschungszentrum Jülich GmbH Elektrode zur Erzeugung eines Plasmas, Plasmakammer mit dieser Elektrode und Verfahren zur in situ-Analyse oder -in situ-Bearbeitung einer Schicht oder des Plasmas
US8662408B2 (en) 2010-08-11 2014-03-04 General Electric Company Annular injector assembly and methods of assembling the same
US8721747B2 (en) 2010-08-11 2014-05-13 General Electric Company Modular tip injection devices and method of assembling same
US8869598B2 (en) 2010-08-11 2014-10-28 General Electric Company Methods and systems for monitoring a seal assembly
US8828109B2 (en) 2010-08-11 2014-09-09 General Electric Company Method and apparatus for assembling injection devices
US8663348B2 (en) * 2010-08-11 2014-03-04 General Electric Company Apparatus for removing heat from injection devices and method of assembling same
CN102443781A (zh) * 2010-09-30 2012-05-09 财团法人工业技术研究院 气体喷洒模块及其气体喷洒扫描装置
KR101234595B1 (ko) * 2011-02-16 2013-02-19 피에스케이 주식회사 플라즈마 발생 유닛 및 플라즈마 처리 장치
CN106884157B (zh) 2011-03-04 2019-06-21 诺发系统公司 混合型陶瓷喷淋头
US9129778B2 (en) 2011-03-18 2015-09-08 Lam Research Corporation Fluid distribution members and/or assemblies
JP5912747B2 (ja) * 2011-03-31 2016-04-27 東京エレクトロン株式会社 ガス吐出機能付電極およびプラズマ処理装置
KR20140058647A (ko) * 2011-09-07 2014-05-14 어플라이드 머티어리얼스, 인코포레이티드 선형 증착 챔버에서 가스를 분배하고 플라즈마를 적용하기 위한 장치 및 방법
US9947512B2 (en) 2011-10-25 2018-04-17 Lam Research Corporation Window and mounting arrangement for twist-and-lock gas injector assembly of inductively coupled plasma chamber
US9941100B2 (en) * 2011-12-16 2018-04-10 Taiwan Semiconductor Manufacturing Company, Ltd. Adjustable nozzle for plasma deposition and a method of controlling the adjustable nozzle
JP2014049529A (ja) * 2012-08-30 2014-03-17 Tokyo Electron Ltd プラズマ処理装置及び金属の酸化膜を洗浄する方法
JP6046752B2 (ja) * 2013-01-30 2016-12-21 京セラ株式会社 ガスノズルおよびこれを用いたプラズマ装置
TWI654333B (zh) 2013-12-18 2019-03-21 美商蘭姆研究公司 具有均勻性折流板之半導體基板處理設備
KR101509379B1 (ko) * 2014-01-03 2015-04-07 (주)아이씨디 플라즈마 발생 시스템의 노즐
US10741365B2 (en) * 2014-05-05 2020-08-11 Lam Research Corporation Low volume showerhead with porous baffle
US10465288B2 (en) * 2014-08-15 2019-11-05 Applied Materials, Inc. Nozzle for uniform plasma processing
CN105448633B (zh) * 2014-08-22 2018-05-29 中微半导体设备(上海)有限公司 等离子体处理装置
JP6339218B2 (ja) 2014-10-29 2018-06-06 東芝三菱電機産業システム株式会社 成膜装置へのガス噴射装置
US11007497B2 (en) 2014-10-29 2021-05-18 Toshiba Mitsubishi-Electric Industrial Systems Corporation Gas jetting apparatus
CN104451583B (zh) * 2015-01-05 2017-05-10 合肥京东方显示光源有限公司 磁控溅射真空室进气装置及磁控溅射设备
JP6584786B2 (ja) * 2015-02-13 2019-10-02 株式会社日立ハイテクノロジーズ プラズマイオン源および荷電粒子ビーム装置
US10378107B2 (en) 2015-05-22 2019-08-13 Lam Research Corporation Low volume showerhead with faceplate holes for improved flow uniformity
US10023959B2 (en) 2015-05-26 2018-07-17 Lam Research Corporation Anti-transient showerhead
JP6054470B2 (ja) 2015-05-26 2016-12-27 株式会社日本製鋼所 原子層成長装置
JP6054471B2 (ja) 2015-05-26 2016-12-27 株式会社日本製鋼所 原子層成長装置および原子層成長装置排気部
JP5990626B1 (ja) * 2015-05-26 2016-09-14 株式会社日本製鋼所 原子層成長装置
US11004661B2 (en) * 2015-09-04 2021-05-11 Applied Materials, Inc. Process chamber for cyclic and selective material removal and etching
KR102553629B1 (ko) * 2016-06-17 2023-07-11 삼성전자주식회사 플라즈마 처리 장치
US10573522B2 (en) 2016-08-16 2020-02-25 Lam Research Corporation Method for preventing line bending during metal fill process
KR102546317B1 (ko) * 2016-11-15 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기체 공급 유닛 및 이를 포함하는 기판 처리 장치
US10818479B2 (en) * 2017-11-12 2020-10-27 Taiwan Semiconductor Manufacturing Company, Ltd. Grounding cap module, gas injection device and etching apparatus
US20200013591A1 (en) * 2018-02-15 2020-01-09 Yield Engineering Systems, Inc. Plasma Spreading Apparatus And System, And Method Of Spreading Plasma In Process Ovens
US10943768B2 (en) * 2018-04-20 2021-03-09 Applied Materials, Inc. Modular high-frequency source with integrated gas distribution
US11549175B2 (en) 2018-05-03 2023-01-10 Lam Research Corporation Method of depositing tungsten and other metals in 3D NAND structures
US10927461B2 (en) * 2018-08-31 2021-02-23 Applied Materials, Inc. Gas diffuser support structure for reduced particle generation
US11094511B2 (en) 2018-11-13 2021-08-17 Applied Materials, Inc. Processing chamber with substrate edge enhancement processing
US10883174B2 (en) * 2018-11-27 2021-01-05 Applied Materials, Inc. Gas diffuser mounting plate for reduced particle generation
WO2020123119A1 (en) * 2018-12-10 2020-06-18 Applied Materials, Inc. Dome stress isolating layer
CN113366144B (zh) 2019-01-28 2023-07-07 朗姆研究公司 金属膜的沉积
KR20210127262A (ko) 2019-03-11 2021-10-21 램 리써치 코포레이션 몰리브덴-함유 막들의 증착을 위한 전구체들
US20220290300A1 (en) * 2019-08-28 2022-09-15 Lam Research Corporation Metal deposition
KR20210092693A (ko) * 2020-01-15 2021-07-26 에이에스엠 아이피 홀딩 비.브이. 샤워헤드 어셈블리 및 부품
JP2024510254A (ja) * 2021-03-19 2024-03-06 ラム リサーチ コーポレーション プロセスチャンバの遠隔プラズマ洗浄用のノズル
KR102528893B1 (ko) * 2021-05-13 2023-05-04 (주)코마테크놀로지 Hdp cvd공정용 사파이어 소재를 이용한 플라즈마 디퓨전 노즐 제조방법
CN114059020B (zh) * 2022-01-07 2022-03-18 北京航空航天大学 一种提高ps-pvd沉积过程中气相比例的装置及方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57202733A (en) * 1981-06-09 1982-12-11 Matsushita Electric Ind Co Ltd Dry etching device
US4512283A (en) * 1982-02-01 1985-04-23 Texas Instruments Incorporated Plasma reactor sidewall shield
JPS58170536A (ja) * 1982-03-31 1983-10-07 Fujitsu Ltd プラズマ処理方法及びその装置
JPS6167922A (ja) * 1984-09-12 1986-04-08 Fujitsu Ltd プラズマ処理装置
US4612077A (en) * 1985-07-29 1986-09-16 The Perkin-Elmer Corporation Electrode for plasma etching system
JPS62123721A (ja) * 1985-11-25 1987-06-05 Hitachi Ltd 処理装置
US5000113A (en) * 1986-12-19 1991-03-19 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
JPH0261078A (ja) * 1988-08-24 1990-03-01 Nec Kyushu Ltd 平行平板型プラズマエッチング装置
JP2677630B2 (ja) * 1988-09-30 1997-11-17 株式会社東芝 情報記録装置
JPH07101685B2 (ja) * 1989-01-26 1995-11-01 富士通株式会社 マイクロ波プラズマ処理装置
US4993358A (en) * 1989-07-28 1991-02-19 Watkins-Johnson Company Chemical vapor deposition reactor and method of operation
JPH03188627A (ja) * 1989-12-18 1991-08-16 Sharp Corp プラズマエッチング装置
US5074456A (en) * 1990-09-18 1991-12-24 Lam Research Corporation Composite electrode for plasma processes
EP0552491B1 (de) * 1992-01-24 1998-07-15 Applied Materials, Inc. Plasmaätzverfahren und Reaktor zur Plasmabearbeitung
KR100238626B1 (ko) * 1992-07-28 2000-02-01 히가시 데쓰로 플라즈마 처리장치

Also Published As

Publication number Publication date
US5643394A (en) 1997-07-01
DE69519008T2 (de) 2001-03-29
EP0702392A3 (de) 1996-04-10
KR960012360A (de) 1996-04-20
JPH08288266A (ja) 1996-11-01
EP0702392B1 (de) 2000-10-04
EP0702392A2 (de) 1996-03-20

Similar Documents

Publication Publication Date Title
DE69519008D1 (de) Plasmareaktor
DE69522243D1 (de) Ruhreaktor
DE69426463T2 (de) Mikrowellenplasmareaktor
DE69218720T2 (de) Plasmareaktor
DE69632958D1 (de) Sicherheitsbehälter
NO985499D0 (no) Likestr°mstransformator/reaktor
DE69520772D1 (de) Plasmagenerator
DE69404397D1 (de) Verbesserte Suszeptor Ausführung
DE59506125D1 (de) Plasmareaktor
DE69627250D1 (de) Abschirmvorrichtung
DE59901183D1 (de) Plasmareaktor
DE69617305T2 (de) Wechselrichter
DE59501094D1 (de) Glovebox
DE59611459D1 (de) Plasmareaktor
DE19581551T1 (de) Gasreaktor
DE69935994D1 (de) Plasmareaktor
ID22642A (id) Reaktor
DE69401863T2 (de) Verbesserte Suszeptor Ausführung
KR970004998A (ko) 시일드케이스
DE59510194D1 (de) Dose
DE29608804U1 (de) Abschirmung
NO952847D0 (no) Omformer
NO943204D0 (no) Reaktor
KR940019741U (ko) 개량형 콘센트
ITMI960684U3 (it) Reattore gravitazionale-centripeto

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee