DE69218720T2 - Plasmareaktor - Google Patents
PlasmareaktorInfo
- Publication number
- DE69218720T2 DE69218720T2 DE69218720T DE69218720T DE69218720T2 DE 69218720 T2 DE69218720 T2 DE 69218720T2 DE 69218720 T DE69218720 T DE 69218720T DE 69218720 T DE69218720 T DE 69218720T DE 69218720 T2 DE69218720 T2 DE 69218720T2
- Authority
- DE
- Germany
- Prior art keywords
- plasma reactor
- reactor
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
- H01J37/32688—Multi-cusp fields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32743—Means for moving the material to be treated for introducing the material into processing chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US78066791A | 1991-10-17 | 1991-10-17 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69218720D1 DE69218720D1 (de) | 1997-05-07 |
DE69218720T2 true DE69218720T2 (de) | 1997-07-17 |
Family
ID=25120283
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69218720T Expired - Fee Related DE69218720T2 (de) | 1991-10-17 | 1992-10-08 | Plasmareaktor |
Country Status (5)
Country | Link |
---|---|
US (1) | US5346579A (de) |
EP (1) | EP0537950B1 (de) |
JP (1) | JP2581494B2 (de) |
KR (1) | KR930008976A (de) |
DE (1) | DE69218720T2 (de) |
Families Citing this family (50)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6475333B1 (en) * | 1993-07-26 | 2002-11-05 | Nihon Shinku Gijutsu Kabushiki Kaisha | Discharge plasma processing device |
US5484485A (en) * | 1993-10-29 | 1996-01-16 | Chapman; Robert A. | Plasma reactor with magnet for protecting an electrostatic chuck from the plasma |
US5518547A (en) * | 1993-12-23 | 1996-05-21 | International Business Machines Corporation | Method and apparatus for reducing particulates in a plasma tool through steady state flows |
TW303480B (en) * | 1996-01-24 | 1997-04-21 | Applied Materials Inc | Magnetically confined plasma reactor for processing a semiconductor wafer |
US5707452A (en) * | 1996-07-08 | 1998-01-13 | Applied Microwave Plasma Concepts, Inc. | Coaxial microwave applicator for an electron cyclotron resonance plasma source |
US5880034A (en) * | 1997-04-29 | 1999-03-09 | Princeton University | Reduction of semiconductor structure damage during reactive ion etching |
US5866303A (en) | 1997-10-15 | 1999-02-02 | Kabushiki Kaisha Toshiba | Resist developing method by magnetic field controlling, resist developing apparatus and method of fabricating semiconductor device |
US6374831B1 (en) | 1999-02-04 | 2002-04-23 | Applied Materials, Inc. | Accelerated plasma clean |
US6254745B1 (en) * | 1999-02-19 | 2001-07-03 | Tokyo Electron Limited | Ionized physical vapor deposition method and apparatus with magnetic bucket and concentric plasma and material source |
TW460610B (en) * | 1999-03-03 | 2001-10-21 | Anelva Corp | A plasma processing system |
US7067034B2 (en) | 2000-03-27 | 2006-06-27 | Lam Research Corporation | Method and apparatus for plasma forming inner magnetic bucket to control a volume of a plasma |
US6863835B1 (en) | 2000-04-25 | 2005-03-08 | James D. Carducci | Magnetic barrier for plasma in chamber exhaust |
US7159597B2 (en) | 2001-06-01 | 2007-01-09 | Applied Materials, Inc. | Multistep remote plasma clean process |
US6868856B2 (en) | 2001-07-13 | 2005-03-22 | Applied Materials, Inc. | Enhanced remote plasma cleaning |
US6843858B2 (en) | 2002-04-02 | 2005-01-18 | Applied Materials, Inc. | Method of cleaning a semiconductor processing chamber |
US6876154B2 (en) * | 2002-04-24 | 2005-04-05 | Trikon Holdings Limited | Plasma processing apparatus |
GB0209291D0 (en) * | 2002-04-24 | 2002-06-05 | Trikon Technologies Ltd | Plasma processing apparatus |
US20040231798A1 (en) * | 2002-09-13 | 2004-11-25 | Applied Materials, Inc. | Gas delivery system for semiconductor processing |
US7316761B2 (en) * | 2003-02-03 | 2008-01-08 | Applied Materials, Inc. | Apparatus for uniformly etching a dielectric layer |
CN101457338B (zh) | 2003-02-14 | 2011-04-27 | 应用材料股份有限公司 | 利用含氢自由基清洁自生氧化物的方法和设备 |
US7037376B2 (en) | 2003-04-11 | 2006-05-02 | Applied Materials Inc. | Backflush chamber clean |
US7431772B2 (en) | 2004-03-09 | 2008-10-07 | Applied Materials, Inc. | Gas distributor having directed gas flow and cleaning method |
US20060021633A1 (en) * | 2004-07-27 | 2006-02-02 | Applied Materials, Inc. | Closed loop clean gas control |
US20060162661A1 (en) * | 2005-01-22 | 2006-07-27 | Applied Materials, Inc. | Mixing energized and non-energized gases for silicon nitride deposition |
US7741577B2 (en) * | 2006-03-28 | 2010-06-22 | Battelle Energy Alliance, Llc | Modular hybrid plasma reactor and related systems and methods |
US8536481B2 (en) | 2008-01-28 | 2013-09-17 | Battelle Energy Alliance, Llc | Electrode assemblies, plasma apparatuses and systems including electrode assemblies, and methods for generating plasma |
US7967913B2 (en) | 2008-10-22 | 2011-06-28 | Applied Materials, Inc. | Remote plasma clean process with cycled high and low pressure clean steps |
JP5380464B2 (ja) * | 2009-02-06 | 2014-01-08 | キヤノンアネルバ株式会社 | プラズマ処理装置、プラズマ処理方法、および被処理基板を備える素子の製造方法 |
US20100270262A1 (en) * | 2009-04-22 | 2010-10-28 | Applied Materials, Inc. | Etching low-k dielectric or removing resist with a filtered ionized gas |
EP3222749A1 (de) | 2009-05-13 | 2017-09-27 | SiO2 Medical Products, Inc. | Entgasungsverfahren zur prüfung einer beschichteten oberfläche |
WO2013170052A1 (en) | 2012-05-09 | 2013-11-14 | Sio2 Medical Products, Inc. | Saccharide protective coating for pharmaceutical package |
US9458536B2 (en) | 2009-07-02 | 2016-10-04 | Sio2 Medical Products, Inc. | PECVD coating methods for capped syringes, cartridges and other articles |
US8343318B2 (en) * | 2010-03-25 | 2013-01-01 | Novellus Systems Inc. | Magnetic lensing to improve deposition uniformity in a physical vapor deposition (PVD) process |
US11624115B2 (en) | 2010-05-12 | 2023-04-11 | Sio2 Medical Products, Inc. | Syringe with PECVD lubrication |
US20110278260A1 (en) | 2010-05-14 | 2011-11-17 | Applied Materials, Inc. | Inductive plasma source with metallic shower head using b-field concentrator |
US9878101B2 (en) | 2010-11-12 | 2018-01-30 | Sio2 Medical Products, Inc. | Cyclic olefin polymer vessels and vessel coating methods |
US9272095B2 (en) | 2011-04-01 | 2016-03-01 | Sio2 Medical Products, Inc. | Vessels, contact surfaces, and coating and inspection apparatus and methods |
EP2776603B1 (de) | 2011-11-11 | 2019-03-06 | SiO2 Medical Products, Inc. | Passivierungs-, ph-schutz- oder schmierbeschichtung für arzneimittelverpackung, beschichtungsverfahren und vorrichtung |
US9554968B2 (en) | 2013-03-11 | 2017-01-31 | Sio2 Medical Products, Inc. | Trilayer coated pharmaceutical packaging |
US11116695B2 (en) | 2011-11-11 | 2021-09-14 | Sio2 Medical Products, Inc. | Blood sample collection tube |
CA2890066C (en) | 2012-11-01 | 2021-11-09 | Sio2 Medical Products, Inc. | Coating inspection method |
EP2920567B1 (de) | 2012-11-16 | 2020-08-19 | SiO2 Medical Products, Inc. | Verfahren und vorrichtung zur erkennung von schnellen sperrbeschichtungsintegritätseigenschaften |
US9764093B2 (en) | 2012-11-30 | 2017-09-19 | Sio2 Medical Products, Inc. | Controlling the uniformity of PECVD deposition |
CN105705676B (zh) | 2012-11-30 | 2018-09-07 | Sio2医药产品公司 | 控制在医用注射器、药筒等上的pecvd沉积的均匀性 |
US20160015898A1 (en) | 2013-03-01 | 2016-01-21 | Sio2 Medical Products, Inc. | Plasma or cvd pre-treatment for lubricated pharmaceutical package, coating process and apparatus |
US9937099B2 (en) | 2013-03-11 | 2018-04-10 | Sio2 Medical Products, Inc. | Trilayer coated pharmaceutical packaging with low oxygen transmission rate |
US9863042B2 (en) | 2013-03-15 | 2018-01-09 | Sio2 Medical Products, Inc. | PECVD lubricity vessel coating, coating process and apparatus providing different power levels in two phases |
EP3122917B1 (de) | 2014-03-28 | 2020-05-06 | SiO2 Medical Products, Inc. | Antistatische beschichtungen für kunststoffbehälter |
WO2017031354A2 (en) | 2015-08-18 | 2017-02-23 | Sio2 Medical Products, Inc. | Pharmaceutical and other packaging with low oxygen transmission rate |
US11545343B2 (en) | 2019-04-22 | 2023-01-03 | Board Of Trustees Of Michigan State University | Rotary plasma reactor |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4483737A (en) * | 1983-01-31 | 1984-11-20 | University Of Cincinnati | Method and apparatus for plasma etching a substrate |
FR2583250B1 (fr) * | 1985-06-07 | 1989-06-30 | France Etat | Procede et dispositif d'excitation d'un plasma par micro-ondes a la resonance cyclotronique electronique |
JPS62147733A (ja) * | 1985-12-23 | 1987-07-01 | Anelva Corp | プラズマ処理装置 |
US4842683A (en) * | 1986-12-19 | 1989-06-27 | Applied Materials, Inc. | Magnetic field-enhanced plasma etch reactor |
JPH07120648B2 (ja) * | 1987-01-12 | 1995-12-20 | 日本真空技術株式会社 | マイクロ波プラズマ処理装置 |
KR880013424A (ko) * | 1987-04-08 | 1988-11-30 | 미타 가츠시게 | 플라즈머 장치 |
JP2670623B2 (ja) * | 1988-09-19 | 1997-10-29 | アネルバ株式会社 | マイクロ波プラズマ処理装置 |
US5133826A (en) * | 1989-03-09 | 1992-07-28 | Applied Microwave Plasma Concepts, Inc. | Electron cyclotron resonance plasma source |
US5032205A (en) * | 1989-05-05 | 1991-07-16 | Wisconsin Alumni Research Foundation | Plasma etching apparatus with surface magnetic fields |
US5032202A (en) * | 1989-10-03 | 1991-07-16 | Martin Marietta Energy Systems, Inc. | Plasma generating apparatus for large area plasma processing |
JP3020580B2 (ja) * | 1990-09-28 | 2000-03-15 | 株式会社日立製作所 | マイクロ波プラズマ処理装置 |
-
1992
- 1992-10-08 DE DE69218720T patent/DE69218720T2/de not_active Expired - Fee Related
- 1992-10-08 EP EP92309196A patent/EP0537950B1/de not_active Expired - Lifetime
- 1992-10-14 JP JP4275864A patent/JP2581494B2/ja not_active Expired - Lifetime
- 1992-10-16 KR KR1019920019013A patent/KR930008976A/ko not_active Application Discontinuation
-
1993
- 1993-07-19 US US08/093,445 patent/US5346579A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE69218720D1 (de) | 1997-05-07 |
EP0537950B1 (de) | 1997-04-02 |
JP2581494B2 (ja) | 1997-02-12 |
JPH05259120A (ja) | 1993-10-08 |
EP0537950A1 (de) | 1993-04-21 |
US5346579A (en) | 1994-09-13 |
KR930008976A (ko) | 1993-05-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |