DE69218720T2 - Plasmareaktor - Google Patents

Plasmareaktor

Info

Publication number
DE69218720T2
DE69218720T2 DE69218720T DE69218720T DE69218720T2 DE 69218720 T2 DE69218720 T2 DE 69218720T2 DE 69218720 T DE69218720 T DE 69218720T DE 69218720 T DE69218720 T DE 69218720T DE 69218720 T2 DE69218720 T2 DE 69218720T2
Authority
DE
Germany
Prior art keywords
plasma reactor
reactor
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69218720T
Other languages
English (en)
Other versions
DE69218720D1 (de
Inventor
Joel M Cook
John R Trow
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of DE69218720D1 publication Critical patent/DE69218720D1/de
Application granted granted Critical
Publication of DE69218720T2 publication Critical patent/DE69218720T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32623Mechanical discharge control means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192Microwave generated discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3266Magnetic control means
    • H01J37/32688Multi-cusp fields
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32733Means for moving the material to be treated
    • H01J37/32743Means for moving the material to be treated for introducing the material into processing chamber
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32Processing objects by plasma generation
    • H01J2237/33Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334Etching
DE69218720T 1991-10-17 1992-10-08 Plasmareaktor Expired - Fee Related DE69218720T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US78066791A 1991-10-17 1991-10-17

Publications (2)

Publication Number Publication Date
DE69218720D1 DE69218720D1 (de) 1997-05-07
DE69218720T2 true DE69218720T2 (de) 1997-07-17

Family

ID=25120283

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69218720T Expired - Fee Related DE69218720T2 (de) 1991-10-17 1992-10-08 Plasmareaktor

Country Status (5)

Country Link
US (1) US5346579A (de)
EP (1) EP0537950B1 (de)
JP (1) JP2581494B2 (de)
KR (1) KR930008976A (de)
DE (1) DE69218720T2 (de)

Families Citing this family (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6475333B1 (en) * 1993-07-26 2002-11-05 Nihon Shinku Gijutsu Kabushiki Kaisha Discharge plasma processing device
US5484485A (en) * 1993-10-29 1996-01-16 Chapman; Robert A. Plasma reactor with magnet for protecting an electrostatic chuck from the plasma
US5518547A (en) * 1993-12-23 1996-05-21 International Business Machines Corporation Method and apparatus for reducing particulates in a plasma tool through steady state flows
TW303480B (en) * 1996-01-24 1997-04-21 Applied Materials Inc Magnetically confined plasma reactor for processing a semiconductor wafer
US5707452A (en) * 1996-07-08 1998-01-13 Applied Microwave Plasma Concepts, Inc. Coaxial microwave applicator for an electron cyclotron resonance plasma source
US5880034A (en) * 1997-04-29 1999-03-09 Princeton University Reduction of semiconductor structure damage during reactive ion etching
US5866303A (en) 1997-10-15 1999-02-02 Kabushiki Kaisha Toshiba Resist developing method by magnetic field controlling, resist developing apparatus and method of fabricating semiconductor device
US6374831B1 (en) 1999-02-04 2002-04-23 Applied Materials, Inc. Accelerated plasma clean
US6254745B1 (en) * 1999-02-19 2001-07-03 Tokyo Electron Limited Ionized physical vapor deposition method and apparatus with magnetic bucket and concentric plasma and material source
TW460610B (en) * 1999-03-03 2001-10-21 Anelva Corp A plasma processing system
US7067034B2 (en) 2000-03-27 2006-06-27 Lam Research Corporation Method and apparatus for plasma forming inner magnetic bucket to control a volume of a plasma
US6863835B1 (en) 2000-04-25 2005-03-08 James D. Carducci Magnetic barrier for plasma in chamber exhaust
US7159597B2 (en) 2001-06-01 2007-01-09 Applied Materials, Inc. Multistep remote plasma clean process
US6868856B2 (en) 2001-07-13 2005-03-22 Applied Materials, Inc. Enhanced remote plasma cleaning
US6843858B2 (en) 2002-04-02 2005-01-18 Applied Materials, Inc. Method of cleaning a semiconductor processing chamber
US6876154B2 (en) * 2002-04-24 2005-04-05 Trikon Holdings Limited Plasma processing apparatus
GB0209291D0 (en) * 2002-04-24 2002-06-05 Trikon Technologies Ltd Plasma processing apparatus
US20040231798A1 (en) * 2002-09-13 2004-11-25 Applied Materials, Inc. Gas delivery system for semiconductor processing
US7316761B2 (en) * 2003-02-03 2008-01-08 Applied Materials, Inc. Apparatus for uniformly etching a dielectric layer
CN101457338B (zh) 2003-02-14 2011-04-27 应用材料股份有限公司 利用含氢自由基清洁自生氧化物的方法和设备
US7037376B2 (en) 2003-04-11 2006-05-02 Applied Materials Inc. Backflush chamber clean
US7431772B2 (en) 2004-03-09 2008-10-07 Applied Materials, Inc. Gas distributor having directed gas flow and cleaning method
US20060021633A1 (en) * 2004-07-27 2006-02-02 Applied Materials, Inc. Closed loop clean gas control
US20060162661A1 (en) * 2005-01-22 2006-07-27 Applied Materials, Inc. Mixing energized and non-energized gases for silicon nitride deposition
US7741577B2 (en) * 2006-03-28 2010-06-22 Battelle Energy Alliance, Llc Modular hybrid plasma reactor and related systems and methods
US8536481B2 (en) 2008-01-28 2013-09-17 Battelle Energy Alliance, Llc Electrode assemblies, plasma apparatuses and systems including electrode assemblies, and methods for generating plasma
US7967913B2 (en) 2008-10-22 2011-06-28 Applied Materials, Inc. Remote plasma clean process with cycled high and low pressure clean steps
JP5380464B2 (ja) * 2009-02-06 2014-01-08 キヤノンアネルバ株式会社 プラズマ処理装置、プラズマ処理方法、および被処理基板を備える素子の製造方法
US20100270262A1 (en) * 2009-04-22 2010-10-28 Applied Materials, Inc. Etching low-k dielectric or removing resist with a filtered ionized gas
EP3222749A1 (de) 2009-05-13 2017-09-27 SiO2 Medical Products, Inc. Entgasungsverfahren zur prüfung einer beschichteten oberfläche
WO2013170052A1 (en) 2012-05-09 2013-11-14 Sio2 Medical Products, Inc. Saccharide protective coating for pharmaceutical package
US9458536B2 (en) 2009-07-02 2016-10-04 Sio2 Medical Products, Inc. PECVD coating methods for capped syringes, cartridges and other articles
US8343318B2 (en) * 2010-03-25 2013-01-01 Novellus Systems Inc. Magnetic lensing to improve deposition uniformity in a physical vapor deposition (PVD) process
US11624115B2 (en) 2010-05-12 2023-04-11 Sio2 Medical Products, Inc. Syringe with PECVD lubrication
US20110278260A1 (en) 2010-05-14 2011-11-17 Applied Materials, Inc. Inductive plasma source with metallic shower head using b-field concentrator
US9878101B2 (en) 2010-11-12 2018-01-30 Sio2 Medical Products, Inc. Cyclic olefin polymer vessels and vessel coating methods
US9272095B2 (en) 2011-04-01 2016-03-01 Sio2 Medical Products, Inc. Vessels, contact surfaces, and coating and inspection apparatus and methods
EP2776603B1 (de) 2011-11-11 2019-03-06 SiO2 Medical Products, Inc. Passivierungs-, ph-schutz- oder schmierbeschichtung für arzneimittelverpackung, beschichtungsverfahren und vorrichtung
US9554968B2 (en) 2013-03-11 2017-01-31 Sio2 Medical Products, Inc. Trilayer coated pharmaceutical packaging
US11116695B2 (en) 2011-11-11 2021-09-14 Sio2 Medical Products, Inc. Blood sample collection tube
CA2890066C (en) 2012-11-01 2021-11-09 Sio2 Medical Products, Inc. Coating inspection method
EP2920567B1 (de) 2012-11-16 2020-08-19 SiO2 Medical Products, Inc. Verfahren und vorrichtung zur erkennung von schnellen sperrbeschichtungsintegritätseigenschaften
US9764093B2 (en) 2012-11-30 2017-09-19 Sio2 Medical Products, Inc. Controlling the uniformity of PECVD deposition
CN105705676B (zh) 2012-11-30 2018-09-07 Sio2医药产品公司 控制在医用注射器、药筒等上的pecvd沉积的均匀性
US20160015898A1 (en) 2013-03-01 2016-01-21 Sio2 Medical Products, Inc. Plasma or cvd pre-treatment for lubricated pharmaceutical package, coating process and apparatus
US9937099B2 (en) 2013-03-11 2018-04-10 Sio2 Medical Products, Inc. Trilayer coated pharmaceutical packaging with low oxygen transmission rate
US9863042B2 (en) 2013-03-15 2018-01-09 Sio2 Medical Products, Inc. PECVD lubricity vessel coating, coating process and apparatus providing different power levels in two phases
EP3122917B1 (de) 2014-03-28 2020-05-06 SiO2 Medical Products, Inc. Antistatische beschichtungen für kunststoffbehälter
WO2017031354A2 (en) 2015-08-18 2017-02-23 Sio2 Medical Products, Inc. Pharmaceutical and other packaging with low oxygen transmission rate
US11545343B2 (en) 2019-04-22 2023-01-03 Board Of Trustees Of Michigan State University Rotary plasma reactor

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4483737A (en) * 1983-01-31 1984-11-20 University Of Cincinnati Method and apparatus for plasma etching a substrate
FR2583250B1 (fr) * 1985-06-07 1989-06-30 France Etat Procede et dispositif d'excitation d'un plasma par micro-ondes a la resonance cyclotronique electronique
JPS62147733A (ja) * 1985-12-23 1987-07-01 Anelva Corp プラズマ処理装置
US4842683A (en) * 1986-12-19 1989-06-27 Applied Materials, Inc. Magnetic field-enhanced plasma etch reactor
JPH07120648B2 (ja) * 1987-01-12 1995-12-20 日本真空技術株式会社 マイクロ波プラズマ処理装置
KR880013424A (ko) * 1987-04-08 1988-11-30 미타 가츠시게 플라즈머 장치
JP2670623B2 (ja) * 1988-09-19 1997-10-29 アネルバ株式会社 マイクロ波プラズマ処理装置
US5133826A (en) * 1989-03-09 1992-07-28 Applied Microwave Plasma Concepts, Inc. Electron cyclotron resonance plasma source
US5032205A (en) * 1989-05-05 1991-07-16 Wisconsin Alumni Research Foundation Plasma etching apparatus with surface magnetic fields
US5032202A (en) * 1989-10-03 1991-07-16 Martin Marietta Energy Systems, Inc. Plasma generating apparatus for large area plasma processing
JP3020580B2 (ja) * 1990-09-28 2000-03-15 株式会社日立製作所 マイクロ波プラズマ処理装置

Also Published As

Publication number Publication date
DE69218720D1 (de) 1997-05-07
EP0537950B1 (de) 1997-04-02
JP2581494B2 (ja) 1997-02-12
JPH05259120A (ja) 1993-10-08
EP0537950A1 (de) 1993-04-21
US5346579A (en) 1994-09-13
KR930008976A (ko) 1993-05-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee