JP6339218B2 - 成膜装置へのガス噴射装置 - Google Patents
成膜装置へのガス噴射装置 Download PDFInfo
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- JP6339218B2 JP6339218B2 JP2016556093A JP2016556093A JP6339218B2 JP 6339218 B2 JP6339218 B2 JP 6339218B2 JP 2016556093 A JP2016556093 A JP 2016556093A JP 2016556093 A JP2016556093 A JP 2016556093A JP 6339218 B2 JP6339218 B2 JP 6339218B2
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- Prior art keywords
- gas
- gas injection
- film forming
- injection device
- forming apparatus
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- 238000002347 injection Methods 0.000 title claims description 218
- 239000007924 injection Substances 0.000 title claims description 218
- 239000007789 gas Substances 0.000 claims description 696
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 24
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 21
- 230000004888 barrier function Effects 0.000 claims description 21
- 238000010438 heat treatment Methods 0.000 claims description 21
- 239000001301 oxygen Substances 0.000 claims description 20
- 229910052760 oxygen Inorganic materials 0.000 claims description 20
- 239000002243 precursor Substances 0.000 claims description 19
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 18
- 239000006185 dispersion Substances 0.000 claims description 17
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 12
- 239000001257 hydrogen Substances 0.000 claims description 10
- 229910052739 hydrogen Inorganic materials 0.000 claims description 10
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 8
- 229910001882 dioxygen Inorganic materials 0.000 claims description 8
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen(.) Chemical compound [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 7
- -1 hydrogen compound Chemical class 0.000 claims description 6
- 239000010453 quartz Substances 0.000 claims description 4
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
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- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical compound [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 description 7
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
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- 229910052735 hafnium Inorganic materials 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 229910017464 nitrogen compound Inorganic materials 0.000 description 2
- 150000002830 nitrogen compounds Chemical class 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 150000002927 oxygen compounds Chemical class 0.000 description 2
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- 230000002159 abnormal effect Effects 0.000 description 1
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- 230000008878 coupling Effects 0.000 description 1
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- 150000002902 organometallic compounds Chemical class 0.000 description 1
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- 125000004430 oxygen atom Chemical group O* 0.000 description 1
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- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J4/00—Feed or outlet devices; Feed or outlet control devices
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
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Description
図2は、本実施の形態に係る非加熱、加熱および放電ガスの成膜装置へのガス噴射装置(以下、単にガス噴射装置と称する)100と処理チャンバー200とから構成されるリモートプラズマ型成膜処理システムの構成を、模式的に示した斜視図である。
本実施の形態では、ガス噴射セル部23において、ガスG1を加熱させることにより、ガスG1をラジカルガス化させる。そして、本実施の形態に係るガス噴射セル部23は、ラジカルガスG2を噴射する。図4は、加熱ガスを噴射する、本実施の形態に係るガス噴射装置100の構成を示す図である。
本実施の形態に係るガス噴射装置100では、ガス噴射セル部23のガス隙間doにおいて、誘電体バリア放電を発生させ、当該誘電体バリア放電を利用して、良質なラジカルガスを生成する。そして、本実施の形態に係るガス噴射セル部23は、指向性を有するビーム状の高速度のラジカルガスを噴出する。図5は、本実施の形態に係るガス噴射装置100の構成を示す図である。
本実施の形態では、実施の形態1で説明したガス噴射セル部23が、ガス噴射装置100において複数配設されている。
本実施の形態では、図9に示すように、ガス噴射装置100は、同軸状の錐体形状の二つの部材を、ガスの間隙d0が設けられるように配置した、錐体形状のガス噴射セル部23を有する。錐体形状のガス噴射セル部23の頂点部からガスG2を噴出するようにすれば、同等のビーム状のガスを噴出することが出来、良質な成膜を実現することができる。
5 噴出部
9 交流電源
51 ヒータ
61 第一の電極部
610 第一の電極部の給電部
620 第二の電極部の給電部
100 ガス噴射装置
101 ガス供給部
102 噴出孔
200 成膜装置(処理チャンバー)
d0 隙間
G1 (ガス噴射セル部23に供給される)ガス
G2 (ガス噴射セル部23から出力される)ガス
H1 ヒータ電源
P0 (成膜装置200内の)ガス圧力
P1 (ガス噴射装置100内の)ガス圧力
Claims (13)
- ガスの供給を行うガス供給部(101)と、
前記ガス供給部からのガスが供給されるガス分散供給部(99)と、
前記ガス分散供給部内において分散されたガスが流入され、当該ガスを整流化し、整流化されたガスを成膜装置内に噴射するガス噴射セル部(23)とを、備えており、
前記ガス噴射セル部は、
内部にガス通路となる隙間(do)が形成された、扇型形状であり、前記隙間の幅は固定され、前記隙間の幅に直交する方向がガス流れ幅となり、前記隙間の幅は前記ガス流れ幅より狭く、
前記扇型形状は、ガスの流れ方向全体においてガスの流れ方向に従って前記ガス流れ幅が連続的に小さくなる形状であり、
前記ガス分散供給部内のガスは、
前記扇型形状の前記ガス流れ幅の広い側から、前記隙間内に流入し、当該扇型形状に起因して、ガスは整流化および加速され、扇型形状の前記ガス流れ幅の狭い側から、前記成膜装置内に出力される、
ことを特徴とする成膜装置へのガス噴射装置。 - 前記ガス噴射セル部は、
サファイアまたは石英で構成されている、
ことを特徴とする請求項1に記載の成膜装置へのガス噴射装置。 - 前記隙間の幅は、
3mm以下であり、
前記ガス噴射装置部内のガス圧力(P1)は、
10kPa以上、50kPa以下である、
ことを特徴とする請求項1に記載の成膜装置へのガス噴射装置。 - 前記ガス噴射装置は、
ガス流量を調整するバルブ(102B)と前記ガス噴射装置内のガス圧力を一定に制御する圧力制御部(103)とが、接続されている、
ことを特徴とする請求項1に記載の成膜装置へのガス噴射装置。 - 複数の噴出孔(102)を、さらに備えており、
前記ガス噴射セル部から出力されるガスは、
前記複数の噴出孔を介して、前記成膜装置内に出力される、
ことを特徴する請求項1に記載の成膜装置へのガス噴射装置。 - 前記ガス噴射セル部に配設される加熱部(51)を、さらに備えている、
ことを特徴とする請求項1に記載の成膜装置へのガス噴射装置。 - 前記ガス噴射セル部は、
前記隙間を通るガスを、オゾンガス、窒素酸化物ガスもしくは水素化合物ガスとし、前記加熱部による加熱により酸素ラジカル化、窒素ラジカル化もしくは水素ラジカル化し、前記ラジカル化したガスを前記成膜装置へ出力する、
ことを特徴とする請求項6に記載の成膜装置へのガス噴射装置。 - 前記ガス噴射セル部は、
誘電体であり、
前記ガス噴射セル部内の前記隙間の間において、交流電圧を印加させることができる交流電源(9)を、さらに備えており、
前記ガス噴射セル部は、
前記交流電源による交流電圧の印加により、前記隙間において発生した誘電体バリア放電によって生成される、ラジカルガスを前記成膜装置へ出力する、
ことを特徴とする請求項1に記載の成膜装置へのガス噴射装置。 - 前記ガス供給部から供給されるガスは、
窒素ガスもしくは窒素酸化物ガスであり、
前記ガス噴射セル部の前記隙間において、前記誘電体バリア放電により生成される前記ラジカルガスは、
窒素ラジカルである、
ことを特徴とする請求項8に記載の成膜装置へのガス噴射装置。 - 前記ガス供給部から供給されるガスは、
酸素ガスに、数ppm〜数万ppmである、窒素ガスもしくは窒素酸化物ガスを含んだ混合ガスであり、
前記ガス噴射セル部の前記隙間において、前記誘電体バリア放電により生成される前記ラジカルガスは、
酸素ラジカルである、
ことを特徴とする請求項8に記載の成膜装置へのガス噴射装置。 - 前記ガス噴射セル部は、
複数個である、
ことを特徴とする請求項1に記載の成膜装置へのガス噴射装置。 - 前記ガス供給部から供給されたガスは、
プリカーサガスである、
ことを特徴とする請求項1に記載の成膜装置へのガス噴射装置。 - 前記ガス供給部から供給されたガスは、
ラジカルガスの原料となる原料ガスである、
ことを特徴とする請求項1に記載の成膜装置へのガス噴射装置。
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