WO2009028084A1 - 誘電体バリア放電ガスの生成装置 - Google Patents

誘電体バリア放電ガスの生成装置 Download PDF

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Publication number
WO2009028084A1
WO2009028084A1 PCT/JP2007/066990 JP2007066990W WO2009028084A1 WO 2009028084 A1 WO2009028084 A1 WO 2009028084A1 JP 2007066990 W JP2007066990 W JP 2007066990W WO 2009028084 A1 WO2009028084 A1 WO 2009028084A1
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WIPO (PCT)
Prior art keywords
electrode
gas
dielectric barrier
barrier discharge
discharge space
Prior art date
Application number
PCT/JP2007/066990
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English (en)
French (fr)
Inventor
Yoichiro Tabata
Kensuke Watanabe
Original Assignee
Toshiba Mitsubishi-Electric Industrial Systems Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Mitsubishi-Electric Industrial Systems Corporation filed Critical Toshiba Mitsubishi-Electric Industrial Systems Corporation
Priority to KR1020107003643A priority Critical patent/KR101174202B1/ko
Priority to DE112007003640T priority patent/DE112007003640B4/de
Priority to US12/668,886 priority patent/US8857371B2/en
Priority to JP2009529933A priority patent/JP5158084B2/ja
Priority to PCT/JP2007/066990 priority patent/WO2009028084A1/ja
Priority to CN200780100341.4A priority patent/CN101765902B/zh
Publication of WO2009028084A1 publication Critical patent/WO2009028084A1/ja

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/503—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using dc or ac discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32348—Dielectric barrier discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

　高エネルギーのラジカルガスを高密度、且つ高効率で取り出して、被処理物質に供給することができる誘電体バリア放電ガスの生成装置を提供する。このため、平板状の第１電極と第２電極とを対向位置に配置し、両電極間に誘電体を配置する。また、第１電極及び誘電体の間に放電空間部を設け、第１電極及び誘電体の間隙内に、三方がガスシールドされて残りの一方が第１電極及び誘電体の各端面側に開口する放電空間部を形成する。更に、少なくとも第１電極を冷却する冷却部と、上記放電空間部に原料ガスを供給するガス供給部とを備える。そして、第１電極及び第２電極に交流電圧を印加して、放電空間部に誘電体バリア放電を発生させる。
PCT/JP2007/066990 2007-08-31 2007-08-31 誘電体バリア放電ガスの生成装置 WO2009028084A1 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1020107003643A KR101174202B1 (ko) 2007-08-31 2007-08-31 유전체 배리어 방전 가스의 생성 장치
DE112007003640T DE112007003640B4 (de) 2007-08-31 2007-08-31 Vorrichtung zur Erzeugung eines Plasmas mittels einer dielektrischen Barrierenentladung
US12/668,886 US8857371B2 (en) 2007-08-31 2007-08-31 Apparatus for generating dielectric barrier discharge gas
JP2009529933A JP5158084B2 (ja) 2007-08-31 2007-08-31 誘電体バリア放電ガスの生成装置
PCT/JP2007/066990 WO2009028084A1 (ja) 2007-08-31 2007-08-31 誘電体バリア放電ガスの生成装置
CN200780100341.4A CN101765902B (zh) 2007-08-31 2007-08-31 介质阻挡放电气体的生成装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/066990 WO2009028084A1 (ja) 2007-08-31 2007-08-31 誘電体バリア放電ガスの生成装置

Publications (1)

Publication Number Publication Date
WO2009028084A1 true WO2009028084A1 (ja) 2009-03-05

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PCT/JP2007/066990 WO2009028084A1 (ja) 2007-08-31 2007-08-31 誘電体バリア放電ガスの生成装置

Country Status (6)

Country Link
US (1) US8857371B2 (ja)
JP (1) JP5158084B2 (ja)
KR (1) KR101174202B1 (ja)
CN (1) CN101765902B (ja)
DE (1) DE112007003640B4 (ja)
WO (1) WO2009028084A1 (ja)

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JP2013004474A (ja) * 2011-06-21 2013-01-07 Toshiba Mitsubishi-Electric Industrial System Corp プラズマ発生装置およびｃｖｄ装置
WO2013035375A1 (ja) * 2011-09-09 2013-03-14 東芝三菱電機産業システム株式会社 プラズマ発生装置およびｃｖｄ装置
WO2013035377A1 (ja) * 2011-09-08 2013-03-14 東芝三菱電機産業システム株式会社 プラズマ発生装置、ｃｖｄ装置およびプラズマ処理粒子生成装置
WO2016013131A1 (ja) * 2014-07-25 2016-01-28 東芝三菱電機産業システム株式会社 ラジカルガス発生システム
US9295966B1 (en) 2011-07-19 2016-03-29 Jacob G. Appelbaum System and method for cleaning hydrocarbon contaminated water and converting lower molecular weight gaseous hydrocarbon mixtures into higher molecular weight highly-branched hydrocarbons using electron beam combined with electron beam-sustained non-thermal plasma discharge
WO2016067380A1 (ja) * 2014-10-29 2016-05-06 東芝三菱電機産業システム株式会社 放電発生器とその電源装置
JP2017155324A (ja) * 2016-02-26 2017-09-07 国立大学法人 大分大学 誘電体バリア放電による金属表層の硬化方法
WO2019138456A1 (ja) * 2018-01-10 2019-07-18 東芝三菱電機産業システム株式会社 活性ガス生成装置
JP2020068055A (ja) * 2018-10-22 2020-04-30 春日電機株式会社 表面改質装置
CN117480870A (zh) * 2021-06-21 2024-01-30 东京毅力科创株式会社 等离子体处理装置和等离子体处理方法

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JP6645921B2 (ja) * 2016-07-07 2020-02-14 キオクシア株式会社 プラズマ処理装置およびプラズマ処理方法
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CN109207965B (zh) * 2017-07-04 2020-11-10 上海稷以科技有限公司 平板电极结构和等离子体沉积设备
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CN102148150A (zh) * 2010-02-09 2011-08-10 中国科学院微电子研究所 一种应用于32nm以下技术节点的常压自由基束流清洗新方法
JP2013004474A (ja) * 2011-06-21 2013-01-07 Toshiba Mitsubishi-Electric Industrial System Corp プラズマ発生装置およびｃｖｄ装置
US10933397B2 (en) 2011-07-19 2021-03-02 Jacob G. Appelbaum System and method for cleaning hyrocarbon contaminated water
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WO2013035375A1 (ja) * 2011-09-09 2013-03-14 東芝三菱電機産業システム株式会社 プラズマ発生装置およびｃｖｄ装置
JPWO2013035375A1 (ja) * 2011-09-09 2015-03-23 東芝三菱電機産業システム株式会社 プラズマ発生装置およびｃｖｄ装置
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KR101913978B1 (ko) 2014-07-25 2018-10-31 도시바 미쓰비시덴키 산교시스템 가부시키가이샤 라디칼 가스 발생 시스템
WO2016067380A1 (ja) * 2014-10-29 2016-05-06 東芝三菱電機産業システム株式会社 放電発生器とその電源装置
JPWO2016067380A1 (ja) * 2014-10-29 2017-04-27 東芝三菱電機産業システム株式会社 放電発生器とその電源装置
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KR101913985B1 (ko) 2014-10-29 2018-10-31 도시바 미쓰비시덴키 산교시스템 가부시키가이샤 라디칼 가스 발생 시스템
US11466366B2 (en) 2014-10-29 2022-10-11 Toshiba Mitsubishi—Electric Industrial Systems Corporation Electric discharge generator and power supply device of electric discharge generator
JP2017155324A (ja) * 2016-02-26 2017-09-07 国立大学法人 大分大学 誘電体バリア放電による金属表層の硬化方法
JPWO2019138456A1 (ja) * 2018-01-10 2020-10-01 東芝三菱電機産業システム株式会社 活性ガス生成装置
WO2019138456A1 (ja) * 2018-01-10 2019-07-18 東芝三菱電機産業システム株式会社 活性ガス生成装置
JP2020068055A (ja) * 2018-10-22 2020-04-30 春日電機株式会社 表面改質装置
CN117480870A (zh) * 2021-06-21 2024-01-30 东京毅力科创株式会社 等离子体处理装置和等离子体处理方法

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DE112007003640T5 (de) 2010-08-12
DE112007003640B4 (de) 2013-01-17
KR20100039887A (ko) 2010-04-16
CN101765902A (zh) 2010-06-30
US20100193129A1 (en) 2010-08-05
KR101174202B1 (ko) 2012-08-14
US8857371B2 (en) 2014-10-14
JPWO2009028084A1 (ja) 2010-11-25
JP5158084B2 (ja) 2013-03-06
CN101765902B (zh) 2011-09-21

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