JP6827287B2 - プラズマ処理装置の運転方法 - Google Patents
プラズマ処理装置の運転方法 Download PDFInfo
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Description
本実施例において供給されるガスのうちウエハ104を処理するために供給される処理用ガスは、NH3,H2,CH2F2,CH3OH等の可燃性ガス、O2とNF3等の支燃性ガス及びこれらの混合ガスが用いられ、さらにHe,Ne,Ar,N2の不活性ガスにより希釈されたこれらの混合ガスでもよい。図示は省略するが本実施例のプラズマ処理装置100において可燃性ガスや支燃性ガスを使用する場合には、安全にこれらのガスを使用してプラズマ処理装置100を運転することができるようにするための設備が配置されている。
次に図3乃至5を用いて、図1に示す実施例の変形例について説明する。図3は、図1に示す実施例の変形例に係るプラズマ処理装置の構成の概略を模式的に示す縦断面図である。
Claims (5)
- 内側が減圧される真空容器と、この真空容器内部に配置され処理対象のウエハが配置されて処理される処理室及びこの処理室上方に配置されその内部に供給された処理用のガスを用いてプラズマが形成されるプラズマ形成室と、前記処理室内側でその下部に配置され前記ウエハが上面に載せられる試料台と、この試料台の上面の上方の前記真空容器内であって前記処理室と前記プラズマ形成室との間に配置され前記プラズマの粒子が前記処理室に導入される複数の貫通孔を備えた誘電体製の板部材と、前記処理室の上方の前記板部材の外周側でこれを囲んで配置され前記ウエハに電磁波を照射して加熱するランプ及び前記処理室の内側に面して前記ランプからの前記電磁波を透過させる部材で構成されたリング状の窓部材とを備えた真空処理装置の運転方法であって、
前記窓部材の電磁波を透過させる部材がこの窓部材の下面及び前記板部材を囲む側面を構成するものであって、
前記貫通孔から前記試料台上に載せられた前記ウエハに前記処理用のガスを用いて前記プラズマ形成室内に形成されたプラズマの粒子を供給して前記ウエハの表面に反応生成物を形成する工程の後に、前記プラズマ形成室内でのプラズマを消火し前記電磁波により前記ウエハを加熱して前記反応生成物を脱離させる工程を実施した後、前記プラズマ形成室にクリーニング用のガスを供給して前記プラズマ形成室内に形成したプラズマの粒子を当該プラズマ形成室及び前記処理室並びに前記窓部材に供給する工程を実施する真空処理装置の運転方法。
- 請求項1に記載の真空処理装置の運転方法であって、
前記ウエハの表面に反応生成物を形成する工程と前記反応生成物を脱離させる工程とが交互に複数回繰り返される真空処理装置の運転方法。
- 内側が減圧される真空容器と、この真空容器内部に配置され処理対象のウエハが配置されて処理される処理室及びこの処理室上方に配置されその内部に供給された処理用のガスを用いてプラズマが形成されるプラズマ形成室と、前記処理室内側でその下部に配置され前記ウエハが上面に載せられる試料台と、この試料台の上面の上方の前記真空容器内であって前記処理室と前記プラズマ形成室との間に配置され前記プラズマの粒子を前記処理室に導入される複数の貫通孔を備えた誘電体製の板部材と、前記処理室の上方の前記板部材の外周側でこれを囲んで配置され前記ウエハに電磁波を照射して加熱するランプ及び前記処理室の内側に面して前記ランプからの前記電磁波を透過させる部材で構成されたリング状の窓部材とを備えた真空処理装置の運転方法であって、
前記窓部材の電磁波を透過させる部材がこの窓部材の下面及び前記板部材を囲む側面を構成するものであって、
前記貫通孔から前記試料台上に載せられた前記ウエハに前記処理用のガスを用いて前記プラズマ形成室内に形成されたプラズマの粒子を供給して前記ウエハの表面に反応生成物を形成する工程の後に、前記プラズマ形成室内でのプラズマを消失させた状態で前記処理室に面した前記窓部材の表面に沿って希ガスを供給しつつ前記電磁波により前記ウエハを加熱して前記反応生成物を脱離させる工程を実施する真空処理装置の運転方法。
- 請求項3に記載の真空処理装置の運転方法であって、
前記ウエハを加熱して前記反応生成物を脱離させる工程中にリング状の前記窓部材の外周側から前記処理室の中央側に向けて前記希ガスが供給される真空処理装置の運転方法。
- 請求項4に記載の真空処理装置の運転方法であって、
前記ウエハの表面に反応生成物を形成する工程及び前記ウエハを加熱して前記反応生成物を脱離させる工程が交互に複数回繰り返される真空処理装置の運転方法。
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JP2016188983A JP6827287B2 (ja) | 2016-09-28 | 2016-09-28 | プラズマ処理装置の運転方法 |
KR1020170036804A KR101948592B1 (ko) | 2016-09-28 | 2017-03-23 | 플라스마 처리 장치의 운전 방법 |
TW106109747A TWI660423B (zh) | 2016-09-28 | 2017-03-23 | Operation method of plasma processing device |
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JP6820717B2 (ja) | 2016-10-28 | 2021-01-27 | 株式会社日立ハイテク | プラズマ処理装置 |
KR102563925B1 (ko) * | 2018-08-31 | 2023-08-04 | 삼성전자 주식회사 | 반도체 제조 장치 |
JP7154105B2 (ja) * | 2018-10-25 | 2022-10-17 | 東京エレクトロン株式会社 | クリーニング方法及びプラズマ処理装置 |
US11276579B2 (en) * | 2018-11-14 | 2022-03-15 | Hitachi High-Tech Corporation | Substrate processing method and plasma processing apparatus |
WO2020110192A1 (ja) * | 2018-11-27 | 2020-06-04 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置及びそれを用いた試料の処理方法 |
JP7169866B2 (ja) * | 2018-12-14 | 2022-11-11 | 東京エレクトロン株式会社 | 基板処理方法 |
JP7153574B2 (ja) * | 2019-01-17 | 2022-10-14 | 東京エレクトロン株式会社 | 上部電極構造、プラズマ処理装置、及び上部電極構造を組み立てる方法 |
JPWO2020157954A1 (ja) * | 2019-02-01 | 2021-02-18 | 株式会社日立ハイテク | エッチング方法およびプラズマ処理装置 |
KR20210029485A (ko) | 2019-09-06 | 2021-03-16 | 삼성전자주식회사 | 솔더 범프 제조 장치 및 솔더 범프 형성 방법 |
JP7262375B2 (ja) | 2019-11-26 | 2023-04-21 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
JP7452992B2 (ja) * | 2019-12-13 | 2024-03-19 | 株式会社日立ハイテク | プラズマ処理装置およびプラズマ処理装置の運転方法 |
CN113287190B (zh) * | 2019-12-20 | 2023-12-22 | 株式会社日立高新技术 | 等离子处理装置以及晶片处理方法 |
CN112151364B (zh) | 2020-09-27 | 2024-06-21 | 北京北方华创微电子装备有限公司 | 半导体反应腔室 |
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US20240215145A1 (en) * | 2022-12-27 | 2024-06-27 | Plasma Ion Assist Co., Ltd. | Inductive coupling antenna unit and plasma treatment apparatus |
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JPS62206823A (ja) * | 1986-03-07 | 1987-09-11 | Ulvac Corp | 光励起プロセス装置 |
JP2000012526A (ja) * | 1998-06-25 | 2000-01-14 | Mitsubishi Electric Corp | プラズマ処理装置およびプラズマ処理方法 |
JP2000091247A (ja) * | 1998-09-14 | 2000-03-31 | Tokyo Electron Ltd | プラズマ処理装置 |
JP2003163202A (ja) * | 2001-11-27 | 2003-06-06 | Mitsubishi Electric Corp | 半導体製造装置 |
US20050230350A1 (en) | 2004-02-26 | 2005-10-20 | Applied Materials, Inc. | In-situ dry clean chamber for front end of line fabrication |
JP6034548B2 (ja) * | 2009-12-01 | 2016-11-30 | 株式会社アルバック | 有機膜形成装置及び有機膜形成方法 |
WO2011108346A1 (en) * | 2010-03-05 | 2011-09-09 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of oxide semiconductor film and manufacturing method of transistor |
JP2015185594A (ja) * | 2014-03-20 | 2015-10-22 | 株式会社日立ハイテクノロジーズ | エッチング装置 |
JP2016058590A (ja) * | 2014-09-11 | 2016-04-21 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法 |
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KR20180035109A (ko) | 2018-04-05 |
US10141207B2 (en) | 2018-11-27 |
TW201824385A (zh) | 2018-07-01 |
TWI660423B (zh) | 2019-05-21 |
US20180090345A1 (en) | 2018-03-29 |
JP2018056248A (ja) | 2018-04-05 |
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