JP7169866B2 - 基板処理方法 - Google Patents
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- 239000000758 substrate Substances 0.000 title claims description 102
- 238000003672 processing method Methods 0.000 title claims description 18
- 239000010410 layer Substances 0.000 claims description 105
- 238000000034 method Methods 0.000 claims description 53
- 238000010438 heat treatment Methods 0.000 claims description 30
- 238000005530 etching Methods 0.000 claims description 18
- 239000002344 surface layer Substances 0.000 claims description 9
- 229910017701 NHxFy Inorganic materials 0.000 claims description 7
- 239000007789 gas Substances 0.000 description 46
- 230000015572 biosynthetic process Effects 0.000 description 30
- 238000010586 diagram Methods 0.000 description 24
- 229910004298 SiO 2 Inorganic materials 0.000 description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 238000001179 sorption measurement Methods 0.000 description 7
- 238000003860 storage Methods 0.000 description 7
- 238000003795 desorption Methods 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910052681 coesite Inorganic materials 0.000 description 5
- 229910052906 cristobalite Inorganic materials 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 229910052682 stishovite Inorganic materials 0.000 description 5
- 229910052905 tridymite Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000000859 sublimation Methods 0.000 description 4
- 230000008022 sublimation Effects 0.000 description 4
- 238000009832 plasma treatment Methods 0.000 description 3
- 229910017855 NH 4 F Inorganic materials 0.000 description 2
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000015654 memory Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000007723 transport mechanism Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910004014 SiF4 Inorganic materials 0.000 description 1
- -1 ammonium fluorosilicate Chemical compound 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- Drying Of Semiconductors (AREA)
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Description
本実施形態に係る基板処理に使用する装置の一例を説明する。以下では、プラズマ処理装置と加熱装置によって本実施形態に係る基板処理する場合を例に説明する。
100 プラズマ処理装置
200 加熱装置
P パターン
W ウエハ
Claims (12)
- 表層にSi含有膜によるパターンが形成された基板を提供する工程と、
前記基板を加熱する工程と、
前記パターンの変化が所定の変化量となるように、前記加熱時の温度よりも低く前記基板の温度を設定する工程と、
前記温度に応じた厚みの反応層を前記基板の表層にプラズマにより形成する工程と、
前記基板にエネルギーを与えて前記反応層を除去する工程と、
を有する基板処理方法。 - 前記設定する工程、前記形成する工程および前記除去する工程を順に複数サイクル繰り返す
請求項1に記載の基板処理方法。 - 複数サイクルのうち、一部のサイクルの前記設定する工程で前記基板の温度の設定を変更する
請求項2に記載の基板処理方法。 - 前記基板は、粗密にパターンが形成され、
前記設定する工程は、前記基板の温度の設定を制御することで、密に形成されたパターンと粗く形成されたパターンのパターン幅を制御する
請求項1~3の何れか1つに記載の基板処理方法。 - 前記基板は、Si含有膜にパターンが形成され、
前記設定する工程は、100℃以下の前記パターンの変化が所定の変化量となる温度に前記基板の温度を設定し、
前記基板の表層に反応層として、(NH4)2SiF6を形成し、
前記基板を100℃よりも高い温度に加熱して前記反応層を除去する
請求項1~4の何れか1つに記載の基板処理方法。 - 前記設定する工程は、所定の変化量と反応層が形成される温度の相関関係を反映するデータに基づき、前記パターンの変化が所定の変化量となるように前記基板の温度を設定する
請求項1~5の何れか1つに記載の基板処理方法。 - 表層にSi含有膜によるパターンが粗密に形成された基板を提供する工程と、
密に形成されたパターンよりも粗く形成されたパターンのエッチング量を多くする場合、100℃以下の範囲で前記基板の温度を低く設定する工程と、
前記設定した温度の前記基板の表層に反応層として、(NH 4 ) 2 SiF 6 を形成する工程と、
前記基板を100℃よりも高い温度に加熱して前記反応層を除去する工程と、
を有する基板処理方法。 - 前記設定する工程において、10℃から100℃の範囲で前記基板の温度を設定する
請求項7に記載の基板処理方法。 - 前記基板は前記パターンを提供するためのマスクを含み、前記反応層は前記マスク上に形成され、
前記反応層の形成する工程及び前記反応層の除去する工程は少なくとも一つの減少した寸法を有するマスクの一部を維持しながら前記マスクの少なくとも一つの寸法を減少させ、
前記マスクはエッチングターゲット層上にあり、前記方法は少なくとも一つの減少した寸法を有する前記マスクの一部を介して前記エッチングターゲット層をエッチングする工程をさらに含む、
請求項1に記載の基板処理方法。 - NF 3 とNH 3 を用いてNHxFyを生成する工程及び前記マスクをNHxFyに露出させて前記反応層を形成する工程を含む、
請求項9に記載の基板処理方法。 - 前記反応層は、100℃以下で形成される、
請求項10に記載の基板処理方法。 - NF 3 とNH 3 を用いてNHxFyを生成する工程及び前記基板をNHxFyに露出させて前記反応層を形成する工程を含む、
請求項1に記載の基板処理方法。
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JP2018234699A JP7169866B2 (ja) | 2018-12-14 | 2018-12-14 | 基板処理方法 |
TW108144433A TWI818125B (zh) | 2018-12-14 | 2019-12-05 | 基板處理方法 |
CN201911249113.4A CN111326414A (zh) | 2018-12-14 | 2019-12-09 | 基板处理方法 |
KR1020190165735A KR20200074032A (ko) | 2018-12-14 | 2019-12-12 | 기판 처리 방법 |
US16/714,218 US11264236B2 (en) | 2018-12-14 | 2019-12-13 | Substrate processing method |
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JP2009267111A (ja) | 2008-04-25 | 2009-11-12 | Tokyo Electron Ltd | 半導体デバイスの製造方法、製造装置、コンピュータプログラム、及びコンピュータ可読記憶媒体 |
JP2013093512A (ja) | 2011-10-27 | 2013-05-16 | Elpida Memory Inc | 半導体装置の製造方法 |
JP2016058590A (ja) | 2014-09-11 | 2016-04-21 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法 |
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KR100382725B1 (ko) * | 2000-11-24 | 2003-05-09 | 삼성전자주식회사 | 클러스터화된 플라즈마 장치에서의 반도체소자의 제조방법 |
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