JP2009193988A - プラズマエッチング方法及びコンピュータ記憶媒体 - Google Patents
プラズマエッチング方法及びコンピュータ記憶媒体 Download PDFInfo
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- JP2009193988A JP2009193988A JP2008030078A JP2008030078A JP2009193988A JP 2009193988 A JP2009193988 A JP 2009193988A JP 2008030078 A JP2008030078 A JP 2008030078A JP 2008030078 A JP2008030078 A JP 2008030078A JP 2009193988 A JP2009193988 A JP 2009193988A
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- gas
- plasma etching
- etching method
- plasma
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- 238000001020 plasma etching Methods 0.000 title claims abstract description 52
- 238000000034 method Methods 0.000 title claims abstract description 40
- 238000003860 storage Methods 0.000 title claims abstract description 11
- 238000012545 processing Methods 0.000 claims abstract description 42
- 238000005530 etching Methods 0.000 claims abstract description 35
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 17
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 17
- 239000007789 gas Substances 0.000 description 80
- 239000004065 semiconductor Substances 0.000 description 19
- 230000000052 comparative effect Effects 0.000 description 9
- 238000005259 measurement Methods 0.000 description 7
- 239000003507 refrigerant Substances 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
Abstract
【解決手段】被処理基板上に形成されたSiN層104又は酸化シリコン層を、ArFフォトレジスト層102をマスクとして処理ガスのプラズマによりエッチングするプラズマエッチング方法であって、処理ガスは、少なくともCF3Iガスを含み、被処理基板を載置する下部電極に13.56MHz以下の周波数を有する高周波電力を印加する。
【選択図】図1
Description
(バイアス用電力=500W)
1/1の密パターン部
エッチングレート=115nm/min
選択比=1.92
1/10の疎パターン部
エッチングレート=89nm/min
選択比=1.39
(バイアス用電力=1000W)
1/1の密パターン部
エッチングレート=200nm/min
選択比=1.82
1/10の疎パターン部
エッチングレート=175nm/min
選択比=1.75
Claims (5)
- 被処理基板上に形成された被エッチング層を、ArFフォトレジストをマスクとして処理ガスのプラズマによりエッチングするプラズマエッチング方法であって、
前記被エッチング層は、窒化シリコン層又は酸化シリコン層のいずれかであり、
前記処理ガスは、少なくともCF3Iガスを含み、
前記被処理基板を載置する下部電極に、13.56MHz以下の周波数を有する高周波電力を印加する
ことを特徴とするプラズマエッチング方法。 - 請求項1記載のプラズマエッチング方法であって、
前記下部電極に印加される13.56MHz以下の周波数を有する高周波電力は、500W以上であることを特徴とするプラズマエッチング方法。 - 請求項1又は2記載のプラズマエッチング方法であって、
前記被エッチング層には、ラインとスペースとで形成されたエッチングパターンが存在し、ラインの幅とスペースの幅の比(ラインの幅/スペースの幅)が、1/1の密パターンと、1/10以下の疎パターンが混在することを特徴とするプラズマエッチング方法。 - 請求項1〜3いずれか1項記載のプラズマエッチング方法であって、
前記下部電極には、前記13.56MHz以下の周波数を有する高周波電力とともに、27MHz以上の周波数を有する第2の高周波電力が印加されることを特徴とするプラズマエッチング方法。 - コンピュータ上で動作する制御プログラムが記憶されたコンピュータ記憶媒体であって、
前記制御プログラムは、実行時に請求項1から請求項4いずれか1項記載のプラズマエッチング方法が行われるようにプラズマエッチング装置を制御することを特徴とするコンピュータ記憶媒体。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008030078A JP2009193988A (ja) | 2008-02-12 | 2008-02-12 | プラズマエッチング方法及びコンピュータ記憶媒体 |
KR1020090011185A KR101061621B1 (ko) | 2008-02-12 | 2009-02-11 | 플라즈마 에칭 방법 및 컴퓨터 기억 매체 |
US12/369,199 US20090203218A1 (en) | 2008-02-12 | 2009-02-11 | Plasma etching method and computer-readable storage medium |
TW098104341A TW200952064A (en) | 2008-02-12 | 2009-02-11 | Plasma etching method and computer-readable storage medium |
CN2011101910424A CN102254813A (zh) | 2008-02-12 | 2009-02-12 | 等离子体蚀刻方法 |
CN2009100089300A CN101692423B (zh) | 2008-02-12 | 2009-02-12 | 等离子体蚀刻方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008030078A JP2009193988A (ja) | 2008-02-12 | 2008-02-12 | プラズマエッチング方法及びコンピュータ記憶媒体 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2009193988A true JP2009193988A (ja) | 2009-08-27 |
Family
ID=40939250
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008030078A Ceased JP2009193988A (ja) | 2008-02-12 | 2008-02-12 | プラズマエッチング方法及びコンピュータ記憶媒体 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20090203218A1 (ja) |
JP (1) | JP2009193988A (ja) |
KR (1) | KR101061621B1 (ja) |
CN (2) | CN102254813A (ja) |
TW (1) | TW200952064A (ja) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5606060B2 (ja) * | 2009-12-24 | 2014-10-15 | 東京エレクトロン株式会社 | エッチング方法及びエッチング処理装置 |
US10297459B2 (en) | 2013-09-20 | 2019-05-21 | Lam Research Corporation | Technique to deposit sidewall passivation for high aspect ratio cylinder etch |
US9837254B2 (en) | 2014-08-12 | 2017-12-05 | Lam Research Corporation | Differentially pumped reactive gas injector |
US9406535B2 (en) | 2014-08-29 | 2016-08-02 | Lam Research Corporation | Ion injector and lens system for ion beam milling |
US10825652B2 (en) | 2014-08-29 | 2020-11-03 | Lam Research Corporation | Ion beam etch without need for wafer tilt or rotation |
US9536748B2 (en) | 2014-10-21 | 2017-01-03 | Lam Research Corporation | Use of ion beam etching to generate gate-all-around structure |
US9887097B2 (en) | 2014-12-04 | 2018-02-06 | Lam Research Corporation | Technique to deposit sidewall passivation for high aspect ratio cylinder etch |
US10170324B2 (en) | 2014-12-04 | 2019-01-01 | Lam Research Corporation | Technique to tune sidewall passivation deposition conformality for high aspect ratio cylinder etch |
US9384998B2 (en) | 2014-12-04 | 2016-07-05 | Lam Research Corporation | Technique to deposit sidewall passivation for high aspect ratio cylinder etch |
US9620377B2 (en) | 2014-12-04 | 2017-04-11 | Lab Research Corporation | Technique to deposit metal-containing sidewall passivation for high aspect ratio cylinder etch |
US9543148B1 (en) | 2015-09-01 | 2017-01-10 | Lam Research Corporation | Mask shrink layer for high aspect ratio dielectric etch |
US9779955B2 (en) | 2016-02-25 | 2017-10-03 | Lam Research Corporation | Ion beam etching utilizing cryogenic wafer temperatures |
US10276398B2 (en) | 2017-08-02 | 2019-04-30 | Lam Research Corporation | High aspect ratio selective lateral etch using cyclic passivation and etching |
US10847374B2 (en) | 2017-10-31 | 2020-11-24 | Lam Research Corporation | Method for etching features in a stack |
US10658174B2 (en) | 2017-11-21 | 2020-05-19 | Lam Research Corporation | Atomic layer deposition and etch for reducing roughness |
US10361092B1 (en) | 2018-02-23 | 2019-07-23 | Lam Research Corporation | Etching features using metal passivation |
JP7169866B2 (ja) * | 2018-12-14 | 2022-11-11 | 東京エレクトロン株式会社 | 基板処理方法 |
WO2020176640A1 (en) | 2019-02-28 | 2020-09-03 | Lam Research Corporation | Ion beam etching with sidewall cleaning |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005129893A (ja) * | 2003-09-29 | 2005-05-19 | Tokyo Electron Ltd | エッチング方法 |
JP2006032568A (ja) * | 2004-07-14 | 2006-02-02 | Nec Electronics Corp | ドライエッチング方法および半導体装置の製造方法 |
JP2006108484A (ja) * | 2004-10-07 | 2006-04-20 | Ulvac Japan Ltd | 層間絶縁膜のドライエッチング方法 |
JP2007180358A (ja) * | 2005-12-28 | 2007-07-12 | Tokyo Electron Ltd | プラズマエッチング方法およびコンピュータ読み取り可能な記憶媒体 |
JP2007214299A (ja) * | 2006-02-09 | 2007-08-23 | Tokyo Electron Ltd | エッチング方法 |
JP2007294842A (ja) * | 2006-03-28 | 2007-11-08 | Tokyo Electron Ltd | プラズマエッチング方法 |
WO2007135906A1 (ja) * | 2006-05-24 | 2007-11-29 | Ulvac, Inc. | 層間絶縁膜のドライエッチング方法 |
JP2008016585A (ja) * | 2006-07-05 | 2008-01-24 | Kawasaki Microelectronics Kk | エッチング装置およびエッチング方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US66247A (en) * | 1867-07-02 | The nor | ||
US37701A (en) * | 1863-02-17 | Improvement in lateral waste-valves for pumps | ||
US126668A (en) * | 1872-05-14 | Improvement in gauges for splitting leather | ||
US70111A (en) * | 1867-10-22 | E z b a peck | ||
US37703A (en) * | 1863-02-17 | Improvement in heading-tools for screws | ||
US6123862A (en) * | 1998-04-24 | 2000-09-26 | Micron Technology, Inc. | Method of forming high aspect ratio apertures |
US6921725B2 (en) * | 2001-06-28 | 2005-07-26 | Micron Technology, Inc. | Etching of high aspect ratio structures |
JP2003086569A (ja) * | 2001-09-12 | 2003-03-20 | Tokyo Electron Ltd | プラズマ処理方法 |
US7473377B2 (en) * | 2002-06-27 | 2009-01-06 | Tokyo Electron Limited | Plasma processing method |
US20040087153A1 (en) * | 2002-10-31 | 2004-05-06 | Yan Du | Method of etching a silicon-containing dielectric material |
CN1983518B (zh) * | 2004-06-21 | 2011-06-08 | 东京毅力科创株式会社 | 等离子体处理装置和方法 |
US7465670B2 (en) * | 2005-03-28 | 2008-12-16 | Tokyo Electron Limited | Plasma etching method, plasma etching apparatus, control program and computer storage medium with enhanced selectivity |
US20090191715A1 (en) * | 2006-03-09 | 2009-07-30 | Toshio Hayashi | Method for etching interlayer dielectric film |
WO2007105261A1 (ja) * | 2006-03-09 | 2007-09-20 | Philtech Inc. | 層間絶縁膜のドライエッチング方法 |
-
2008
- 2008-02-12 JP JP2008030078A patent/JP2009193988A/ja not_active Ceased
-
2009
- 2009-02-11 US US12/369,199 patent/US20090203218A1/en not_active Abandoned
- 2009-02-11 KR KR1020090011185A patent/KR101061621B1/ko not_active IP Right Cessation
- 2009-02-11 TW TW098104341A patent/TW200952064A/zh unknown
- 2009-02-12 CN CN2011101910424A patent/CN102254813A/zh active Pending
- 2009-02-12 CN CN2009100089300A patent/CN101692423B/zh not_active Expired - Fee Related
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005129893A (ja) * | 2003-09-29 | 2005-05-19 | Tokyo Electron Ltd | エッチング方法 |
JP2006032568A (ja) * | 2004-07-14 | 2006-02-02 | Nec Electronics Corp | ドライエッチング方法および半導体装置の製造方法 |
JP2006108484A (ja) * | 2004-10-07 | 2006-04-20 | Ulvac Japan Ltd | 層間絶縁膜のドライエッチング方法 |
JP2007180358A (ja) * | 2005-12-28 | 2007-07-12 | Tokyo Electron Ltd | プラズマエッチング方法およびコンピュータ読み取り可能な記憶媒体 |
JP2007214299A (ja) * | 2006-02-09 | 2007-08-23 | Tokyo Electron Ltd | エッチング方法 |
JP2007294842A (ja) * | 2006-03-28 | 2007-11-08 | Tokyo Electron Ltd | プラズマエッチング方法 |
WO2007135906A1 (ja) * | 2006-05-24 | 2007-11-29 | Ulvac, Inc. | 層間絶縁膜のドライエッチング方法 |
JP2008016585A (ja) * | 2006-07-05 | 2008-01-24 | Kawasaki Microelectronics Kk | エッチング装置およびエッチング方法 |
Also Published As
Publication number | Publication date |
---|---|
CN101692423B (zh) | 2011-08-31 |
CN102254813A (zh) | 2011-11-23 |
KR101061621B1 (ko) | 2011-09-01 |
CN101692423A (zh) | 2010-04-07 |
KR20090087423A (ko) | 2009-08-17 |
TW200952064A (en) | 2009-12-16 |
US20090203218A1 (en) | 2009-08-13 |
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