DE69629885D1 - Magnetfeldgenerator für Magnetronplasma - Google Patents

Magnetfeldgenerator für Magnetronplasma

Info

Publication number
DE69629885D1
DE69629885D1 DE69629885T DE69629885T DE69629885D1 DE 69629885 D1 DE69629885 D1 DE 69629885D1 DE 69629885 T DE69629885 T DE 69629885T DE 69629885 T DE69629885 T DE 69629885T DE 69629885 D1 DE69629885 D1 DE 69629885D1
Authority
DE
Germany
Prior art keywords
magnetic field
field generator
magnetron plasma
magnetron
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69629885T
Other languages
English (en)
Other versions
DE69629885T2 (de
Inventor
Koji Miyata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Chemical Co Ltd
Tokyo Electron Ltd
Original Assignee
Shin Etsu Chemical Co Ltd
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP7175898A external-priority patent/JPH0927278A/ja
Priority claimed from JP17588995A external-priority patent/JP3272202B2/ja
Application filed by Shin Etsu Chemical Co Ltd, Tokyo Electron Ltd filed Critical Shin Etsu Chemical Co Ltd
Publication of DE69629885D1 publication Critical patent/DE69629885D1/de
Application granted granted Critical
Publication of DE69629885T2 publication Critical patent/DE69629885T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
DE69629885T 1995-07-12 1996-07-01 Magnetfeldgenerator für Magnetronplasma Expired - Lifetime DE69629885T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP7175898A JPH0927278A (ja) 1995-07-12 1995-07-12 マグネトロンプラズマ用磁場発生装置
JP17588995 1995-07-12
JP17588995A JP3272202B2 (ja) 1995-07-12 1995-07-12 マグネトロンプラズマ用磁場発生装置
JP17589895 1995-07-12

Publications (2)

Publication Number Publication Date
DE69629885D1 true DE69629885D1 (de) 2003-10-16
DE69629885T2 DE69629885T2 (de) 2005-03-10

Family

ID=26497001

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69629885T Expired - Lifetime DE69629885T2 (de) 1995-07-12 1996-07-01 Magnetfeldgenerator für Magnetronplasma

Country Status (3)

Country Link
US (1) US5659276A (de)
EP (1) EP0762471B1 (de)
DE (1) DE69629885T2 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0152242B1 (ko) * 1995-01-16 1998-12-01 박주탁 다중 음극 전자빔 플라즈마 식각장치
US6224724B1 (en) 1995-02-23 2001-05-01 Tokyo Electron Limited Physical vapor processing of a surface with non-uniformity compensation
US6014943A (en) * 1996-09-12 2000-01-18 Tokyo Electron Limited Plasma process device
TW418461B (en) * 1997-03-07 2001-01-11 Tokyo Electron Ltd Plasma etching device
JP3375302B2 (ja) 1998-07-29 2003-02-10 東京エレクトロン株式会社 マグネトロンプラズマ処理装置および処理方法
US6371045B1 (en) * 1999-07-26 2002-04-16 United Microelectronics Corp. Physical vapor deposition device for forming a metallic layer on a semiconductor wafer
JP3892996B2 (ja) * 1999-09-02 2007-03-14 東京エレクトロン株式会社 マグネトロンプラズマ処理装置
US8114245B2 (en) * 1999-11-26 2012-02-14 Tadahiro Ohmi Plasma etching device
WO2001063643A1 (de) 2000-02-23 2001-08-30 Unaxis Balzers Aktiengesellschaft Verfahren zur steuerung der plasmadichte oder deren verteilung
US8048806B2 (en) 2000-03-17 2011-11-01 Applied Materials, Inc. Methods to avoid unstable plasma states during a process transition
US8617351B2 (en) 2002-07-09 2013-12-31 Applied Materials, Inc. Plasma reactor with minimal D.C. coils for cusp, solenoid and mirror fields for plasma uniformity and device damage reduction
CN100568461C (zh) 2000-09-01 2009-12-09 信越化学工业株式会社 产生磁等离子体的磁场发生装置
KR100403616B1 (ko) * 2001-01-03 2003-10-30 삼성전자주식회사 플라즈마 장치에 의한 플라즈마 처리 공정의 시뮬레이션방법
US7374636B2 (en) * 2001-07-06 2008-05-20 Applied Materials, Inc. Method and apparatus for providing uniform plasma in a magnetic field enhanced plasma reactor
JP4009087B2 (ja) * 2001-07-06 2007-11-14 アプライド マテリアルズ インコーポレイテッド 半導体製造装置における磁気発生装置、半導体製造装置および磁場強度制御方法
JP2003234331A (ja) * 2001-12-05 2003-08-22 Tokyo Electron Ltd プラズマエッチング方法およびプラズマエッチング装置
TWI283899B (en) 2002-07-09 2007-07-11 Applied Materials Inc Capacitively coupled plasma reactor with magnetic plasma control
US7458335B1 (en) 2002-10-10 2008-12-02 Applied Materials, Inc. Uniform magnetically enhanced reactive ion etching using nested electromagnetic coils
EP1552544B1 (de) * 2002-10-15 2011-12-21 Oerlikon Trading AG, Trübbach Verfahren zur Herstellung magnetron-sputterbeschichteter Substrate und Anlage hierfür
US7422654B2 (en) * 2003-02-14 2008-09-09 Applied Materials, Inc. Method and apparatus for shaping a magnetic field in a magnetic field-enhanced plasma reactor
FR2895208B1 (fr) * 2005-12-16 2008-06-27 Metal Process Sarl Procede de production de plasma par decharge capacitive associe a un plasma annexe a decharge distribuee, et systeme de mise en oeuvre associe
US20120312233A1 (en) * 2011-06-10 2012-12-13 Ge Yi Magnetically Enhanced Thin Film Coating Method and Apparatus

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3619194A1 (de) * 1986-06-06 1987-12-10 Leybold Heraeus Gmbh & Co Kg Magnetron-zerstaeubungskatode fuer vakuum-beschichtungsanlagen
DE4102102C2 (de) * 1991-01-25 1995-09-07 Leybold Ag Magnetanordnung mit wenigstens zwei Permanentmagneten sowie ihre Verwendung
DE4125110C2 (de) * 1991-07-30 1999-09-09 Leybold Ag Magnetron-Zerstäubungskathode für Vakuumbeschichtungsanlagen
US5248402A (en) * 1992-07-29 1993-09-28 Cvc Products, Inc. Apple-shaped magnetron for sputtering system
JP2899190B2 (ja) * 1993-01-08 1999-06-02 信越化学工業株式会社 マグネトロンプラズマ用永久磁石磁気回路
JP2952147B2 (ja) * 1993-12-14 1999-09-20 信越化学工業株式会社 マグネトロンプラズマ用磁場発生装置
DE69403768T2 (de) * 1993-12-28 1997-11-13 Shinetsu Chemical Co Dipolringmagnet für Magnetronzerstäubung oder Magnetronätzung

Also Published As

Publication number Publication date
DE69629885T2 (de) 2005-03-10
EP0762471A1 (de) 1997-03-12
EP0762471B1 (de) 2003-09-10
US5659276A (en) 1997-08-19

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Legal Events

Date Code Title Description
8332 No legal effect for de
8370 Indication of lapse of patent is to be deleted
8364 No opposition during term of opposition