DE69520772T2 - Plasmagenerator - Google Patents

Plasmagenerator

Info

Publication number
DE69520772T2
DE69520772T2 DE69520772T DE69520772T DE69520772T2 DE 69520772 T2 DE69520772 T2 DE 69520772T2 DE 69520772 T DE69520772 T DE 69520772T DE 69520772 T DE69520772 T DE 69520772T DE 69520772 T2 DE69520772 T2 DE 69520772T2
Authority
DE
Germany
Prior art keywords
plasma generator
plasma
generator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69520772T
Other languages
English (en)
Other versions
DE69520772D1 (de
Inventor
Pal Dharam Gosain
Uesutootaa Jiyonasan
Setsuo Usui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of DE69520772D1 publication Critical patent/DE69520772D1/de
Publication of DE69520772T2 publication Critical patent/DE69520772T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32871—Means for trapping or directing unwanted particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
DE69520772T 1994-09-28 1995-09-25 Plasmagenerator Expired - Fee Related DE69520772T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23260694A JP3339200B2 (ja) 1994-09-28 1994-09-28 プラズマ発生装置、プラズマ加工方法および薄膜トランジスタの製造方法

Publications (2)

Publication Number Publication Date
DE69520772D1 DE69520772D1 (de) 2001-05-31
DE69520772T2 true DE69520772T2 (de) 2001-10-25

Family

ID=16941992

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69520772T Expired - Fee Related DE69520772T2 (de) 1994-09-28 1995-09-25 Plasmagenerator

Country Status (6)

Country Link
US (1) US5637180A (de)
EP (1) EP0704552B1 (de)
JP (1) JP3339200B2 (de)
KR (1) KR960010157A (de)
DE (1) DE69520772T2 (de)
SG (1) SG52171A1 (de)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3339200B2 (ja) * 1994-09-28 2002-10-28 ソニー株式会社 プラズマ発生装置、プラズマ加工方法および薄膜トランジスタの製造方法
DE19540543A1 (de) * 1995-10-31 1997-05-07 Leybold Ag Vorrichtung zum Beschichten eines Substrats mit Hilfe des Chemical-Vapor-Deposition-Verfahrens
US5735960A (en) 1996-04-02 1998-04-07 Micron Technology, Inc. Apparatus and method to increase gas residence time in a reactor
US6083363A (en) * 1997-07-02 2000-07-04 Tokyo Electron Limited Apparatus and method for uniform, low-damage anisotropic plasma processing
US6135053A (en) * 1997-07-16 2000-10-24 Canon Kabushiki Kaisha Apparatus for forming a deposited film by plasma chemical vapor deposition
US6499425B1 (en) * 1999-01-22 2002-12-31 Micron Technology, Inc. Quasi-remote plasma processing method and apparatus
JP2002083803A (ja) * 2000-09-07 2002-03-22 Yac Co Ltd エッチング装置やアッシング装置といったようなドライプロセッシング装置
US20030092278A1 (en) * 2001-11-13 2003-05-15 Fink Steven T. Plasma baffle assembly
KR100377095B1 (en) * 2002-02-01 2003-03-20 Nexo Co Ltd Semiconductor fabrication apparatus using low energy plasma
US7013834B2 (en) * 2002-04-19 2006-03-21 Nordson Corporation Plasma treatment system
KR101015744B1 (ko) 2002-05-08 2011-02-22 비티유 인터내셔날, 인코포레이티드 플라즈마 촉매
US7432470B2 (en) 2002-05-08 2008-10-07 Btu International, Inc. Surface cleaning and sterilization
GB0211354D0 (en) * 2002-05-17 2002-06-26 Surface Innovations Ltd Atomisation of a precursor into an excitation medium for coating a remote substrate
US7189940B2 (en) * 2002-12-04 2007-03-13 Btu International Inc. Plasma-assisted melting
KR101127294B1 (ko) * 2003-02-14 2012-03-30 어플라이드 머티어리얼스, 인코포레이티드 수소-함유 라디칼을 이용한 자연 산화물 세정
JP2005137781A (ja) * 2003-11-10 2005-06-02 Marcom:Kk プラズマ発生装置
US8298336B2 (en) * 2005-04-01 2012-10-30 Lam Research Corporation High strip rate downstream chamber
US20060236931A1 (en) * 2005-04-25 2006-10-26 Varian Semiconductor Equipment Associates, Inc. Tilted Plasma Doping
US20090029564A1 (en) * 2005-05-31 2009-01-29 Tokyo Electron Limited Plasma treatment apparatus and plasma treatment method
WO2008153674A1 (en) * 2007-06-09 2008-12-18 Boris Kobrin Method and apparatus for anisotropic etching
JP2009016453A (ja) * 2007-07-02 2009-01-22 Tokyo Electron Ltd プラズマ処理装置
US20100270262A1 (en) * 2009-04-22 2010-10-28 Applied Materials, Inc. Etching low-k dielectric or removing resist with a filtered ionized gas
US9177788B2 (en) 2012-03-12 2015-11-03 Veeco Ald Inc. Plasma reactor with conductive member in reaction chamber for shielding substrate from undesirable irradiation
KR101625001B1 (ko) * 2013-05-14 2016-05-27 주식회사 아비즈알 진공증착장치 용 원료가스 분사노즐
KR20140134531A (ko) * 2013-05-14 2014-11-24 주식회사 아비즈알 진공증착장치 용 원료가스 분사노즐
CN104342632B (zh) * 2013-08-07 2017-06-06 北京北方微电子基地设备工艺研究中心有限责任公司 预清洗腔室及等离子体加工设备
WO2015116703A2 (en) * 2014-01-28 2015-08-06 Hzo, Inc. Material processing system with conduits configured to prevent heat transfer between a pyrolysis tube and adjacent elements
JP6681228B2 (ja) * 2016-03-14 2020-04-15 株式会社Ｓｃｒｅｅｎホールディングス エッチング装置及びエッチング方法
US11694911B2 (en) * 2016-12-20 2023-07-04 Lam Research Corporation Systems and methods for metastable activated radical selective strip and etch using dual plenum showerhead
JP6770887B2 (ja) * 2016-12-28 2020-10-21 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理システム
GB201904587D0 (en) 2019-04-02 2019-05-15 Oxford Instruments Nanotechnology Tools Ltd Surface processing apparatus
KR102285856B1 (ko) * 2019-10-10 2021-08-05 한국과학기술연구원 범용 적용이 가능한 수직 배향된 블록공중합체 필름의 제조방법, 이에 의해 배향이 조절된 블록공중합체 필름 및 자기 조립 패턴의 제조방법
JP7404119B2 (ja) * 2020-03-19 2023-12-25 住友重機械工業株式会社 負イオン生成装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3297465A (en) * 1963-12-31 1967-01-10 Ibm Method for producing organic plasma and for depositing polymer films
JPS5969142A (ja) * 1982-10-13 1984-04-19 Toshiba Corp 膜形成方法及び膜形成装置
US4776923A (en) * 1987-01-20 1988-10-11 Machine Technology, Inc. Plasma product treatment apparatus and methods and gas transport systems for use therein
US4836902A (en) * 1987-10-09 1989-06-06 Northern Telecom Limited Method and apparatus for removing coating from substrate
JPH04192520A (ja) * 1990-11-27 1992-07-10 Ramuko Kk プラズマリアクター
JPH05152333A (ja) * 1991-11-26 1993-06-18 Toshiba Corp 液晶表示装置の製造方法
JPH0684837A (ja) * 1992-09-04 1994-03-25 Mitsubishi Electric Corp プラズマ処理装置
JPH06244159A (ja) * 1993-02-18 1994-09-02 Hitachi Ltd 光励起ガス反応装置
JPH0831803A (ja) * 1994-07-18 1996-02-02 Plasma Syst:Kk プラズマ処理装置
JP3339200B2 (ja) * 1994-09-28 2002-10-28 ソニー株式会社 プラズマ発生装置、プラズマ加工方法および薄膜トランジスタの製造方法

Also Published As

Publication number Publication date
JPH0897155A (ja) 1996-04-12
JP3339200B2 (ja) 2002-10-28
KR960010157A (ko) 1996-04-20
EP0704552A1 (de) 1996-04-03
DE69520772D1 (de) 2001-05-31
US5637180A (en) 1997-06-10
SG52171A1 (en) 1998-09-28
EP0704552B1 (de) 2001-04-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee