KR900007925A - 고온 반응 처리 방법 - Google Patents

고온 반응 처리 방법 Download PDF

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Publication number
KR900007925A
KR900007925A KR1019890016914A KR890016914A KR900007925A KR 900007925 A KR900007925 A KR 900007925A KR 1019890016914 A KR1019890016914 A KR 1019890016914A KR 890016914 A KR890016914 A KR 890016914A KR 900007925 A KR900007925 A KR 900007925A
Authority
KR
South Korea
Prior art keywords
high temperature
treatment method
reaction treatment
temperature reaction
lower heating
Prior art date
Application number
KR1019890016914A
Other languages
English (en)
Inventor
미쓰노부 고시바
요시유끼 하리다
유지 후루또
놀란드 브루노
롬바에르쯔 리아
Original Assignee
원본미기재
니혼 고오세이 고무 가부시끼가이샤
유씨비 소시에떼 아노님
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 원본미기재, 니혼 고오세이 고무 가부시끼가이샤, 유씨비 소시에떼 아노님 filed Critical 원본미기재
Publication of KR900007925A publication Critical patent/KR900007925A/ko

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
    • C08J7/12—Chemical modification
    • C08J7/16—Chemical modification with polymerisable compounds
    • C08J7/18—Chemical modification with polymerisable compounds using wave energy or particle radiation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/265—Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking

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  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Toxicology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Other Resins Obtained By Reactions Not Involving Carbon-To-Carbon Unsaturated Bonds (AREA)

Abstract

내용 없음

Description

고온 반응 처리 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 실시에 사용되는 고온 반응 처리 장치의 한 예를 도시한 단면 모식도.
제2도는 제1도 중의 상부 가열용 판의 하면도.
제3도는 본 발명의 실시에 사용되는 고온 반응 처리 장치의 다른 예를 도시한 단면 모식도이다.

Claims (1)

  1. 기판(5)의 상하에 위치하고 상기 기판을 가열하는 상부 가열용 판(2, 102) 및 하부 가열용 판(3, 103)이 내부에 설치된 밀폐 가능한 반응기(1,101)를 사용하고, 반응성 화합물에 의해 기판상의 고분자 막을 처리함에 있어서, 상기 하부 가열용 판(3, 103)의 온도 TL℃에 대해 상기 가열용 판(2, 102)의 온도 TU℃를 (TL-70)℃에서 (TL-30)℃사이로 유지하면서 처리하는 것을 특징으로 하는 고온 반응 처리 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890016914A 1988-11-22 1989-11-21 고온 반응 처리 방법 KR900007925A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP63293633A JPH02151865A (ja) 1988-11-22 1988-11-22 高温反応処理方法
JP63-293633 1988-11-22

Publications (1)

Publication Number Publication Date
KR900007925A true KR900007925A (ko) 1990-06-02

Family

ID=17797238

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890016914A KR900007925A (ko) 1988-11-22 1989-11-21 고온 반응 처리 방법

Country Status (4)

Country Link
US (1) US4957588A (ko)
EP (1) EP0370486A3 (ko)
JP (1) JPH02151865A (ko)
KR (1) KR900007925A (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100280879B1 (ko) * 1998-03-26 2001-05-02 구자홍 플라즈마 표시장치용 유전체 후막의 제조방법 및 램프 가열로

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2951504B2 (ja) * 1992-06-05 1999-09-20 シャープ株式会社 シリル化平坦化レジスト及び平坦化方法並びに集積回路デバイスの製造方法
US5248371A (en) * 1992-08-13 1993-09-28 General Signal Corporation Hollow-anode glow discharge apparatus
US5346601A (en) * 1993-05-11 1994-09-13 Andrew Barada Sputter coating collimator with integral reactive gas distribution
US5550007A (en) * 1993-05-28 1996-08-27 Lucent Technologies Inc. Surface-imaging technique for lithographic processes for device fabrication
WO1997000899A1 (en) * 1995-06-22 1997-01-09 Yuri Gudimenko Surface modification of polymers and carbon-based materials
TW464944B (en) 1997-01-16 2001-11-21 Tokyo Electron Ltd Baking apparatus and baking method
JP5040213B2 (ja) * 2006-08-15 2012-10-03 東京エレクトロン株式会社 熱処理装置、熱処理方法及び記憶媒体

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4615765A (en) * 1985-02-01 1986-10-07 General Electric Company Self-registered, thermal processing technique using a pulsed heat source
US4613398A (en) * 1985-06-06 1986-09-23 International Business Machines Corporation Formation of etch-resistant resists through preferential permeation
US4751170A (en) * 1985-07-26 1988-06-14 Nippon Telegraph And Telephone Corporation Silylation method onto surface of polymer membrane and pattern formation process by the utilization of silylation method
US4657845A (en) * 1986-01-14 1987-04-14 International Business Machines Corporation Positive tone oxygen plasma developable photoresist
US4867838A (en) * 1986-10-27 1989-09-19 International Business Machines Corporation Planarization through silylation
US4768291A (en) * 1987-03-12 1988-09-06 Monarch Technologies Corporation Apparatus for dry processing a semiconductor wafer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100280879B1 (ko) * 1998-03-26 2001-05-02 구자홍 플라즈마 표시장치용 유전체 후막의 제조방법 및 램프 가열로

Also Published As

Publication number Publication date
US4957588A (en) 1990-09-18
EP0370486A3 (en) 1991-09-11
JPH02151865A (ja) 1990-06-11
EP0370486A2 (en) 1990-05-30

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