KR900002404A - 반도체 웨이퍼 - Google Patents

반도체 웨이퍼 Download PDF

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Publication number
KR900002404A
KR900002404A KR1019890004072A KR890004072A KR900002404A KR 900002404 A KR900002404 A KR 900002404A KR 1019890004072 A KR1019890004072 A KR 1019890004072A KR 890004072 A KR890004072 A KR 890004072A KR 900002404 A KR900002404 A KR 900002404A
Authority
KR
South Korea
Prior art keywords
wafer
semiconductor material
semiconductor wafer
atoms
less
Prior art date
Application number
KR1019890004072A
Other languages
English (en)
Inventor
오사무 스즈끼
세이지 구리하라
다까시 아라끼
히도시 구사까
쇼이찌 다까하시
Original Assignee
가스야 기요히고
도시바 세라믹스 가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가스야 기요히고, 도시바 세라믹스 가부시기가이샤 filed Critical 가스야 기요히고
Publication of KR900002404A publication Critical patent/KR900002404A/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/08—Preparation of the foundation plate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

내용 없음

Description

반도체 웨이퍼
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (3)

  1. 반도체재료의 웨이퍼에 있어서, 상기 웨이퍼는 최소한 하나의 표면을 가지며, 상기 표면으로부터 약 10㎛ 까지의 반도체재료는 1x1013원자/㎤ 이하의 금속불순물 농도를 갖는 특징으로 하는 반도체웨이퍼.
  2. 제1항에 있어서, 상기 반도체재료는 주로 실리콘으로 구성되는 웨이퍼.
  3. 제1항에 있어서, 약 700-1250℃의 온도범위에서 열처리중에 상기 웨이퍼에서의 산소농도 감소량은 0.6X1017원자/㎤이하인 것을 특징으로 하는 웨이퍼.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890004072A 1988-07-14 1989-03-30 반도체 웨이퍼 KR900002404A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP63176089A JPH0226031A (ja) 1988-07-14 1988-07-14 シリコンウェーハ
JP63-176089 1988-07-14

Publications (1)

Publication Number Publication Date
KR900002404A true KR900002404A (ko) 1990-02-28

Family

ID=16007517

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890004072A KR900002404A (ko) 1988-07-14 1989-03-30 반도체 웨이퍼

Country Status (3)

Country Link
JP (1) JPH0226031A (ko)
KR (1) KR900002404A (ko)
DE (1) DE3910449A1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020092040A (ko) * 2001-06-01 2002-12-11 송호봉 멤브레인 프레스장치

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0380193A (ja) * 1989-08-23 1991-04-04 Shin Etsu Handotai Co Ltd シリコン半導体単結晶
US5361128A (en) * 1992-09-10 1994-11-01 Hemlock Semiconductor Corporation Method for analyzing irregular shaped chunked silicon for contaminates
US5593494A (en) * 1995-03-14 1997-01-14 Memc Electronic Materials, Inc. Precision controlled precipitation of oxygen in silicon

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4010064A (en) * 1975-05-27 1977-03-01 International Business Machines Corporation Controlling the oxygen content of Czochralski process of silicon crystals by sandblasting silica vessel
JPS57118647A (en) * 1981-01-14 1982-07-23 Fujitsu Ltd Manufacture of semiconductor device
JPS60137892A (ja) * 1983-12-26 1985-07-22 Toshiba Ceramics Co Ltd 石英ガラスルツボ
JPS6212692A (ja) * 1985-07-10 1987-01-21 Fujitsu Ltd 単結晶半導体の成長方法
JPH085739B2 (ja) * 1986-12-26 1996-01-24 東芝セラミツクス株式会社 石英ガラスルツボの製造方法
DD265916A1 (de) * 1987-11-10 1989-03-15 Freiberg Spurenmetalle Veb Verfahren zur zuechtung von hochreinen siliciumeinkristallen

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020092040A (ko) * 2001-06-01 2002-12-11 송호봉 멤브레인 프레스장치

Also Published As

Publication number Publication date
DE3910449A1 (de) 1990-01-18
JPH0226031A (ja) 1990-01-29

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E902 Notification of reason for refusal
E601 Decision to refuse application