JPS547864A - Manufacture for semiconductor device - Google Patents
Manufacture for semiconductor deviceInfo
- Publication number
- JPS547864A JPS547864A JP7281677A JP7281677A JPS547864A JP S547864 A JPS547864 A JP S547864A JP 7281677 A JP7281677 A JP 7281677A JP 7281677 A JP7281677 A JP 7281677A JP S547864 A JPS547864 A JP S547864A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- manufacture
- molybdenum silicide
- atomosphere
- dispersion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Bipolar Transistors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE: To prevent initial evaporation of molybdenum silicide lower layer at high temperature atomosphere and to avoid the dispersion in threshold voltage, when semiconductor substrate is exposed, in semiconductor device using molybdenum silicide layer.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7281677A JPS547864A (en) | 1977-06-21 | 1977-06-21 | Manufacture for semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7281677A JPS547864A (en) | 1977-06-21 | 1977-06-21 | Manufacture for semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS547864A true JPS547864A (en) | 1979-01-20 |
Family
ID=13500309
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7281677A Pending JPS547864A (en) | 1977-06-21 | 1977-06-21 | Manufacture for semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS547864A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56161674A (en) * | 1980-05-16 | 1981-12-12 | Nec Corp | Metal oxide semiconductor device |
JPS57183049A (en) * | 1981-05-02 | 1982-11-11 | Matsushita Electronics Corp | Semiconductor device |
JPS6218069A (en) * | 1985-07-16 | 1987-01-27 | Toshiba Corp | Semiconductor device |
JPH04279036A (en) * | 1991-01-08 | 1992-10-05 | Nec Corp | Electric charge transfer element and manufacture thereof |
-
1977
- 1977-06-21 JP JP7281677A patent/JPS547864A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56161674A (en) * | 1980-05-16 | 1981-12-12 | Nec Corp | Metal oxide semiconductor device |
JPS57183049A (en) * | 1981-05-02 | 1982-11-11 | Matsushita Electronics Corp | Semiconductor device |
JPS6218069A (en) * | 1985-07-16 | 1987-01-27 | Toshiba Corp | Semiconductor device |
JPH04279036A (en) * | 1991-01-08 | 1992-10-05 | Nec Corp | Electric charge transfer element and manufacture thereof |
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