JPS547864A - Manufacture for semiconductor device - Google Patents

Manufacture for semiconductor device

Info

Publication number
JPS547864A
JPS547864A JP7281677A JP7281677A JPS547864A JP S547864 A JPS547864 A JP S547864A JP 7281677 A JP7281677 A JP 7281677A JP 7281677 A JP7281677 A JP 7281677A JP S547864 A JPS547864 A JP S547864A
Authority
JP
Japan
Prior art keywords
semiconductor device
manufacture
molybdenum silicide
atomosphere
dispersion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7281677A
Other languages
Japanese (ja)
Inventor
Nozomi Harada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP7281677A priority Critical patent/JPS547864A/en
Publication of JPS547864A publication Critical patent/JPS547864A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Bipolar Transistors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To prevent initial evaporation of molybdenum silicide lower layer at high temperature atomosphere and to avoid the dispersion in threshold voltage, when semiconductor substrate is exposed, in semiconductor device using molybdenum silicide layer.
COPYRIGHT: (C)1979,JPO&Japio
JP7281677A 1977-06-21 1977-06-21 Manufacture for semiconductor device Pending JPS547864A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7281677A JPS547864A (en) 1977-06-21 1977-06-21 Manufacture for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7281677A JPS547864A (en) 1977-06-21 1977-06-21 Manufacture for semiconductor device

Publications (1)

Publication Number Publication Date
JPS547864A true JPS547864A (en) 1979-01-20

Family

ID=13500309

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7281677A Pending JPS547864A (en) 1977-06-21 1977-06-21 Manufacture for semiconductor device

Country Status (1)

Country Link
JP (1) JPS547864A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56161674A (en) * 1980-05-16 1981-12-12 Nec Corp Metal oxide semiconductor device
JPS57183049A (en) * 1981-05-02 1982-11-11 Matsushita Electronics Corp Semiconductor device
JPS6218069A (en) * 1985-07-16 1987-01-27 Toshiba Corp Semiconductor device
JPH04279036A (en) * 1991-01-08 1992-10-05 Nec Corp Electric charge transfer element and manufacture thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56161674A (en) * 1980-05-16 1981-12-12 Nec Corp Metal oxide semiconductor device
JPS57183049A (en) * 1981-05-02 1982-11-11 Matsushita Electronics Corp Semiconductor device
JPS6218069A (en) * 1985-07-16 1987-01-27 Toshiba Corp Semiconductor device
JPH04279036A (en) * 1991-01-08 1992-10-05 Nec Corp Electric charge transfer element and manufacture thereof

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