JPS56161674A - Metal oxide semiconductor device - Google Patents

Metal oxide semiconductor device

Info

Publication number
JPS56161674A
JPS56161674A JP6474980A JP6474980A JPS56161674A JP S56161674 A JPS56161674 A JP S56161674A JP 6474980 A JP6474980 A JP 6474980A JP 6474980 A JP6474980 A JP 6474980A JP S56161674 A JPS56161674 A JP S56161674A
Authority
JP
Japan
Prior art keywords
layer
electrode wire
wiring
semiconductor device
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6474980A
Other languages
Japanese (ja)
Inventor
Yoshihiko Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP6474980A priority Critical patent/JPS56161674A/en
Publication of JPS56161674A publication Critical patent/JPS56161674A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To improve the reproducibility and the reliability of a metal oxide semiconductor device by employing a compound layer of insoluble metal such as Ta or the like and a semiconductor such as Si or the like for a gate metallic layer and a wiring layer for an MOS structure, thereby eliminating high temperature treatment in the step of forming an electrode wire. CONSTITUTION:This is applied for a capacitive electrode wire 24 and a gate electrode wire 27 which heretofore used two-layer polysilicon in a circuit or the like having one-transistor type memory cell. A compound or mixture of, for example, Ta and Si is coated, for example, by a method such as a sputtering method instead of the polysilicon layers. Interlayer insulating layers 25, 29 are used by anodizing (or thermally oxidizing at low temperature) the compound layer as TaO5 (or TaO5 containing SiO2) having high moisture resistance. Thus, the high temperature treatment of approx. 1,000 deg.C becomes unnecessary in the step of wiring the electrode, and an MOS circuit having low resistivity, and excellent interlayer insulation electrode wiring structure can be formed.
JP6474980A 1980-05-16 1980-05-16 Metal oxide semiconductor device Pending JPS56161674A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6474980A JPS56161674A (en) 1980-05-16 1980-05-16 Metal oxide semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6474980A JPS56161674A (en) 1980-05-16 1980-05-16 Metal oxide semiconductor device

Publications (1)

Publication Number Publication Date
JPS56161674A true JPS56161674A (en) 1981-12-12

Family

ID=13267114

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6474980A Pending JPS56161674A (en) 1980-05-16 1980-05-16 Metal oxide semiconductor device

Country Status (1)

Country Link
JP (1) JPS56161674A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61212040A (en) * 1985-03-18 1986-09-20 Hitachi Ltd Manufacture of semiconductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5236477A (en) * 1975-09-17 1977-03-19 Philips Nv Method of producing semiconductor device
JPS547864A (en) * 1977-06-21 1979-01-20 Toshiba Corp Manufacture for semiconductor device
JPS54133089A (en) * 1978-04-06 1979-10-16 Nec Corp Thin film capacitor and its manufacture

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5236477A (en) * 1975-09-17 1977-03-19 Philips Nv Method of producing semiconductor device
JPS547864A (en) * 1977-06-21 1979-01-20 Toshiba Corp Manufacture for semiconductor device
JPS54133089A (en) * 1978-04-06 1979-10-16 Nec Corp Thin film capacitor and its manufacture

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61212040A (en) * 1985-03-18 1986-09-20 Hitachi Ltd Manufacture of semiconductor device
JPH0789549B2 (en) * 1985-03-18 1995-09-27 株式会社日立製作所 Method for manufacturing semiconductor device

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