NL174499C - Amorf lichtgevoelig materiaal in de vorm van waterstofhoudend siliciumcarbide, alsmede drager voorzien van een of meer lagen van dit materiaal. - Google Patents

Amorf lichtgevoelig materiaal in de vorm van waterstofhoudend siliciumcarbide, alsmede drager voorzien van een of meer lagen van dit materiaal.

Info

Publication number
NL174499C
NL174499C NL7904965A NL7904965A NL174499C NL 174499 C NL174499 C NL 174499C NL 7904965 A NL7904965 A NL 7904965A NL 7904965 A NL7904965 A NL 7904965A NL 174499 C NL174499 C NL 174499C
Authority
NL
Netherlands
Prior art keywords
amorf
hydrogenic
layers
silicon carbide
light sensitive
Prior art date
Application number
NL7904965A
Other languages
English (en)
Other versions
NL174499B (nl
NL7904965A (nl
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of NL7904965A publication Critical patent/NL7904965A/nl
Publication of NL174499B publication Critical patent/NL174499B/nl
Application granted granted Critical
Publication of NL174499C publication Critical patent/NL174499C/nl

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08235—Silicon-based comprising three or four silicon-based layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/043—Photoconductive layers characterised by having two or more layers or characterised by their composite structure
    • G03G5/0433—Photoconductive layers characterised by having two or more layers or characterised by their composite structure all layers being inorganic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08235—Silicon-based comprising three or four silicon-based layers
    • G03G5/08242—Silicon-based comprising three or four silicon-based layers at least one with varying composition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/913—Material designed to be responsive to temperature, light, moisture
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
    • Y10T428/264—Up to 3 mils
    • Y10T428/265—1 mil or less
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Light Receiving Elements (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
  • Photovoltaic Devices (AREA)
  • Carbon And Carbon Compounds (AREA)
NL7904965A 1978-06-26 1979-06-26 Amorf lichtgevoelig materiaal in de vorm van waterstofhoudend siliciumcarbide, alsmede drager voorzien van een of meer lagen van dit materiaal. NL174499C (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7645778A JPS554040A (en) 1978-06-26 1978-06-26 Photoconductive material

Publications (3)

Publication Number Publication Date
NL7904965A NL7904965A (nl) 1979-12-28
NL174499B NL174499B (nl) 1984-01-16
NL174499C true NL174499C (nl) 1984-06-18

Family

ID=13605676

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7904965A NL174499C (nl) 1978-06-26 1979-06-26 Amorf lichtgevoelig materiaal in de vorm van waterstofhoudend siliciumcarbide, alsmede drager voorzien van een of meer lagen van dit materiaal.

Country Status (6)

Country Link
US (1) US4289822A (nl)
JP (1) JPS554040A (nl)
DE (1) DE2925796C2 (nl)
FR (1) FR2430097A1 (nl)
GB (1) GB2024186B (nl)
NL (1) NL174499C (nl)

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JPS57153160A (en) * 1981-03-16 1982-09-21 Sanyo Electric Co Ltd Solar beam energy transducer
JPH03188682A (ja) * 1981-04-30 1991-08-16 Kanegafuchi Chem Ind Co Ltd 高電圧アモルファス半導体／アモルファスシリコン・ヘテロ接合光起電力素子
US4402762A (en) * 1981-06-02 1983-09-06 John Puthenveetil K Method of making highly stable modified amorphous silicon and germanium films
US4536460A (en) * 1981-11-09 1985-08-20 Canon Kabushiki Kaisha Photoconductive member
JPS5882579A (ja) * 1981-11-11 1983-05-18 Kanegafuchi Chem Ind Co Ltd 高性能光起電力装置
US4423133A (en) * 1981-11-17 1983-12-27 Canon Kabushiki Kaisha Photoconductive member of amorphous silicon
US4460670A (en) * 1981-11-26 1984-07-17 Canon Kabushiki Kaisha Photoconductive member with α-Si and C, N or O and dopant
US4460669A (en) * 1981-11-26 1984-07-17 Canon Kabushiki Kaisha Photoconductive member with α-Si and C, U or D and dopant
JPS5895873A (ja) * 1981-12-02 1983-06-07 Konishiroku Photo Ind Co Ltd アモルフアスシリコン太陽電池
US4465750A (en) * 1981-12-22 1984-08-14 Canon Kabushiki Kaisha Photoconductive member with a -Si having two layer regions
US4483911A (en) * 1981-12-28 1984-11-20 Canon Kabushiki Kaisha Photoconductive member with amorphous silicon-carbon surface layer
WO1983002254A1 (en) * 1981-12-31 1983-07-07 Western Electric Co Optical recording media
DE3303266A1 (de) * 1982-02-01 1983-08-11 Canon K.K., Tokyo Fotoeleitfaehiges element
US4522905A (en) * 1982-02-04 1985-06-11 Canon Kk Amorphous silicon photoconductive member with interface and rectifying layers
US4452874A (en) * 1982-02-08 1984-06-05 Canon Kabushiki Kaisha Photoconductive member with multiple amorphous Si layers
US4452875A (en) * 1982-02-15 1984-06-05 Canon Kabushiki Kaisha Amorphous photoconductive member with α-Si interlayers
DE3246361A1 (de) * 1982-02-27 1983-09-08 Philips Patentverwaltung Gmbh, 2000 Hamburg Kohlenstoff enthaltende gleitschicht
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US4453173A (en) * 1982-04-27 1984-06-05 Rca Corporation Photocell utilizing a wide-bandgap semiconductor material
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Also Published As

Publication number Publication date
GB2024186B (en) 1982-09-08
FR2430097B1 (nl) 1982-02-12
FR2430097A1 (fr) 1980-01-25
DE2925796C2 (de) 1981-10-08
DE2925796A1 (de) 1980-01-03
JPS5549304B2 (nl) 1980-12-11
US4289822A (en) 1981-09-15
NL174499B (nl) 1984-01-16
GB2024186A (en) 1980-01-09
NL7904965A (nl) 1979-12-28
JPS554040A (en) 1980-01-12

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Effective date: 19970101