FR2430097A1 - Matiere photoconductrice - Google Patents

Matiere photoconductrice

Info

Publication number
FR2430097A1
FR2430097A1 FR7916393A FR7916393A FR2430097A1 FR 2430097 A1 FR2430097 A1 FR 2430097A1 FR 7916393 A FR7916393 A FR 7916393A FR 7916393 A FR7916393 A FR 7916393A FR 2430097 A1 FR2430097 A1 FR 2430097A1
Authority
FR
France
Prior art keywords
photoconductive material
light
angstroms
carbon
sensitive film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7916393A
Other languages
English (en)
Other versions
FR2430097B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of FR2430097A1 publication Critical patent/FR2430097A1/fr
Application granted granted Critical
Publication of FR2430097B1 publication Critical patent/FR2430097B1/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08235—Silicon-based comprising three or four silicon-based layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/043—Photoconductive layers characterised by having two or more layers or characterised by their composite structure
    • G03G5/0433—Photoconductive layers characterised by having two or more layers or characterised by their composite structure all layers being inorganic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08235—Silicon-based comprising three or four silicon-based layers
    • G03G5/08242—Silicon-based comprising three or four silicon-based layers at least one with varying composition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/913—Material designed to be responsive to temperature, light, moisture
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
    • Y10T428/264—Up to 3 mils
    • Y10T428/265—1 mil or less
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Light Receiving Elements (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
  • Photovoltaic Devices (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

Description d'un matériau photoconducteur comprenant une substance amorphe dont les éléments constitutifs indispensables sont le silicium, le carbone et l'hydrogène. Le matériau photoconducteur a une structure de formule (Si1-x Cx )1-y (H) y où 0,02 =< x =< 0,3 et 0,02 =< y =< 0,3. Jusqu'à 40 % de carbone peuvent être substitués par du germanium. Le maximum de sensibilité peut être établi pour une lumière de n'importe quelle longueur d'onde souhaitée entre 5 600 Angstrom et 4 500 Angstrom environ. Ce matériau photoconducteur est particulièrement utile quand il est appliqué à une pellicule sensible à la lumière qui fonctionne dans le mode à emmagasinage. La pellicule sensible à la lumière comprend le matériau photoconducteur dans une région où des paires d'électrons libres et de trous positifs sont produites dès incidence de la lumière.
FR7916393A 1978-06-26 1979-06-26 Matiere photoconductrice Granted FR2430097A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7645778A JPS554040A (en) 1978-06-26 1978-06-26 Photoconductive material

Publications (2)

Publication Number Publication Date
FR2430097A1 true FR2430097A1 (fr) 1980-01-25
FR2430097B1 FR2430097B1 (fr) 1982-02-12

Family

ID=13605676

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7916393A Granted FR2430097A1 (fr) 1978-06-26 1979-06-26 Matiere photoconductrice

Country Status (6)

Country Link
US (1) US4289822A (fr)
JP (1) JPS554040A (fr)
DE (1) DE2925796C2 (fr)
FR (1) FR2430097A1 (fr)
GB (1) GB2024186B (fr)
NL (1) NL174499C (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2490359A1 (fr) * 1980-09-12 1982-03-19 Canon Kk Element photoconducteur
EP0094224A1 (fr) * 1982-05-06 1983-11-16 Konica Corporation Photorécepteur

Families Citing this family (77)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4565731A (en) * 1978-05-04 1986-01-21 Canon Kabushiki Kaisha Image-forming member for electrophotography
US4471042A (en) * 1978-05-04 1984-09-11 Canon Kabushiki Kaisha Image-forming member for electrophotography comprising hydrogenated amorphous matrix of silicon and/or germanium
FR2433871A1 (fr) * 1978-08-18 1980-03-14 Hitachi Ltd Dispositif de formation d'image a semi-conducteur
JPS5662254A (en) * 1979-10-24 1981-05-28 Canon Inc Electrophotographic imaging material
JPS5662255A (en) * 1979-10-26 1981-05-28 Fuji Photo Film Co Ltd Electrophotographic receptor
DE3040972A1 (de) * 1979-10-30 1981-05-14 Fuji Photo Film Co. Ltd., Minami-Ashigara, Kanagawa Elektrophotographisches lichtempfindliches material und verfahren zu dessen herstellung
JPS5713777A (en) 1980-06-30 1982-01-23 Shunpei Yamazaki Semiconductor device and manufacture thereof
JPS56125881A (en) * 1980-03-06 1981-10-02 Fuji Photo Film Co Ltd Optical semiconductor element
US4405915A (en) * 1980-03-28 1983-09-20 Canon Kabushiki Kaisha Photoelectric transducing element
JPS56146142A (en) * 1980-04-16 1981-11-13 Hitachi Ltd Electrophotographic sensitive film
JPS56150752A (en) * 1980-04-25 1981-11-21 Hitachi Ltd Electrophotographic sensitive film
US4999270A (en) * 1980-06-25 1991-03-12 Semiconductor Energy Laboratory Co., Ltd. Printing member for electrostatic photocopying
US4889783A (en) * 1980-06-25 1989-12-26 Semiconductor Energy Laboratory Co., Ltd. Printing member for electrostatic photocopying
JPS5711351A (en) * 1980-06-25 1982-01-21 Shunpei Yamazaki Electrostatic copying machine
US5545503A (en) * 1980-06-25 1996-08-13 Semiconductor Energy Laboratory Co., Ltd. Method of making printing member for electrostatic photocopying
US5859443A (en) * 1980-06-30 1999-01-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6900463B1 (en) 1980-06-30 2005-05-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US5262350A (en) * 1980-06-30 1993-11-16 Semiconductor Energy Laboratory Co., Ltd. Forming a non single crystal semiconductor layer by using an electric current
JPS5727263A (en) * 1980-07-28 1982-02-13 Hitachi Ltd Electrophotographic photosensitive film
JPS5748735A (en) * 1980-09-08 1982-03-20 Canon Inc Manufacture of image forming member for electrophotography
DE3135375C2 (de) 1980-09-09 1995-02-23 Energy Conversion Devices Inc Verfahren zum Herstellen einer lichtempfindlichen amorphen Legierung
ES505269A0 (es) * 1980-09-09 1982-12-16 Energy Conversion Devices Inc Metodo para preparar una aleacion amorfa fotosensible mejo- rada
IN157308B (fr) * 1980-09-09 1986-03-01 Energy Conversion Devices Inc
JPS5752178A (en) * 1980-09-13 1982-03-27 Canon Inc Photoconductive member
US4394426A (en) * 1980-09-25 1983-07-19 Canon Kabushiki Kaisha Photoconductive member with α-Si(N) barrier layer
JPS57126175A (en) * 1981-01-29 1982-08-05 Kanegafuchi Chem Ind Co Ltd Amorphous silicon carbide/amorophous silicon hetero junction optoelectric element
US4385199A (en) * 1980-12-03 1983-05-24 Yoshihiro Hamakawa Photovoltaic cell having a hetero junction of amorphous silicon carbide and amorphous silicon
GB2095030B (en) * 1981-01-08 1985-06-12 Canon Kk Photoconductive member
US5258250A (en) * 1981-01-16 1993-11-02 Canon Kabushiki Kaisha Photoconductive member
US5582947A (en) * 1981-01-16 1996-12-10 Canon Kabushiki Kaisha Glow discharge process for making photoconductive member
US4539283A (en) * 1981-01-16 1985-09-03 Canon Kabushiki Kaisha Amorphous silicon photoconductive member
US4464451A (en) * 1981-02-06 1984-08-07 Canon Kabushiki Kaisha Electrophotographic image-forming member having aluminum oxide layer on a substrate
IE53485B1 (en) * 1981-02-12 1988-11-23 Energy Conversion Devices Inc Improved photoresponsive amorphous alloys
ZA82926B (en) * 1981-02-12 1983-01-26 Atlantic Richfield Co Improved photoresponsive amorphous alloys
JPS57153160A (en) * 1981-03-16 1982-09-21 Sanyo Electric Co Ltd Solar beam energy transducer
JPH03188682A (ja) * 1981-04-30 1991-08-16 Kanegafuchi Chem Ind Co Ltd 高電圧アモルファス半導体／アモルファスシリコン・ヘテロ接合光起電力素子
US4402762A (en) * 1981-06-02 1983-09-06 John Puthenveetil K Method of making highly stable modified amorphous silicon and germanium films
US4536460A (en) * 1981-11-09 1985-08-20 Canon Kabushiki Kaisha Photoconductive member
JPS5882579A (ja) * 1981-11-11 1983-05-18 Kanegafuchi Chem Ind Co Ltd 高性能光起電力装置
US4423133A (en) * 1981-11-17 1983-12-27 Canon Kabushiki Kaisha Photoconductive member of amorphous silicon
US4460669A (en) * 1981-11-26 1984-07-17 Canon Kabushiki Kaisha Photoconductive member with α-Si and C, U or D and dopant
US4460670A (en) * 1981-11-26 1984-07-17 Canon Kabushiki Kaisha Photoconductive member with α-Si and C, N or O and dopant
JPS5895873A (ja) * 1981-12-02 1983-06-07 Konishiroku Photo Ind Co Ltd アモルフアスシリコン太陽電池
US4465750A (en) * 1981-12-22 1984-08-14 Canon Kabushiki Kaisha Photoconductive member with a -Si having two layer regions
GB2115570B (en) * 1981-12-28 1985-07-10 Canon Kk Photoconductive member
EP0098296B1 (fr) * 1981-12-31 1987-04-08 Western Electric Company, Incorporated Support d'enregistrement optique
DE3303266A1 (de) * 1982-02-01 1983-08-11 Canon K.K., Tokyo Fotoeleitfaehiges element
US4522905A (en) * 1982-02-04 1985-06-11 Canon Kk Amorphous silicon photoconductive member with interface and rectifying layers
US4452874A (en) * 1982-02-08 1984-06-05 Canon Kabushiki Kaisha Photoconductive member with multiple amorphous Si layers
US4452875A (en) * 1982-02-15 1984-06-05 Canon Kabushiki Kaisha Amorphous photoconductive member with α-Si interlayers
USRE34035E (en) * 1982-02-27 1992-08-18 U.S. Philips Corp. Carbon containing layer
DE3246361A1 (de) * 1982-02-27 1983-09-08 Philips Patentverwaltung Gmbh, 2000 Hamburg Kohlenstoff enthaltende gleitschicht
US4453173A (en) * 1982-04-27 1984-06-05 Rca Corporation Photocell utilizing a wide-bandgap semiconductor material
JPS58192044A (ja) * 1982-05-06 1983-11-09 Konishiroku Photo Ind Co Ltd 感光体
JPS5955077A (ja) * 1982-09-22 1984-03-29 Sanyo Electric Co Ltd 光起電力装置
US4451391A (en) * 1982-09-24 1984-05-29 International Business Machines Corporation Conductive silicon carbide
EP0104846B1 (fr) * 1982-09-27 1987-03-25 Kabushiki Kaisha Toshiba Dispositif à couche mince électrolumineuse et procédé pour le fabriquer
US4704339A (en) * 1982-10-12 1987-11-03 The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland Infra-red transparent optical components
US4617246A (en) * 1982-11-04 1986-10-14 Canon Kabushiki Kaisha Photoconductive member of a Ge-Si layer and Si layer
US4585721A (en) * 1983-09-05 1986-04-29 Canon Kabushiki Kaisha Photoconductive member comprising amorphous germanium, amorphous silicon and nitrogen
US5300951A (en) * 1985-11-28 1994-04-05 Kabushiki Kaisha Toshiba Member coated with ceramic material and method of manufacturing the same
EP0249302B1 (fr) * 1986-01-23 1994-04-06 Canon Kabushiki Kaisha Elément photosensible pour utilisation électrophotographique
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FR2631346B1 (fr) * 1988-05-11 1994-05-20 Air Liquide Revetement protecteur multicouche pour substrat, procede de protection de substrat par depot par plasma d'un tel revetement, revetements obtenus et leurs applications
JPH03153876A (ja) * 1989-11-10 1991-07-01 Shin Etsu Chem Co Ltd 炭化珪素質部材
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JP2915555B2 (ja) * 1990-11-21 1999-07-05 日本碍子株式会社 複合部材の製造方法
US5238866A (en) * 1991-09-11 1993-08-24 GmbH & Co. Ingenieurburo Berlin Biotronik Mess- und Therapiegerate Plasma enhanced chemical vapor deposition process for producing an amorphous semiconductive surface coating
US5444558A (en) * 1991-11-22 1995-08-22 Victor Company Of Japan, Ltd. Spatial light modulator with photoconductor of hydrogenated amorphous silicon with 0.1-1.0 ppm boron
US5353139A (en) * 1991-11-22 1994-10-04 Victor Company Of Japan, Ltd. Spatial light modulator with photoconductor of hydrogenated amorphous silicon with 0.1-1.0 ppm boron
JPH0697070A (ja) * 1992-09-11 1994-04-08 Sanyo Electric Co Ltd 多結晶シリコン膜の製造方法
US6001486A (en) * 1994-07-29 1999-12-14 Donnelly Corporation Transparent substrate with diffuser surface
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2490359A1 (fr) * 1980-09-12 1982-03-19 Canon Kk Element photoconducteur
EP0094224A1 (fr) * 1982-05-06 1983-11-16 Konica Corporation Photorécepteur

Also Published As

Publication number Publication date
FR2430097B1 (fr) 1982-02-12
NL7904965A (nl) 1979-12-28
GB2024186A (en) 1980-01-09
JPS554040A (en) 1980-01-12
NL174499C (nl) 1984-06-18
JPS5549304B2 (fr) 1980-12-11
NL174499B (nl) 1984-01-16
DE2925796C2 (de) 1981-10-08
GB2024186B (en) 1982-09-08
DE2925796A1 (de) 1980-01-03
US4289822A (en) 1981-09-15

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