JPS6452129A - Thin film transistor - Google Patents
Thin film transistorInfo
- Publication number
- JPS6452129A JPS6452129A JP62208168A JP20816887A JPS6452129A JP S6452129 A JPS6452129 A JP S6452129A JP 62208168 A JP62208168 A JP 62208168A JP 20816887 A JP20816887 A JP 20816887A JP S6452129 A JPS6452129 A JP S6452129A
- Authority
- JP
- Japan
- Prior art keywords
- amorphous silicon
- light shielding
- silicon layer
- shielding layer
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title abstract 2
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 239000011733 molybdenum Substances 0.000 abstract 1
- 230000003071 parasitic effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
Abstract
PURPOSE:To decrease the leak current between drain and source by providing a light shielding layer in such a manner that the direct fall of the incident light from a gate side to an amorphous silicon layer is prevented. CONSTITUTION:The amorphous silicon layer 12 is provided on the gate electrode 13 made of a molybdenum-tuntalum alloy (MT) and a drain electrode 15 and a source electrode 16 made of aluminum, etc., are provided thereon. The light shielding layer 11 consisting of metal such as molybdenum, black org. material and dye is disposed on the side of the gate electrode 13 opposite to the amorphous silicon layer 12 side to prevent the direct fall of the incident light from the gate side to the amorphous silicon layer 12; in addition, the flat overlap of the light shielding layer 11 and the gate electrode 13 is confined to <=3mum to constitute a thin film transistor. Since the fall of the light to the amorphous silicon layer is prevented by providing the light shielding layer, the leak current between the drain and source is decreased and the increase in the parasitic capacity by provision of the light shielding layer is lessened.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62208168A JPS6452129A (en) | 1987-08-24 | 1987-08-24 | Thin film transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62208168A JPS6452129A (en) | 1987-08-24 | 1987-08-24 | Thin film transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6452129A true JPS6452129A (en) | 1989-02-28 |
Family
ID=16551782
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62208168A Pending JPS6452129A (en) | 1987-08-24 | 1987-08-24 | Thin film transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6452129A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100471771B1 (en) * | 1996-12-23 | 2005-07-07 | 삼성전자주식회사 | Data-open free thin film transistor liquid crystal display device using light shielding film |
| JP2006313906A (en) * | 2005-05-02 | 2006-11-16 | Samsung Electronics Co Ltd | Thin film transistor substrate, liquid crystal display including the same, and method for manufacturing the substrate |
| CN103489786A (en) * | 2013-09-18 | 2014-01-01 | 京东方科技集团股份有限公司 | Method for manufacturing array substrate |
| CN105529301A (en) * | 2016-01-04 | 2016-04-27 | 京东方科技集团股份有限公司 | Manufacturing method for array substrate, array substrate and display apparatus |
-
1987
- 1987-08-24 JP JP62208168A patent/JPS6452129A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100471771B1 (en) * | 1996-12-23 | 2005-07-07 | 삼성전자주식회사 | Data-open free thin film transistor liquid crystal display device using light shielding film |
| JP2006313906A (en) * | 2005-05-02 | 2006-11-16 | Samsung Electronics Co Ltd | Thin film transistor substrate, liquid crystal display including the same, and method for manufacturing the substrate |
| CN103489786A (en) * | 2013-09-18 | 2014-01-01 | 京东方科技集团股份有限公司 | Method for manufacturing array substrate |
| CN105529301A (en) * | 2016-01-04 | 2016-04-27 | 京东方科技集团股份有限公司 | Manufacturing method for array substrate, array substrate and display apparatus |
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