JPS5713763A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5713763A
JPS5713763A JP8786480A JP8786480A JPS5713763A JP S5713763 A JPS5713763 A JP S5713763A JP 8786480 A JP8786480 A JP 8786480A JP 8786480 A JP8786480 A JP 8786480A JP S5713763 A JPS5713763 A JP S5713763A
Authority
JP
Japan
Prior art keywords
ccd
layer
register
substrate
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8786480A
Other languages
Japanese (ja)
Inventor
Takashi Oba
Yoichi Sato
Fumiaki Fujii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Renesas Eastern Japan Semiconductor Inc
Original Assignee
Hitachi Tokyo Electronics Co Ltd
Hitachi Ltd
Hitachi Ome Electronic Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Tokyo Electronics Co Ltd, Hitachi Ltd, Hitachi Ome Electronic Co Ltd filed Critical Hitachi Tokyo Electronics Co Ltd
Priority to JP8786480A priority Critical patent/JPS5713763A/en
Publication of JPS5713763A publication Critical patent/JPS5713763A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76825—Structures for regeneration, refreshing, leakage compensation or the like

Abstract

PURPOSE:To improve the improper refresh of a semiconductor device by forming a carrier trap region along a charge transfer direction at the side of a CCD register and preventing the inflow of electrons occurred at the periphery. CONSTITUTION:A CCD registor 10 and a field 12 are formed on a p type Si substrate 1. An n<+> type diffused layer 17 is formed as a carrier trap region on the substrate between the peripheral field 12 and the outermost CCD register 16, and the potential of the layer 17 is held positive. When electrons e<-> generated at the peripheral field are handled in the potential well of the layer 17, an improper refresh can be prevented for the CCD memory. A dummy DDC register 34 may be formed instead of the region 17.
JP8786480A 1980-06-30 1980-06-30 Semiconductor device Pending JPS5713763A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8786480A JPS5713763A (en) 1980-06-30 1980-06-30 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8786480A JPS5713763A (en) 1980-06-30 1980-06-30 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5713763A true JPS5713763A (en) 1982-01-23

Family

ID=13926743

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8786480A Pending JPS5713763A (en) 1980-06-30 1980-06-30 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5713763A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5853861A (en) * 1981-09-04 1983-03-30 エルヌ・ベ−・フイリツプス・フル−イランペン・フアブリケン Charge coupled element
JPS59106149A (en) * 1982-11-30 1984-06-19 ア−ルシ−エ−　コ−ポレ−ション Ccd imager
JPH0258341A (en) * 1988-07-07 1990-02-27 Tektronix Inc Charge coupling device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5853861A (en) * 1981-09-04 1983-03-30 エルヌ・ベ−・フイリツプス・フル−イランペン・フアブリケン Charge coupled element
JPS59106149A (en) * 1982-11-30 1984-06-19 ア−ルシ−エ−　コ−ポレ−ション Ccd imager
JPH0416950B2 (en) * 1982-11-30 1992-03-25 Rca Corp
JPH0258341A (en) * 1988-07-07 1990-02-27 Tektronix Inc Charge coupling device
JP2521153B2 (en) * 1988-07-07 1996-07-31 テクトロニックス・インコーポレイテッド Charge coupled device

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