JPS5457871A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5457871A
JPS5457871A JP12347577A JP12347577A JPS5457871A JP S5457871 A JPS5457871 A JP S5457871A JP 12347577 A JP12347577 A JP 12347577A JP 12347577 A JP12347577 A JP 12347577A JP S5457871 A JPS5457871 A JP S5457871A
Authority
JP
Japan
Prior art keywords
type
region
same time
heat
oxidized film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12347577A
Other languages
Japanese (ja)
Other versions
JPS605228B2 (en
Inventor
Takeaki Okabe
Isao Yoshida
Shikayuki Ochi
Minoru Nagata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP52123475A priority Critical patent/JPS605228B2/en
Publication of JPS5457871A publication Critical patent/JPS5457871A/en
Publication of JPS605228B2 publication Critical patent/JPS605228B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To prevent the generation of a negative resistance due to a multiplication phenomenon is a high electrical field by inserting a P-type high-density layer into a MOS-type field effect transistor.
CONSTITUTION: Onto n-type resist substrate 1, n-type layer 2 containing impurity phosphorus is formed and impurity boron is diffused to form P region 3. At the same time, P-type high density region 10 is also formed. Then n-type region 4 is diffusion-formed through an ordinary planar process. Next some part of heat-oxidized film 8 is removed to form V-shaped groove 11 and heat-oxidized film 5 is formed sequentially, on which Al gate electrode 6 and a source electrode are formed at the same time
COPYRIGHT: (C)1979,JPO&Japio
JP52123475A 1977-10-17 1977-10-17 semiconductor equipment Expired JPS605228B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52123475A JPS605228B2 (en) 1977-10-17 1977-10-17 semiconductor equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52123475A JPS605228B2 (en) 1977-10-17 1977-10-17 semiconductor equipment

Publications (2)

Publication Number Publication Date
JPS5457871A true JPS5457871A (en) 1979-05-10
JPS605228B2 JPS605228B2 (en) 1985-02-08

Family

ID=14861539

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52123475A Expired JPS605228B2 (en) 1977-10-17 1977-10-17 semiconductor equipment

Country Status (1)

Country Link
JP (1) JPS605228B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5023196A (en) * 1990-01-29 1991-06-11 Motorola Inc. Method for forming a MOSFET with substrate source contact
US5191396A (en) * 1978-10-13 1993-03-02 International Rectifier Corp. High power mosfet with low on-resistance and high breakdown voltage
US5338961A (en) * 1978-10-13 1994-08-16 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US5869371A (en) * 1995-06-07 1999-02-09 Stmicroelectronics, Inc. Structure and process for reducing the on-resistance of mos-gated power devices
US6627950B1 (en) 1988-12-27 2003-09-30 Siliconix, Incorporated Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5191396A (en) * 1978-10-13 1993-03-02 International Rectifier Corp. High power mosfet with low on-resistance and high breakdown voltage
US5338961A (en) * 1978-10-13 1994-08-16 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US5598018A (en) * 1978-10-13 1997-01-28 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US5742087A (en) * 1978-10-13 1998-04-21 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US6627950B1 (en) 1988-12-27 2003-09-30 Siliconix, Incorporated Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry
US5023196A (en) * 1990-01-29 1991-06-11 Motorola Inc. Method for forming a MOSFET with substrate source contact
US5869371A (en) * 1995-06-07 1999-02-09 Stmicroelectronics, Inc. Structure and process for reducing the on-resistance of mos-gated power devices
US6046473A (en) * 1995-06-07 2000-04-04 Stmicroelectronics, Inc. Structure and process for reducing the on-resistance of MOS-gated power devices

Also Published As

Publication number Publication date
JPS605228B2 (en) 1985-02-08

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